JP2007142138A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007142138A
JP2007142138A JP2005333656A JP2005333656A JP2007142138A JP 2007142138 A JP2007142138 A JP 2007142138A JP 2005333656 A JP2005333656 A JP 2005333656A JP 2005333656 A JP2005333656 A JP 2005333656A JP 2007142138 A JP2007142138 A JP 2007142138A
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Japan
Prior art keywords
semiconductor device
electrode
gate wiring
metal film
film
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Pending
Application number
JP2005333656A
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English (en)
Japanese (ja)
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JP2007142138A5 (enrdf_load_stackoverflow
Inventor
Atsushi Narasaki
敦司 楢崎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005333656A priority Critical patent/JP2007142138A/ja
Priority to US11/427,608 priority patent/US20070114577A1/en
Priority to DE102006041575A priority patent/DE102006041575A1/de
Priority to KR1020060087828A priority patent/KR100778356B1/ko
Publication of JP2007142138A publication Critical patent/JP2007142138A/ja
Publication of JP2007142138A5 publication Critical patent/JP2007142138A5/ja
Pending legal-status Critical Current

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JP2011086852A (ja) * 2009-10-19 2011-04-28 Toyota Motor Corp 半導体装置
JP2011096699A (ja) * 2009-10-27 2011-05-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011249491A (ja) * 2010-05-26 2011-12-08 Mitsubishi Electric Corp 電力用半導体装置
DE102011082781A1 (de) 2010-09-29 2012-03-29 Mitsubishi Electric Corp. Halbleitervorrichtung
DE102011083243A1 (de) 2010-10-27 2012-05-03 Mitsubishi Electric Corp. Halbleitervorrichtung
JP2014107489A (ja) * 2012-11-29 2014-06-09 Toyota Motor Corp 半導体装置
JP2015109334A (ja) * 2013-12-04 2015-06-11 株式会社デンソー 半導体装置
JP2017069569A (ja) * 2016-11-16 2017-04-06 三菱電機株式会社 半導体装置
JP2018098283A (ja) * 2016-12-09 2018-06-21 富士電機株式会社 半導体装置
JP2018133445A (ja) * 2017-02-15 2018-08-23 トヨタ自動車株式会社 半導体装置とその製造方法
JP2020077756A (ja) * 2018-11-07 2020-05-21 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2020155464A (ja) * 2019-03-18 2020-09-24 富士電機株式会社 半導体組立体および劣化検出方法
JP2021002683A (ja) * 2020-10-02 2021-01-07 ローム株式会社 半導体装置および半導体モジュール
JP2021007182A (ja) * 2020-10-19 2021-01-21 三菱電機株式会社 半導体装置及びその製造方法
JP2021036622A (ja) * 2020-12-03 2021-03-04 富士電機株式会社 半導体装置
US11063004B2 (en) 2016-11-29 2021-07-13 Mitsubishi Electric Corporation Semiconductor device, control device, and method for manufacturing semiconductor device
US11257812B2 (en) 2015-02-13 2022-02-22 Rohm Co., Ltd. Semiconductor device and semiconductor module
JP2022130747A (ja) * 2021-03-18 2022-09-06 ローム株式会社 半導体装置
JP2022130702A (ja) * 2020-12-03 2022-09-06 富士電機株式会社 半導体装置
JP2022178755A (ja) * 2021-05-21 2022-12-02 富士電機株式会社 半導体モジュール
JPWO2023062781A1 (enrdf_load_stackoverflow) * 2021-10-14 2023-04-20
JP2023073444A (ja) * 2021-12-23 2023-05-25 ローム株式会社 半導体装置
JP2023087383A (ja) * 2021-12-13 2023-06-23 三菱電機株式会社 半導体装置
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JP2011086852A (ja) * 2009-10-19 2011-04-28 Toyota Motor Corp 半導体装置
JP2011096699A (ja) * 2009-10-27 2011-05-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
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DE102011082781B4 (de) * 2010-09-29 2016-07-07 Mitsubishi Electric Corp. Halbleitervorrichtung mit einer plattenelektrode zum verbinden einer mehrzahl an halbleiterchips
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DE102011083243A1 (de) 2010-10-27 2012-05-03 Mitsubishi Electric Corp. Halbleitervorrichtung
JP2012094669A (ja) * 2010-10-27 2012-05-17 Mitsubishi Electric Corp 半導体装置
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US11862672B2 (en) 2012-03-12 2024-01-02 Rohm Co., Ltd. Semiconductor device, and method for manufacturing semiconductor device
US12278262B2 (en) 2012-03-12 2025-04-15 Rohm Co., Ltd. Semiconductor device, and method for manufacturing semiconductor device
JP2014107489A (ja) * 2012-11-29 2014-06-09 Toyota Motor Corp 半導体装置
JP2015109334A (ja) * 2013-12-04 2015-06-11 株式会社デンソー 半導体装置
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US11670633B2 (en) 2015-02-13 2023-06-06 Rohm Co., Ltd. Semiconductor device and semiconductor module
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JP2023087383A (ja) * 2021-12-13 2023-06-23 三菱電機株式会社 半導体装置
JP7707885B2 (ja) 2021-12-13 2025-07-15 三菱電機株式会社 半導体装置
JP7461534B2 (ja) 2021-12-23 2024-04-03 ローム株式会社 半導体装置
JP2023073444A (ja) * 2021-12-23 2023-05-25 ローム株式会社 半導体装置

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