JP2006253634A5 - - Google Patents

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Publication number
JP2006253634A5
JP2006253634A5 JP2005278843A JP2005278843A JP2006253634A5 JP 2006253634 A5 JP2006253634 A5 JP 2006253634A5 JP 2005278843 A JP2005278843 A JP 2005278843A JP 2005278843 A JP2005278843 A JP 2005278843A JP 2006253634 A5 JP2006253634 A5 JP 2006253634A5
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JP
Japan
Prior art keywords
insulating film
dielectric constant
low dielectric
forming
mixed gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2005278843A
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English (en)
Japanese (ja)
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JP4860219B2 (ja
JP2006253634A (ja
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Priority claimed from JP2005278843A external-priority patent/JP4860219B2/ja
Priority to JP2005278843A priority Critical patent/JP4860219B2/ja
Priority to KR1020060013738A priority patent/KR100830736B1/ko
Priority to TW095104740A priority patent/TWI456691B/zh
Priority to EP06002925A priority patent/EP1691408A3/en
Priority to CNB2006100074778A priority patent/CN100517602C/zh
Priority to US11/353,132 priority patent/US7682517B2/en
Publication of JP2006253634A publication Critical patent/JP2006253634A/ja
Publication of JP2006253634A5 publication Critical patent/JP2006253634A5/ja
Publication of JP4860219B2 publication Critical patent/JP4860219B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005278843A 2005-02-14 2005-09-26 基板の処理方法、電子デバイスの製造方法及びプログラム Expired - Lifetime JP4860219B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005278843A JP4860219B2 (ja) 2005-02-14 2005-09-26 基板の処理方法、電子デバイスの製造方法及びプログラム
KR1020060013738A KR100830736B1 (ko) 2005-02-14 2006-02-13 기판 처리 방법, 전자 디바이스 제조 방법 및 프로그램을기록한 기록 매체
TW095104740A TWI456691B (zh) 2005-02-14 2006-02-13 基板之處理方法，電子裝置之製造方法及程式
CNB2006100074778A CN100517602C (zh) 2005-02-14 2006-02-14 基板的处理方法、电子器件的制造方法和程序
EP06002925A EP1691408A3 (en) 2005-02-14 2006-02-14 Method of and program for manufacturing an electronic device
US11/353,132 US7682517B2 (en) 2005-02-14 2006-02-14 Method of processing substrate, and method of and program for manufacturing electronic device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005036716 2005-02-14
JP2005036716 2005-02-14
JP2005278843A JP4860219B2 (ja) 2005-02-14 2005-09-26 基板の処理方法、電子デバイスの製造方法及びプログラム

Publications (3)

Publication Number Publication Date
JP2006253634A JP2006253634A (ja) 2006-09-21
JP2006253634A5 true JP2006253634A5 (enExample) 2008-11-06
JP4860219B2 JP4860219B2 (ja) 2012-01-25

Family

ID=36480956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005278843A Expired - Lifetime JP4860219B2 (ja) 2005-02-14 2005-09-26 基板の処理方法、電子デバイスの製造方法及びプログラム

Country Status (6)

Country Link
US (1) US7682517B2 (enExample)
EP (1) EP1691408A3 (enExample)
JP (1) JP4860219B2 (enExample)
KR (1) KR100830736B1 (enExample)
CN (1) CN100517602C (enExample)
TW (1) TWI456691B (enExample)

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US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
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