JP2006054251A5 - - Google Patents

Download PDF

Info

Publication number
JP2006054251A5
JP2006054251A5 JP2004233405A JP2004233405A JP2006054251A5 JP 2006054251 A5 JP2006054251 A5 JP 2006054251A5 JP 2004233405 A JP2004233405 A JP 2004233405A JP 2004233405 A JP2004233405 A JP 2004233405A JP 2006054251 A5 JP2006054251 A5 JP 2006054251A5
Authority
JP
Japan
Prior art keywords
interlayer insulating
forming
insulating film
film
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004233405A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006054251A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004233405A priority Critical patent/JP2006054251A/ja
Priority claimed from JP2004233405A external-priority patent/JP2006054251A/ja
Priority to TW094126554A priority patent/TW200618093A/zh
Priority to US11/199,241 priority patent/US20060051969A1/en
Publication of JP2006054251A publication Critical patent/JP2006054251A/ja
Priority to US11/501,109 priority patent/US20070054482A1/en
Publication of JP2006054251A5 publication Critical patent/JP2006054251A5/ja
Priority to US12/509,597 priority patent/US20090286391A1/en
Pending legal-status Critical Current

Links

JP2004233405A 2004-08-10 2004-08-10 半導体装置の製造方法 Pending JP2006054251A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004233405A JP2006054251A (ja) 2004-08-10 2004-08-10 半導体装置の製造方法
TW094126554A TW200618093A (en) 2004-08-10 2005-08-04 Method for manufacturing semiconductor device
US11/199,241 US20060051969A1 (en) 2004-08-10 2005-08-09 Semiconductor device fabrication method
US11/501,109 US20070054482A1 (en) 2004-08-10 2006-08-09 Semiconductor device fabrication method
US12/509,597 US20090286391A1 (en) 2004-08-10 2009-07-27 Semiconductor device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004233405A JP2006054251A (ja) 2004-08-10 2004-08-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006054251A JP2006054251A (ja) 2006-02-23
JP2006054251A5 true JP2006054251A5 (enExample) 2006-12-21

Family

ID=35996822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004233405A Pending JP2006054251A (ja) 2004-08-10 2004-08-10 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US20060051969A1 (enExample)
JP (1) JP2006054251A (enExample)
TW (1) TW200618093A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734090B2 (ja) * 2005-10-31 2011-07-27 株式会社東芝 半導体装置の製造方法
KR20100079221A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 반도체 소자의 구리 배선 형성 방법
US8222160B2 (en) * 2010-11-30 2012-07-17 Kabushiki Kaisha Toshiba Metal containing sacrifice material and method of damascene wiring formation
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US9679807B1 (en) * 2015-11-20 2017-06-13 Globalfoundries Inc. Method, apparatus, and system for MOL interconnects without titanium liner
KR20190104902A (ko) * 2018-03-02 2019-09-11 마이크로머티어리얼즈 엘엘씨 금속 산화물들을 제거하기 위한 방법들
JP7015754B2 (ja) * 2018-08-30 2022-02-03 ルネサスエレクトロニクス株式会社 半導体装置
CN112864086A (zh) * 2019-11-28 2021-05-28 长鑫存储技术有限公司 导电互连结构及其制备方法
CN113314457B (zh) * 2020-02-27 2023-04-18 长鑫存储技术有限公司 半导体结构的形成方法及半导体结构
CN113380693A (zh) * 2020-03-10 2021-09-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
KR100221656B1 (ko) * 1996-10-23 1999-09-15 구본준 배선 형성 방법
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
TW503522B (en) * 2001-09-04 2002-09-21 Nanya Plastics Corp Method for preventing short circuit between metal conduction wires
US6812156B2 (en) * 2002-07-02 2004-11-02 Taiwan Semiconductor Manufacturing Co., Ltd Method to reduce residual particulate contamination in CVD and PVD semiconductor wafer manufacturing

Similar Documents

Publication Publication Date Title
TW200802713A (en) Manufacturing method of semiconductor device
JP2009164481A5 (enExample)
JP2010258215A5 (ja) 半導体装置
JP2007019187A5 (enExample)
JP2015502039A5 (enExample)
JP2009065024A5 (enExample)
JP2008177606A5 (enExample)
JP2013080813A5 (enExample)
TW200520219A (en) Manufacturing method for semiconductor device and semiconductor device
JP2006054251A5 (enExample)
TW200501216A (en) Organic semiconductor device and method of manufacture of same
JP2006524436A5 (enExample)
JP2010258213A5 (ja) 半導体装置
JP2011071304A5 (enExample)
JP2006013136A5 (enExample)
TW200515478A (en) Method for fabricating semiconductor device with fine patterns
JP2006128673A5 (enExample)
JP2011060901A5 (enExample)
TWI265615B (en) Method for forming landing plug contact in semiconductor device
TW200610032A (en) Method for plasma treating an etched opening or a damascening opening formed in a porous low-k material, and semiconductor device
TW200618093A (en) Method for manufacturing semiconductor device
JP2001308178A5 (enExample)
TWI462224B (zh) 積體電路以及用於處理具有埋入特徵之積體電路的方法
JP2005159326A5 (enExample)
CN102810470A (zh) 降低微负载效应的方法