JP2001308178A5 - - Google Patents
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- Publication number
- JP2001308178A5 JP2001308178A5 JP2000123839A JP2000123839A JP2001308178A5 JP 2001308178 A5 JP2001308178 A5 JP 2001308178A5 JP 2000123839 A JP2000123839 A JP 2000123839A JP 2000123839 A JP2000123839 A JP 2000123839A JP 2001308178 A5 JP2001308178 A5 JP 2001308178A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- hard mask
- film
- pattern
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims description 99
- 238000004519 manufacturing process Methods 0.000 claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 51
- 239000010410 layer Substances 0.000 claims description 43
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- 239000012790 adhesive layer Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims 20
- 239000002184 metal Substances 0.000 claims 18
- 229910052751 metal Inorganic materials 0.000 claims 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 16
- 229910052802 copper Inorganic materials 0.000 claims 16
- 239000010949 copper Substances 0.000 claims 16
- 125000000524 functional group Chemical group 0.000 claims 16
- 230000004888 barrier function Effects 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 150000002736 metal compounds Chemical class 0.000 claims 2
- 238000004347 surface barrier Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000123839A JP4057762B2 (ja) | 2000-04-25 | 2000-04-25 | 半導体装置の製造方法 |
| TW090108015A TW508784B (en) | 2000-04-25 | 2001-04-03 | Method of manufacturing a semiconductor device and a semiconductor device |
| US09/823,975 US6495466B2 (en) | 2000-04-25 | 2001-04-03 | Method of manufacturing a semiconductor device and a semiconductor device |
| KR1020010021109A KR100783868B1 (ko) | 2000-04-25 | 2001-04-19 | 반도체장치의 제조방법 및 반도체장치 |
| US10/298,585 US6734104B2 (en) | 2000-04-25 | 2002-11-19 | Method of manufacturing a semiconductor device and a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000123839A JP4057762B2 (ja) | 2000-04-25 | 2000-04-25 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001308178A JP2001308178A (ja) | 2001-11-02 |
| JP2001308178A5 true JP2001308178A5 (enExample) | 2006-03-30 |
| JP4057762B2 JP4057762B2 (ja) | 2008-03-05 |
Family
ID=18634066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000123839A Expired - Fee Related JP4057762B2 (ja) | 2000-04-25 | 2000-04-25 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6495466B2 (enExample) |
| JP (1) | JP4057762B2 (enExample) |
| KR (1) | KR100783868B1 (enExample) |
| TW (1) | TW508784B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010030169A1 (en) * | 2000-04-13 | 2001-10-18 | Hideo Kitagawa | Method of etching organic film and method of producing element |
| US6800918B2 (en) * | 2001-04-18 | 2004-10-05 | Intel Corporation | EMI and noise shielding for multi-metal layer high frequency integrated circuit processes |
| JP2003142579A (ja) * | 2001-11-07 | 2003-05-16 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
| US6949411B1 (en) * | 2001-12-27 | 2005-09-27 | Lam Research Corporation | Method for post-etch and strip residue removal on coral films |
| US20030215570A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
| US20050062164A1 (en) * | 2003-09-23 | 2005-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improving time dependent dielectric breakdown lifetimes |
| US7444867B2 (en) * | 2005-01-04 | 2008-11-04 | Bell Geospace, Inc. | Accelerometer and rate sensor package for gravity gradiometer instruments |
| KR101674989B1 (ko) | 2013-05-21 | 2016-11-22 | 제일모직 주식회사 | 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
| CN103996618B (zh) * | 2014-05-09 | 2017-01-18 | 上海大学 | Tft电极引线制造方法 |
| CN103996653B (zh) * | 2014-05-09 | 2017-01-04 | 上海大学 | Tft深接触孔制造方法 |
| US12454752B2 (en) * | 2022-01-14 | 2025-10-28 | Asm Ip Holding B.V. | Method and apparatus for forming a patterned structure on a substrate |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09139423A (ja) | 1995-11-13 | 1997-05-27 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP3660799B2 (ja) | 1997-09-08 | 2005-06-15 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP3300643B2 (ja) | 1997-09-09 | 2002-07-08 | 株式会社東芝 | 半導体装置の製造方法 |
| US6066569A (en) * | 1997-09-30 | 2000-05-23 | Siemens Aktiengesellschaft | Dual damascene process for metal layers and organic intermetal layers |
| TW337608B (en) * | 1997-10-29 | 1998-08-01 | United Microelectronics Corp | Process for producing unlanded via |
| DE19756988C1 (de) * | 1997-12-20 | 1999-09-02 | Daimler Benz Ag | Elektrisch beheizbare Glühkerze oder Glühstab für Verbrennungsmotoren |
| JP3107047B2 (ja) * | 1998-05-28 | 2000-11-06 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3186040B2 (ja) * | 1998-06-01 | 2001-07-11 | 日本電気株式会社 | 半導体装置の製造方法 |
| KR20000019171A (ko) * | 1998-09-09 | 2000-04-06 | 윤종용 | 감광성 폴리머를 사용하는 금속배선 형성방법 |
| US6184142B1 (en) * | 1999-04-26 | 2001-02-06 | United Microelectronics Corp. | Process for low k organic dielectric film etch |
| US6165891A (en) * | 1999-11-22 | 2000-12-26 | Chartered Semiconductor Manufacturing Ltd. | Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer |
| US6261963B1 (en) * | 2000-07-07 | 2001-07-17 | Advanced Micro Devices, Inc. | Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devices |
-
2000
- 2000-04-25 JP JP2000123839A patent/JP4057762B2/ja not_active Expired - Fee Related
-
2001
- 2001-04-03 TW TW090108015A patent/TW508784B/zh not_active IP Right Cessation
- 2001-04-03 US US09/823,975 patent/US6495466B2/en not_active Expired - Lifetime
- 2001-04-19 KR KR1020010021109A patent/KR100783868B1/ko not_active Expired - Fee Related
-
2002
- 2002-11-19 US US10/298,585 patent/US6734104B2/en not_active Expired - Lifetime
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