JP2000012686A5 - - Google Patents
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- Publication number
- JP2000012686A5 JP2000012686A5 JP1998173751A JP17375198A JP2000012686A5 JP 2000012686 A5 JP2000012686 A5 JP 2000012686A5 JP 1998173751 A JP1998173751 A JP 1998173751A JP 17375198 A JP17375198 A JP 17375198A JP 2000012686 A5 JP2000012686 A5 JP 2000012686A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- interlayer insulating
- plug
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011229 interlayer Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 230000004888 barrier function Effects 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000005498 polishing Methods 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 230000009977 dual effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10173751A JP2000012686A (ja) | 1998-06-22 | 1998-06-22 | 半導体集積回路装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10173751A JP2000012686A (ja) | 1998-06-22 | 1998-06-22 | 半導体集積回路装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000012686A JP2000012686A (ja) | 2000-01-14 |
| JP2000012686A5 true JP2000012686A5 (enExample) | 2004-09-02 |
Family
ID=15966466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10173751A Pending JP2000012686A (ja) | 1998-06-22 | 1998-06-22 | 半導体集積回路装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000012686A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6340638B1 (en) * | 2000-03-31 | 2002-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for forming a passivation layer on copper conductive elements |
| JP4390367B2 (ja) | 2000-06-07 | 2009-12-24 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR100538379B1 (ko) * | 2003-11-11 | 2005-12-21 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성 방법 |
| JP4504403B2 (ja) * | 2007-08-29 | 2010-07-14 | 株式会社東芝 | 半導体記憶装置 |
| TWI683365B (zh) | 2015-02-06 | 2020-01-21 | 日商半導體能源研究所股份有限公司 | 裝置及其製造方法以及電子裝置 |
| KR102582523B1 (ko) * | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
-
1998
- 1998-06-22 JP JP10173751A patent/JP2000012686A/ja active Pending
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