JP2000012686A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JP2000012686A
JP2000012686A JP10173751A JP17375198A JP2000012686A JP 2000012686 A JP2000012686 A JP 2000012686A JP 10173751 A JP10173751 A JP 10173751A JP 17375198 A JP17375198 A JP 17375198A JP 2000012686 A JP2000012686 A JP 2000012686A
Authority
JP
Japan
Prior art keywords
film
insulating film
interlayer insulating
wiring
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10173751A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000012686A5 (enExample
Inventor
Junji Noguchi
純司 野口
Tatsuyuki Saito
達之 齋藤
Hide Yamaguchi
日出 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10173751A priority Critical patent/JP2000012686A/ja
Publication of JP2000012686A publication Critical patent/JP2000012686A/ja
Publication of JP2000012686A5 publication Critical patent/JP2000012686A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP10173751A 1998-06-22 1998-06-22 半導体集積回路装置およびその製造方法 Pending JP2000012686A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10173751A JP2000012686A (ja) 1998-06-22 1998-06-22 半導体集積回路装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10173751A JP2000012686A (ja) 1998-06-22 1998-06-22 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000012686A true JP2000012686A (ja) 2000-01-14
JP2000012686A5 JP2000012686A5 (enExample) 2004-09-02

Family

ID=15966466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10173751A Pending JP2000012686A (ja) 1998-06-22 1998-06-22 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2000012686A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340638B1 (en) * 2000-03-31 2002-01-22 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a passivation layer on copper conductive elements
US6632738B2 (en) 2000-06-07 2003-10-14 Nec Electronics Corporation Method of manufacturing semiconductor device
CN1316593C (zh) * 2003-11-11 2007-05-16 海力士半导体有限公司 在半导体器件中形成金属线的方法
JP2009054941A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 半導体装置及び半導体記憶装置
WO2016125044A1 (en) * 2015-02-06 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
US9653479B2 (en) 2015-03-19 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340638B1 (en) * 2000-03-31 2002-01-22 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a passivation layer on copper conductive elements
US6632738B2 (en) 2000-06-07 2003-10-14 Nec Electronics Corporation Method of manufacturing semiconductor device
CN1316593C (zh) * 2003-11-11 2007-05-16 海力士半导体有限公司 在半导体器件中形成金属线的方法
JP2009054941A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 半導体装置及び半導体記憶装置
US10074672B2 (en) 2015-02-06 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
JP2016174144A (ja) * 2015-02-06 2016-09-29 株式会社半導体エネルギー研究所 装置およびその作製方法、ならびに電子機器
US9728559B2 (en) 2015-02-06 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
WO2016125044A1 (en) * 2015-02-06 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
US10707239B2 (en) 2015-02-06 2020-07-07 Semiconductor Energy Laboratory Co., Ltd. Device, manufacturing method thereof, and electronic device
US9653479B2 (en) 2015-03-19 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10050060B2 (en) 2015-03-19 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2021036594A (ja) * 2015-03-19 2021-03-04 株式会社半導体エネルギー研究所 半導体装置
JP7045436B2 (ja) 2015-03-19 2022-03-31 株式会社半導体エネルギー研究所 半導体装置
JP2022081649A (ja) * 2015-03-19 2022-05-31 株式会社半導体エネルギー研究所 半導体装置

Similar Documents

Publication Publication Date Title
KR19990045323A (ko) 저유전율막을 가지는 반도체 장치 및 그 제조 방법
JPH1092925A (ja) 半導体構成要素および製造方法
KR100571417B1 (ko) 반도체 소자의 듀얼 다마신 배선 및 그 제조 방법
JPH10284600A (ja) 半導体装置及びその製造方法
JP2000012686A (ja) 半導体集積回路装置およびその製造方法
JP2002373937A (ja) 半導体装置及びその製造方法
US6660650B1 (en) Selective aluminum plug formation and etchback process
JP3415081B2 (ja) 半導体装置及び半導体装置の製造方法
KR100268809B1 (ko) 반도체소자의비아콘택형성방법
JPH11186274A (ja) デュアル・ダマスク技術
JP4472286B2 (ja) 変形されたデュアルダマシン工程を利用した半導体素子の金属配線形成方法
KR100954685B1 (ko) 반도체 소자의 금속배선 형성 방법
JPH08181146A (ja) 半導体装置の製造方法
KR100574645B1 (ko) 텅스텐 플러그 형성 방법
KR100383084B1 (ko) 반도체 소자의 플러그 형성 방법
KR100393968B1 (ko) 반도체 소자의 이중 다마신 형성방법
KR101175225B1 (ko) 반도체 소자의 패턴 형성방법 및 이를 이용한 금속배선형성방법
KR100395907B1 (ko) 반도체소자의 배선 형성방법
JP2000068274A (ja) 配線構造、及びその形成方法
KR100393966B1 (ko) 반도체 소자의 이중 다마신 형성방법
KR100450241B1 (ko) 플러그 형성 방법 및 이 플러그를 갖는 반도체 소자
KR100835421B1 (ko) 반도체 소자의 금속 배선 형성 방법
KR100259168B1 (ko) 반도체 디바이스의 금속배선 구조 및 그의 형성방법
KR100772719B1 (ko) 듀얼다마신공정을 이용한 금속배선 형성 방법
JP2002176098A (ja) 多層配線構造を有する半導体装置の製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040727

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040927

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050621