JP2005525691A - 電気浸透マイクロチャネル冷却システム - Google Patents

電気浸透マイクロチャネル冷却システム Download PDF

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Publication number
JP2005525691A
JP2005525691A JP2003532907A JP2003532907A JP2005525691A JP 2005525691 A JP2005525691 A JP 2005525691A JP 2003532907 A JP2003532907 A JP 2003532907A JP 2003532907 A JP2003532907 A JP 2003532907A JP 2005525691 A JP2005525691 A JP 2005525691A
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Japan
Prior art keywords
fluid
heat
substrate
microchannel
flow
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JP2003532907A
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English (en)
Japanese (ja)
Inventor
ケニス イー． グッドソン，
デービット イー． ハバー，
リナン ジャン，
トーマス ダブリュー． ケニー，
ジャエ−モ クー，
ジェームス シー． ミッケルセン，
ジュアン ジー． サンティアゴ，
イブリン ニン−イ ワン，
シューリン ゼン，
リェン ジャン，
チュァン−ファ チェン，
ダニエル ジェイ． ラザー，
Original Assignee
ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ
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Publication of JP2005525691A publication Critical patent/JP2005525691A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B19/00—Machines or pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B1/00 - F04B17/00
    • F04B19/006—Micropumps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2260/00—Heat exchangers or heat exchange elements having special size, e.g. microstructures
    • F28F2260/02—Heat exchangers or heat exchange elements having special size, e.g. microstructures having microchannels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Of Non-Positive Displacement Pumps (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Micromachines (AREA)
JP2003532907A 2001-09-28 2002-09-16 電気浸透マイクロチャネル冷却システム Ceased JP2005525691A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32615101P 2001-09-28 2001-09-28
US10/053,859 US6942018B2 (en) 2001-09-28 2002-01-19 Electroosmotic microchannel cooling system
PCT/US2002/029405 WO2003029731A2 (en) 2001-09-28 2002-09-16 Electroosmotic microchannel cooling system

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007229590A Division JP2008072109A (ja) 2001-09-28 2007-09-04 電気浸透マイクロチャネル冷却システム
JP2007229591A Division JP2008042214A (ja) 2001-09-28 2007-09-04 電気浸透マイクロチャネル冷却システム

Publications (1)

Publication Number Publication Date
JP2005525691A true JP2005525691A (ja) 2005-08-25

Family

ID=26732318

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2003532907A Ceased JP2005525691A (ja) 2001-09-28 2002-09-16 電気浸透マイクロチャネル冷却システム
JP2007229591A Pending JP2008042214A (ja) 2001-09-28 2007-09-04 電気浸透マイクロチャネル冷却システム
JP2007229590A Pending JP2008072109A (ja) 2001-09-28 2007-09-04 電気浸透マイクロチャネル冷却システム
JP2011040775A Withdrawn JP2011101067A (ja) 2001-09-28 2011-02-25 電気浸透マイクロチャネル冷却システム

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2007229591A Pending JP2008042214A (ja) 2001-09-28 2007-09-04 電気浸透マイクロチャネル冷却システム
JP2007229590A Pending JP2008072109A (ja) 2001-09-28 2007-09-04 電気浸透マイクロチャネル冷却システム
JP2011040775A Withdrawn JP2011101067A (ja) 2001-09-28 2011-02-25 電気浸透マイクロチャネル冷却システム

Country Status (8)

Country Link
US (5) US6942018B2 (enExample)
EP (2) EP1576320A4 (enExample)
JP (4) JP2005525691A (enExample)
KR (1) KR20040048907A (enExample)
CN (1) CN1306230C (enExample)
AU (1) AU2002326931A1 (enExample)
TW (1) TW560238B (enExample)
WO (1) WO2003029731A2 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004276224A (ja) * 2003-03-17 2004-10-07 Toyo Technol Inc 繊維を充填した電気浸透ポンプ
JP2006029689A (ja) * 2004-07-16 2006-02-02 Daikin Ind Ltd マイクロ分流器
JP2007508716A (ja) * 2003-10-16 2007-04-05 インテル コーポレイション 集積回路スタックを冷却するためにポーラスなフリットを用いる電気浸透ポンプ
JP2007103821A (ja) * 2005-10-07 2007-04-19 Seiko Epson Corp 冷却装置、プロジェクタ及び冷却方法
WO2007052377A1 (ja) * 2005-11-02 2007-05-10 Niigata Tlo Corporation マイクロポンプ及びマイクロ流体チップ
JP2009515306A (ja) * 2005-11-08 2009-04-09 ビーワイディー カンパニー リミテッド バッテリパック用の熱放散装置及びそれを使用したバッテリパック
JP2012015509A (ja) * 2010-06-29 2012-01-19 General Electric Co <Ge> Ｃ形マニホルド及びミリチャンネル冷却を有するヒートシンク
JP2012504501A (ja) * 2008-09-30 2012-02-23 フォースト・フィジックス・リミテッド・ライアビリティ・カンパニー 流体温度およびフローの制御のための方法および装置
KR20120030184A (ko) * 2010-09-17 2012-03-28 대우조선해양 주식회사 평형수를 이용한 냉각 시스템
JP2013536441A (ja) * 2010-08-23 2013-09-19 ライフ テクノロジーズ コーポレーション 化学的検出システムの温度制御法
JP2018522222A (ja) * 2015-05-28 2018-08-09 リンデ アクチエンゲゼルシャフトＬｉｎｄｅ Ａｋｔｉｅｎｇｅｓｅｌｌｓｃｈａｆｔ 熱交換装置の状態を特定する方法
JP2019176468A (ja) * 2018-03-26 2019-10-10 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 改善された周波数安定度を有する、蒸気セル原子周波数基準のための装置及び方法
JP2020092263A (ja) * 2018-11-22 2020-06-11 株式会社Ｓｏｋｅｎ 電子部品冷却装置
WO2020218008A1 (ja) * 2019-04-26 2020-10-29 株式会社デンソー 冷却システム

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US6917637B2 (en) * 2001-10-12 2005-07-12 Fuji Photo Film Co., Ltd. Cooling device for laser diodes
US6575971B2 (en) * 2001-11-15 2003-06-10 Quantum Cor, Inc. Cardiac valve leaflet stapler device and methods thereof
US6606251B1 (en) 2002-02-07 2003-08-12 Cooligy Inc. Power conditioning module
CN1653297B (zh) * 2002-05-08 2010-09-29 佛森技术公司 高效固态光源及其使用和制造方法
US6988534B2 (en) * 2002-11-01 2006-01-24 Cooligy, Inc. Method and apparatus for flexible fluid delivery for cooling desired hot spots in a heat producing device
US7000691B1 (en) * 2002-07-11 2006-02-21 Raytheon Company Method and apparatus for cooling with coolant at a subambient pressure
US7235164B2 (en) 2002-10-18 2007-06-26 Eksigent Technologies, Llc Electrokinetic pump having capacitive electrodes
US7014835B2 (en) 2002-08-15 2006-03-21 Velocys, Inc. Multi-stream microchannel device
US6881039B2 (en) * 2002-09-23 2005-04-19 Cooligy, Inc. Micro-fabricated electrokinetic pump
AU2003270882A1 (en) 2002-09-23 2004-05-04 Cooligy, Inc. Micro-fabricated electrokinetic pump with on-frit electrode
US7511443B2 (en) * 2002-09-26 2009-03-31 Barrett Technology, Inc. Ultra-compact, high-performance motor controller and method of using same
DE10246540B4 (de) * 2002-09-30 2012-03-15 Rehm Thermal Systems Gmbh Vorrichtung zur Reinigung von Prozessgas einer Reflowlötanlage
US6888721B1 (en) * 2002-10-18 2005-05-03 Atec Corporation Electrohydrodynamic (EHD) thin film evaporator with splayed electrodes
US6994151B2 (en) 2002-10-22 2006-02-07 Cooligy, Inc. Vapor escape microchannel heat exchanger
US7222058B2 (en) * 2002-10-28 2007-05-22 Fisher-Rosemount Systems, Inc. Method of modeling and sizing a heat exchanger
US6988535B2 (en) * 2002-11-01 2006-01-24 Cooligy, Inc. Channeled flat plate fin heat exchange system, device and method
US20040112571A1 (en) * 2002-11-01 2004-06-17 Cooligy, Inc. Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device
WO2004042306A2 (en) 2002-11-01 2004-05-21 Cooligy, Inc. Method and apparatus for achieving temperature uniformity and hot spot cooling in a heat producing device
US6986382B2 (en) 2002-11-01 2006-01-17 Cooligy Inc. Interwoven manifolds for pressure drop reduction in microchannel heat exchangers
US20050211418A1 (en) * 2002-11-01 2005-09-29 Cooligy, Inc. Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device
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