JP4694514B2 - 半導体素子の冷却構造 - Google Patents
半導体素子の冷却構造 Download PDFInfo
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- JP4694514B2 JP4694514B2 JP2007028773A JP2007028773A JP4694514B2 JP 4694514 B2 JP4694514 B2 JP 4694514B2 JP 2007028773 A JP2007028773 A JP 2007028773A JP 2007028773 A JP2007028773 A JP 2007028773A JP 4694514 B2 JP4694514 B2 JP 4694514B2
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- 239000004065 semiconductor Substances 0.000 title claims description 83
- 238000001816 cooling Methods 0.000 title claims description 41
- 238000005338 heat storage Methods 0.000 claims description 68
- 239000011232 storage material Substances 0.000 claims description 34
- 239000012071 phase Substances 0.000 description 32
- 230000020169 heat generation Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
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- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
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- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/404—Connecting portions
- H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
- H01L2224/40491—Connecting portions connected to auxiliary connecting means on the bonding areas being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
- H01L2224/84815—Reflow soldering
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
図4に示す変形例では、蓄熱部材3のケース31の表面にディンプル33が形成されている。半導体素子1が発熱した際、蓄熱部材3と半導体素子1との線膨張係数の差により、蓄熱部材3に応力が生じる場合がある。また、潜熱蓄熱材32が相変化する際、その体積が変化することにより蓄熱部材3に応力が生じる場合がある。これに対し、上記のようにディンプル33が設けられることにより、蓄熱部材3に生じた応力が緩和される。
Claims (4)
- 半導体素子と、
前記半導体素子が搭載されるヒートシンクと、
前記半導体素子に対して前記ヒートシンクの反対側に位置するように前記半導体素子に取付けられた潜熱蓄熱材を含む蓄熱部材と、
前記ヒートシンクまたは前記ヒートシンク上に形成されたバスバーと前記蓄熱部材とを接続する、空気よりも熱伝導率の高い伝熱部材とを備えた、半導体素子の冷却構造。 - 前記蓄熱部材は、導電性の外殻体と、該外殻体内に貯留された潜熱蓄熱材とを含み、
前記外殻体を介して前記半導体素子と他の部品とが電気的に接続される、請求項1に記載の半導体素子の冷却構造。 - 前記半導体素子に固定された前記蓄熱部材に生じる応力を緩和することが可能な応力吸収部が蓄熱部材に形成される、請求項1または請求項2に記載の半導体素子の冷却構造。
- 前記半導体素子は、車両を駆動する回転電機を制御する制御装置に含まれる、請求項1から請求項3のいずれかに記載の半導体素子の冷却構造。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007028773A JP4694514B2 (ja) | 2007-02-08 | 2007-02-08 | 半導体素子の冷却構造 |
DE112008000371T DE112008000371B8 (de) | 2007-02-08 | 2008-02-04 | Halbleiterelement-Struktur mit Latentwärmespeichermaterial |
US12/526,361 US8919424B2 (en) | 2007-02-08 | 2008-02-04 | Semiconductor element cooling structure |
CN2008800038764A CN101632172B (zh) | 2007-02-08 | 2008-02-04 | 半导体元件的冷却构造 |
PCT/JP2008/052094 WO2008096839A1 (ja) | 2007-02-08 | 2008-02-04 | 半導体素子の冷却構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007028773A JP4694514B2 (ja) | 2007-02-08 | 2007-02-08 | 半導体素子の冷却構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008193017A JP2008193017A (ja) | 2008-08-21 |
JP4694514B2 true JP4694514B2 (ja) | 2011-06-08 |
Family
ID=39681740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007028773A Expired - Fee Related JP4694514B2 (ja) | 2007-02-08 | 2007-02-08 | 半導体素子の冷却構造 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8919424B2 (ja) |
JP (1) | JP4694514B2 (ja) |
CN (1) | CN101632172B (ja) |
DE (1) | DE112008000371B8 (ja) |
WO (1) | WO2008096839A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008004053A1 (de) * | 2008-01-11 | 2009-07-23 | Airbus Deutschland Gmbh | Spitzenlast-Kühlung von elektronischen Bauteilen durch phasenwechselnde Materialien |
JP5320354B2 (ja) * | 2010-07-28 | 2013-10-23 | 株式会社神戸製鋼所 | 放熱装置 |
US9210832B2 (en) * | 2012-08-13 | 2015-12-08 | Asustek Computer Inc. | Thermal buffering element |
CN103596407B (zh) * | 2012-08-13 | 2016-08-10 | 华硕电脑股份有限公司 | 热缓冲元件 |
US9117748B2 (en) | 2013-01-31 | 2015-08-25 | Infineon Technologies Ag | Semiconductor device including a phase change material |
US9793255B2 (en) | 2013-01-31 | 2017-10-17 | Infineon Technologies Ag | Power semiconductor device including a cooling material |
JP6179145B2 (ja) * | 2013-03-18 | 2017-08-16 | 富士通株式会社 | 電子機器システム |
FR3011067B1 (fr) * | 2013-09-23 | 2016-06-24 | Commissariat Energie Atomique | Appareil comportant un composant fonctionnel susceptible d'etre en surcharge thermique lors de son fonctionnement et un systeme de refroidissement du composant |
JP6217357B2 (ja) * | 2013-12-02 | 2017-10-25 | 株式会社デンソー | 機電一体型駆動装置 |
CN104780736B (zh) * | 2014-01-13 | 2018-05-25 | 潘晨曦 | 电机控制器 |
DE102014213545A1 (de) * | 2014-07-11 | 2015-04-23 | Siemens Aktiengesellschaft | Leistungshalbleitermodul |
JP6686813B2 (ja) * | 2016-09-15 | 2020-04-22 | トヨタ自動車株式会社 | 半導体装置 |
CN107144163B (zh) * | 2017-04-18 | 2018-12-07 | 西安交通大学 | 一种带有冷却系统的熔融盐蓄热罐 |
DE102017122053A1 (de) | 2017-09-22 | 2019-03-28 | Infineon Technologies Ag | Magnetisches Phasenwechselmaterial zur Wärmeabfuhr |
JP6670868B2 (ja) * | 2018-02-16 | 2020-03-25 | 矢崎エナジーシステム株式会社 | 潜熱蓄熱体 |
JP7098574B2 (ja) * | 2019-05-28 | 2022-07-11 | 矢崎総業株式会社 | 放熱構造 |
JP2021086845A (ja) * | 2019-11-25 | 2021-06-03 | 矢崎総業株式会社 | 電子装置 |
FR3112241B1 (fr) * | 2020-07-02 | 2022-08-12 | Safran | Dispositif de refroidissement mis en œuvre dans une application d’électronique de puissance |
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- 2008-02-04 US US12/526,361 patent/US8919424B2/en active Active
- 2008-02-04 DE DE112008000371T patent/DE112008000371B8/de not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
CN101632172A (zh) | 2010-01-20 |
US20100319876A1 (en) | 2010-12-23 |
DE112008000371B8 (de) | 2013-02-28 |
DE112008000371B4 (de) | 2012-12-06 |
CN101632172B (zh) | 2011-06-01 |
WO2008096839A1 (ja) | 2008-08-14 |
US8919424B2 (en) | 2014-12-30 |
JP2008193017A (ja) | 2008-08-21 |
DE112008000371T5 (de) | 2009-12-17 |
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