JP2005327762A - 絶縁ゲート型半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 127
- 210000000746 body region Anatomy 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 42
- 230000007423 decrease Effects 0.000 description 18
- 230000005684 electric field Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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Abstract
【解決手段】絶縁ゲート型半導体装置100は,電流が流れるセルエリアと,そのセルエリアを囲む終端エリアとによって構成されている。そして,半導体装置100には,セルエリアに複数のゲートトレンチ21が,終端エリアに複数の終端トレンチ62がそれぞれ設けられている。さらに,ゲートトレンチ21はストライプ形状に,終端トレンチ62は同心円状にそれぞれ形成されている。また,半導体装置100では,ゲートトレンチ21の端部と終端トレンチ62の壁面との間隔が一定となるように配置されている。すなわち,終端トレンチ62の角部の曲率に合わせてゲートトレンチ21の長さを変更している。
【選択図】 図3
Description
第1の形態に係る絶縁ゲート型半導体装置100(以下,「半導体装置100」とする)は,図1の平面透視図および図2の断面図に示す構造を有している。なお,本明細書においては,出発基板と,出発基板上にエピタキシャル成長により形成した単結晶シリコンの部分とを合わせた全体を半導体基板と呼ぶこととする。
第2の形態の半導体装置200では,図8に示すようにはしご状に配置されたゲートトレンチ21が設けられている。また,ゲートトレンチ21は,図8中の縦方向に並行配置されたゲートトレンチ211と,図8中の横方向にゲートトレンチ211と交差しないように配置されたゲートトレンチ212とを有している。すなわち,ゲートトレンチ21は,トレンチの繋ぎ目を設けることなくはしご状に配置されている。勿論,ゲートトレンチ211およびゲートトレンチ212ともにゲート電極が内蔵されている。
12 N- ドリフト領域
21 ゲートトレンチ
22 ゲート電極
23 堆積絶縁層
24 ゲート絶縁膜
31 N+ ソース領域
41 P- ボディ領域
51 Pフローティング領域
53 Pフローティング領域
62 終端トレンチ
68 耐圧保持トレンチ
100 絶縁ゲート型半導体装置
Claims (7)
- 半導体基板内の上面側に位置し第1導電型半導体であるボディ領域と,前記ボディ領域の下方に接し第2導電型半導体であるドリフト領域とを有する絶縁ゲート型半導体装置において,
前記ボディ領域を貫通するとともに上面から見てストライプ状に形成され,ゲート電極を内蔵する第1トレンチ部群と,
上面から見て円弧状に形成された部位を有する第2トレンチ部と,
前記ドリフト領域に囲まれるとともに前記第1トレンチ部群のうちの少なくとも1つのトレンチ部の底部を包含し,第1導電型半導体である第1フローティング領域と,
前記ドリフト領域に囲まれるとともに前記第2トレンチ部の底部を包含し,第1導電型半導体である第2フローティング領域と,
前記第1トレンチ部群は,上面から見て各トレンチ部の端部が前記第2トレンチ部の壁面と対向し,各トレンチ部の端部と前記第2トレンチ部の壁面との間隔が一定であることを特徴とする絶縁ゲート型半導体装置。 - 請求項1に記載する絶縁ゲート型半導体装置において,
前記第1トレンチ部群のうち,全部もしくは一部のトレンチ部の端部は,前記第2トレンチ部のうちの円弧状に形成された部位の壁面と対向していることを特徴とする絶縁ゲート型半導体装置。 - 請求項1または請求項2に記載する絶縁ゲート型半導体装置において,
前記第2トレンチ部は,上面から見て環状構造を有しており,
前記第1トレンチ部群は,前記第2トレンチ部にて区画された環状領域内に配置されていることを特徴とする絶縁ゲート型半導体装置。 - 半導体基板内の上面側に位置し第1導電型半導体であるボディ領域と,前記ボディ領域の下方に接し第2導電型半導体であるドリフト領域とを有する絶縁ゲート型半導体装置において,
前記ボディ領域を貫通するとともに上面から見てストライプ状に形成され,ゲート電極を内蔵する第1トレンチ部群と,
前記第1トレンチ部群のうちの隣り合うトレンチ部間に位置し,前記第1トレンチ部群の各トレンチ部と非接合である第2トレンチ部と,
前記ドリフト領域に囲まれるとともに前記第1トレンチ部群のうちの少なくとも1つのトレンチ部の底部を包含し,第1導電型半導体である第1フローティング領域と,
前記ドリフト領域に囲まれるとともに前記第2トレンチ部の底部を包含し,第1導電型半導体である第2フローティング領域とを有することを特徴とする絶縁ゲート型半導体装置。 - 請求項4に記載する絶縁ゲート型半導体装置において,
上面から見て円弧状に形成された部位を有する第3トレンチ部と,
前記ドリフト領域に囲まれるとともに前記第3トレンチ部の底部を包含し,第1導電型半導体である第3フローティング領域とを有し,
前記第1トレンチ部群は,上面から見て各トレンチ部の端部が前記第3トレンチ部の壁面と対向し,各トレンチ部の端部と前記第3トレンチ部の壁面との間隔が一定であることを特徴とする絶縁ゲート型半導体装置。 - 請求項5に記載する絶縁ゲート型半導体装置において,
前記第1トレンチ部群のうち,全部もしくは一部のトレンチ部の端部は,前記第3トレンチ部のうちの円弧状に形成された部位の壁面と対向していることを特徴とする絶縁ゲート型半導体装置。 - 請求項5または請求項6に記載する絶縁ゲート型半導体装置において,
前記第3トレンチ部は,上面から見て環状構造を有しており,
前記第1トレンチ部群および前記第2トレンチ部は,前記第3トレンチ部にて区画された環状領域内に配置されていることを特徴とする絶縁ゲート型半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004141825A JP4721653B2 (ja) | 2004-05-12 | 2004-05-12 | 絶縁ゲート型半導体装置 |
US11/578,949 US7586151B2 (en) | 2004-05-12 | 2005-05-11 | Insulated gate semiconductor device |
EP05740925A EP1745517B1 (en) | 2004-05-12 | 2005-05-11 | Insulated gate semiconductor device |
PCT/JP2005/009022 WO2005109514A2 (en) | 2004-05-12 | 2005-05-11 | Insulated gate semiconductor device |
CNB2005800150455A CN100487916C (zh) | 2004-05-12 | 2005-05-11 | 绝缘栅半导体器件 |
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JP2004141825A JP4721653B2 (ja) | 2004-05-12 | 2004-05-12 | 絶縁ゲート型半導体装置 |
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JP2005327762A true JP2005327762A (ja) | 2005-11-24 |
JP4721653B2 JP4721653B2 (ja) | 2011-07-13 |
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JP2004141825A Expired - Fee Related JP4721653B2 (ja) | 2004-05-12 | 2004-05-12 | 絶縁ゲート型半導体装置 |
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US (1) | US7586151B2 (ja) |
EP (1) | EP1745517B1 (ja) |
JP (1) | JP4721653B2 (ja) |
CN (1) | CN100487916C (ja) |
WO (1) | WO2005109514A2 (ja) |
Cited By (9)
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JP2007173411A (ja) * | 2005-12-20 | 2007-07-05 | Toyota Motor Corp | 絶縁ゲート型半導体装置 |
JP2008066473A (ja) * | 2006-09-06 | 2008-03-21 | Toyota Motor Corp | 半導体装置 |
JP2008172006A (ja) * | 2007-01-11 | 2008-07-24 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008270681A (ja) * | 2007-04-25 | 2008-11-06 | Fuji Electric Device Technology Co Ltd | 炭化珪素半導体装置 |
US7999312B2 (en) * | 2006-03-08 | 2011-08-16 | Toyota Jidosha Kabushiki Kaisha | Insulated gate-type semiconductor device having a low concentration diffusion region |
JP2015095567A (ja) * | 2013-11-12 | 2015-05-18 | トヨタ自動車株式会社 | 半導体装置 |
JP2017022185A (ja) * | 2015-07-07 | 2017-01-26 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
JP2020161838A (ja) * | 2013-10-03 | 2020-10-01 | 日本テキサス・インスツルメンツ合同会社 | トレンチゲートトレンチフィールドプレート半垂直半横方向mosfet |
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JP5315638B2 (ja) * | 2007-07-24 | 2013-10-16 | サンケン電気株式会社 | 半導体装置 |
US8421148B2 (en) * | 2007-09-14 | 2013-04-16 | Cree, Inc. | Grid-UMOSFET with electric field shielding of gate oxide |
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Also Published As
Publication number | Publication date |
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CN1950948A (zh) | 2007-04-18 |
US7586151B2 (en) | 2009-09-08 |
WO2005109514A2 (en) | 2005-11-17 |
US20070241394A1 (en) | 2007-10-18 |
JP4721653B2 (ja) | 2011-07-13 |
CN100487916C (zh) | 2009-05-13 |
EP1745517B1 (en) | 2011-05-11 |
WO2005109514A3 (en) | 2006-06-29 |
EP1745517A2 (en) | 2007-01-24 |
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