JP2007173411A - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
- Publication number
- JP2007173411A JP2007173411A JP2005367140A JP2005367140A JP2007173411A JP 2007173411 A JP2007173411 A JP 2007173411A JP 2005367140 A JP2005367140 A JP 2005367140A JP 2005367140 A JP2005367140 A JP 2005367140A JP 2007173411 A JP2007173411 A JP 2007173411A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- semiconductor device
- gate
- region
- termination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 210000000746 body region Anatomy 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 abstract description 29
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】半導体装置100は,ゲートトレンチ21および終端トレンチ62の底部の周囲にフローティング領域を有するフローティング構造の半導体装置であって,ストライプ状に形成されたゲートトレンチ21を環状に形成された終端トレンチ62が包囲するレイアウトになっている。さらに,終端トレンチ62は,内アール部を有するレイアウトとなっている。さらに,終端トレンチ62のうち,最内に位置するトレンチの内アール部Rの径rをゲートトレンチ21のピッチpよりも小さくする。そして,内アール部Rと対向するゲートトレンチ21の長さを調節する。
【選択図】図1
Description
寸法d=(トレンチピッチp−トレンチ幅w)/2 (1)
寸法d=(トレンチピッチp−トレンチ幅w)/2 (I)
本形態の半導体装置100では,ゲートトレンチ21のトレンチピッチpが2.5μm,トレンチ幅wが0.3μmであるため,寸法dは1.1μmとなる。
12 N- ドリフト領域(ドリフト領域)
21 ゲートトレンチ(第1トレンチ部群のトレンチ部)
22 ゲート電極
23 堆積絶縁層
24 ゲート絶縁膜
31 N+ ソース領域
41 P- ボディ領域(ボディ領域)
51 Pフローティング領域(第1フローティング領域)
53 Pフローティング領域(第2フローティング領域)
62 終端トレンチ(第2トレンチ部群のトレンチ部)
62a トレンチ(トレンチa)
62b トレンチ(トレンチb)
62R 内アール部(内アール部R)
100 半導体装置(絶縁ゲート型半導体装置)
Claims (3)
- 半導体基板内の上面側に位置し第1導電型半導体であるボディ領域と,前記ボディ領域の下方に接し第2導電型半導体であるドリフト領域とを有する絶縁ゲート型半導体装置において,
前記ボディ領域を貫通するとともに上面から見てストライプ状に形成され,ゲート電極を内蔵する複数のトレンチ部からなる第1トレンチ部群と,
前記ドリフト領域に囲まれるとともに前記第1トレンチ部群のうちの少なくとも1つのトレンチ部の底部を包含し,第1導電型半導体である第1フローティング領域と,
上面から見て前記第1トレンチ部群を包囲するとともに環状をなす複数のトレンチ部によってなる第2トレンチ部群と,
前記ドリフト領域に囲まれるとともに前記第2トレンチ部群のうちの少なくとも1つのトレンチ部の底部を包囲し,第1導電型半導体である第2フローティング領域とを有し,
前記第2トレンチ部の各トレンチ部には,環の内側に窪んだ形状をなす内アール部が設けられ,そのうち最内に位置するトレンチ部の内アール部を内アール部Rとして,その内アール部Rの径は前記第1トレンチ部群のトレンチ部のピッチよりも小さいことを特徴とする絶縁ゲート型半導体装置。 - 請求項1に記載する絶縁ゲート型半導体装置において,
前記第2トレンチ部群のトレンチ部は,前記第1トレンチ部群のトレンチ部の長手方向に対し,直交する方向の第1方向と,平行する方向の第2方向との2方向によって構成され,
前記内アール部Rと繋がる部位のうち,第1方向に形成された部分をトレンチa,第2方向に形成された部分をトレンチbとして,前記第1トレンチ部群のトレンチ部のうち,前記内アール部Rと対向するトレンチ部の第1方向上の位置と,トレンチbの第1方向上の位置とが一致していることを特徴とする絶縁ゲート型半導体装置。 - 請求項1または請求項2に記載する絶縁ゲート型半導体装置において,
前記第1トレンチ部群のトレンチ部のうち,前記内アール部Rと対向するトレンチ部の端部と,前記内アール部Rとの間の最長距離を寸法dとし,前記第1トレンチ部群の各トレンチ部のピッチをトレンチピッチpとし,前記第1トレンチ部群のトレンチ部の開口部の幅をトレンチ幅wとし,次の式(1)を満たすことを特徴とする絶縁ゲート型半導体装置。
寸法d=(トレンチピッチp−トレンチ幅w)/2 (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005367140A JP4735237B2 (ja) | 2005-12-20 | 2005-12-20 | 絶縁ゲート型半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005367140A JP4735237B2 (ja) | 2005-12-20 | 2005-12-20 | 絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007173411A true JP2007173411A (ja) | 2007-07-05 |
JP4735237B2 JP4735237B2 (ja) | 2011-07-27 |
Family
ID=38299584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005367140A Expired - Fee Related JP4735237B2 (ja) | 2005-12-20 | 2005-12-20 | 絶縁ゲート型半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4735237B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009004655A (ja) * | 2007-06-22 | 2009-01-08 | Toyota Motor Corp | 半導体装置 |
JP2010062361A (ja) * | 2008-09-04 | 2010-03-18 | Toyota Motor Corp | 半導体装置 |
JP2011086746A (ja) * | 2009-10-15 | 2011-04-28 | Toyota Motor Corp | 半導体装置 |
US9698221B2 (en) | 2014-05-01 | 2017-07-04 | Mitsubishi Electric Corporation | Semiconductor device |
US11264495B2 (en) | 2018-03-15 | 2022-03-01 | Fuji Electric Co., Ltd. | Semiconductor device using regions between pads |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203964A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2005327762A (ja) * | 2004-05-12 | 2005-11-24 | Toyota Motor Corp | 絶縁ゲート型半導体装置 |
-
2005
- 2005-12-20 JP JP2005367140A patent/JP4735237B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203964A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2005327762A (ja) * | 2004-05-12 | 2005-11-24 | Toyota Motor Corp | 絶縁ゲート型半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009004655A (ja) * | 2007-06-22 | 2009-01-08 | Toyota Motor Corp | 半導体装置 |
JP2010062361A (ja) * | 2008-09-04 | 2010-03-18 | Toyota Motor Corp | 半導体装置 |
JP2011086746A (ja) * | 2009-10-15 | 2011-04-28 | Toyota Motor Corp | 半導体装置 |
US9698221B2 (en) | 2014-05-01 | 2017-07-04 | Mitsubishi Electric Corporation | Semiconductor device |
US11264495B2 (en) | 2018-03-15 | 2022-03-01 | Fuji Electric Co., Ltd. | Semiconductor device using regions between pads |
US11817495B2 (en) | 2018-03-15 | 2023-11-14 | Fuji Electric Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP4735237B2 (ja) | 2011-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4453671B2 (ja) | 絶縁ゲート型半導体装置およびその製造方法 | |
JP6320545B2 (ja) | 半導体装置 | |
JP6299581B2 (ja) | 半導体装置 | |
JP4721653B2 (ja) | 絶縁ゲート型半導体装置 | |
JP7471267B2 (ja) | 半導体装置 | |
JP7059555B2 (ja) | 半導体装置 | |
US9972713B2 (en) | Semiconductor device and method of manufacturing same | |
US7973363B2 (en) | IGBT semiconductor device | |
JP6139355B2 (ja) | 半導体装置 | |
US10256229B2 (en) | Semiconductor device and manufacturing method | |
US9929265B1 (en) | Semiconductor device | |
JP2010040973A (ja) | 半導体装置およびその製造方法 | |
JP2007173418A (ja) | 半導体装置 | |
JP2008135522A (ja) | 半導体装置 | |
JP4498796B2 (ja) | 絶縁ゲート型半導体装置およびその製造方法 | |
JP2018060984A (ja) | 半導体装置 | |
USRE48259E1 (en) | Semiconductor device | |
JP4735237B2 (ja) | 絶縁ゲート型半導体装置 | |
US10141397B2 (en) | Semiconductor device and method of manufacturing the same | |
US20230395710A1 (en) | Semiconductor device and manufacturing method of semiconductor device | |
JP2006093457A (ja) | 絶縁ゲート型半導体装置 | |
JP2020123607A (ja) | 半導体装置 | |
US12100763B2 (en) | Semiconductor device having cell section with gate structures partly covered with protective film | |
US20240021670A1 (en) | Power semiconductor device with an insulated trench gate electrode | |
US20220013666A1 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080320 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101005 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110329 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110411 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4735237 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140513 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |