JP6301882B2 - 半導体装置の製造方法と半導体装置 - Google Patents
半導体装置の製造方法と半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000011810 insulating material Substances 0.000 claims description 125
- 239000000758 substrate Substances 0.000 claims description 62
- 238000005530 etching Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 45
- 239000004020 conductor Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum (Al) Chemical class 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
第1実施例に係る半導体装置の製造方法を説明する。第1実施例の製造方法では、まず図1に示すように、半導体基板2の表面28にマスク91を形成し、マスク91に開口部92を形成する。この段階では、開口部92から半導体基板2が露出する。次に、マスク91の開口部92に露出している半導体基板2を異方性エッチングする。これによって、半導体基板2の表面28にトレンチ11が形成される。トレンチ11は、底面112と、左右の側面111,111を備えている。半導体基板2は、例えば、Si(シリコン)またはSiC(炭化ケイ素)から形成されている。マスク91は、例えば、TEOS(Tetraethyl Orthosilicate)から形成されている。本実施例では、フッ素系のガスを用いて半導体基板2を異方性ドライエッチングする。エッチングをした後にマスク91を除去する。
上記の実施例では、トレンチ11の内部に第2絶縁材料6を薄く堆積させていたが、この構成に限定されるものではない。第2実施例では、図8に示すように、閉塞工程に続けて第2絶縁材料6を厚く堆積させてもよい。トレンチ11の内部の硬化部41より上の部分全体に第2絶縁材料6を充填してもよい(第2絶縁材料充填工程)。すなわち、第2絶縁材料6の膜より内側のトレンチ11の内部に第2絶縁材料6を更に充填する。この方法によれば、閉塞工程と第2絶縁材料充填工程を続けて実行できるので、トレンチ11の内部に第2絶縁材料6を素早く充填することができる。閉塞工程と第2絶縁材料充填工程を一つの工程として実行することができる。
第3実施例に係る半導体装置の製造方法について説明する。上記の第1実施例では、閉塞工程の後に、トレンチ11の内部に第3絶縁材料9を充填していたが、この構成に限定されるものではない。第3実施例では、図9に示すように、閉塞工程の後に、トレンチ11の内部に導電材料7(ゲート電極となる材料)を充填する(ゲート電極充填工程)。導電材料7を第2絶縁材料6の薄膜の表面に成長させる。本実施例では、導電材料7としてポリシリコン(Poly Si)を用いている。トレンチ11の内部に導電材料7が堆積してゲート電極が形成される。
2 :半導体基板
3 :第1絶縁材料
5 :空間
6 :第2絶縁材料
7 :導電材料
9 :第3絶縁材料
11 :トレンチ
12 :ゲート絶縁膜
13 :ゲート電極
14 :層間絶縁膜
21 :ドレイン領域
23 :ドリフト領域
24 :ベース領域
25 :ソース領域
26 :コンタクト領域
27 :フローティング領域
28 :表面
29 :裏面
31 :界面
32 :深部側の端部
41 :硬化部
43 :開口部
51 :表面電極
52 :裏面電極
91 :マスク
92 :開口部
111 :側面
112 :底面
411 :表面
Claims (4)
- 半導体基板の表面に形成されているトレンチの内面に、酸化物からなる第1絶縁材料を成長させ、前記トレンチの内部に前記第1絶縁材料を充填する充填工程と、
前記トレンチの内部に充填された前記第1絶縁材料の表面側をエッチングして除去する第1エッチング工程と、
前記半導体基板を非酸化雰囲気で加熱し、前記第1エッチング工程で除去されずに前記トレンチの深部側に残存した前記第1絶縁材料の表面を硬化させて硬化部を形成する加熱工程と、
前記トレンチの両側面から成長した前記第1絶縁材料同士の界面であって前記硬化部に残存した前記界面から、前記硬化部より深部側にエッチャントを侵入させて前記硬化部より深部側に残存した前記第1絶縁材料をエッチングして除去し、前記硬化部より深部側に空間を形成する第2エッチング工程と、
前記第2エッチング工程で前記界面に形成された開口部を、第2絶縁材料で塞ぐ閉塞工程を備えている半導体装置の製造方法。 - 前記閉塞工程で、前記硬化部の表面と前記トレンチの側面に、前記第2絶縁材料の膜を成長させ、
前記閉塞工程に続けて、前記膜より内側の前記トレンチの内部に前記第2絶縁材料を充填する第2絶縁材料充填工程を備えている請求項1に記載の半導体装置の製造方法。 - 前記閉塞工程で、前記硬化部の表面と前記トレンチの側面に、前記第2絶縁材料の膜を成長させ、
前記閉塞工程の後に、前記膜より内側の前記トレンチの内部に第3絶縁材料を充填する第3絶縁材料充填工程を備えている請求項1に記載の半導体装置の製造方法。 - 前記閉塞工程で、前記硬化部の表面と前記トレンチの側面に、前記第2絶縁材料の膜を成長させ、
前記閉塞工程の後に、前記膜より内側の前記トレンチの内部にゲート電極となる材料を充填するゲート電極充填工程を備えている請求項1に記載の半導体装置の製造方法。
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JP2015164080A JP6301882B2 (ja) | 2015-08-21 | 2015-08-21 | 半導体装置の製造方法と半導体装置 |
US15/238,180 US20170053992A1 (en) | 2015-08-21 | 2016-08-16 | Method of manufacturing a semiconductor device and semiconductor device |
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JP2015164080A JP6301882B2 (ja) | 2015-08-21 | 2015-08-21 | 半導体装置の製造方法と半導体装置 |
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JP6560141B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
JP6560142B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
JP6724844B2 (ja) * | 2017-03-30 | 2020-07-15 | 豊田合成株式会社 | 半導体装置 |
JP6817895B2 (ja) * | 2017-05-24 | 2021-01-20 | 株式会社東芝 | 半導体装置 |
JP7204454B2 (ja) * | 2018-11-30 | 2023-01-16 | 株式会社豊田中央研究所 | 半導体装置 |
US20230051830A1 (en) * | 2021-08-13 | 2023-02-16 | Infineon Technologies Ag | Semiconductor device and method of producing thereof |
CN115775823B (zh) * | 2022-11-29 | 2023-07-21 | 上海功成半导体科技有限公司 | 屏蔽栅功率器件及其制备方法 |
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JPH02119238A (ja) * | 1988-10-28 | 1990-05-07 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH07245400A (ja) * | 1994-03-08 | 1995-09-19 | Toshiba Corp | 電界効果型トランジスタとその製造方法 |
GB0129450D0 (en) * | 2001-12-08 | 2002-01-30 | Koninkl Philips Electronics Nv | Trenched semiconductor devices and their manufacture |
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JP2006066611A (ja) * | 2004-08-26 | 2006-03-09 | Toshiba Corp | 半導体装置 |
US7396732B2 (en) * | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
JP5195357B2 (ja) * | 2008-12-01 | 2013-05-08 | トヨタ自動車株式会社 | 半導体装置 |
JP2010161241A (ja) * | 2009-01-08 | 2010-07-22 | Toyota Motor Corp | 半導体装置および半導体装置の製造方法 |
US8319278B1 (en) * | 2009-03-31 | 2012-11-27 | Maxpower Semiconductor, Inc. | Power device structures and methods using empty space zones |
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