JP2017079239A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
- Publication number
- JP2017079239A JP2017079239A JP2015205759A JP2015205759A JP2017079239A JP 2017079239 A JP2017079239 A JP 2017079239A JP 2015205759 A JP2015205759 A JP 2015205759A JP 2015205759 A JP2015205759 A JP 2015205759A JP 2017079239 A JP2017079239 A JP 2017079239A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- contact hole
- insulating film
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000010410 layer Substances 0.000 claims abstract description 314
- 239000011229 interlayer Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims description 38
- 238000006073 displacement reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract 13
- 238000007669 thermal treatment Methods 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 46
- 229910010271 silicon carbide Inorganic materials 0.000 description 46
- 238000010438 heat treatment Methods 0.000 description 18
- 210000000746 body region Anatomy 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000002344 surface layer Substances 0.000 description 14
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Abstract
【解決手段】層間絶縁膜50形成工程では、各ゲート電極40の上面と半導体基板12の上面を覆う第1絶縁層51と、第1絶縁層51上に配置されているとともに第1絶縁層51よりも低い軟化点を有する第2絶縁層52を備える層間絶縁膜50を形成する。隣接する2つのトレンチ34の間の位置にコンタクトホール54が設けられているように層間絶縁膜50を形成する。曲面化工程では、第1絶縁層51の軟化点より低いとともに第2絶縁層52の軟化点より高い温度で層間絶縁膜50を熱処理することによって、第2絶縁層52の表面を曲面化する。上部電極80形成工程では、層間絶縁膜50とコンタクトホール54を覆うように上部電極層80を形成する。
【選択図】図1
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12 :SiC基板
22 :ソース領域
26 :ボディ領域
28 :ドリフト領域
30 :ドレイン領域
34 :トレンチ
38 :ゲート絶縁膜
40 :ゲート電極
50 :層間絶縁膜
51 :第1絶縁層
52 :第2絶縁層
54 :コンタクトホール
80 :ソース電極
80a :コンタクト層
80b :中間層
80c :表面層
84 :ドレイン電極
Claims (5)
- 半導体装置の製造方法であって、
半導体基板の上面に、複数のトレンチを形成する工程と、
前記各トレンチ内に、ゲート絶縁膜を形成する工程と、
前記各トレンチ内に、前記ゲート絶縁膜によって前記半導体基板から絶縁されているゲート電極を形成する工程と、
前記各ゲート電極の上面と前記半導体基板の上面を覆う第1絶縁層と、前記第1絶縁層上に配置されているとともに前記第1絶縁層よりも低い軟化点を有する第2絶縁層を備えており、隣接する2つの前記トレンチの間の位置にコンタクトホールが設けられている層間絶縁膜を形成する工程と、
前記第1絶縁層の軟化点より低いとともに前記第2絶縁層の軟化点より高い温度で前記層間絶縁膜を熱処理することによって、前記第2絶縁層の端部の表面が前記コンタクトホールから前記トレンチの中心に向かう従って上側に変位する向きに傾斜しているように前記第2絶縁層の表面を曲面化する工程と、
前記層間絶縁膜と前記コンタクトホールを覆うように上部電極層を形成する工程、
を有している製造方法。 - 前記層間絶縁膜を形成する工程が、
前記各ゲート電極の前記上面と前記半導体基板の前記上面を覆うように前記第1絶縁層を形成する工程と、
前記第1絶縁層上に前記第2絶縁層を形成する工程と、
隣接する2つの前記トレンチの間の位置で前記第2絶縁層をエッチングする工程と、
前記第2絶縁層をエッチングした範囲よりも狭い範囲で前記第1絶縁層をエッチングすることによって前記コンタクトホールを形成する工程、
を有する請求項1の製造方法。 - 前記第2絶縁層をエッチングする工程では、マスクを介して前記第2絶縁層を等方性エッチングし、
前記第1絶縁層をエッチングする工程では、前記マスクを介して前記第1絶縁層を異方性エッチングする、
請求項2の製造方法。 - 半導体装置であって、
半導体基板と、
半導体基板の上面に設けられている複数のトレンチと、
前記各トレンチ内に配置されているゲート絶縁膜と、
前記各トレンチ内に配置されており、前記ゲート絶縁膜によって前記半導体基板から絶縁されているゲート電極と、
前記各ゲート電極の上面と前記半導体基板の上面を覆う第1絶縁層と、前記第1絶縁層上に配置されているとともに前記第1絶縁層よりも低い軟化点を有する第2絶縁層を備えており、隣接する2つの前記トレンチの間の位置にコンタクトホールが設けられている層間絶縁膜と、
前記層間絶縁膜と前記コンタクトホールを覆っている上部電極層、
を有し、
前記第1絶縁層の上面が平坦であり、
前記第2絶縁層の表面が曲面であり、前記第2絶縁層の端部の表面が前記コンタクトホールから前記トレンチの中心に向かうに従って上側に変位する向きに傾斜している、
半導体装置。 - 前記第2絶縁層の中央部の表面が、凸状に湾曲する曲面であり、
前記第2絶縁層の端部の表面が、凹状に湾曲する曲面である、
請求項4の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015205759A JP6475142B2 (ja) | 2015-10-19 | 2015-10-19 | 半導体装置とその製造方法 |
PCT/JP2016/004253 WO2017068749A1 (en) | 2015-10-19 | 2016-09-16 | Semiconductor device and manufacturing method thereof |
CN201680060502.0A CN108292668A (zh) | 2015-10-19 | 2016-09-16 | 半导体器件及其制造方法 |
US15/765,120 US20180286974A1 (en) | 2015-10-19 | 2016-09-16 | Semiconductor device and manufacturing method thereof |
EP16778466.9A EP3365918A1 (en) | 2015-10-19 | 2016-09-16 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015205759A JP6475142B2 (ja) | 2015-10-19 | 2015-10-19 | 半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017079239A true JP2017079239A (ja) | 2017-04-27 |
JP6475142B2 JP6475142B2 (ja) | 2019-02-27 |
Family
ID=57113644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015205759A Active JP6475142B2 (ja) | 2015-10-19 | 2015-10-19 | 半導体装置とその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20180286974A1 (ja) |
EP (1) | EP3365918A1 (ja) |
JP (1) | JP6475142B2 (ja) |
CN (1) | CN108292668A (ja) |
WO (1) | WO2017068749A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019176466A1 (ja) * | 2018-03-15 | 2019-09-19 | 三菱電機株式会社 | 半導体装置、電力変換装置 |
JP2020092208A (ja) * | 2018-12-06 | 2020-06-11 | トヨタ自動車株式会社 | トレンチゲート型半導体装置の製造方法 |
WO2023084939A1 (ja) * | 2021-11-10 | 2023-05-19 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
WO2024014149A1 (ja) * | 2022-07-15 | 2024-01-18 | ローム株式会社 | 電子部品および電子モジュール |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6560141B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
JP6560142B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
CN109713041B (zh) * | 2018-12-27 | 2022-05-24 | 四川立泰电子有限公司 | 一种适用于超结dmos器件的改良结构 |
JP7419740B2 (ja) | 2019-10-11 | 2024-01-23 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US11563101B2 (en) * | 2020-07-07 | 2023-01-24 | Wolfspeed, Inc. | Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263692A (ja) * | 1994-02-04 | 1995-10-13 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH11111983A (ja) * | 1997-08-08 | 1999-04-23 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
US20050224869A1 (en) * | 2004-04-09 | 2005-10-13 | Wei-Jye Lin | Contact process and structure for a semiconductor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2734344B2 (ja) * | 1993-08-20 | 1998-03-30 | 株式会社デンソー | 半導体装置の製造方法 |
JP3481287B2 (ja) * | 1994-02-24 | 2003-12-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5672907A (en) * | 1995-03-22 | 1997-09-30 | Nippon Steel Corporation | Semiconductor device having character in BPSG film |
US5973361A (en) * | 1996-03-06 | 1999-10-26 | Magepower Semiconductor Corporation | DMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggedness |
US6239017B1 (en) * | 1998-09-18 | 2001-05-29 | Industrial Technology Research Institute | Dual damascene CMP process with BPSG reflowed contact hole |
JP2003017595A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 半導体装置 |
JP2005249895A (ja) * | 2004-03-02 | 2005-09-15 | Tdk Corp | 石英光導波路及びその製造方法 |
JP2005327799A (ja) * | 2004-05-12 | 2005-11-24 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2006140372A (ja) * | 2004-11-15 | 2006-06-01 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP4450241B2 (ja) * | 2007-03-20 | 2010-04-14 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP4600936B2 (ja) * | 2007-06-20 | 2010-12-22 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2011171551A (ja) * | 2010-02-19 | 2011-09-01 | Toyota Motor Corp | 半導体装置の製造方法 |
WO2011116524A1 (zh) * | 2010-03-25 | 2011-09-29 | 香港商莫斯飞特半导体有限公司 | 具有低栅电阻的沟槽型半导体功率器件及其制备方法 |
JP5510309B2 (ja) * | 2010-12-22 | 2014-06-04 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US8786010B2 (en) * | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
JP5884357B2 (ja) * | 2011-09-22 | 2016-03-15 | 株式会社デンソー | 炭化珪素半導体装置 |
-
2015
- 2015-10-19 JP JP2015205759A patent/JP6475142B2/ja active Active
-
2016
- 2016-09-16 WO PCT/JP2016/004253 patent/WO2017068749A1/en active Application Filing
- 2016-09-16 EP EP16778466.9A patent/EP3365918A1/en not_active Withdrawn
- 2016-09-16 US US15/765,120 patent/US20180286974A1/en not_active Abandoned
- 2016-09-16 CN CN201680060502.0A patent/CN108292668A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263692A (ja) * | 1994-02-04 | 1995-10-13 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH11111983A (ja) * | 1997-08-08 | 1999-04-23 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
US20050224869A1 (en) * | 2004-04-09 | 2005-10-13 | Wei-Jye Lin | Contact process and structure for a semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019176466A1 (ja) * | 2018-03-15 | 2019-09-19 | 三菱電機株式会社 | 半導体装置、電力変換装置 |
JPWO2019176466A1 (ja) * | 2018-03-15 | 2020-10-22 | 三菱電機株式会社 | 半導体装置、電力変換装置 |
US11437505B2 (en) | 2018-03-15 | 2022-09-06 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
JP2020092208A (ja) * | 2018-12-06 | 2020-06-11 | トヨタ自動車株式会社 | トレンチゲート型半導体装置の製造方法 |
WO2023084939A1 (ja) * | 2021-11-10 | 2023-05-19 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
WO2024014149A1 (ja) * | 2022-07-15 | 2024-01-18 | ローム株式会社 | 電子部品および電子モジュール |
Also Published As
Publication number | Publication date |
---|---|
CN108292668A (zh) | 2018-07-17 |
US20180286974A1 (en) | 2018-10-04 |
EP3365918A1 (en) | 2018-08-29 |
WO2017068749A1 (en) | 2017-04-27 |
JP6475142B2 (ja) | 2019-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6475142B2 (ja) | 半導体装置とその製造方法 | |
JP6203697B2 (ja) | 半導体装置およびその製造方法 | |
JP6341074B2 (ja) | 半導体装置の製造方法 | |
JP5510309B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP5012286B2 (ja) | 酸化膜電界効果トランジスタ | |
JP5845714B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP6301882B2 (ja) | 半導体装置の製造方法と半導体装置 | |
TWI539577B (zh) | 用於溝槽式裝置的整合式閘極佈設區及場植入部終止技術 | |
JP2008160039A (ja) | 半導体装置及びその製造方法 | |
WO2012137412A1 (ja) | 半導体装置およびその製造方法 | |
US9178055B2 (en) | Semiconductor device | |
JP5098489B2 (ja) | 酸化膜電界効果トランジスタの製造方法 | |
TWI545752B (zh) | 半導體裝置及其形成方法 | |
JP6138619B2 (ja) | 半導体装置の製造方法および半導体装置 | |
WO2016076055A1 (ja) | 炭化珪素半導体スイッチング素子およびその製造方法 | |
JP2012124536A (ja) | 酸化膜電界効果トランジスタおよびその製造方法 | |
WO2019202350A1 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP5729317B2 (ja) | 半導体装置およびその製造方法 | |
JP6648743B2 (ja) | 炭化珪素半導体装置の製造方法 | |
KR20100088854A (ko) | 반도체 장치 및 그의 제조 방법 | |
JP5412730B2 (ja) | 半導体装置の製造方法 | |
JP2017028056A (ja) | 半導体装置の製造方法 | |
JP2019087612A (ja) | 半導体装置の製造方法 | |
WO2011117920A1 (ja) | 半導体装置およびその製造方法 | |
JP7388197B2 (ja) | トレンチゲート型スイッチング素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180315 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181002 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190131 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6475142 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |