JP2004537847A5 - - Google Patents

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JP2004537847A5
JP2004537847A5 JP2003504424A JP2003504424A JP2004537847A5 JP 2004537847 A5 JP2004537847 A5 JP 2004537847A5 JP 2003504424 A JP2003504424 A JP 2003504424A JP 2003504424 A JP2003504424 A JP 2003504424A JP 2004537847 A5 JP2004537847 A5 JP 2004537847A5
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layer
internal connection
dielectric material
thickness
oxide
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JP2003504424A
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JP2004537847A (ja
JP5004406B2 (ja
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Priority claimed from US09/878,442 external-priority patent/US6972436B2/en
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JP2003504424A 2001-06-11 2002-03-26 コンデンサ及びその製造方法 Expired - Lifetime JP5004406B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/878,442 US6972436B2 (en) 1998-08-28 2001-06-11 High voltage, high temperature capacitor and interconnection structures
US09/878,442 2001-06-11
PCT/US2002/009393 WO2002101767A2 (en) 2001-06-11 2002-03-26 High voltage, high temperature capacitor structures and methods of fabricating same

Related Child Applications (1)

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JP2012073492A Division JP5726800B2 (ja) 2001-06-11 2012-03-28 コンデンサ及びその製造方法

Publications (3)

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JP2004537847A JP2004537847A (ja) 2004-12-16
JP2004537847A5 true JP2004537847A5 (enExample) 2006-01-05
JP5004406B2 JP5004406B2 (ja) 2012-08-22

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JP2012073492A Expired - Lifetime JP5726800B2 (ja) 2001-06-11 2012-03-28 コンデンサ及びその製造方法

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US (2) US6972436B2 (enExample)
EP (1) EP1412970B1 (enExample)
JP (2) JP5004406B2 (enExample)
KR (1) KR100949844B1 (enExample)
CN (1) CN1266742C (enExample)
AU (1) AU2002258625A1 (enExample)
CA (1) CA2448006C (enExample)
WO (1) WO2002101767A2 (enExample)

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