JP2002514320A - Active matrix light emitting diode pixel structure and method - Google Patents

Active matrix light emitting diode pixel structure and method

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JP2002514320A
JP2002514320A JP54637898A JP54637898A JP2002514320A JP 2002514320 A JP2002514320 A JP 2002514320A JP 54637898 A JP54637898 A JP 54637898A JP 54637898 A JP54637898 A JP 54637898A JP 2002514320 A JP2002514320 A JP 2002514320A
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transistor
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JP4251377B2 (en
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イプリ,アルフレッド,チャールズ
ケイン,マイケル,ギリス
スー,ジェイムズ,ヤ−コング
スー,フ−ラング
ステュワート,ロジャー,グリーン
ドーソン,ロビン,マーク,アドリアン
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サーノフ コーポレイション
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Priority to US60/044,174 priority
Priority to US09/064,696 priority patent/US6229506B1/en
Priority to US6469798A priority
Priority to US09/064,696 priority
Priority to US09/064,697 priority
Priority to PCT/US1998/008367 priority patent/WO1998048403A1/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G09G3/3241Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
    • G09G3/325Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror the data current flowing through the driving transistor during a setting phase, e.g. by using a switch for connecting the driving transistor to the data driver
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0819Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/04Maintaining the quality of display appearance
    • G09G2320/043Preventing or counteracting the effects of ageing

Abstract

(57)【要約】 ピクセル構造の「駆動トランジスタ」の電流不均一性及び閾値電圧変化を低減するLEDピクセル構造(200、300、400、600、700)を開示する。 (57) Abstract: discloses a LED pixel structure (200,300,400,600,700) to reduce the current nonuniformity and threshold voltage variations in a "drive transistor" of the pixel structure. LEDピクセル構造は、電流源を組み込んでおり、データをピクセルにデータラインを通してロードする。 LED pixel structure incorporates a current source, it is loaded via data line data to the pixel. 代わりに、オートゼロの電圧は、駆動トランジスタデータのロードに先立って決定される。 Instead, the voltage auto-zero is determined prior to the loading of the drive transistor data.

Description

【発明の詳細な説明】 アクティブマトリックス発光ダイオードピクセル構造及び方法 本出願は、1997年4月23日に出願された米国仮出願第60/044,174号の利益を主張する。 DETAILED DESCRIPTION OF THE INVENTION Active matrix light emitting diode pixel structure and method This application claims the benefit of U.S. Provisional Application No. 60 / 044,174, filed Apr. 23, 1997. その内容は本明細書に援用されている。 The contents of which are incorporated herein by reference. 本発明は、契約番号F33615-96-2-1944の下、米国政府の支持を得てなされた。 The present invention under Contract No. F33615-96-2-1944, was made with the support of the United States Government. 米国政府は、本発明において確かな(certain)権利を有する。 The United States Government has certain (certain) rights in this invention. 本発明は、アクティブマトリックス発光ダイオードピクセル構造に関する。 The present invention relates to an active matrix light emitting diode pixel structure. 更に詳細には、本発明は、ピクセル構造の「駆動トランジスタ」において、電流不均一性及び閾値電圧変化を低減するピクセル構造、及び前記アクティブマトリックス発光ダイオードピクセル構造を動作する方法に関する。 More particularly, the present invention provides a "driving transistor" in the pixel structure, the pixel structure to reduce the current nonuniformity and threshold voltage variations, and a method for operating the active matrix light emitting diode pixel structure. 開示の背景 マトリックスディスプレイは当該技術においてかなり知られており、図1で示すように、マトリックスアドレッシングを使用してピクセルが照明される(illu minate)。 Background Matrix displays disclosed are quite known in the art, as shown in Figure 1, the pixel using a matrix addressing is illuminated (illu minate). 代表的なディスプレイ100は、行列(ロー及びカラム)に配置された複数のピクチャ又は表示部材(ピクセル)160を含む。 The exemplary display 100 includes a plurality of picture or display element (pixel) 160 disposed in a matrix (rows and columns). ディスプレイは、カラムデータ発生装置110及びローセレクト発生装置120を組み込んでいる。 Display incorporates a column data generator 110 and the low-select generator 120. 動作中、各ローはローライン130を通して順に起動され、対応するカラムライン140を用いて対応するピクセルが起動させられる。 In operation, each row is activated through a low line 130 sequentially, the corresponding pixel is to start with a corresponding column line 140. パッシブマトリックスディスプレイでは、ピクセルの各ローは順に1つずつ照明されるが、アクティブマトリックスディスプレイでは、ピクセルの各ローは、最初にデータと共に連続してロードされる。 In passive matrix display, each row of pixels is illuminated by one turn, in the active matrix display, each row of pixels is loaded in succession with the first data. 例えばラップトップコンピュータといったポータブルなディスプレイの使用が増加し、種々のディスプレイテクノロジー(例えば液晶ディスプレイ(LCD) 及び発光ダイオード(LED)ディスプレイ)が、採用されてきている。 For example the use of a portable display is increased such laptop computers, various display technologies (for example, a liquid crystal display (LCD) and light emitting diode (LED) display), have been adopted. これらの2つの技術の重要な差異は、LEDが発光装置であって、非発光装置(LCD 等)よりもパワー効率上の利点を有することである。 An important difference between these two techniques, LED is a light-emitting device is that it has advantages over the power efficiency than non-light emitting device (LCD, etc.). LCDにおいて、蛍光性のバックライトは、ディスプレイが使用中である持続時間全体でオンであり、ピクセルを「オフ」するためにさえパワーを消費する。 In LCD, fluorescent backlight display is on throughout the duration is in use, consuming power even to "off" pixels. これに対して、LED(又はOLED)ディスプレイは、起動されたピクセルのみを照明し、「オフ」ピクセルを照明しないことによってパワーを節約する。 In contrast, LED (or OLED) display illuminates only start pixel, to conserve power by not illuminating the "off" pixels. OLEDピクセル構造を採用したディスプレイは、パワー消費量を低減することができるが、このようなピクセル構造は強度に不均一性を示す可能性があり、 それは、製造による駆動トランジスタ及びトランジスタ不均一性の閾値電圧ドリフトに起因している。 Display employing the OLED pixel structure can be reduced power consumption, such pixel structure may exhibit heterogeneity in strength, it is the driver transistor and the transistor heterogeneity due to manufacturing It is due to the threshold voltage drift. しかし、OLEDの明るさがOLEDを通過する電流に比例していることが判った。 However, it was found that the brightness of the OLED is proportional to the current passing through the OLED. 従って、ピクセル構造の「駆動トランジスタ」における電流不均一性及び閾値電圧変化を低減するピクセル構造及び付随する方法が、当該技術に必要である。 Therefore, a method of the pixel structure and concomitant decrease the current nonuniformity and threshold voltage variations in a "drive transistor" of the pixel structure is needed in the art. 発明の概要 本発明の一実施形態では、電流源がLED(OLED)ピクセル構造の中に組み込まれており、ピクセル構造の駆動トランジスタでの電流不均一性及び閾値電圧変化を低減する。 Summary of the Invention In one embodiment of the present invention, a current source is built into the LED (OLED) pixel structure, to reduce the current nonuniformity and threshold voltage variations in the drive transistor of the pixel structure. 電流源はデータラインに結合されており、そこでは、一定の電流が最初にプログラムされており、それから収集される。 Current source is coupled to the data line, where the constant current are initially programmed, which is then collected. 代わりの実施形態では、オートゼロ(auto zero)電圧を決定して記憶するオートゼロフェーズで、基準電圧を最初に適用することによって一定の電流が達成される。 In an alternative embodiment, the auto-zero phase determined and stored autozero (auto zero) voltage, a constant current is achieved by applying a reference voltage to the first. オートゼロの電圧は、駆動トランジスタの閾値電圧を効果的に説明する。 Voltage auto-zero effectively explaining the threshold voltage of the driving transistor. 次に、同じ基準電圧に関連するデータ電圧が、ピクセルを照明するために、今、適用される。 Then, the data voltages associated with the same reference voltage, in order to illuminate the pixel, now applies. 他の実施形態では、レジスタがLED(OLED)ピクセル構造内に組み込まれており、駆動トランジスタの閾値電圧に対する、OLEDを通過した電流の依存の感度を下げるようになっている。 In other embodiments, the register is built into the LED (OLED) in the pixel structure, for the threshold voltage of the driving transistor, so that the lower the sensitivity of the dependence of the current passing through the OLED. 図面の簡単な説明 本発明の教示内容は、添付図面に関連して、以下の詳細な説明を考慮することによって容易に理解されることができる。 Teachings BRIEF DESCRIPTION OF THE DRAWINGS The present invention, in conjunction with the accompanying drawings, it can be readily understood by considering the following detailed description. 図1は、マトリックスアドレッシングインタフェースのブロック図である。 Figure 1 is a block diagram of a matrix addressing interface. 図2は、本発明のアクティブマトリックスLEDピクセル構造の回路図である。 Figure 2 is a circuit diagram of an active matrix LED pixel structure of the present invention. 図3は、本発明のアクティブマトリックスLEDピクセル構造の代替の実施形態の回路図である。 Figure 3 is a circuit diagram of an alternate embodiment of an active matrix LED pixel structure of the present invention. 図4は、本発明のアクティブマトリックスLEDピクセル構造の他の代替の実施形態の回路図である。 Figure 4 is a circuit diagram of another alternative embodiment of an active matrix LED pixel structure of the present invention. 図5は、本発明の複数のアクティブマトリックスLEDピクセル構造を有するディスプレイを使ったシステムのブロック図である。 Figure 5 is a block diagram of a system using a display having a plurality of active matrix LED pixel structure of the present invention. 図6は、図2のアクティブマトリックスLEDピクセル構造の代替の実施形態の回路図である。 Figure 6 is a circuit diagram of an alternate embodiment of an active matrix LED pixel structure of FIG. 図7は、本発明のアクティブマトリックスLEDピクセル構造の代替の実施形態の回路図である。 Figure 7 is a circuit diagram of an alternate embodiment of an active matrix LED pixel structure of the present invention. 理解を容易にするために、図に共通の同一の部材を示すために可能なところでは同一の参照数字を使用した。 For ease of understanding, and the same reference numerals where possible to indicate the common same members in FIG. 詳細な説明 図2は、本発明のアクティブマトリックスLEDピクセル構造200の回路図を示す。 DETAILED DESCRIPTION Figure 2 shows a circuit diagram of an active matrix LED pixel structure 200 of the present invention. 好ましい実施形態において、アクティブマトリックスLEDピクセル構造は、例えば、アモルファス又はポリシリコンを使用して製造されるトランジスタである薄膜トランジスタ(TFT)を使用して実行される。 In a preferred embodiment, the active matrix LED pixel structure, for example, be performed using a thin film transistor (TFT) is a transistor manufactured using amorphous or polysilicon. 同じように、好ましい実施形態において、アクティブマトリックスLEDピクセル構造は、有機発光ダイオード(OLED)を組み込んでいる。 Similarly, in a preferred embodiment, the active matrix LED pixel structure incorporates an organic light-emitting diode (OLED). 本ピクセル構造は薄膜トランジスタ及び有機発光ダイオードを使用して実行されるが、本発明がトランジスタ及び発光ダイオードの他のタイプを使用して実行されることができることが理解されなくてはならない。 This pixel structure is performed using the thin film transistor and organic light emitting diodes, the present invention must be understood that it can be performed using other types of transistors and light emitting diodes. 例えば、他の材料を使用して製造されるトランジスタが上述したように閾値不均一性を示するならば、本発明は、照明部材を通して一定の電流を提供するために使われることができる。 For example, if transistors fabricated using other materials that show a threshold heterogeneity, as described above, the present invention can be used to provide a constant current through the illumination member. 本発明を、単一のピクセル又はピクセル構造として下に示すが、ピクセルはディスプレイを形成するために他のピクセルと(例えば配列で)使用することができることを理解しなければならない。 The present invention is illustrated below as a single pixel or pixel structure, a pixel must understand that they can be used with other pixel (e.g., in sequence) to form a display. 更に、下の図は特定のトランジスタ形状を示すが、トランジスタのソースが電圧サインに対応することを理解されなければならない。 Furthermore, although the figure below shows the particular transistor geometry should be understood that the source of the transistor corresponds to the voltage sign. 図2について述べる。 It described FIG. ピクセル構造200は、3つのPMOSトランジスタ2 40、250、260、NMOSトランジスタ270、コンデンサ280及びL ED(OLED)290(光部材)を含む。 Pixel structure 200 comprises three PMOS transistors 2 40,250,260, NMOS transistor 270, a capacitor 280 and L ED (OLED) 290 (light element). セレクトライン210は、トランジスタ240、250及び270のゲートに結合されている。 Select line 210 is coupled to the gates of transistors 240 and 250 and 270. データラインはトランジスタ250のソースに結合され、+V DDラインはトランジスタ270のドレインに結合されている。 Data line is coupled to the source of transistor 250, + V DD line is coupled to the drain of the transistor 270. OLED290の1つの電極は、トランジスタ240及び260のドレインに結合されている。 One electrode of OLED290 is coupled to the drain of transistor 240 and 260. トランジスタ240のソースは、トランジスタ260のゲート及びコンデンサ280の1つのターミナルに結合されている。 The source of transistor 240 is coupled to one terminal of the gate and the capacitor 280 of the transistor 260. 最後に、トランジスタ250のドレイン、トランジスタ270のソース、トランジスタ260のソース及びコンデンサ280の1つのターミナルは、全て1 つに結合されている。 Finally, one terminal of the source and the capacitor 280 of the drain, the source of the transistor 270, the transistor 260 of the transistor 250 is coupled to all one. 本ピクセル構造200は、大きな閾値電圧(V t )不均一性存在下で、均一な電流駆動を提供する。 The present pixel structure 200 is a non-uniformity presence large threshold voltage (V t), to provide a uniform current drive. 言い換えると、OLEDを横切って均一な電流を維持し、 ディスプレイの強度の中で均一性を確保することが望ましい。 In other words, across the OLED to maintain a uniform current, it is desirable to ensure uniformity in the intensity of the display. より詳細には、OLEDピクセル構造は、2つのフェーズ、ロードデータフェーズ及び連続照明フェーズにおいて動作される。 More particularly, OLED pixel structure, two phases are operated in the load data phase and the continuous lighting phases. ロードデータフェーズ ピクセル構造200は、適当なセレクトライン210を駆動させることによってデータがロードされ得る。 Loading data phase pixel structure 200, the data by driving the appropriate select line 210 may be loaded. 即ち、セレクトラインが「ロー」にセットされると、トランジスタP4(240)は「オン」にされ、OLED290の陽極側の電圧がトランジスタP2(260)のゲートに送られる。 That is, when the select line is set to "low", the transistor P4 (240) is "on", the voltage on the anode side of OLED290 is sent to the gate of the transistor P2 (260). 同時に、トランジスタP 1(250)も、「オン」にされ、データライン220からの一定の電流がトランジスタP2(260)及びOLED290の両方を流れる。 At the same time, transistor P 1 (250) is also turned "on", a constant current from the data line 220 flows through both transistors P2 (260) and OLED290. 即ち、トランジスタ260は、電流源230によって駆動された電流を下げるためにオンにする。 That is, the transistor 260 turns on to lower the current that is driven by a current source 230. データラインを駆動する電流源230は、外部のデータによってプログラムされている。 Current source 230 for driving the data line is programmed by the external data. トランジスタ260(駆動トランジスタ)のソース電圧へのゲートは、 次に電流を駆動するために必要な電圧に定まる。 The gate to source voltage of the transistor 260 (driving transistor) is then determined for the voltage required to drive current. 同時に、トランジスタN1(2 70)は「オフ」にされて、電源+V DDはOLED290から切り離される。 At the same time, the transistor N1 (2 70) is set to "OFF", the power supply + V DD is disconnected from OLED290. 一定の電流源230も、ソースからゲートへの電圧を自己調整し、固定オーバドライブ値(電圧)をトランジスタ260に適応させ、ポリシリコンTFT260の閾値変化を補う。 A constant current source 230 is also the voltage to the gate from the source and self-adjusting, fixed overdrive value (voltage) are adapted to the transistor 260, compensate for the threshold variation of the polysilicon TFT 260. オーバドライブ電圧は、データを示す。 Overdrive voltage, show the data. 順番に、データは記憶コンデンサC S 280の上で、適切に記憶される。 In turn, the data on the storage capacitor C S 280, is appropriately stored. これでデータのためのロード又はライトサイクルを完了する。 This completes the loading or write cycle for data. 連続照明フェーズ セレクトラインが「ハイ」にセットされると、P1(250)及びP4(24 0)の両トランジスタは「オフ」にされ、トランジスタN1(270)は「オン」にされる。 When continuous illumination phase select line is set to "high", both transistors P1 (250) and P4 (24 0) is turned "off", the transistor N1 (270) is "on". トランジスタ260の電源電圧がわずかに変化する可能性があるが、トランジスタ260のソースからゲートへの電圧が照明サイクル中の電流レベルを制御する。 There is a possibility that the power supply voltage of the transistor 260 is changed slightly, the voltage to the gate from the source of the transistor 260 controls the current level in the light cycle. コンデンサ280を横切るトランジスタ270のV SGは、即座に変わることができない。 V SG of transistor 270 across the capacitor 280, can not be immediately changed. このように、トランジスタ260のゲート電圧はソース電圧を追尾し、ソースからゲートへの電圧が、全体のロード及び照明フェーズを通して維持される。 Thus, the gate voltage of the transistor 260 to track the source voltage, the voltage to the gate from the source is maintained throughout the load and the illumination phase. ポリシリコンTFTの漏れ電流及びOLEDのグレースケール輝度に要求される電圧解像度は、フレームタイムの有効データを保持するために必要な記憶コンデンサのサイズを決定する。 Voltage resolution required in the leakage current and the gray-scale brightness of the OLED of the polysilicon TFT determines the size of the storage capacitor required to hold the effective data of the frame time. 好ましい実施形態において、コンデンサは0.25pfのオーダにある。 In a preferred embodiment, the capacitor is in the order of 0.25 pF. 即ち、トランジスタ260の電流漏れを考慮するのにコンデンサは十分大きいであろう。 That is, the capacitor to account for current leakage of the transistor 260 will be sufficiently large. これで照明フェーズピクセル動作を完了する。 This completes the lighting phase pixel operation. 各データ/カラムライン220はそれ自身のプログラムされた一定の電流源2 30を有する点に留意する必要がある。 Each data / column line 220 should be noted that with a constant current source 2 30, which is its own program. 照明フェーズ中に、データラインに後続のプログラムされた電流源が送られ、全てのピクセルの次のローをロードして、 前のローのピクセルが照明フェーズの中で全フレーム時間動作している。 In the illumination phase, current source subsequent program to the data line is transmitted, to load the next row of all pixels, the pixels of the previous row is operating all the frame time in the illumination phase. このように、図2のピクセル構造は、2.5のラインを有する1つのNMOSトランジスタ及び3つのPMOSトランジスタのみを必要とする。 Thus, the pixel structure of FIG. 2 requires only one NMOS transistor and three PMOS transistors having a 2.5 line. (隣接のピクセルと共有されうるV DD電圧供給、セレクトライン、データライン電流ソース)。 (V DD voltage may be shared with an adjacent pixel supply, select lines, the data line current source). 代替として、図6は、図2のピクセル構造が、全てのPMOSトランジスタを有して実行される実施例を示し、それは、PMOS又はNMOSプロセスのみのどちらを使用しても経済的である。 Alternatively, FIG. 6, the pixel structure of FIG. 2 shows an embodiment implemented having all of the PMOS transistor, it is economical to use either only the PMOS or NMOS process. NMOSトランジスタN1は、PMOS P 3トランジスタ610で置換されている。 NMOS transistor N1 is substituted by PMOS P 3 transistor 610. しかし、追加のライン(制御ライン) 620はトランジスタ610のゲートに結合され、追加のPMOSトランジスタをアドレッシングし、もって合計3.5のライン(即ち追加のPMOSゲートを制御するための追加の電圧供給)を必要とする。 However, additional line (control line) 620 is coupled to the gate of transistor 610, the additional PMOS transistor addressing the, with a total of 3.5 lines (i.e. adding additional for controlling the PMOS gate of the voltage supply) It requires. 要するに、図2及び図6のピクセル構造は、トランジスタ260のV SG上での自調整/トラッキング機構によって、またOLED290を通して一定の電流源を供給することによって、ポリシリコンTFT及びOLEDの両方の閾値変化を補うためように設計されている。 In short, the pixel structure of FIG. 2 and FIG. 6, the self-adjusting / tracking mechanism on V SG of the transistor 260, and by supplying a constant current source through OLED290, the threshold changes in both of the polysilicon TFT and OLED It is designed to make up for the. 実際、図2及び図6のピクセル構造は、ロード及び照明フェーズの両方の最中に高電圧供給を有する適当な動作を達成することができる。 In fact, the pixel structure of FIG. 2 and FIG. 6, it is possible to achieve a proper operation with a high voltage supply during both the load and the illumination phase. これらのピクセル構造は、OLED又はピクセルポリシリコンTFT の両方での不安定にもかかわらず、良好なグレースケール均一性及び高いライフタイムを有する高品質のOLEDディスプレイを設計するために実行されることができる。 These pixel structures, despite instability in both OLED or pixels polysilicon TFT, be performed in order to design a high-quality OLED display having a good gray scale uniformity and high lifetime it can. 図3は、本アクティブマトリックスピクセル構造の代替の実施形態を示す。 Figure 3 shows an alternative embodiment of the present active matrix pixel structure. 代替の実施形態において、データライン電圧は、ピクセル構造内で電流に変換され、図2及び図6で上述した電流源の実施のような電圧電流変換器を必要としない。 In an alternative embodiment, the data line voltage is converted into current in the pixel structure, does not require a voltage-current converter, such as in the current source described above in FIGS. 2 and 6. 図3について述べる。 It described FIG. ピクセル構造300は、4つのPMOSトランジスタ( 360、365、370、375)、2つのコンデンサ350及び355及びL ED(OLED)380を含む。 Pixel structure 300 includes four PMOS transistors (360,365,370,375) includes two capacitors 350 and 355 and L ED (OLED) 380. セレクトライン320は、トランジスタ360 のゲートに結合している。 Select line 320 is coupled to the gate of the transistor 360. データライン310はトランジスタ360のソースに結合され、+V DDラインはトランジスタ365のソース及びコンデンサ355の1つのターミナルに結合されている。 Data line 310 is coupled to the source of transistor 360, + V DD line is coupled to one terminal of the source and the capacitor 355 of the transistor 365. オートゼロライン330はトランジスタ3 70のゲートに結合され、照明ラインはトランジスタ375のゲートに結合されている。 Auto zero line 330 is coupled to the gate of transistor 3 70, the illumination line is coupled to the gate of the transistor 375. OLED280の1つの電極は、トランジスタ375のドレインに結合されている。 One electrode of OLED280 is coupled to the drain of the transistor 375. トランジスタ375のソースは、トランジスタ365及び37 0のドレインに結合されている。 The source of the transistor 375 is coupled to the drain of transistor 365 and 37 0. トランジスタ360のドレインは、コンデンサ350の1つのターミナルに結合されている。 The drain of the transistor 360 is coupled to one terminal of the capacitor 350. 最後に、トランジスタ365のゲート、トランジスタ370のソース、コンデンサ350の1つのターミナル及びコンデンサ355の1つのターミナルは、全て結合されている。 Finally, the gate of the transistor 365, the source of the transistor 370, one terminal of one terminal and the capacitor 355 of the capacitor 350, are all coupled. より詳細には、図3は3つのフェーズの中で動作されるピクセル構造300を示す。 More particularly, Figure 3 shows the pixel structure 300 to be operated in three phases. 即ち、1)オートゼロフェーズ、2)ロードデータフェーズ、3)照明フェーズである。 That is, 1) autozero phase, 2) loading data phase, 3) a lighting phase. オートゼロ オートゼロライン330及び照明ライン340が「ロー」にセットされると、 トランジスタP2(375)及びP3(370)は、「オン」に変わり、トランジスタP1(365)のドレイン側の電圧は、ゲートに送られ、一時的にダイオードに連結される。 When the auto-zero auto zero line 330 and the illumination line 340 is set to "low", the transistor P2 (375) and P3 (370) is changed to "on", the voltage at the drain side of the transistor P1 (365), the gate sent are temporarily coupled to the diode. データライン310は「基準電圧」にセットされ、セレクトライン320は「ロー」にセットされる。 Data line 310 is set to "reference voltage", the select line 320 is set to "low". 基準電圧は任意にセットされることができるが、それは最高データ電圧より大きくなくてはならない。 Reference voltage can be arbitrarily set, it must be greater than the maximum data voltage. 次に、照明ライン340は「ハイ」にセットされ、トランジスタP2 375 が「オフ」にされる。 Then, the lighting line 340 is set to "high", the transistor P2 375 is set to "off". ピクセル回路は、今、トランジスタP1 365(駆動トランジスタ)の閾値に定まり、もってデータラインの基準電圧とコンデンサC C Pixel circuit is now Sadamari the threshold of the transistor P1 365 (driving transistor), a reference voltage with the data line and the capacitor C C 350のトランジスタP1 365の閾値電圧との間の差異である電圧(オートゼロ電圧)を記憶する。 Storing voltage (auto-zero voltage) is the difference between the threshold voltage of the transistor P1 365 350. これによって、ゲート電圧、又はより正確にはトランジスタ365のV SGをトランジスタ365の閾値電圧にセットする。 Thus, the gate voltage, or more precisely sets the V SG of the transistor 365 to the threshold voltage of the transistor 365. これは、次に、トランジスタP1(365)上に、閾値電圧変化に関係なく固定オーバドライブ電圧を提供する。 This, in turn, over the transistor P1 (365), to provide a fixed overdrive voltage regardless threshold voltage variation. 最後に、オートゼロライン330は「ハイ」にセットされ、 トランジスタP1 365のゲートを絶縁する。 Finally, auto-zero line 330 is set to "high", to insulate the gate of the transistor P1 365. オートゼロの目的は、これから達成される。 The purpose of the auto-zero, will now be achieved. ロードデータフェーズ オートゼロフェーズの終わりに、セレクトラインは「ロー」にセットされ、データラインは「基準電圧」であった。 At the end of the load data phase auto-zero phase, select line is set to "low", the data line was "reference voltage". 今、データライン310は、データ電圧にセットされる。 Now, the data line 310 is set to the data voltage. データ電圧は、トランジスタP1(365)のゲート上にコンデンサC C 350を通して送られる。 Data voltage is transmitted through the capacitor C C 350 on the gate of the transistor P1 (365). 次に、セレクトラインは、「ハイ」にセットされる。 Next, select line is set to "high". このように、トランジスタ365のV SGは、一定の電流レベルを提供するために、トランジスタ365に固定オーバドライブ電圧を提供する。 Thus, V SG of the transistor 365, in order to provide a constant current level, providing a fixed overdrive voltage to the transistor 365. これはロードデータフェーズを終了し、ピクセルは照明用となる。 This finished loading the data phase, the pixel becomes lighting. デセレクト(deselect、選択から外す)ローフェーズ中の連続照明データフェーズ データ電圧がトランジスタP1(365)のゲート上で記憶されると、照明ライン340が「ロー」にセットされ、トランジスタP2 375が「オン」にされる。 Deselect (deselect, deselected) the continuous illumination data phase data voltage during a low phase is stored on the gate of the transistor P1 (365), illumination line 340 is set to "low", the transistor P2 375 is "on It is in. " トランジスタP1 365によって供給される電流は、OLED380を通して流れることができるようになる。 The current supplied by transistor P1 365 will be able to flow through OLED380. 要するに、トランジスタ365は一定の電流源のように機能する。 In short, the transistor 365 functions as a constant current source. これで照明フェーズが完了する。 This lighting phase is completed. 図4に、本アクティブマトリックスピクセル構造の代替の他の実施形態を示す。 Figure 4 shows an alternative further embodiment of the present active matrix pixel structure. 代替の実施形態において、データライン電圧はまた、ピクセル構造の内で電流に変換され、電流源の図2及び6で上述したように、電流源での実施のような電圧電流変換器を必要としない。 In an alternative embodiment, the data line voltage also is converted into a current within the pixel structure, as described above in FIG. 2 and 6 of the current source, requires a voltage-current converter, such as in the current source do not do. 図4について述べる。 Figure 4 will be described. ピクセル構造400は、3つのPMOSトランジスタ( 445、460、465)、2つのコンデンサ450及び455及びLED(O LED)470を含む。 Pixel structure 400 comprises three PMOS transistors (445,460,465) includes two capacitors 450 and 455 and LED (O LED) 470. セレクトライン420は、トランジスタ445のゲートに結合している。 Select line 420 is coupled to the gate of the transistor 445. データライン410はトランジスタ445のソースに結合され、VSWPラインはトランジスタ460のソース、コンデンサ455の1つのターミナルに結合される。 Data line 410 is coupled to the source of transistor 445, VSWP line source of transistor 460 is coupled to one terminal of the capacitor 455. オートゼロライン430は、トランジスタ465のゲートに結合されている。 Auto zero line 430 is coupled to the gate of the transistor 465. OLED470の1つの電極は、トランジスタ465及び460のドレインに結合されている。 One electrode of OLED470 is coupled to the drain of transistor 465 and 460. トランジスタ445のドレインは、コンデンサ450の1つのターミナルに結合されている。 The drain of the transistor 445 is coupled to one terminal of the capacitor 450. 最後に、トランジスタ4 60のゲート、トランジスタ465のソース、コンデンサ450の1つのターミナル及びコンデンサ455の1つのターミナルは、全て結合されている。 Finally, the gate of the transistor 4 60, the source of the transistor 465, one terminal of one terminal and the capacitor 455 of the capacitor 450, are all coupled. より詳細に、図4は、3つのフェーズの中で動作されるピクセル構造400を示す。 More specifically, FIG. 4 shows the pixel structure 400 is operated in three phases. 即ち、1)オートゼロフェーズ、2)ロードデータフェーズ、3)照明フェーズである。 That is, 1) autozero phase, 2) loading data phase, 3) a lighting phase. オートゼロ(VSWPによる)フェーズ VSWP(供給を切り換える電圧)は「ローワ(より低い、lower)電圧」に量「ΔV」だけセットされる。 Autozero (by VSWP) Phase VSWP (voltage for switching the supply) is "Rowa (lower, lower) voltage" to be set by an amount "ΔV". ここで、ローワ電圧は、OLED470が少量の電流(例えば、ナノアンプのオーダで、OLED特性に依存して)を少しずつ流すように選択される。 Here, Rowa voltage, OLED470 small amount of current (e.g., on the order of nanoamps, depending on the OLED characteristic) to be selected to flow little by little. ローワ電圧は、コンデンサに結合されたC C (450)とトランジスタP4(445)との間の浮動ノード(fによるダイリューションなしでトランジスタP1(460)V G(P1)のゲートを通して結合される。オートゼロライン430は、次に「ロー」セットされる。トランジスタP1(460) (駆動トランジスタ)は、トランジスタP3(465)を閉じることによってダイオードとして一時的に連結される。セレクトライン420は次に「ロー」にセットされ、「基準電圧」はデータライン410に適用される。基準電圧は任意にセットされることができる、しかし、最高データ電圧より大きくなくてはならない。ピクセル回路は、今、トランジスタP1 460の閾値に定まることができる。最後に、オートゼロライン430は次に Rowa voltage is coupled through the gate of the floating node (without dilution by f transistors P1 (460) V G (P1) between coupled to the capacitor C C and (450) transistors P4 and (445) . autozero line 430 is then "low" setting. transistor P1 (460) (drive transistor), the transistor P3. is temporarily connected as a diode by closing (465) the select line 420 then is is set to "low", "reference voltage". the reference voltage applied to the data line 410 can be the to be arbitrarily set, but, must be greater than the maximum data voltage. pixel circuit will now in. Finally can determined the threshold of the transistor P1 460, the auto zero line 430 then is ハイ」にセットされ、トランジスタP1 460のゲートを絶縁する。オートゼロフェーズの効果は、記憶装置にコンデンサC C 450に電圧(オートゼロ電圧)を記憶することであり、それはデータライン上基準電圧とP1 460のトランジスタ閾値電圧との間での差異を表す。これはオートゼロフェーズを完了する。 ロードデータフェーズ オートゼロのフェーズの終わりで、セレクトラインは「ロー」にセットされ、 データラインは「基準電圧」であった。次に、データラインは、基準電圧から、 データにおける変化がデータに参照されるローワ電圧(データ電圧)まで切り換えられる。順番に、データ電圧(データ入力)はロードされてコンデンサ450 及び455を通してトランジスタP1 460のゲートに結合される。トラン Set high ", insulates the gate of the transistor P1 460. Effect of autozero phase is to store a voltage (auto-zero voltage) to the capacitor C C 450 in the storage device, it and the data line on the reference voltage P1 460 represent a difference between the transistor threshold voltage. This is the end phase of the autozero phase to complete. Loading data phase auto-zero, the select line is set to "low", the data line is met "reference voltage" was. then, the data lines, the reference voltage, the change in the data is switched to Rowa voltage referenced to the data (data voltage). in order, through the data voltage (data input) is loaded capacitors 450 and 455 It is coupled to the gate of the transistor P1 460. Trang スタ460の電圧V SGは、トランジスタP1(460)に、固定オーバドライブ電圧を提供し、OLED470電流を駆動する。即ち、データ電圧は、トランジスタP1 460の上でオーバドライブ電圧に変換される。コンデンサ450上で記憶される電圧が、トランジスタP1 460の閾値電圧の原因であるので、 オーバドライブ電圧全体が、今、トランジスタP1の閾値電圧と独立である。セレクトライン420は、次に「ハイ」にセットされる。これはロードデータフェーズを完了する。 デセレクトローフェーズ中に連続的に、データを照明する データロードフェーズの完了で、トランジスタP1 460のゲートが、今、 容量結合を除いて絶縁され、OLEDを駆動するためのオーバドライブ電圧がコンデンサC S 455に記憶 Voltage V SG of the static 460, the transistor P1 (460), providing a fixed overdrive voltage, to drive the OLED470 current. That is, the data voltage is converted into overdrive voltage over the transistor P1 460. Capacitor voltage stored on 450, since it is responsible for the threshold voltage of the transistor P1 460, the entire overdrive voltage now is independent of the threshold voltage of the transistor P1. select line 420, then the "high" is set. This completes the loading data phase. continuously during the deselect low phase, at the completion of the data loading phase to illuminate the data, the gate of the transistor P1 460 is now insulated except capacitive coupling , overdrive voltage for driving the OLED is stored in the capacitor C S 455 れる。 It is. 次に、VSWPは最初のハイア(より高い、h igher)電圧(照明電圧)に戻される。 Then, VSWP first Heyer (higher, h igher) is returned to the voltage (lighting voltage). 続いてVSWPが上がり、今、照明のためにOLEDを駆動する十分な電圧が存在する。 Subsequently VSWP rises, now sufficient voltage to drive the OLED for illumination is present. 即ち、セレクトライン420が「ハイ」にセットされると、トランジスタP3(465)及びP4(445)の両方は「オフ」に変えられ、データ電圧は以前のようにトランジスタ460のV SGの上に記憶されたままである。 That is, when the select line 420 is set to "high", both transistors P3 (465) and P4 (445) is changed to "off", the data voltage as before on the V SG of the transistor 460 remain stored. ソースからゲートへの電圧V SG(P1)は同様に全体の照明フェーズを通して維持され、それはOLEDを通しての電流レベルが一定のことを意味する。 Voltage V SG of the source to the gate (P1) is maintained through the illumination phase of the whole as well, it is the current level through the OLED means that constant. これで照明サイクルを完了する。 This completes the lighting cycle. 要するに、図3は、4つのPMOSトランジスタ及び3と1/2ラインを有する1つの結合コンデンサを使用するピクセル構造を開示する。 In short, Figure 3 discloses a pixel structure using a single coupling capacitor having four PMOS transistors and 3 1/2 line. (オートゼロライン及びVDDH電圧供給は、両方とも共有されることができる)。 (Autozero line and VDDH voltage supply, both can be shared). 図4は、3つのPMOSトランジスタ及び2と1/2ラインを有する1つの結合コンデンサだけを使用したピクセル構造を開示する。 Figure 4 discloses a pixel structure using only one coupling capacitor having three PMOS transistors and 2 1/2 lines. (電源を切り換えるVSWPは、隣接のピクセルと共用する)これらの2つのピクセル構造の両方を照明、及びV SG(P1) (VSWP for switching the power supply, shared with adjacent pixels) illuminating both of these two pixel structure, and V SG (P1) 上のオートゼロとリクエストリング電流機構によって、ポリシリコンTFT及びOLEDの閾値変化を補うことができる前記の2つの(2)ピクセル構造も、ポリシリコンNMOSの中で及びアモルファスNMOS設計の中で実行されることができる。 The above auto-zero and the request ring current mechanism, two (2) pixel structure of the which can compensate for the threshold variation of the polysilicon TFT and OLED is also executed in the inside of the polysilicon NMOS and amorphous NMOS design be able to. 図3及び図4の2つの(2)ピクセル構造が、OLED又はピクセルポリシリコンTFTにおける不安定にもかかわらず、良好なグレースケール均一性及び長い寿命を有する高品質のOLEDを設計するために実行されることができる。 Two (2) pixel structure of FIG. 3 and FIG. 4, performed to design despite unstable even in an OLED or pixels polysilicon TFT, a high-quality OLED with good grayscale uniformity and long lifetime it is the can. 図7は、本発明のアクティブマトリックスLEDピクセル構造700の回路図を示す。 Figure 7 shows a circuit diagram of an active matrix LED pixel structure 700 of the present invention. 好ましい実施形態で、アクティブマトリックスLEDピクセル構造は、 薄膜トランジスタ(TFT)(例えばポリシリコン又はアモルファスシリコンを使用して製造されるトランジスタ)を使用して実行される。 In a preferred embodiment, the active matrix LED pixel structure is performed using a thin film transistor (TFT) (for example, polysilicon or amorphous silicon transistors are fabricated using). 同様に、好ましい実施形態で、アクティブマトリックスLEDピクセル構造は、有機発光ダイオード(OLED)を組み込んでいる。 Similarly, in a preferred embodiment, the active matrix LED pixel structure incorporates an organic light-emitting diode (OLED). 本ピクセル構造は薄膜トランジスタ及び有機発光ダイオードを使用して実行されるが、本発明がトランジスタ及び発光ダイオードの他のタイプを使用して実行されることができることは理解されなければならない。 This pixel structure is performed using the thin film transistor and organic light emitting diodes, it should be understood that that the present invention may be implemented using other types of transistors and light emitting diodes. 本ピクセル構造700は、大きな閾値電圧(V t )不均一性存在下で、均一な電流駆動を提供する。 The present pixel structure 700 is a non-uniformity presence large threshold voltage (V t), to provide a uniform current drive. 換言すると、OLEDsを通して均一な電流を維持することが望ましく、もってディスプレイ強度における均一性が確保される。 In other words, it is desirable to maintain a uniform current through the OLEDs, uniformity is ensured in the display intensity have. 図7について述べる。 Figure 7 will be described. ピクセル構造700は、2つのPMOSトランジスタ7 10及び720、コンデンサ730、レジスタ750及びLED(OLED)7 40(光部材)を含む。 Pixel structure 700 includes two PMOS transistors 7 10 and 720, a capacitor 730, registers 750 and LED (OLED) 7 40 (optical member). セレクトライン770は、トランジスタ710のゲートに結合されている。 Select line 770 is coupled to the gate of the transistor 710. データライン760は、トランジスタ710のソースに結合されている。 Data line 760 is coupled to the source of transistor 710. レジスタ750の1つのターミナルはトランジスタ720のソースに結合され、OLED740の1つの電極はトランジスタ720のドレインに結合されている。 One terminal of the register 750 is coupled to the source of transistor 720, one electrode of OLED740 is coupled to the drain of the transistor 720. 最後に、トランジスタ710のドレイン、トランジスタ720のゲート及びコンデンサ730の1つのターミナルは、全て結合されている。 Finally, the drain of the transistor 710, one terminal of the gate and the capacitor 730 of the transistor 720, are all coupled. より詳細には、ピクセル構造を含むローがアクティブローとして選択されるとき、セレクトライン770の論理的「ハイ」レベルは、トランジスタM1710 をオンにし、コンデンサC730がデータライン760から電圧Vgまで充電されることができるようになっている。 More specifically, when the row containing the pixel structure is selected as the active-low logic "high" level of the select line 770 turns on the transistor M1710, the capacitor C730 is charged from the data line 760 to the voltage Vg thereby making it possible. ローがセレクトライン770で「ロー」レベルによってデセレクトされた後、トランジスタM1をオフにし、コンデンサ7 30の電圧がフレーム時間のために記憶される。 After a row has been deselect the "low" level at the select line 770, to turn off the transistor M1, the voltage of the capacitor 7 30 are stored for the frame time. 電圧がトランジスタM2 72 0のゲートに現れるので、それは、電流を、トランジスタ720を通し、ドレインに位置するOLED740も通り抜けるようにセットする。 Since voltage appears at the gate of the transistor M2 72 0, it current, through the transistor 720, OLED740 also set to pass through is located in the drain. 更に重要なことは、レジスタ750が本ピクセル構造で実行されることである。 More importantly, the register 750 is to be executed in this pixel structure. レジスタは、トランジスタ720のソースに結合されて、マイナスのフィードバック部材として機能する。 Register is coupled to the source of transistor 720, which functions as a negative feedback element. 個々の駆動トランジスタが異常に低い閾値電圧を有するならば、トランジスタは、OLEDにより多くの電流を通過する傾向があるが、追加の電流は、レジスタ750を横切る追加の電圧低下を引き起こし、もって電流を低減する。 If individual drive transistors have an abnormally low threshold voltage, the transistor will tend to pass more current OLED, additional current causes a drop additional voltage across the register 750, a current with reduction to. 相補的な影響が、異常に高い閾値電圧を有する駆動トランジスタに起こる。 Complementary effects occurs driving transistor having an abnormally high threshold voltage. 全体の影響は、電流の不均一性を低減することである。 Overall impact is to reduce the nonuniformity of current. レジスタが、TFTで達成される閾値電圧均一性より非常に良好な抵抗均一性を有して一般に形成されることができることが判った。 Register, it has been found that can be generally formed with a very good resistance uniformity than the threshold voltage uniformity is achieved with TFT. 1つの理由はTFT閾値電圧がアクティブなシリコン材料のトラップ密度に非常に敏感であるのに、レジスタの中で使用されるドープされた層の抵抗はトラップ密度に対してそれほど敏感でないことである。 For one reason is very sensitive TFT threshold voltage to the trap density of the active silicon material, the resistance of the doped layers are used in the register is not less sensitive to trap density.測定値は、抵抗の百分率変化がポリシリコンディスプレイウェーハを横切って非常に小さいことを示し、抵抗が変わる範囲で、トランジスタ閾値と違って滑らかに変化することが予想される。 OLED740を通り抜ける電流は、輝度を決定する。しかし、TFTを使用してピクセルが実行されるとき、TFTの閾値電圧も、上述のようライフにわたって変化することができることが観察された。加えて、TFT閾値電圧の初期不均一性があるであろう。閾値がOLEDを通して確定される電流に関して、電圧は強い影響を有しないので、トランジスタ710に関するそのような不均一性が問題でない点に留意する必要がある。これに対して、駆動トランジスタ720の閾値電圧における変化は、OLEDを通して直接に電流に影響を及ぼす。より詳細には、電流、本ピクセル構造の中のOLEDを通り抜けるI OLDEは、 以下のように表されることができる K'はトランジスタM2の固有相互コンダクタンスパラメータ、W及びLはその幅及び長さ、V tは閾値電圧、Vgはデータラインからの電圧であり、レジスタR750は好ましい実施形態で1Mの値を有する。 K 'is intrinsic transconductance parameter, W and L are the width and length of the transistor M2, V t is the threshold voltage, Vg is the voltage from the data line, the register R750 has a value of 1M in the preferred embodiment. しかし、抵抗値は、駆動トランジスタ特性に従って、100K〜10Mであることができる。 However, the resistance value in accordance with the driving transistor characteristics can be 100K~10M. 本ピクセル構造が、電流変動を、以下で述べる本発明のレジスタなしで可能な変動の1/3に低減することができることが、観察された。 This pixel structure is a current variation, it can be reduced to 1/3 of the possible without registers of the present invention varies as described below, it was observed. より詳細には、トランジスタ720のソースに結合されたレジスタを備え、閾 More particularly, it comprises a register coupled to the source of transistor 720, the threshold 感度は、以下の通りである。 Sensitivity is as follows. 可能な限りゲート電圧Vgを増やすことは有益であるが、トランジスタ720 が飽和内にとどまらなければならないという限界を有する。 It is beneficial to increase the gate voltage Vg as possible, but has the limitation that the transistor 720 must remain within saturation. レジスタ(I OLDE R )を横切って電圧降下をもたらすことによって、閾値電圧変化への感度は、レジスタなしで達成可能なもの以下に低減されることができる。 By providing a voltage drop across the register (I OLDE R), sensitivity to the threshold voltage change can be reduced below that achievable without the register. 最終的に、項(I OL DE R)は(Vg-V t )よりも大きくなることができない。 Finally, Section (I OL DE R) can not be greater than the (Vg-V t). 理由は、そのような結果がトランジスタ720がオフにされたこと意味するからである。 Because, such a result is it means that the transistor 720 is turned off. 従って、トランジスタ720のソースの中でレジスタを置くことによって達成されることができる感度における最大の低減は、2のファクタである。 Therefore, the maximum reduction in sensitivity can be achieved by placing the register in the source of the transistor 720 is a factor of two. しかし、ソースの中にレジスタを置くことは、トランジスタ720の幅Wが増加することを認め、そのような増加は閾値電圧の標準偏差を低減する。 However, placing the register in the source is acknowledged that the width W of the transistor 720 increases, such increase reduces the standard deviation of the threshold voltage. 固定最大ゲート電圧、Wは増加されることができるので、σ Vt内の統計的低減からより多くの利益を引き出す。 Fixed maximum gate voltage, so W can is increased, draw more benefit from statistical reduction in the sigma Vt. このようにレジスタをトランジスタ720のソースに置くことによって、電流変動における低減は以下の(1)、(2)の影響の組合せ By placing this manner the registers to the source of the transistor 720, reduction in current fluctuations following (1), the combination of the effects of (2) 減(2×又は50%の低減である理論上の最大利益に制限)、及び、(2)閾値変化σ Vt自体の低減(幾何学的及びキャパシタンス制約を除いて限界がない)である。 (Limited to a maximum benefit of the theoretical is 2 × or 50% reduction) reduced, and a (2) reduction of the threshold variation sigma Vt itself (no limits except geometric and capacitance constraints). 図5は、本発明の複数のアクティブマトリックスLEDピクセル構造200、 300、400、600又は700を有するディスプレイ520を使ったシステム500のブロック図を示す。 Figure 5 is a plurality of active matrix LED pixel structure 200 of the present invention, it illustrates a block diagram of a system 500 using a display 520 having 300,400,600 or 700. システム500は、ディスプレイコントローラ5 10及びディスプレイ520を含む。 System 500 includes a display controller 5 10 and a display 520. より詳細には、ディスプレイコントローラは、汎用コンピュータとして実施されることができ、当該コンピュータは中央処理装置CPU512、メモリ514 及び複数のI/O装置416(例えば、マウス、キーボード、記憶装置、例えば磁気及び光学の駆動装置、モデムなどを有している。ディスプレイ520を起動させるソフトウェア命令は、メモリ514にロードされることができ、CPU5 12によって実行されることができる。 ディスプレイ520は、ピクセルインタフェース522及び複数のピクセル( ピクセル構造200、300、400、600又は700)を含む。ピクセルインタフェース522は、ピクセル200、300、400、600又は700を駆動するために必要な回路を含む。例えば、ピクセルインタフ More specifically, the display controller can be implemented as a general purpose computer, the computer includes a central processing unit CPU 512, a memory 514 and a plurality of I / O device 416 (e.g., a mouse, a keyboard, storage devices, for example magnetic and optical drive, and a like modem. software instructions to activate the display 520 may be loaded into memory 514, may be performed by CPU 5 12. display 520 pixels interfaces 522 and includes a plurality of pixels (pixel structure 200,300,400,600 or 700). pixel interface 522 includes circuitry necessary to drive the pixel 200,300,400,600 or 700. for example, the pixel in tough ェース522は図1で示したマトリックスアドレッシングインタフェースでありえる。 このように、システム500はラップトップコンピュータとして実行されることができる。代わりに、ディスプレイコントローラ510は、他の方法において実行することができ、それは、例えばマイクロコントローラ又はアプリケーション特定の集積回路(ASIC)、又はハードウェア及びソフトウェア命令の組合せである。要するに、システム500は、本発明のディスプレイを組み込んだより大きいシステム内で実行されることができる。 本発明はPMOSトランジスタを使用して記載したが、本発明がNMOSトランジスタを使用して実行されることができることは理解されなければならない。 なお、そこでは、関連した電圧は逆にされる。 Esu 522 can be a matrix addressing interface shown in FIG. Thus, the system 500 can be implemented as a laptop computer. Alternatively, the display controller 510 may be implemented in other ways, it is, for example a microcontroller or application specific integrated circuit (ASIC), or a combination of hardware and software instructions. in short, the system 500 can be performed within a larger system that incorporates a display of the present invention . the present invention has been described using PMOS transistors, it should be understood that that the present invention may be implemented using an NMOS transistor. Incidentally, where the relevant voltages are reversed. ち、OLEDは、今、NMOS 駆動トランジスタのソースに結合される。OLEDを裏返すので、OLEDのカソードは、透明な材料で作られなければならない。 本発明の教示内容を組み込んだ種々の実施形態を示して本明細書で詳細に記載したが、当業者は、容易にこれらの教示内容を組み込んだ多くの他の様々な実施形態を工夫することができる。 Chi, OLED, now, since turning the .OLED coupled to the source of the NMOS drive transistor, a cathode of an OLED, the various embodiments which incorporate the teachings of the must be made of transparent material. The present invention has been described in detail herein shown, those skilled in the art can devise easily many other varied embodiments that still incorporate these teachings.

───────────────────────────────────────────────────── フロントページの続き (31)優先権主張番号 09/064,697 (32)優先日 平成10年4月22日(1998.4.22) (33)優先権主張国 米国(US) (81)指定国 EP(AT,BE,CH,CY, DE,DK,ES,FI,FR,GB,GR,IE,I T,LU,MC,NL,PT,SE),JP,KR (72)発明者 スー,ジェイムズ,ヤ−コング アメリカ合衆国 ニュー ジャージー州 エディソン ハナ ロード 7107 (72)発明者 スー,フ−ラング アメリカ合衆国 ニュー ジャージー州 クランベリー キングレット ドライヴ サウス 14 (72)発明者 イプリ,アルフレッド,チャールズ アメリカ合衆国 ニュー ジャージー州 プリンストン コツウォルド レ ────────────────────────────────────────────────── ─── of the front page continued (31) priority claim No. 09 / 064,697 (32) priority date 1998 April 22 (1998.4.22) (33) priority country the United States (US) ( 81) designated States EP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, I T, LU, MC, NL, PT, SE), JP, KR (72) inventor Sue, James, ya - Kong United States New Jersey Edison Hana Road 7107 (72) inventor Sue, off - cranberry Lang United States of America New Jersey King Let DRIVE South 14 (72) inventor Ipuri, Alfred, Charles United States New Jersey state Princeton Kotsuworudo Les ン 7 (72)発明者 ステュワート,ロジャー,グリーン アメリカ合衆国 ニュー ジャージー州 ネシャニック ステーション スキー ド ライヴ 3 Down 7 (72) inventor Stewart, Roger, Green United States New Jersey Neshanikku station ski de live 3

Claims (1)

  1. 【特許請求の範囲】 1. [Claims] 1. 複数のピクセルを含むディスプレイ(520)であって、各ピクセル(20 0)が、 ゲート、ソース及びドレインを有する第1のトランジスタ(250)であって、該ゲートがセレクトライン(210)結合され、該ソースがデータライン(2 20)に結合された第1のトランジスタ(250)と、 ゲートソース及びドレインを有する第2のトランジスタ(270)であって、 該第2のトランジスタのゲートが前記セレクトラインに結合され、該第2のトランジスタのドレインがV DDライン(295)に結合され、該第2のトランジスタのソースが前記第1のトランジスタの前記ドレインに結合された第2のトランジスタ(270)と、 ゲート、ソース及びドレインを有する第3のトランジスタ(240)であって、前記第3のトランジ A display (520) including a plurality of pixels, each pixel (20 0), a gate, a first transistor having a source and a drain (250), said gate select line (210) is coupled, first transistors (250) to which the source is coupled to the data line (2 20), a second transistor having a gate source and drain (270), a gate of the second transistor is the select line coupled to the drain of the second transistor being coupled to V DD line (295), and a second transistor which transistor the source of the second is coupled to the drain of said first transistor (270) gate, a third transistor having a source and a drain (240), said third transient タのゲートが前記セレクトラインに結合された第3のトランジスタ(240)と、 第1のターミナル及び第2のターミナルを有するコンデンサ(280)であって、前記第3のトランジスタの前記ソースが前記コンデンサの前記第1のターミナルに結合され、前記コンデンサの前記第2のターミナルが前記第1のトランジスタの前記ドレインに結合されたコンデンサ(280)と、 ゲート、ソース及びドレインを有する第4のトランジスタ(260)であって、該第4のトランジスタのソースが前記第1のトランジスタの前記ドレインに結合され、該第4のトランジスタのゲートが、前記第3のトランジスタの前記ソースに結合された第4のトランジスタ(260)と、 2つのターミナルを有する照明(light)部材(290)であって、前 The three transistor (240) gate of data is coupled to said select line, a capacitor (280) having a first terminal and a second terminal, said source of said third transistor is a capacitor coupled to said first terminal, the fourth transistor (260 having a capacitor (280) coupled to the drain of said second terminal said first transistor of said capacitor, a gate, a source and a drain ) comprising the source of the transistor of the fourth is coupled to the drain of said first transistor, the fourth transistor gate of the fourth transistor is coupled to said source of said third transistor and (260), a lighting having two terminals (light) member (290), prior to 記第4 のトランジスタの前記ドレイン及び前記第3のトランジスタの前記ドレインが、 該照明部材の前記ターミナルのうちの1つに結合している照明部材(290)と、 を含むディスプレイ(520)。 Serial display the drain and the drain of the third transistor of the fourth transistor comprises an illumination member (290) attached to one of said terminals of said illumination member (520). 2. 2. 前記データラインに結合するための電流源(230)を更に含む請求項1記載のディスプレイ。 Further display of claim 1, further comprising a current source (230) for coupling to the data lines. 3. 3. 複数のピクセルを含むディスプレイ(520)であって、各ピクセル(60 0)が、 ゲート、ソース及びドレインを有する第1のトランジスタ(250)であって、該ゲートがセレクトライン(210)に結合され、該ソースがデータライン( 220)に結合された第1のトランジスタ(250)と、 ゲートソース及びドレインを有する第2のトランジスタ(610)であって、 該第2のトランジスタのゲートがコントロールライン(620)に結合され、該第2のトランジスタのソースがV DDライン(295)に結合され、該第2のトランジスタのドレインが前記第1のトランジスタの前記ドレインに結合された前第2のトランジスタ(610)と、 ゲート、ソース及びドレインを有する第3のトランジスタ(240)であって、該第 A display (520) including a plurality of pixels, each pixel (60 0), a gate, a first transistor having a source and a drain (250), the gate is coupled to a select line (210) first transistors (250) to which the source is coupled to a data line (220), a second transistor (610) having a gate source and drain, the gate of the second transistor is the control line ( coupled to 620), the source of the transistor of the second is coupled to V DD line (295), before the drain of the second transistor is coupled to said drain of said first transistor a second transistor ( and 610), a gate, a third transistor having a source and a drain (240), said のトランジスタのゲートが前記セレクトラインに結合された第3のトランジスタ(240)と、 第1のターミナル及び第2のターミナルを有するコンデンサ(280)であって、該第3のトランジスタのソースが前記コンデンサの前記第1のターミナルに結合され、前記コンデンサの前記第2のターミナルが前記第1のトランジスタの前記ドレインに結合された、コンデンサ(280)と、 ゲート、ソース及びドレインを有する第4のトランジスタ(260)であって、該第4のトランジスタのソースが前記第1のトランジスタの前記ドレインに結合され、該第4のトランジスタのゲートが前記第3のトランジスタの前記ソースに結合された第4のトランジスタ(260)と、 2つのターミナルを有する照明部材(290)であって、前 A third transistor having a gate of the transistor is coupled to said select line (240), a capacitor (280) having a first terminal and a second terminal, the source of the transistor of said third said capacitor coupled to said first terminal, said second terminal of said capacitor is coupled to the drain of said first transistor, a fourth transistor having a capacitor (280), a gate, a source and a drain ( a 260), the source of the transistor of the fourth is coupled to the drain of said first transistor, a fourth transistor having a gate of the fourth transistor is coupled to said source of said third transistor and (260), a lighting member having two terminals (290), prior to 第4のトランジスタのドレイン及び前記第3のトランジスタのドレインが前記照明部材の前記ターミナルのうちの1つに結合された照明部材(290)と、 を含むディスプレイ(520)。 Display drains and the third transistor of the fourth transistor comprises an illumination member (290) coupled to one of said terminals of said illumination member (520). 4. 4. 各ピクセルが照明部材へのエネルギの適用を制御する回路を含み、該回路が駆動トランジスタを含む複数のピクセルを有するディスプレイを照明する方法であって、 (a)データラインに電流を適用することによって前記ピクセルにデータをロードするステップと、 (b)前記データを駆動トランジスタに結合されたコンデンサに記憶するステップと、 (c)前記記憶データに従って前記照明部材を照明するステップと、 を含む方法。 It includes a circuit for controlling the application of energy of each pixel to the lighting member, a method of illuminating a display that the circuit has a plurality of pixels including a driving transistor, by applying a current to the (a) data line method comprising the steps of loading data into the pixels, and storing in the capacitor coupled to the driving transistor (b) the data, and a step of illuminating the illumination member according (c) the stored data. 5. 5. 前記電流が電流源によって提供される請求項4記載の方法。 The method of claim 4, wherein provided the current by the current source. 6. 6. 複数のピクセルを含むディスプレイ(520)であって、各ピクセル(30 0)が、 ゲート、ソース及びドレインを有する第1のトランジスタ(360)であって該ゲートがセレクトライン(320)に結合され、該ソースがデータライン(3 10)に結合された第1のトランジスタ(360)と、 第1のターミナル及び第2のターミナルを有する第1のコンデンサ(350) であって、該第1のトランジスタのドレインが前記第1のコンデンサの前記第1 のターミナルに結合された第1のコンデンサ(350)と、 ゲート、ソース及びドレインを有する第2のトランジスタ(365)であって、該第2のトランジスタのソースがV DDライン(390)に結合され、該第2のトランジスタのゲートが前記第1のコンデンサの前記第2のタ A display (520) including a plurality of pixels, each pixel (30 0), a gate, a first transistor (360) is a by the gate having a source and a drain is coupled to a select line (320), first transistors (360) to which the source is coupled to the data lines (3 10), a first capacitor having a first terminal and a second terminal (350), of the first transistor the first and the capacitor (350) having a drain coupled to said first terminal of said first capacitor, a gate, a second transistor having a source and a drain (365), of the second transistor source coupled to V DD line (390), said second capacitor of the gate of the second transistor is the first capacitor ーミナルに結合された第2のトランジスタ(365)と、 第1のターミナル及び第2のターミナルを有する第2のコンデンサ(355) であって、前記第2のトランジスタのゲートが該第2のコンデンサの該第1のターミナルに結合され、前記第2のトランジスタのソースが該第2のコンデンサの該第2のターミナルに結合された第2のコンデンサ(355)と、 ゲート、ソース及びドレインを有する第3のトランジスタ(370)であって、該第3のトランジスタのゲートがオートゼロライン(330)に結合され、該第3のトランジスタのソースが前記第2のトランジスタの前記ゲートに結合され、該第3のトランジスタのドレインが、前記第2のトランジスタのドレインに結合された第3のトランジスタ(370)と、 ゲート、ソー A second transistor (365) coupled to Minaru, a second capacitor having a first terminal and a second terminal (355), a gate of said second transistor of said second capacitor coupled to the first terminal, the third source of the second transistor having a second capacitor coupled to the second terminal of the second capacitor (355), a gate, a source and a drain a transistor (370), a gate of the third transistor is coupled to the auto zero line (330), the source of the transistor of the third is coupled to said gate of said second transistor, the third drain of the transistor, and the second of the third transistor coupled to the drain of the transistor (370), a gate, source ス及びドレインを有する第4のトランジスタ(375)であって、該第4のトランジスタのゲートが照明ライン(340)に結合され、該第4のトランジスタのソースが前記第3のトランジスタのドレインに結合された第4のトランジスタ(375)と、 2つのターミナルを有する照明部材(380)であって、前記第4のトランジスタの前記ドレインが該照明部材のターミナルのうちの1つに結合された照明部材(380)と、 を含むディスプレイ。 A fourth transistor (375) having a scan and a drain, a gate of the fourth transistor is coupled to the illumination line (340), coupled transistor source of the fourth to the drain of said third transistor a fourth transistor (375) that is, a lighting member having two terminals (380), the illumination member to which the drain of the fourth transistor is coupled to one of the terminals of the illumination member display, including the (380), the. 7. 7. 複数のピクセルを含むディスプレイ(520)であって、各ピクセル(40 0)が、 ゲート、ソース及びドレインを有する第1のトランジスタ(445)であって、前記ゲートがセレクトライン(420)に結合され、前記ソースがデータライン(410)に結合された第1のトランジスタ(445)と、 第1のターミナル及び第2のターミナルを有する第1のコンデンサ(450) であって、該第1のトランジスタのドレインが該第1のコンデンサの第1のターミナルに結合された第1のコンデンサ(450)と、 ゲート、ソース及びドレインを有する第2のトランジスタ(460)であって、該第2のトランジスタのソースがVSWPライン(440)に結合され、該第2のトランジスタのゲートが前記第1のコンデンサの前記第2 A display (520) including a plurality of pixels, each pixel (40 0), a gate, a first transistor having a source and a drain (445), wherein the gate is coupled to a select line (420) the source is first transistors (445) coupled to the data line (410), a first capacitor having a first terminal and a second terminal (450), of the first transistor a first capacitor having a drain coupled to the first terminal of the first capacitor (450), a gate, a second transistor having a source and a drain (460), the source of the second transistor There is coupled to the VSWP line (440), the second of the gate of the second transistor is a first capacitor ターミナルに結合された第2のトランジスタ(460)と、 第1のターミナル及び第2のターミナルを有する第2のコンデンサ(455) であって、該第2のトランジスタのゲートが該第2のコンデンサの第1のターミナルに結合され、該第2のトランジスタのソースが該第2のコンデンサの第2のターミナルに結合された第2のコンデンサ(455)と、 ゲート、ソース及びドレインを有する第3のトランジスタ(465)であって、該第3のトランジスタのゲートがオートゼロライン(430)に結合され、該第3のトランジスタのソースが前記第2のトランジスタのゲートに結合され、該第3のトランジスタのドレインが前記第2のトランジスタのドレインに結合された第3のトランジスタ(465)と、 2つのターミナルを有す A second transistor coupled to a terminal (460), a second capacitor having a first terminal and a second terminal (455), the second gate of the transistor of the second capacitor coupled to a first terminal, a third transistor having a second capacitor transistor source of the second is coupled to a second terminal of the second capacitor (455), a gate, a source and a drain (465) comprising a gate of the third transistor is coupled to the auto zero line (430), the source of the transistor of the third coupled to the gate of the second transistor, the drain of the third transistor Yusuke but a third transistor coupled to the drain of the second transistor (465), the two terminals 照明部材(470)であって、前記第2のトランジスタのドレインが該照明部材のターミナルのうちの1つに結合された照明部材( 470)と、 を含むディスプレイ。 An illumination member (470), a display including an, an illumination member (470) coupled to one of the second drain of the transistor of the illumination member terminal. 8. 8. 複数のピクセルを有するディスプレイを照明し、各ピクセルが照明部材へのエネルギの適用を制御するための回路を含み、前記回路が駆動トランジスタを含む複数のピクセルを有するディスプレイを照明する方法であって、 (a)データラインに基準電圧を適用することによって、駆動トランジスタのためのオートゼロの電圧を決定するステップと、 (b)前記基準電圧を前記データラインのデータ電圧に切り換えることによって、ピクセルの上のデータをローディングするステップと、 (c)駆動トランジスタに結合されたコンデンサに前記データを記憶するステップと、 (d)前記記憶データに従って前記照明部材を照明するステップと、 を含む方法。 Illuminating a display having a plurality of pixels, it includes a circuit for each pixel to control the application of energy to the lighting member, a method of illuminating a display that the circuit has a plurality of pixels including a driving transistor, by applying a reference voltage to the (a) data line, and determining the auto-zero voltage for the drive transistor, by switching the (b) the reference voltage to the data voltage of the data line, the pixel above the method comprising the steps of loading the data, and storing the data in the capacitor coupled to the (c) driving transistor, and a step of illuminating the illumination member according; (d) storing data. 9.2つのターミナルを有する照明部材を駆動する回路(300)であって、 ゲート、ソース及びドレインを有する第1のトランジスタ(360)であって、該ゲートはセレクトライン(320)を接続するためのものであり、該ソースはデータライン(310)を接続するためのものである第1のトランジスタ(3 60)と、 第1のターミナル及び第2のターミナルを有する第1のコンデンサ(350) であって、前記第1のトランジスタのドレインが該第1のコンデンサの第1のターミナルに結合された第1のコンデンサ(350)と、 ゲートソース及びドレインを有する第2のトランジスタ(365)であって、 該第2のトランジスタのソースがV DDライン(390)に結合され、該第2のトランジスタのゲートが前記第1のコン 9.2 one of a circuit for driving a lighting member having a terminal (300), a gate, a first transistor having a source and a drain (360), since the gate is to connect the select lines (320) it is of, the source is the first transistors (3 60) is used to connect the data line (310), a first capacitor having a first terminal and a second terminal (350) there are, a drain of the first transistor and the first capacitor coupled to a first terminal of the first capacitor (350), a second transistor having a gate source and drain (365) , the source of the transistor of the second is coupled to V DD line (390), the gate of the second transistor is a first con ンサの前記第2のターミナルに結合された第2のトランジスタ(365)と、 第1のターミナル及び第2のターミナルを有する第2のコンデンサ(355) であって、前記第2のトランジスタのゲートが該第2のコンデンサの第1のターミナルに結合され、前記第2のトランジスタのソースが該第2のコンデンサの第2のターミナルに結合された第2のコンデンサ(355)と、 ゲート、ソース及びドレインを有する第3のトランジスタ(370)であって、該第3のトランジスタの前記ゲートがオートゼロライン(330)結合されるためのものであり、該第3のトランジスタのソースは前記第2のトランジスタのゲートに結合され、該第3のトランジスタのドレインは前記第2のトランジスタの前記ドレインに結合されている第3の A second transistor coupled to the second terminal of the capacitors (365), a second capacitor having a first terminal and a second terminal (355), a gate of said second transistor coupled to a first terminal of the second capacitor, and said second capacitor source of the second transistor is coupled to a second terminal of the second capacitor (355), a gate, a source and a drain a third transistor having (370), provided for the gate of the third transistor is an auto zero line (330) coupling the transistor source said third of said second transistor coupled to the gate, the drain of the third transistor is a third which is coupled to the drain of said second transistor ランジスタ(370)と、 ゲート、ソース及びドレインを有する第4のトランジスタ(375)であって、該第4のトランジスタのゲートが照明ライン(340)に結合されるものであり、該第4のトランジスタのソースが前記第3のトランジスタのドレインに結合されており、該第4のトランジスタのドレインが照明部材に結合されるためのものである第4のトランジスタ(375)と、を含む回路(300)。 A transistor (370), a gate, a fourth transistor having a source and a drain (375), which gate of the fourth transistor is coupled to the illumination line (340), the fourth transistor the source is coupled to the drain of the third transistor, the circuit comprising a transistor (375) the fourth is for the drain of the fourth transistor is coupled to the illumination member, the (300) . 10. 10. ディスプレイコントローラ(510)と、 前記ディスプレイコントローラに結合されたディスプレイ(520)と、 を含むシステム(500)であって、 前記ディスプレイが複数のピクセルを含み、該ピクセル(300)が、 ゲート、ソース及びドレインを有する第1のトランジスタ(360)であって該ゲートがセレクトライン(320)に結合され、該ソースがデータライン(3 10)に結合された第1のトランジスタ(360)と、 第1のターミナル及び第2のターミナルを有する第1のコンデンサ(350) であって、前記第1のトランジスタのドレインが前記第1のコンデンサの第1のターミナルに結合された第1のコンデンサ(350)と、 ゲート、ソース及びドレインを有する第2のトランジスタ(365)であって、 A display controller (510), wherein the display controller coupled to the display (520), a system (500) including said display includes a plurality of pixels, the pixel (300), a gate, a source and a first transistor (360) is a by the gate coupled to the select line (320) having a drain, the source is a first transistor coupled to the data lines (3 10) (360), first a first capacitor having a terminal and a second terminal (350), a first capacitor drain of the first transistor is coupled to a first terminal of the first capacitor and (350), gate, a second transistor having a source and a drain (365), 第2のトランジスタのソースがV DDライン(390)に結合され、該第2のトランジスタのゲートが前記第1のコンデンサの前記第2のターミナルに結合された第2のトランジスタ(365)と、 第1のターミナル及び第2のターミナルを有する第2のコンデンサ(355) であって、前記第2のトランジスタのゲートが該第2のコンデンサの第1のターミナルに結合され、該第2のトランジスタのソースが該第2のコンデンサの第2 のターミナルに結合された第2のコンデンサ(355)と、 ゲート、ソース及びドレインを有する第3のトランジスタ(370)であって、該第3のトランジスタのゲートがオートゼロライン(330)を結合し、該第3のトランジスタのソースが前記第2のトランジスタのゲートに結合し、該第3 のト The source of the second transistor is coupled to V DD line (390), a second transistor having a gate of the second transistor is coupled to said second terminal of said first capacitor and (365), the a second capacitor having a first terminal and a second terminal (355), a source of the gate of the second transistor is coupled to a first terminal of the second capacitor, the second transistor and there second capacitor (355) coupled to the second terminal of the capacitor of the second gate, a third transistor having a source and a drain (370), a gate of the third transistor is combines the auto zero line (330), the source of the transistor of said third and coupled to the gate of the second transistor, the third DOO ンジスタのドレインが前記第2のトランジスタのドレインに結合されている第3のトランジスタ(370)と、 ゲート、ソース及びドレインを有する第4のトランジスタ(375)であって、該第4のトランジスタのゲートが照明ライン(340)に結合され、該第4のトランジスタのソースが前記第3のトランジスタのドレインに結合された第4のトランジスタ(375)と、 2つのターミナルを有する照明部材(380)であって、前記第4のトランジスタのドレインが、前記照明部材の前記ターミナルのうちの1つに結合された照明部材(380)と、 を含むシステム(500)。 A third transistor having a drain of Njisuta is coupled to the drain of the second transistor (370), a gate, a fourth transistor having a source and a drain (375), a gate of the fourth transistor There is coupled to the illumination line (340), a fourth transistor having a transistor source of the fourth is coupled to the drain of the third transistor (375), the illumination member (380) having two terminals met Te, the system drain of the fourth transistor comprises an illumination member (380) coupled to one of said terminals of said illumination member (500). 11. 11. 複数のピクセルを含むディスプレイ(520)であって、各ピクセル(7 00)が、 ゲート、ソース及びドレインを有する第1のトランジスタ(710)であって、該ゲートがセレクトライン(770)に結合され、該ソースがデータライン( 760)に結合された第1のトランジスタ(710)と、 ゲート、ソース及びドレインを有する第2のトランジスタ(720)であって、前記第1のトランジスタのドレインが該第2のトランジスタのゲートに結合された第2のトランジスタ(720)と、 2つのターミナルを有するレジスタ(750)であって、前記第2のトランジスタのソースが該レジスタのターミナルのうちの1つに結合されたレジスタ(7 50)と、 2つのターミナルを有する照明部材(740)であって、前記第2の A display (520) including a plurality of pixels, each pixel (7 00) is a gate, a first transistor having a source and a drain (710), the gate is coupled to a select line (770) first transistors (710) to which the source is coupled to a data line (760), a gate, a second transistor having a source and a drain (720), a drain of said first transistor said a second transistor coupled to the gate of the second transistor (720), a register having two terminals (750), coupled source of said second transistor to one of the registers of the terminal It has been a register (7 50), a lighting member having two terminals (740), the second トランジスタのドレインが該照明部材のターミナルのうちの1つに結合された照明部材( 740)と、を含むディスプレイ(520)。 Display drain of the transistor comprises an illumination member (740) coupled to one of the terminals of the illumination member (520).
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Cited By (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002149112A (en) * 1999-11-30 2002-05-24 Semiconductor Energy Lab Co Ltd Electronic device
JP2002517806A (en) * 1998-06-12 2002-06-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix electroluminescent display device
JP2002518691A (en) * 1998-06-12 2002-06-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix electroluminescent display device
JP2002351401A (en) * 2001-03-21 2002-12-06 Mitsubishi Electric Corp Self-light emission type display device
JP2003022049A (en) * 2001-07-09 2003-01-24 Seiko Epson Corp Circuit, driver circuit, organic electroluminescent display device, electro-optical device, electronic apparatus, method of controlling current supply to organic electroluminescent pixel and method for driving circuit
JP2003202834A (en) * 2001-10-24 2003-07-18 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method therefor
JP2004503794A (en) * 1998-09-03 2004-02-05 サーノフ コーポレイション Dual-mode display for line scan circuit
WO2004047064A1 (en) * 2002-11-20 2004-06-03 Toshiba Matsushita Display Technology Co., Ltd. Organic el display and active matrix substrate
WO2004061809A1 (en) * 2002-12-27 2004-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, light-emitting display apparatus, and method for driving them
JP2004233960A (en) * 2002-12-05 2004-08-19 Sharp Corp Display device
JP2004295131A (en) * 2003-03-04 2004-10-21 Frank Robert Libsch Drive circuit for display device
WO2004102518A1 (en) * 2003-05-16 2004-11-25 Toshiba Matsushita Display Technology Co., Ltd. Active matrix type display apparatus
WO2004102517A1 (en) * 2003-05-16 2004-11-25 Toshiba Matsushita Display Technology Co., Ltd. Active matrix type display apparatus
JP2004341352A (en) * 2003-05-16 2004-12-02 Toshiba Matsushita Display Technology Co Ltd Active matrix type display device
WO2004109639A1 (en) * 2003-06-04 2004-12-16 Sony Corporation Pixel circuit, display device, and method for driving pixel circuit
JP2004361518A (en) * 2003-06-02 2004-12-24 Sony Corp Pixel circuit, display device, and drive method of pixel circuit
JP2005070761A (en) * 2003-08-07 2005-03-17 Canon Inc Image display device and manufacturing method thereof
JP2005099773A (en) * 2003-08-29 2005-04-14 Seiko Epson Corp Driving method of electronic circuit, electronic circuit, electronic device, electrooptical device, electronic equipment and driving method of electronic device
WO2005045797A1 (en) * 2003-11-10 2005-05-19 Sony Corporation Pixel circuit, display apparatus, and method for driving pixel circuit
JP2005202255A (en) * 2004-01-19 2005-07-28 Sony Corp Display device and its driving method
JP2005227562A (en) * 2004-02-13 2005-08-25 Sony Corp Pixel circuit and display device
JP2005257878A (en) * 2004-03-10 2005-09-22 Sharp Corp Display device
JP2005300700A (en) * 2004-04-08 2005-10-27 Sony Corp Display device and driving method therefor
US6963336B2 (en) 2001-10-31 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
WO2005106834A1 (en) * 2004-04-30 2005-11-10 Fuji Photo Film Co., Ltd. Active-matrix display
WO2005114629A1 (en) * 2004-05-20 2005-12-01 Kyocera Corporation Image display device and driving method thereof
JP2005538403A (en) * 2002-09-05 2005-12-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィKoninklijke Philips Electronics N.V. Electroluminescent display device
JP2006017968A (en) * 2004-06-30 2006-01-19 Eastman Kodak Co Active matrix type display device
JP2006072377A (en) * 2005-09-16 2006-03-16 Seiko Epson Corp Circuit, device, and electronic equipment
JP2006106730A (en) * 2005-09-16 2006-04-20 Seiko Epson Corp Device, driving method of device, and electronic equipment
JP2006119180A (en) * 2004-10-19 2006-05-11 Seiko Epson Corp Electro-optic device, driving method therefor, and electronic equipment
US7049991B2 (en) 2002-12-10 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, digital-analog converter and display device thereof
JP2006208966A (en) * 2005-01-31 2006-08-10 Pioneer Electronic Corp Display device and driving method thereof
JP2006215296A (en) * 2005-02-04 2006-08-17 Sony Corp Display device and pixel driving method
US7098705B2 (en) 2002-10-03 2006-08-29 Seiko Epson Corporation Electronic circuit, method of driving electronic circuit, electronic device, electro-optical device, method of driving electro-optical device, and electronic apparatus
WO2006090560A1 (en) * 2005-02-25 2006-08-31 Kyocera Corporation Image display device
JP2006251632A (en) * 2005-03-14 2006-09-21 Sony Corp Pixel circuit and display device
WO2006103802A1 (en) * 2005-03-25 2006-10-05 Sharp Kabushiki Kaisha Display device and method for driving same
JP2006293217A (en) * 2005-04-14 2006-10-26 Seiko Epson Corp Unit circuit and control method therefor, electronic device, electrooptical device and electronic equipment
JP2006301161A (en) * 2005-04-19 2006-11-02 Seiko Epson Corp Electronic circuit, its driving method, electrooptical apparatus, and electronic equipment
US7138967B2 (en) 2001-09-21 2006-11-21 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US7170479B2 (en) 2002-05-17 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US7173584B2 (en) 1998-03-18 2007-02-06 Seiko Epson Corporation Transistor circuit, display panel and electronic apparatus
US7180479B2 (en) 2001-10-30 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit and light emitting device and driving method therefor
US7184034B2 (en) 2002-05-17 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US7193619B2 (en) 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
JP2007122072A (en) * 2001-10-24 2007-05-17 Semiconductor Energy Lab Co Ltd Display device
US7253665B2 (en) 2003-02-28 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2008003623A (en) * 2007-08-10 2008-01-10 Hitachi Ltd Display device
JP2008015081A (en) * 2006-07-04 2008-01-24 Seiko Epson Corp Display device and display system using the same
US7324101B2 (en) 2002-08-30 2008-01-29 Seiko Epson Corporation Electronic circuit, method of driving electronic circuit, electro-optical device, method of driving electro-optical device, and electronic apparatus
US7339562B2 (en) 2004-04-12 2008-03-04 Sanyo Electric Co., Ltd. Organic electroluminescence pixel circuit
US7342560B2 (en) 2004-04-01 2008-03-11 Canon Kabushiki Kaisha Voltage current conversion device and light emitting device
US7345657B2 (en) 2002-12-27 2008-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device utilizing the same
US7348942B2 (en) 2003-02-19 2008-03-25 Seiko Epson Corporation Electro-optical device, method of driving electro-optical device, and electronic apparatus
JP2008077110A (en) * 2004-02-12 2008-04-03 Canon Inc Drive circuit and image forming apparatus using same
US7355571B2 (en) 2002-06-07 2008-04-08 Casio Computer Co., Ltd. Display device and its driving method
US7365715B2 (en) 2002-12-27 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit, electronic device and personal computer
US7378882B2 (en) 2003-04-25 2008-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a pixel having current-driven light emitting element
US7397449B2 (en) 2003-11-21 2008-07-08 Seiko Epson Corporation Current generation circuit, method of driving current generation circuit, electro-optical device, and electronic device
JP2008165247A (en) * 2002-04-26 2008-07-17 Toshiba Matsushita Display Technology Co Ltd El display device
US7408533B2 (en) 2004-06-29 2008-08-05 Samsung Sdi Co., Ltd. Light emitting display and driving method thereof
WO2008093792A1 (en) * 2007-02-01 2008-08-07 Kyocera Corporation Image display device and method for driving image display device
JP2008530599A (en) * 2005-02-10 2008-08-07 イグニス・イノベイション・インコーポレーテッドIgnis Innovation Incorporated A current programming organic light emitting diode drive circuit for a display
US7420530B2 (en) 2005-05-12 2008-09-02 Sony Corporation Pixel circuit, display device method for controlling pixel circuit
US7443367B2 (en) 2004-09-01 2008-10-28 Sharp Kabushiki Kaisha Display device and method for driving the same
US7453427B2 (en) 2003-05-09 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2008286963A (en) * 2007-05-17 2008-11-27 Sony Corp Display device and method for driving display device
US7463223B2 (en) 2003-05-14 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009003403A (en) * 2007-06-22 2009-01-08 Samsung Sdi Co Ltd Organic electroluminescent display and method of manufacturing same
JP2009048202A (en) * 2008-09-16 2009-03-05 Hitachi Ltd Image display device
CN100468501C (en) 2003-08-15 2009-03-11 株式会社半导体能源研究所 Semiconductor device
US7511687B2 (en) 2002-05-17 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic apparatus and navigation system
US7511708B2 (en) 2004-08-05 2009-03-31 Sharp Kabushiki Kaisha Display device and driving method thereof
CN100481180C (en) 2004-05-20 2009-04-22 京瓷株式会社 Image display device and driving method thereof
US7528812B2 (en) 2001-09-07 2009-05-05 Panasonic Corporation EL display apparatus, driving circuit of EL display apparatus, and image display apparatus
US7532209B2 (en) 2002-05-17 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and driving method thereof
US7545353B2 (en) 2001-03-22 2009-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
WO2009075129A1 (en) 2007-12-11 2009-06-18 Sharp Kabushiki Kaisha Display device and its manufacturing method
US7554362B2 (en) 2004-06-25 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method thereof and electronic device
CN100514402C (en) 2004-05-21 2009-07-15 株式会社半导体能源研究所 Semiconductor device, display device and electronic device
US7566902B2 (en) 2003-05-16 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
US7576734B2 (en) 2001-10-30 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit, light emitting device, and method for driving the same
WO2010016316A1 (en) * 2008-08-07 2010-02-11 シャープ株式会社 Display apparatus and method of driving the same
JP2010055116A (en) * 2002-08-30 2010-03-11 Seiko Epson Corp Electro-optical device, and electronic equipment
US7777698B2 (en) 2002-04-26 2010-08-17 Toshiba Matsushita Display Technology, Co., Ltd. Drive method of EL display panel
US7817149B2 (en) 2002-04-26 2010-10-19 Toshiba Matsushita Display Technology Co., Ltd. Semiconductor circuits for driving current-driven display and display
JP2010244067A (en) * 2001-10-24 2010-10-28 Semiconductor Energy Lab Co Ltd Semiconductor device, display and electronic apparatus
US7825877B2 (en) 2005-10-18 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Display device
US7825880B2 (en) 2006-08-23 2010-11-02 Sony Corporation Pixel circuit
US7852330B2 (en) 2003-06-06 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011044200A1 (en) 2009-10-08 2011-04-14 Global Oled Technology Llc Pixel circuit and display device
US7961160B2 (en) 2003-07-31 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device
US8035626B2 (en) 2002-11-29 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Current driving circuit and display device using the current driving circuit
US8054250B2 (en) 2006-08-08 2011-11-08 Samsung Mobile Display Co., Ltd Pixel, organic light emitting display, and driving method thereof
US8059116B2 (en) 2005-07-20 2011-11-15 Pioneer Corporation Active matrix display device
JP2012068653A (en) * 2001-10-30 2012-04-05 Semiconductor Energy Lab Co Ltd Pixel circuit of organic electroluminescent display device and driving method therefor
JP2012078850A (en) * 2011-11-28 2012-04-19 Seiko Epson Corp Display device and control method of display device
US8169385B2 (en) 2007-06-15 2012-05-01 Panasonic Corporation Image display device
US8289235B2 (en) 2005-10-19 2012-10-16 Sanyo Electric Co., Ltd. Display apparatus with gate electrodes formed in a projecting manner
US8305305B2 (en) 2007-07-19 2012-11-06 Panasonic Corporation Image display device
US8305306B2 (en) 2001-10-26 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
US8350785B2 (en) 2003-09-12 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US8378930B2 (en) 2004-05-28 2013-02-19 Sony Corporation Pixel circuit and display device having symmetric pixel circuits and shared voltage lines
US8378939B2 (en) 2003-07-11 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8400374B2 (en) 2005-12-02 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8432338B2 (en) 2007-06-15 2013-04-30 Panasonic Corporation Image display device having a plurality of pixel circuits using current-driven type light-emitting elements
US8487841B2 (en) 2001-10-30 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8537182B2 (en) 2008-02-08 2013-09-17 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
JP2014002417A (en) * 2013-09-24 2014-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device, display device, display module and electronic apparatus
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8659529B2 (en) 2003-01-17 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device
US8674910B2 (en) 2007-06-05 2014-03-18 Sony Corporation Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
JP2014081422A (en) * 2012-10-15 2014-05-08 Japan Display Inc Display device
US8736525B2 (en) 2009-04-13 2014-05-27 Global Oled Technology Llc Display device using capacitor coupled light emission control transistors for mobility correction
JP2014176970A (en) * 2013-03-13 2014-09-25 Canon Inc Light emitting apparatus and printer
US8890149B2 (en) 1999-11-30 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Electro-luminescence display device
USRE45291E1 (en) 2004-06-29 2014-12-16 Ignis Innovation Inc. Voltage-programming scheme for current-driven AMOLED displays
US8922466B2 (en) 2007-06-05 2014-12-30 Sony Corporation Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US8941697B2 (en) 2003-09-23 2015-01-27 Ignis Innovation Inc. Circuit and method for driving an array of light emitting pixels
JP2015018258A (en) * 2002-05-17 2015-01-29 株式会社半導体エネルギー研究所 Display device
KR101493086B1 (en) * 2008-05-16 2015-02-13 엘지디스플레이 주식회사 Organic electro-luminescence display device and manufacturing method thereof
US8994617B2 (en) 2010-03-17 2015-03-31 Ignis Innovation Inc. Lifetime uniformity parameter extraction methods
US8994625B2 (en) 2004-12-15 2015-03-31 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
JP2015099373A (en) * 2005-03-18 2015-05-28 株式会社半導体エネルギー研究所 Display device
US9059117B2 (en) 2009-12-01 2015-06-16 Ignis Innovation Inc. High resolution pixel architecture
US9093029B2 (en) 2011-05-20 2015-07-28 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9093028B2 (en) 2009-12-06 2015-07-28 Ignis Innovation Inc. System and methods for power conservation for AMOLED pixel drivers
US9111481B2 (en) 2010-09-06 2015-08-18 Joled Inc. Display device and method of driving the same
US9111485B2 (en) 2009-06-16 2015-08-18 Ignis Innovation Inc. Compensation technique for color shift in displays
JP2015148823A (en) * 2009-02-27 2015-08-20 株式会社半導体エネルギー研究所 semiconductor device
US9125278B2 (en) 2006-08-15 2015-09-01 Ignis Innovation Inc. OLED luminance degradation compensation
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US9171504B2 (en) 2013-01-14 2015-10-27 Ignis Innovation Inc. Driving scheme for emissive displays providing compensation for driving transistor variations
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9305488B2 (en) 2013-03-14 2016-04-05 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9343006B2 (en) 2012-02-03 2016-05-17 Ignis Innovation Inc. Driving system for active-matrix displays
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US9430958B2 (en) 2010-02-04 2016-08-30 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9437137B2 (en) 2013-08-12 2016-09-06 Ignis Innovation Inc. Compensation accuracy
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
US9489897B2 (en) 2010-12-02 2016-11-08 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9633597B2 (en) 2006-04-19 2017-04-25 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9773439B2 (en) 2011-05-27 2017-09-26 Ignis Innovation Inc. Systems and methods for aging compensation in AMOLED displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9786209B2 (en) 2009-11-30 2017-10-10 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
US9947293B2 (en) 2015-05-27 2018-04-17 Ignis Innovation Inc. Systems and methods of reduced memory bandwidth compensation
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US10019941B2 (en) 2005-09-13 2018-07-10 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US10163401B2 (en) 2010-02-04 2018-12-25 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10176736B2 (en) 2010-02-04 2019-01-08 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10181282B2 (en) 2015-01-23 2019-01-15 Ignis Innovation Inc. Compensation for color variations in emissive devices
US10192479B2 (en) 2014-04-08 2019-01-29 Ignis Innovation Inc. Display system using system level resources to calculate compensation parameters for a display module in a portable device
US10235933B2 (en) 2005-04-12 2019-03-19 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US10311780B2 (en) 2015-05-04 2019-06-04 Ignis Innovation Inc. Systems and methods of optical feedback
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
US10339860B2 (en) 2015-08-07 2019-07-02 Ignis Innovation, Inc. Systems and methods of pixel calibration based on improved reference values
US10388221B2 (en) 2005-06-08 2019-08-20 Ignis Innovation Inc. Method and system for driving a light emitting device display

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384804B1 (en) 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
JP4627822B2 (en) 1999-06-23 2011-02-09 株式会社半導体エネルギー研究所 Display device
KR100888004B1 (en) * 1999-07-14 2009-03-09 소니 가부시끼 가이샤 Current drive circuit and display comprising the same, pixel circuit, and drive method
KR100861756B1 (en) 1999-07-14 2008-10-06 소니 가부시끼 가이샤 Current drive circuit and display comprising the same, pixel circuit, and drive method
US7379039B2 (en) 1999-07-14 2008-05-27 Sony Corporation Current drive circuit and display device using same pixel circuit, and drive method
TW540251B (en) * 1999-09-24 2003-07-01 Semiconductor Energy Lab EL display device and method for driving the same
KR100751845B1 (en) * 1999-10-02 2007-08-24 코닌클리케 필립스 일렉트로닉스 엔.브이. Active matrix electroluminescent display device
JP2003511746A (en) 1999-10-12 2003-03-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Led display
JP2001147659A (en) * 1999-11-18 2001-05-29 Sony Corp Display device
TW525122B (en) 1999-11-29 2003-03-21 Semiconductor Energy Lab Electronic device
US7129918B2 (en) * 2000-03-10 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method of driving electronic device
GB2360870A (en) * 2000-03-31 2001-10-03 Seiko Epson Corp Driver circuit for organic electroluminescent device
TW521237B (en) 2000-04-18 2003-02-21 Semiconductor Energy Lab Light emitting device
KR100773823B1 (en) * 2000-04-18 2007-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light emitting device
JP3736399B2 (en) 2000-09-20 2006-01-18 セイコーエプソン株式会社 Driving method and an electro-optical device of the drive circuit, and an electronic device and an electro-optical device of an active matrix display device
JP4925528B2 (en) * 2000-09-29 2012-04-25 三洋電機株式会社 Display device
SG114502A1 (en) * 2000-10-24 2005-09-28 Semiconductor Energy Lab Light emitting device and method of driving the same
JP2003195815A (en) 2000-11-07 2003-07-09 Sony Corp Active matrix type display device and active matrix type organic electroluminescence display device
US7015882B2 (en) 2000-11-07 2006-03-21 Sony Corporation Active matrix display and active matrix organic electroluminescence display
US6580657B2 (en) * 2001-01-04 2003-06-17 International Business Machines Corporation Low-power organic light emitting diode pixel circuit
JP2002215097A (en) * 2001-01-22 2002-07-31 Sony Corp Electronic display and driving method therefor
JP2002244617A (en) 2001-02-15 2002-08-30 Sanyo Electric Co Ltd Organic el pixel circuit
JPWO2002075709A1 (en) * 2001-03-21 2004-07-08 キヤノン株式会社 Driving circuit of an active matrix light-emitting device
CN1265339C (en) 2001-03-21 2006-07-19 佳能株式会社 Drive circuit for driving active-matrix light-emitting element
KR20030095954A (en) * 2001-04-26 2003-12-24 코닌클리케 필립스 일렉트로닉스 엔.브이. Display device
JP3610923B2 (en) * 2001-05-30 2005-01-19 ソニー株式会社 Active matrix display device and an active matrix organic electroluminescent display device, as well as their driving methods
JP2002358031A (en) 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd Light emitting device and its driving method
SG119161A1 (en) 2001-07-16 2006-02-28 Semiconductor Energy Lab Light emitting device
JP2003043995A (en) * 2001-07-31 2003-02-14 Matsushita Electric Ind Co Ltd Active matrix type oled display device and its driving circuit
JP3951687B2 (en) 2001-08-02 2007-08-01 セイコーエプソン株式会社 Driving the data lines to be used for the control of the unit circuit
JP4887585B2 (en) * 2001-08-24 2012-02-29 パナソニック株式会社 Display panel and information display device using the same
JP5636147B2 (en) * 2001-08-28 2014-12-03 パナソニック株式会社 Active matrix display device
EP1424674B1 (en) 2001-09-07 2017-08-02 Joled Inc. El display panel, its driving method, and el display apparatus
TW563088B (en) 2001-09-17 2003-11-21 Semiconductor Energy Lab Light emitting device, method of driving a light emitting device, and electronic equipment
SG120075A1 (en) 2001-09-21 2006-03-28 Semiconductor Energy Lab Semiconductor device
JP2003108073A (en) * 2001-09-28 2003-04-11 Toshiba Corp Luminous display device
US7742064B2 (en) * 2001-10-30 2010-06-22 Semiconductor Energy Laboratory Co., Ltd Signal line driver circuit, light emitting device and driving method thereof
JP4149168B2 (en) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 The light-emitting device
KR100940342B1 (en) 2001-11-13 2010-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method for driving the same
US6768348B2 (en) 2001-11-30 2004-07-27 Semiconductor Energy Laboratory Co., Ltd. Sense amplifier and electronic apparatus using the same
EP1331627B1 (en) * 2002-01-24 2012-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the semiconductor device
KR100892945B1 (en) 2002-02-22 2009-04-09 삼성전자주식회사 Active matrix type organic light emitting display device and method of manufacturing the same
KR100870004B1 (en) * 2002-03-08 2008-11-21 삼성전자주식회사 Organic electroluminescent display and driving method thereof
US7170478B2 (en) 2002-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of driving light-emitting device
JP3986051B2 (en) 2002-04-30 2007-10-03 株式会社半導体エネルギー研究所 Light-emitting device, an electronic device
JP2004054238A (en) 2002-05-31 2004-02-19 Seiko Epson Corp Electronic circuit, optoelectronic device, driving method of the device and electronic equipment
JP4046015B2 (en) 2002-06-07 2008-02-13 セイコーエプソン株式会社 Electronic circuit, electronic device, electro-optical device and electronic equipment
JP4210830B2 (en) 2002-08-02 2009-01-21 日本電気株式会社 Current drive circuit and image display device
JP4467909B2 (en) 2002-10-04 2010-05-26 シャープ株式会社 Display device
JP3707484B2 (en) 2002-11-27 2005-10-19 セイコーエプソン株式会社 An electro-optical device, a driving method and an electronic apparatus of an electro-optical device
JP2004191752A (en) 2002-12-12 2004-07-08 Seiko Epson Corp Electrooptical device, driving method for electrooptical device, and electronic equipment
CN100504975C (en) 2002-12-19 2009-06-24 株式会社半导体能源研究所 Driving method of light emitting device and electronic apparatus
US7333099B2 (en) 2003-01-06 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit, display device, and electronic apparatus
JP4574127B2 (en) 2003-03-26 2010-11-04 株式会社半導体エネルギー研究所 Element substrate and a light-emitting device
JP4197287B2 (en) * 2003-03-28 2008-12-17 シャープ株式会社 Display device
GB0307320D0 (en) 2003-03-29 2003-05-07 Koninkl Philips Electronics Nv Active matrix display device
JP4484451B2 (en) 2003-05-16 2010-06-16 京セラ株式会社 Image display device
JP4346350B2 (en) 2003-05-28 2009-10-21 三菱電機株式会社 Display device
JP5121114B2 (en) 2003-05-29 2013-01-16 三洋電機株式会社 Pixel circuit and display device
JP2004361753A (en) 2003-06-05 2004-12-24 Chi Mei Electronics Corp Image display device
JP2005099715A (en) 2003-08-29 2005-04-14 Seiko Epson Corp Driving method of electronic circuit, electronic circuit, electronic device, electrooptical device, electronic equipment and driving method of electronic device
JP2005134462A (en) 2003-10-28 2005-05-26 Seiko Epson Corp Method for driving electro-optical device, electro-optical device and electronic apparatus
JP2005189497A (en) * 2003-12-25 2005-07-14 Toshiba Matsushita Display Technology Co Ltd Method for driving current output type semiconductor circuit
GB0400216D0 (en) 2004-01-07 2004-02-11 Koninkl Philips Electronics Nv Electroluminescent display devices
KR100560479B1 (en) * 2004-03-10 2006-03-13 삼성에스디아이 주식회사 Light emitting display device, and display panel and driving method thereof
KR101123197B1 (en) * 2004-03-12 2012-03-19 코닌클리케 필립스 일렉트로닉스 엔.브이. Electrical circuit arrangement for a display device
DE102004028233A1 (en) 2004-06-11 2005-12-29 Deutsche Thomson-Brandt Gmbh A method of driving circuit and an element of a light indicator
JP4393980B2 (en) 2004-06-14 2010-01-06 シャープ株式会社 Display device
JP2006053347A (en) * 2004-08-11 2006-02-23 Eastman Kodak Co Display apparatus
KR20060044032A (en) 2004-11-11 2006-05-16 삼성전자주식회사 Test system for display panel and method of testing thereof
KR100748739B1 (en) * 2005-01-28 2007-08-13 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 El display apparatus and method of driving the same
JP2006251049A (en) 2005-03-08 2006-09-21 Toshiba Matsushita Display Technology Co Ltd Display apparatus and array substrate
US7456580B2 (en) * 2005-06-30 2008-11-25 Lg Display Co., Ltd. Light emitting device
JP4475187B2 (en) 2005-07-04 2010-06-09 セイコーエプソン株式会社 An electro-optical device, a driving circuit, and an electronic device
WO2007018006A1 (en) 2005-08-05 2007-02-15 Sharp Kabushiki Kaisha Display apparatus
JP4753373B2 (en) 2005-09-16 2011-08-24 株式会社半導体エネルギー研究所 Display device and driving method of display device
US8325118B2 (en) 2006-05-30 2012-12-04 Sharp Kabushiki Kaisha Electric current driving type display device
CN101401145B (en) 2006-06-15 2012-06-13 夏普株式会社 Current drive type display and pixel circuit
JP4887203B2 (en) 2006-11-14 2012-02-29 三星モバイルディスプレイ株式會社Samsung Mobile Display Co., Ltd. Pixel, organic electroluminescent display device, and driving method of organic electroluminescent display device
JP2008192642A (en) * 2007-01-31 2008-08-21 Tokyo Electron Ltd Substrate processing apparatus
CN101578648B (en) 2007-03-08 2011-11-30 夏普株式会社 Display apparatus and driving method thereof
JP5308656B2 (en) 2007-12-10 2013-10-09 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニーGlobal Oled Technology Llc. Pixel circuit
JP5260230B2 (en) 2008-10-16 2013-08-14 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニーGlobal Oled Technology Llc. Display device
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6141048B2 (en) 2012-04-23 2017-06-07 キヤノン株式会社 Light emitting device drive device and display device
CN102930824B (en) * 2012-11-13 2015-04-15 京东方科技集团股份有限公司 Pixel circuit and driving method and display device
CN103218973B (en) * 2013-04-19 2015-08-19 深圳市华星光电技术有限公司 Electroluminescent element driving circuit
CN103310728B (en) * 2013-05-29 2015-05-20 京东方科技集团股份有限公司 OLED pixel circuit and a display panel unit
JP5764185B2 (en) * 2013-11-22 2015-08-12 株式会社Joled EL display device
KR20160043594A (en) 2014-10-13 2016-04-22 삼성디스플레이 주식회사 Display device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758635B2 (en) * 1989-11-24 1995-06-21 富士ゼロックス株式会社 El drive circuit
US5198803A (en) * 1990-06-06 1993-03-30 Opto Tech Corporation Large scale movie display system with multiple gray levels
US5302966A (en) * 1992-06-02 1994-04-12 David Sarnoff Research Center, Inc. Active matrix electroluminescent display and method of operation
US5463279A (en) * 1994-08-19 1995-10-31 Planar Systems, Inc. Active matrix electroluminescent cell design
US5684365A (en) * 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media

Cited By (343)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7173584B2 (en) 1998-03-18 2007-02-06 Seiko Epson Corporation Transistor circuit, display panel and electronic apparatus
US8576144B2 (en) 1998-03-18 2013-11-05 Seiko Epson Corporation Transistor circuit, display panel and electronic apparatus
JP2002517806A (en) * 1998-06-12 2002-06-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix electroluminescent display device
JP2002518691A (en) * 1998-06-12 2002-06-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix electroluminescent display device
JP4820001B2 (en) * 1998-06-12 2011-11-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix electroluminescent display
JP4965023B2 (en) * 1998-06-12 2012-07-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Active matrix electroluminescent display
JP2004503794A (en) * 1998-09-03 2004-02-05 サーノフ コーポレイション Dual-mode display for line scan circuit
US8890149B2 (en) 1999-11-30 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Electro-luminescence display device
JP2002149112A (en) * 1999-11-30 2002-05-24 Semiconductor Energy Lab Co Ltd Electronic device
JP2002351401A (en) * 2001-03-21 2002-12-06 Mitsubishi Electric Corp Self-light emission type display device
US7545353B2 (en) 2001-03-22 2009-06-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
US7990350B2 (en) 2001-03-22 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
US8593066B2 (en) 2001-03-22 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for same and electronic apparatus
JP4556354B2 (en) * 2001-07-09 2010-10-06 セイコーエプソン株式会社 Driving circuit, device, and electronic apparatus
JP2003022049A (en) * 2001-07-09 2003-01-24 Seiko Epson Corp Circuit, driver circuit, organic electroluminescent display device, electro-optical device, electronic apparatus, method of controlling current supply to organic electroluminescent pixel and method for driving circuit
US7528812B2 (en) 2001-09-07 2009-05-05 Panasonic Corporation EL display apparatus, driving circuit of EL display apparatus, and image display apparatus
US7138967B2 (en) 2001-09-21 2006-11-21 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US7859520B2 (en) 2001-09-21 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US8599109B2 (en) 2001-09-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US8378356B2 (en) 2001-10-24 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel
JP2007122072A (en) * 2001-10-24 2007-05-17 Semiconductor Energy Lab Co Ltd Display device
US8994029B2 (en) 2001-10-24 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2014029529A (en) * 2001-10-24 2014-02-13 Semiconductor Energy Lab Co Ltd Semiconductor device, display device, display module, and electronic apparatus
US8035109B2 (en) 2001-10-24 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Display device including EL element
US8659027B2 (en) 2001-10-24 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2003202834A (en) * 2001-10-24 2003-07-18 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method therefor
US9082734B2 (en) 2001-10-24 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9449549B2 (en) 2001-10-24 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9892679B2 (en) 2001-10-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2011102995A (en) * 2001-10-24 2011-05-26 Semiconductor Energy Lab Co Ltd Semiconductor device, display and electronic apparatus
JP2010244067A (en) * 2001-10-24 2010-10-28 Semiconductor Energy Lab Co Ltd Semiconductor device, display and electronic apparatus
US9171870B2 (en) 2001-10-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
US10043862B2 (en) 2001-10-26 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
US8941314B2 (en) 2001-10-26 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
US9601560B2 (en) 2001-10-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method
US8305306B2 (en) 2001-10-26 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and driving method thereof
US8896506B2 (en) 2001-10-30 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8487841B2 (en) 2001-10-30 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8164548B2 (en) 2001-10-30 2012-04-24 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and light emitting device and driving method therefor
JP2012068653A (en) * 2001-10-30 2012-04-05 Semiconductor Energy Lab Co Ltd Pixel circuit of organic electroluminescent display device and driving method therefor
US7180479B2 (en) 2001-10-30 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Signal line drive circuit and light emitting device and driving method therefor
US9830853B2 (en) 2001-10-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7576734B2 (en) 2001-10-30 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit, light emitting device, and method for driving the same
US8624802B2 (en) 2001-10-30 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and light emitting device and driving method therefor
US9208717B2 (en) 2001-10-30 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7948453B2 (en) 2001-10-31 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US9076385B2 (en) 2001-10-31 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7193619B2 (en) 2001-10-31 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7583257B2 (en) 2001-10-31 2009-09-01 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US6963336B2 (en) 2001-10-31 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Signal line driving circuit and light emitting device
US7932880B2 (en) 2002-04-26 2011-04-26 Toshiba Matsushita Display Technology Co., Ltd. EL display panel driving method
US7817149B2 (en) 2002-04-26 2010-10-19 Toshiba Matsushita Display Technology Co., Ltd. Semiconductor circuits for driving current-driven display and display
US7777698B2 (en) 2002-04-26 2010-08-17 Toshiba Matsushita Display Technology, Co., Ltd. Drive method of EL display panel
JP2008165247A (en) * 2002-04-26 2008-07-17 Toshiba Matsushita Display Technology Co Ltd El display device
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements
US7184034B2 (en) 2002-05-17 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US7532209B2 (en) 2002-05-17 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display apparatus and driving method thereof
US7511687B2 (en) 2002-05-17 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic apparatus and navigation system
JP2015018258A (en) * 2002-05-17 2015-01-29 株式会社半導体エネルギー研究所 Display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US7170479B2 (en) 2002-05-17 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US7864143B2 (en) 2002-05-17 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US7355571B2 (en) 2002-06-07 2008-04-08 Casio Computer Co., Ltd. Display device and its driving method
US7791568B2 (en) 2002-06-07 2010-09-07 Casio Computer Co., Ltd. Display device and its driving method
US7324101B2 (en) 2002-08-30 2008-01-29 Seiko Epson Corporation Electronic circuit, method of driving electronic circuit, electro-optical device, method of driving electro-optical device, and electronic apparatus
JP2010055116A (en) * 2002-08-30 2010-03-11 Seiko Epson Corp Electro-optical device, and electronic equipment
US7786989B2 (en) 2002-08-30 2010-08-31 Seiko Epson Corporation Electronic circuit, method of driving electronic circuit, electro-optical device, method of driving electro-optical device, and electronic apparatus
JP2005538403A (en) * 2002-09-05 2005-12-15 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィKoninklijke Philips Electronics N.V. Electroluminescent display device
US7355459B2 (en) 2002-10-03 2008-04-08 Seiko Epson Corporation Electronic circuit, method of driving electronic circuit, electronic device, electro-optical device, method of driving electro-optical device, and electronic apparatus
US7098705B2 (en) 2002-10-03 2006-08-29 Seiko Epson Corporation Electronic circuit, method of driving electronic circuit, electronic device, electro-optical device, method of driving electro-optical device, and electronic apparatus
WO2004047064A1 (en) * 2002-11-20 2004-06-03 Toshiba Matsushita Display Technology Co., Ltd. Organic el display and active matrix substrate
JPWO2004047064A1 (en) * 2002-11-20 2006-03-23 東芝松下ディスプレイテクノロジー株式会社 Organic el display and active matrix substrate
JP4619793B2 (en) * 2002-11-20 2011-01-26 東芝モバイルディスプレイ株式会社 Organic el display
US8395607B2 (en) 2002-11-29 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Current driving circuit and display device using the current driving circuit
US8605064B2 (en) 2002-11-29 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Current driving circuit and display device using the current driving circuit
US8035626B2 (en) 2002-11-29 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Current driving circuit and display device using the current driving circuit
JP2004233960A (en) * 2002-12-05 2004-08-19 Sharp Corp Display device
JP4566528B2 (en) * 2002-12-05 2010-10-20 シャープ株式会社 Display device
US7049991B2 (en) 2002-12-10 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, digital-analog converter and display device thereof
US7345657B2 (en) 2002-12-27 2008-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device utilizing the same
US7940239B2 (en) 2002-12-27 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device utilizing the same
US7307604B2 (en) 2002-12-27 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, light-emitting display device and driving method thereof
WO2004061809A1 (en) * 2002-12-27 2004-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, light-emitting display apparatus, and method for driving them
US7365715B2 (en) 2002-12-27 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit, electronic device and personal computer
US9620060B2 (en) 2002-12-27 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistors, switches and capacitor, and electronic device utilizing the same
US8866714B2 (en) 2002-12-27 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device utilizing the same
US9626913B2 (en) 2003-01-17 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device
US8659529B2 (en) 2003-01-17 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Current source circuit, a signal line driver circuit and a driving method thereof and a light emitting device
US7348942B2 (en) 2003-02-19 2008-03-25 Seiko Epson Corporation Electro-optical device, method of driving electro-optical device, and electronic apparatus
US8836616B2 (en) 2003-02-28 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7253665B2 (en) 2003-02-28 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9640106B2 (en) 2003-02-28 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7928933B2 (en) 2003-02-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2004295131A (en) * 2003-03-04 2004-10-21 Frank Robert Libsch Drive circuit for display device
US7378882B2 (en) 2003-04-25 2008-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a pixel having current-driven light emitting element
US8487845B2 (en) 2003-05-09 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7453427B2 (en) 2003-05-09 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8289238B2 (en) 2003-05-14 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2299429A1 (en) 2003-05-14 2011-03-23 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US7463223B2 (en) 2003-05-14 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9576526B2 (en) 2003-05-14 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2004102518A1 (en) * 2003-05-16 2004-11-25 Toshiba Matsushita Display Technology Co., Ltd. Active matrix type display apparatus
JP2004341353A (en) * 2003-05-16 2004-12-02 Toshiba Matsushita Display Technology Co Ltd Active matrix type display device
WO2004102517A1 (en) * 2003-05-16 2004-11-25 Toshiba Matsushita Display Technology Co., Ltd. Active matrix type display apparatus
US7009591B2 (en) 2003-05-16 2006-03-07 Toshiba Matsushita Display Technology Co., Ltd. Active matrix type display apparatus
US7566902B2 (en) 2003-05-16 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
JP2004341352A (en) * 2003-05-16 2004-12-02 Toshiba Matsushita Display Technology Co Ltd Active matrix type display device
JP4550372B2 (en) * 2003-05-16 2010-09-22 東芝モバイルディスプレイ株式会社 Active matrix display device
JP2004361518A (en) * 2003-06-02 2004-12-24 Sony Corp Pixel circuit, display device, and drive method of pixel circuit
JP4590831B2 (en) * 2003-06-02 2010-12-01 ソニー株式会社 The driving method of a display device, and the pixel circuits
WO2004109639A1 (en) * 2003-06-04 2004-12-16 Sony Corporation Pixel circuit, display device, and method for driving pixel circuit
US7714813B2 (en) 2003-06-04 2010-05-11 Sony Corporation Pixel circuit, display device, and method for driving pixel circuit
KR101033674B1 (en) 2003-06-04 2011-05-12 소니 주식회사 Pixel circuit, display device, and method for driving pixel circuit
US7852330B2 (en) 2003-06-06 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8284128B2 (en) 2003-06-06 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8378939B2 (en) 2003-07-11 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7961160B2 (en) 2003-07-31 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device
US7812349B2 (en) 2003-08-07 2010-10-12 Canon Kabushiki Kaisha Display apparatus
JP2005070761A (en) * 2003-08-07 2005-03-17 Canon Inc Image display device and manufacturing method thereof
CN100468501C (en) 2003-08-15 2009-03-11 株式会社半导体能源研究所 Semiconductor device
US8432350B2 (en) 2003-08-15 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8085226B2 (en) 2003-08-15 2011-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2005099773A (en) * 2003-08-29 2005-04-14 Seiko Epson Corp Driving method of electronic circuit, electronic circuit, electronic device, electrooptical device, electronic equipment and driving method of electronic device
JP4608999B2 (en) * 2003-08-29 2011-01-12 セイコーエプソン株式会社 Method of driving an electronic circuit, an electronic circuit, an electronic device, an electro-optical device, a driving method of an electronic device and an electronic device
US9385704B2 (en) 2003-09-12 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US9825624B2 (en) 2003-09-12 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US8350785B2 (en) 2003-09-12 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US9852689B2 (en) 2003-09-23 2017-12-26 Ignis Innovation Inc. Circuit and method for driving an array of light emitting pixels
US9472139B2 (en) 2003-09-23 2016-10-18 Ignis Innovation Inc. Circuit and method for driving an array of light emitting pixels
US8941697B2 (en) 2003-09-23 2015-01-27 Ignis Innovation Inc. Circuit and method for driving an array of light emitting pixels
US10089929B2 (en) 2003-09-23 2018-10-02 Ignis Innovation Inc. Pixel driver circuit with load-balance in current mirror circuit
US9472138B2 (en) 2003-09-23 2016-10-18 Ignis Innovation Inc. Pixel driver circuit with load-balance in current mirror circuit
WO2005045797A1 (en) * 2003-11-10 2005-05-19 Sony Corporation Pixel circuit, display apparatus, and method for driving pixel circuit
US7355572B2 (en) 2003-11-10 2008-04-08 Sony Corporation Pixel circuit, display device, and method of driving pixel circuit
KR101065950B1 (en) 2003-11-10 2011-09-19 소니 주식회사 Pixel circuit, display apparatus, and method for driving pixel circuit
US7397449B2 (en) 2003-11-21 2008-07-08 Seiko Epson Corporation Current generation circuit, method of driving current generation circuit, electro-optical device, and electronic device
JP2005202255A (en) * 2004-01-19 2005-07-28 Sony Corp Display device and its driving method
JP4547605B2 (en) * 2004-01-19 2010-09-22 ソニー株式会社 Display device and a driving method thereof
JP2008077110A (en) * 2004-02-12 2008-04-03 Canon Inc Drive circuit and image forming apparatus using same
JP4533423B2 (en) * 2004-02-12 2010-09-01 キヤノン株式会社 Driving circuit and an image forming apparatus using the same
JP4529467B2 (en) * 2004-02-13 2010-08-25 ソニー株式会社 Pixel circuit and a display device
JP2005227562A (en) * 2004-02-13 2005-08-25 Sony Corp Pixel circuit and display device
JP2005257878A (en) * 2004-03-10 2005-09-22 Sharp Corp Display device
JP4536403B2 (en) * 2004-03-10 2010-09-01 シャープ株式会社 Display device
US7342560B2 (en) 2004-04-01 2008-03-11 Canon Kabushiki Kaisha Voltage current conversion device and light emitting device
JP2005300700A (en) * 2004-04-08 2005-10-27 Sony Corp Display device and driving method therefor
JP4665423B2 (en) * 2004-04-08 2011-04-06 ソニー株式会社 Display device and a driving method thereof
US7339562B2 (en) 2004-04-12 2008-03-04 Sanyo Electric Co., Ltd. Organic electroluminescence pixel circuit
WO2005106834A1 (en) * 2004-04-30 2005-11-10 Fuji Photo Film Co., Ltd. Active-matrix display
US7796102B2 (en) 2004-04-30 2010-09-14 Fujifilm Corporation Active matrix type display device
US7944416B2 (en) 2004-05-20 2011-05-17 Kyocera Corporation Image display apparatus and method for driving the same
US8581485B2 (en) 2004-05-20 2013-11-12 Lg Display Co., Ltd. Image display apparatus
WO2005114629A1 (en) * 2004-05-20 2005-12-01 Kyocera Corporation Image display device and driving method thereof
CN100481180C (en) 2004-05-20 2009-04-22 京瓷株式会社 Image display device and driving method thereof
KR100859970B1 (en) * 2004-05-20 2008-09-25 쿄세라 코포레이션 Image display device and driving method thereof
US10115350B2 (en) 2004-05-21 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having rectifying elements connected to a pixel of a display device
US9536937B2 (en) 2004-05-21 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a rectifying element connected to a pixel of a display device
CN100514402C (en) 2004-05-21 2009-07-15 株式会社半导体能源研究所 Semiconductor device, display device and electronic device
US8917265B2 (en) 2004-05-21 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device including a current source and a diode electrically connected at an output of the current source
US8355015B2 (en) 2004-05-21 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device including a diode electrically connected to a signal line
US9934726B2 (en) 2004-05-28 2018-04-03 Sony Corporation Display device having shared column lines
US8378930B2 (en) 2004-05-28 2013-02-19 Sony Corporation Pixel circuit and display device having symmetric pixel circuits and shared voltage lines
US9202424B2 (en) 2004-05-28 2015-12-01 Sony Corporation Display device having shared column lines
US10170042B2 (en) 2004-05-28 2019-01-01 Sony Corporation Display device having shared column lines
US8988327B2 (en) 2004-05-28 2015-03-24 Sony Corporation Display device having shared column lines
US8519915B2 (en) 2004-05-28 2013-08-27 Sony Corporation Pixel circuit and display device having an electrooptic element
US8937581B2 (en) 2004-05-28 2015-01-20 Sony Corporation Display device having shared column lines
US8643572B2 (en) 2004-05-28 2014-02-04 Sony Corporation Pixel circuit and display device having an electrooptic element controlled in luminance by a signal line
US9711086B2 (en) 2004-05-28 2017-07-18 Sony Corporation Display device having shared column lines
US9460669B2 (en) 2004-05-28 2016-10-04 Sony Corporation Display device having shared column lines
US7554362B2 (en) 2004-06-25 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method thereof and electronic device
US8723550B2 (en) 2004-06-25 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method thereof and electronic device
US8368427B2 (en) 2004-06-25 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method thereof and electronic device
US7911233B2 (en) 2004-06-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including current source circuit
USRE47257E1 (en) 2004-06-29 2019-02-26 Ignis Innovation Inc. Voltage-programming scheme for current-driven AMOLED displays
USRE45291E1 (en) 2004-06-29 2014-12-16 Ignis Innovation Inc. Voltage-programming scheme for current-driven AMOLED displays
US7408533B2 (en) 2004-06-29 2008-08-05 Samsung Sdi Co., Ltd. Light emitting display and driving method thereof
JP2006017968A (en) * 2004-06-30 2006-01-19 Eastman Kodak Co Active matrix type display device
US7511708B2 (en) 2004-08-05 2009-03-31 Sharp Kabushiki Kaisha Display device and driving method thereof
US7443367B2 (en) 2004-09-01 2008-10-28 Sharp Kabushiki Kaisha Display device and method for driving the same
JP2006119180A (en) * 2004-10-19 2006-05-11 Seiko Epson Corp Electro-optic device, driving method therefor, and electronic equipment
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US9970964B2 (en) 2004-12-15 2018-05-15 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8994625B2 (en) 2004-12-15 2015-03-31 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
JP2006208966A (en) * 2005-01-31 2006-08-10 Pioneer Electronic Corp Display device and driving method thereof
JP2006215296A (en) * 2005-02-04 2006-08-17 Sony Corp Display device and pixel driving method
US10078984B2 (en) 2005-02-10 2018-09-18 Ignis Innovation Inc. Driving circuit for current programmed organic light-emitting diode displays
JP2008530599A (en) * 2005-02-10 2008-08-07 イグニス・イノベイション・インコーポレーテッドIgnis Innovation Incorporated A current programming organic light emitting diode drive circuit for a display
WO2006090560A1 (en) * 2005-02-25 2006-08-31 Kyocera Corporation Image display device
JP4782103B2 (en) * 2005-02-25 2011-09-28 京セラ株式会社 Image display device
US9013373B2 (en) 2005-02-25 2015-04-21 Lg Display Co., Ltd. Image display device
JP2006251632A (en) * 2005-03-14 2006-09-21 Sony Corp Pixel circuit and display device
JP2015099373A (en) * 2005-03-18 2015-05-28 株式会社半導体エネルギー研究所 Display device
WO2006103802A1 (en) * 2005-03-25 2006-10-05 Sharp Kabushiki Kaisha Display device and method for driving same
US10235933B2 (en) 2005-04-12 2019-03-19 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
JP2006293217A (en) * 2005-04-14 2006-10-26 Seiko Epson Corp Unit circuit and control method therefor, electronic device, electrooptical device and electronic equipment
US8411079B2 (en) 2005-04-14 2013-04-02 Seiko Epson Corporation Unit circuit, control method thereof, electronic device, electro-optical device, and electronic apparatus
JP2006301161A (en) * 2005-04-19 2006-11-02 Seiko Epson Corp Electronic circuit, its driving method, electrooptical apparatus, and electronic equipment
US7420530B2 (en) 2005-05-12 2008-09-02 Sony Corporation Pixel circuit, display device method for controlling pixel circuit
US10388221B2 (en) 2005-06-08 2019-08-20 Ignis Innovation Inc. Method and system for driving a light emitting device display
US9613568B2 (en) 2005-07-14 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8059116B2 (en) 2005-07-20 2011-11-15 Pioneer Corporation Active matrix display device
US10019941B2 (en) 2005-09-13 2018-07-10 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
JP2006072377A (en) * 2005-09-16 2006-03-16 Seiko Epson Corp Circuit, device, and electronic equipment
JP2006106730A (en) * 2005-09-16 2006-04-20 Seiko Epson Corp Device, driving method of device, and electronic equipment
JP4556814B2 (en) * 2005-09-16 2010-10-06 セイコーエプソン株式会社 Apparatus, driving method, and electronic equipment of the apparatus
US7825877B2 (en) 2005-10-18 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Display device
US8289235B2 (en) 2005-10-19 2012-10-16 Sanyo Electric Co., Ltd. Display apparatus with gate electrodes formed in a projecting manner
US8692749B2 (en) 2005-10-19 2014-04-08 Sanyo Electric Co., Ltd. Display apparatus with continuous semiconductor layer
US8400374B2 (en) 2005-12-02 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9633597B2 (en) 2006-04-19 2017-04-25 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US9842544B2 (en) 2006-04-19 2017-12-12 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US10127860B2 (en) 2006-04-19 2018-11-13 Ignis Innovation Inc. Stable driving scheme for active matrix displays
JP2008015081A (en) * 2006-07-04 2008-01-24 Seiko Epson Corp Display device and display system using the same
US8054250B2 (en) 2006-08-08 2011-11-08 Samsung Mobile Display Co., Ltd Pixel, organic light emitting display, and driving method thereof
US9125278B2 (en) 2006-08-15 2015-09-01 Ignis Innovation Inc. OLED luminance degradation compensation
US10325554B2 (en) 2006-08-15 2019-06-18 Ignis Innovation Inc. OLED luminance degradation compensation
US9530352B2 (en) 2006-08-15 2016-12-27 Ignis Innovations Inc. OLED luminance degradation compensation
US7825880B2 (en) 2006-08-23 2010-11-02 Sony Corporation Pixel circuit
CN101578649B (en) 2007-02-01 2011-08-17 京瓷株式会社 Image display device and method for driving image display device
US8325116B2 (en) 2007-02-01 2012-12-04 Lg Display Co., Ltd. Image display apparatus, and image display apparatus driving method
WO2008093792A1 (en) * 2007-02-01 2008-08-07 Kyocera Corporation Image display device and method for driving image display device
JP2008286963A (en) * 2007-05-17 2008-11-27 Sony Corp Display device and method for driving display device
US8674910B2 (en) 2007-06-05 2014-03-18 Sony Corporation Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
US8928566B2 (en) 2007-06-05 2015-01-06 Sony Corporation Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
US8922466B2 (en) 2007-06-05 2014-12-30 Sony Corporation Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
US9257073B2 (en) 2007-06-05 2016-02-09 Joled Inc. Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
US8982022B2 (en) 2007-06-05 2015-03-17 Sony Corporation Display panel driving method, display apparatus, display panel driving apparatus and electronic apparatus
US8314755B2 (en) 2007-06-15 2012-11-20 Panasonic Corporation Image display device
US8169385B2 (en) 2007-06-15 2012-05-01 Panasonic Corporation Image display device
US8432338B2 (en) 2007-06-15 2013-04-30 Panasonic Corporation Image display device having a plurality of pixel circuits using current-driven type light-emitting elements
US8030656B2 (en) 2007-06-22 2011-10-04 Samsung Mobile Display Co., Ltd. Pixel, organic light emitting display and associated methods, in which a pixel transistor includes a non-volatile memory element
JP4531798B2 (en) * 2007-06-22 2010-08-25 三星モバイルディスプレイ株式會社 The organic light emitting display and a pixel
JP2009003403A (en) * 2007-06-22 2009-01-08 Samsung Sdi Co Ltd Organic electroluminescent display and method of manufacturing same
US8450121B2 (en) 2007-06-22 2013-05-28 Samsung Display Co., Ltd. Method of manufacturing an organic light emitting display
US8305305B2 (en) 2007-07-19 2012-11-06 Panasonic Corporation Image display device
JP2008003623A (en) * 2007-08-10 2008-01-10 Hitachi Ltd Display device
US8242985B2 (en) 2007-12-11 2012-08-14 Sharp Kabushiki Kaisha Display device and method for manufacturing the same
WO2009075129A1 (en) 2007-12-11 2009-06-18 Sharp Kabushiki Kaisha Display device and its manufacturing method
US8537182B2 (en) 2008-02-08 2013-09-17 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
US9361857B2 (en) 2008-02-08 2016-06-07 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
US9646538B2 (en) 2008-02-08 2017-05-09 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
US9761176B2 (en) 2008-02-08 2017-09-12 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
US8817012B2 (en) 2008-02-08 2014-08-26 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
US9626911B2 (en) 2008-02-08 2017-04-18 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
US9953578B2 (en) 2008-02-08 2018-04-24 Sony Corporation Light emitting period setting method, driving method for display panel, driving method for backlight, light emitting period setting apparatus, semiconductor device, display panel and electronic apparatus
KR101493086B1 (en) * 2008-05-16 2015-02-13 엘지디스플레이 주식회사 Organic electro-luminescence display device and manufacturing method thereof
RU2457551C1 (en) * 2008-08-07 2012-07-27 Шарп Кабусики Кайся Display device and control method thereof
US8674914B2 (en) 2008-08-07 2014-03-18 Sharp Kabushiki Kaisha Display device and method of driving the same
JP2014089459A (en) * 2008-08-07 2014-05-15 Sharp Corp Display device and driving method of the same
WO2010016316A1 (en) * 2008-08-07 2010-02-11 シャープ株式会社 Display apparatus and method of driving the same
JP5199367B2 (en) * 2008-08-07 2013-05-15 シャープ株式会社 Display device and driving method thereof
JP2009048202A (en) * 2008-09-16 2009-03-05 Hitachi Ltd Image display device
US9478168B2 (en) 2009-02-27 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof, and electronic device
US9842540B2 (en) 2009-02-27 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof, and electronic device
JP2015148823A (en) * 2009-02-27 2015-08-20 株式会社半導体エネルギー研究所 semiconductor device
US8736525B2 (en) 2009-04-13 2014-05-27 Global Oled Technology Llc Display device using capacitor coupled light emission control transistors for mobility correction
US9418587B2 (en) 2009-06-16 2016-08-16 Ignis Innovation Inc. Compensation technique for color shift in displays
US9111485B2 (en) 2009-06-16 2015-08-18 Ignis Innovation Inc. Compensation technique for color shift in displays
US9117400B2 (en) 2009-06-16 2015-08-25 Ignis Innovation Inc. Compensation technique for color shift in displays
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
WO2011044200A1 (en) 2009-10-08 2011-04-14 Global Oled Technology Llc Pixel circuit and display device
US9064457B2 (en) 2009-10-08 2015-06-23 Global Oled Technology Llc Pixel circuit and display device
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US10304390B2 (en) 2009-11-30 2019-05-28 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US9786209B2 (en) 2009-11-30 2017-10-10 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US9059117B2 (en) 2009-12-01 2015-06-16 Ignis Innovation Inc. High resolution pixel architecture
US9093028B2 (en) 2009-12-06 2015-07-28 Ignis Innovation Inc. System and methods for power conservation for AMOLED pixel drivers
US9262965B2 (en) 2009-12-06 2016-02-16 Ignis Innovation Inc. System and methods for power conservation for AMOLED pixel drivers
US10395574B2 (en) 2010-02-04 2019-08-27 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
US9430958B2 (en) 2010-02-04 2016-08-30 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10176736B2 (en) 2010-02-04 2019-01-08 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10163401B2 (en) 2010-02-04 2018-12-25 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9773441B2 (en) 2010-02-04 2017-09-26 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10032399B2 (en) 2010-02-04 2018-07-24 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US8994617B2 (en) 2010-03-17 2015-03-31 Ignis Innovation Inc. Lifetime uniformity parameter extraction methods
US9111481B2 (en) 2010-09-06 2015-08-18 Joled Inc. Display device and method of driving the same
US9997110B2 (en) 2010-12-02 2018-06-12 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9489897B2 (en) 2010-12-02 2016-11-08 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US9093029B2 (en) 2011-05-20 2015-07-28 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10032400B2 (en) 2011-05-20 2018-07-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10127846B2 (en) 2011-05-20 2018-11-13 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10325537B2 (en) 2011-05-20 2019-06-18 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9799248B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9589490B2 (en) 2011-05-20 2017-03-07 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9355584B2 (en) 2011-05-20 2016-05-31 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
US9978297B2 (en) 2011-05-26 2018-05-22 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
US9640112B2 (en) 2011-05-26 2017-05-02 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
US9773439B2 (en) 2011-05-27 2017-09-26 Ignis Innovation Inc. Systems and methods for aging compensation in AMOLED displays
US10417945B2 (en) 2011-05-27 2019-09-17 Ignis Innovation Inc. Systems and methods for aging compensation in AMOLED displays
JP2012078850A (en) * 2011-11-28 2012-04-19 Seiko Epson Corp Display device and control method of display device
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US10380944B2 (en) 2011-11-29 2019-08-13 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US10043448B2 (en) 2012-02-03 2018-08-07 Ignis Innovation Inc. Driving system for active-matrix displays
US9792857B2 (en) 2012-02-03 2017-10-17 Ignis Innovation Inc. Driving system for active-matrix displays
US9343006B2 (en) 2012-02-03 2016-05-17 Ignis Innovation Inc. Driving system for active-matrix displays
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US10176738B2 (en) 2012-05-23 2019-01-08 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9940861B2 (en) 2012-05-23 2018-04-10 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9741279B2 (en) 2012-05-23 2017-08-22 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9368063B2 (en) 2012-05-23 2016-06-14 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9536460B2 (en) 2012-05-23 2017-01-03 Ignis Innovation Inc. Display systems with compensation for line propagation delay
JP2014081422A (en) * 2012-10-15 2014-05-08 Japan Display Inc Display device
US10311790B2 (en) 2012-12-11 2019-06-04 Ignis Innovation Inc. Pixel circuits for amoled displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9685114B2 (en) 2012-12-11 2017-06-20 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US10140925B2 (en) 2012-12-11 2018-11-27 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9171504B2 (en) 2013-01-14 2015-10-27 Ignis Innovation Inc. Driving scheme for emissive displays providing compensation for driving transistor variations
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
JP2014176970A (en) * 2013-03-13 2014-09-25 Canon Inc Light emitting apparatus and printer
US9536465B2 (en) 2013-03-14 2017-01-03 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US9305488B2 (en) 2013-03-14 2016-04-05 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US9818323B2 (en) 2013-03-14 2017-11-14 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US10198979B2 (en) 2013-03-14 2019-02-05 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US9997107B2 (en) 2013-03-15 2018-06-12 Ignis Innovation Inc. AMOLED displays with multiple readout circuits
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US9721512B2 (en) 2013-03-15 2017-08-01 Ignis Innovation Inc. AMOLED displays with multiple readout circuits
US9990882B2 (en) 2013-08-12 2018-06-05 Ignis Innovation Inc. Compensation accuracy
US9437137B2 (en) 2013-08-12 2016-09-06 Ignis Innovation Inc. Compensation accuracy
JP2014002417A (en) * 2013-09-24 2014-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device, display device, display module and electronic apparatus
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
US10186190B2 (en) 2013-12-06 2019-01-22 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US10395585B2 (en) 2013-12-06 2019-08-27 Ignis Innovation Inc. OLED display system and method
US10192479B2 (en) 2014-04-08 2019-01-29 Ignis Innovation Inc. Display system using system level resources to calculate compensation parameters for a display module in a portable device
US10181282B2 (en) 2015-01-23 2019-01-15 Ignis Innovation Inc. Compensation for color variations in emissive devices
US10311780B2 (en) 2015-05-04 2019-06-04 Ignis Innovation Inc. Systems and methods of optical feedback
US9947293B2 (en) 2015-05-27 2018-04-17 Ignis Innovation Inc. Systems and methods of reduced memory bandwidth compensation
US10403230B2 (en) 2015-05-27 2019-09-03 Ignis Innovation Inc. Systems and methods of reduced memory bandwidth compensation
US10339860B2 (en) 2015-08-07 2019-07-02 Ignis Innovation, Inc. Systems and methods of pixel calibration based on improved reference values

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