JPS61131171U - - Google Patents

Info

Publication number
JPS61131171U
JPS61131171U JP1446785U JP1446785U JPS61131171U JP S61131171 U JPS61131171 U JP S61131171U JP 1446785 U JP1446785 U JP 1446785U JP 1446785 U JP1446785 U JP 1446785U JP S61131171 U JPS61131171 U JP S61131171U
Authority
JP
Japan
Prior art keywords
gate
capacitor
transistor
source
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1446785U
Other languages
Japanese (ja)
Other versions
JPH0617280Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985014467U priority Critical patent/JPH0617280Y2/en
Priority to EP86400217A priority patent/EP0190973B1/en
Priority to DE8686400217T priority patent/DE3685501T2/en
Priority to US06/826,019 priority patent/US4694341A/en
Publication of JPS61131171U publication Critical patent/JPS61131171U/ja
Application granted granted Critical
Publication of JPH0617280Y2 publication Critical patent/JPH0617280Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例の接続図、第2図
はこの考案の一実施例の動作説明に用いる波形図
、第3図はこの考案の一実施例をバツフア回路に
用いる場合の説明に用いる各部波形図、第4図は
この考案の他の実施例の接続図、第5図はこの考
案の他の実施例の動作説明に用いる波形図、第6
図はこの考案の更に他の実施例の接続図、第7図
はこの考案の更に他の実施例の動作説明に用いる
波形図、第8図及び第10図は従来のサンプルホ
ールド回路の接続図、第9図及び第11図は従来
のサンプルホールド回路の動作説明に用いる波形
図である。 図面における主要な符号の説明、1:入力端子
、2:バイアス電圧の供給端子、3:ブランキン
グパルスの供給端子、4:サンプリングパルスの
供給端子、5:電源端子、6:出力端子、7,8
,10:ゲート用のMOSトランジスタ、9:出
力用のMOSトランジスタ、11,12:コンデ
ンサ、13:定電流源。
Fig. 1 is a connection diagram of one embodiment of this invention, Fig. 2 is a waveform diagram used to explain the operation of one embodiment of this invention, and Fig. 3 is an explanation of the case where one embodiment of this invention is used in a buffer circuit. 4 is a connection diagram of another embodiment of this invention. FIG. 5 is a waveform diagram used to explain the operation of another embodiment of this invention.
The figure is a connection diagram of yet another embodiment of this invention, Figure 7 is a waveform diagram used to explain the operation of still another embodiment of this invention, and Figures 8 and 10 are connection diagrams of a conventional sample and hold circuit. , FIG. 9, and FIG. 11 are waveform diagrams used to explain the operation of a conventional sample-and-hold circuit. Explanation of main symbols in the drawings: 1: input terminal, 2: bias voltage supply terminal, 3: blanking pulse supply terminal, 4: sampling pulse supply terminal, 5: power supply terminal, 6: output terminal, 7, 8
, 10: MOS transistor for gate, 9: MOS transistor for output, 11, 12: capacitor, 13: constant current source.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 入力信号を第1のゲート素子を介して第1のコ
ンデンサの一端に供給し、該第1のコンデンサの
他端を交流的に接地し、上記第1のコンデンサの
一端を第2のコンデンサを介してソース(又はエ
ミツタ)フオロワトランジスタのゲート(又はベ
ース)に接続し、該トランジスタのソース(又は
エミツタ)から出力を得ると共に、該ソース(又
はエミツタ)を第2のゲート素子を介して上記第
1のコンデンサの一端に接続し、上記トランジス
タのゲート(又はベース)を第3のゲート素子を
介して所定の電圧値を有する直流電圧源に接続し
て、上記入力信号の第1の期間上記第2及び第3
のゲート素子をオンし、上記第2のコンデンサに
上記トランジスタのゲート・ソース(又はベース
・エミツタ)間オフセツト電圧に相当する電圧を
蓄積し、上記入力信号の第2の期間に上記第1の
ゲート素子をオンにし出力に入力信号と等しいレ
ベルの信号を得るようにしたサンプルホールド回
路。
An input signal is supplied to one end of a first capacitor via a first gate element, the other end of the first capacitor is AC grounded, and one end of the first capacitor is connected to one end of the first capacitor via a second capacitor. The source (or emitter) is connected to the gate (or base) of the follower transistor, and the output is obtained from the source (or emitter) of the transistor, and the source (or emitter) is connected to the gate (or base) of the follower transistor through the second gate element. 1, and the gate (or base) of the transistor is connected to a DC voltage source having a predetermined voltage value via a third gate element, and the first period of the input signal is 2nd and 3rd
The gate element of the transistor is turned on, a voltage corresponding to the gate-source (or base-emitter) offset voltage of the transistor is stored in the second capacitor, and the gate element of the first gate is turned on during the second period of the input signal. A sample and hold circuit that turns on the element and obtains a signal at the output with the same level as the input signal.
JP1985014467U 1985-02-04 1985-02-04 Sample-hold circuit Expired - Lifetime JPH0617280Y2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1985014467U JPH0617280Y2 (en) 1985-02-04 1985-02-04 Sample-hold circuit
EP86400217A EP0190973B1 (en) 1985-02-04 1986-02-03 Sample-and-hold circuit
DE8686400217T DE3685501T2 (en) 1985-02-04 1986-02-03 SCAN AND STOP CIRCUIT.
US06/826,019 US4694341A (en) 1985-02-04 1986-02-04 Sample-and-hold circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985014467U JPH0617280Y2 (en) 1985-02-04 1985-02-04 Sample-hold circuit

Publications (2)

Publication Number Publication Date
JPS61131171U true JPS61131171U (en) 1986-08-16
JPH0617280Y2 JPH0617280Y2 (en) 1994-05-02

Family

ID=30499418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985014467U Expired - Lifetime JPH0617280Y2 (en) 1985-02-04 1985-02-04 Sample-hold circuit

Country Status (1)

Country Link
JP (1) JPH0617280Y2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001083924A (en) * 1999-09-08 2001-03-30 Matsushita Electric Ind Co Ltd Drive circuit and drive method of current control type light emitting element
JP2002514320A (en) * 1997-04-23 2002-05-14 サーノフ コーポレイション Active matrix light emitting diode pixel structure and method
JP2004201297A (en) * 2002-12-03 2004-07-15 Semiconductor Energy Lab Co Ltd Analog circuit, and display device and electronic equipment using the same
JP2008206195A (en) * 2002-01-17 2008-09-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2009296643A (en) * 2002-12-03 2009-12-17 Semiconductor Energy Lab Co Ltd Semiconductor device, display device, and electronic device
US8400191B2 (en) 2001-11-28 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Electric circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005266365A (en) * 2004-03-18 2005-09-29 Semiconductor Energy Lab Co Ltd Source follower circuit, driving method thereof, voltage follower circuit, and display apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126457A (en) * 1974-08-30 1976-03-04 Yamatake Honeywell Co Ltd
JPS5982699A (en) * 1982-09-29 1984-05-12 ウエスターン エレクトリック カムパニー,インコーポレーテツド Circuit and method for sample-holding signal
JPS59117791A (en) * 1982-12-20 1984-07-07 ウエスターン エレクトリック カムパニー,インコーポレーテッド Sample-holding circuit
JPS59165571A (en) * 1983-03-09 1984-09-18 Hitachi Ltd Dc restoration circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126457A (en) * 1974-08-30 1976-03-04 Yamatake Honeywell Co Ltd
JPS5982699A (en) * 1982-09-29 1984-05-12 ウエスターン エレクトリック カムパニー,インコーポレーテツド Circuit and method for sample-holding signal
JPS59117791A (en) * 1982-12-20 1984-07-07 ウエスターン エレクトリック カムパニー,インコーポレーテッド Sample-holding circuit
JPS59165571A (en) * 1983-03-09 1984-09-18 Hitachi Ltd Dc restoration circuit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002514320A (en) * 1997-04-23 2002-05-14 サーノフ コーポレイション Active matrix light emitting diode pixel structure and method
JP2001083924A (en) * 1999-09-08 2001-03-30 Matsushita Electric Ind Co Ltd Drive circuit and drive method of current control type light emitting element
US8400191B2 (en) 2001-11-28 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Electric circuit
US8536937B2 (en) 2001-11-28 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Electric circuit
US8841941B2 (en) 2001-11-28 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Electric circuit
JP2008206195A (en) * 2002-01-17 2008-09-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2004201297A (en) * 2002-12-03 2004-07-15 Semiconductor Energy Lab Co Ltd Analog circuit, and display device and electronic equipment using the same
JP2009296643A (en) * 2002-12-03 2009-12-17 Semiconductor Energy Lab Co Ltd Semiconductor device, display device, and electronic device
US8305138B2 (en) 2002-12-03 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and display device and electronic device
US8441315B2 (en) 2002-12-03 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and display device and electronic device
US8680917B2 (en) 2002-12-03 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and display device and electronic device
US8836420B2 (en) 2002-12-03 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and display device and electronic device

Also Published As

Publication number Publication date
JPH0617280Y2 (en) 1994-05-02

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