JPS59125140U - analog switch - Google Patents

analog switch

Info

Publication number
JPS59125140U
JPS59125140U JP1716583U JP1716583U JPS59125140U JP S59125140 U JPS59125140 U JP S59125140U JP 1716583 U JP1716583 U JP 1716583U JP 1716583 U JP1716583 U JP 1716583U JP S59125140 U JPS59125140 U JP S59125140U
Authority
JP
Japan
Prior art keywords
switch
leakage
analog switch
low
resistive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1716583U
Other languages
Japanese (ja)
Inventor
平田 承夫
大津 博
栗原 洋一郎
Original Assignee
横河電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 横河電機株式会社 filed Critical 横河電機株式会社
Priority to JP1716583U priority Critical patent/JPS59125140U/en
Publication of JPS59125140U publication Critical patent/JPS59125140U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のアナログスイッチの回路図、第2図は本
考案に係るアナログスイッチの回路図、第3図は第2図
の回路を用いたスキャナの回路図である。 FET・・・MOS−FET、Ql、Q2・・・スイッ
チ素子。
FIG. 1 is a circuit diagram of a conventional analog switch, FIG. 2 is a circuit diagram of an analog switch according to the present invention, and FIG. 3 is a circuit diagram of a scanner using the circuit of FIG. FET...MOS-FET, Ql, Q2... Switch element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] MOS形の電界効果形トランジスタで構成した高耐圧の
スイッチSWと、スイッチSWと信号出力端子5out
の間に抵抗素子Rを介して接続され前記スイッチSWが
ONのときにONになる低リークの第1の半導体スイッ
チ素子Q1と、前記抵抗素子Rの一端とリーク電流取り
出し端子Loutとの間に接続され前記スイッチSWが
OFFのときONになる第2の低リークの半導体スイッ
チQ2とよりなるアナログスイッチ。
A high voltage switch SW composed of a MOS type field effect transistor, a switch SW and a signal output terminal 5out.
between a low-leakage first semiconductor switching element Q1 that is connected via a resistive element R between them and turns ON when the switch SW is ON, and one end of the resistive element R and the leakage current extraction terminal Lout. An analog switch comprising a second low-leakage semiconductor switch Q2 connected to the switch SW and turned ON when the switch SW is OFF.
JP1716583U 1983-02-08 1983-02-08 analog switch Pending JPS59125140U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1716583U JPS59125140U (en) 1983-02-08 1983-02-08 analog switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1716583U JPS59125140U (en) 1983-02-08 1983-02-08 analog switch

Publications (1)

Publication Number Publication Date
JPS59125140U true JPS59125140U (en) 1984-08-23

Family

ID=30148396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1716583U Pending JPS59125140U (en) 1983-02-08 1983-02-08 analog switch

Country Status (1)

Country Link
JP (1) JPS59125140U (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211480U (en) * 1975-07-10 1977-01-26
JPS5215168U (en) * 1975-07-21 1977-02-02
JPS57107633A (en) * 1980-09-12 1982-07-05 Setaajiei Corp Solid state switching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211480U (en) * 1975-07-10 1977-01-26
JPS5215168U (en) * 1975-07-21 1977-02-02
JPS57107633A (en) * 1980-09-12 1982-07-05 Setaajiei Corp Solid state switching device

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