KR101493086B1 - Organic electro-luminescence display device and manufacturing method thereof - Google Patents

Abstract

An organic light emitting display and a method of manufacturing the same are disclosed.

The organic light emitting display of the present invention includes a plurality of pixels arranged in a matrix, each pixel including a switching transistor connected to a gate line and a data line, a driving transistor connected between the switching transistor and the voltage supply line, An organic light emitting diode connected to the driving transistor, and a resistance element formed between the driving transistor and the source region of the driving transistor.

The present invention uses a source region of a driving transistor as a resistance element to compensate a driving current according to a change in mobility or a threshold voltage of each pixel to maintain a uniform luminance.

An organic light emitting display, a source region, a resistance element, a luminance

Description

[0001] The present invention relates to an organic light-emitting display device and a manufacturing method thereof,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display, and more particularly, to an organic light emitting display capable of improving luminance uniformity and a method of manufacturing the same.

Due to the development of the information society, display devices capable of displaying information are actively being developed. The display device includes a liquid crystal display device, an organic electro-luminescence display device, a plasma display panel, and a field emission display device.

Among them, the organic light emitting display device generates light by itself without using a backlight unit that generates light, unlike a liquid crystal display device.

Further, since the organic light emitting display device does not use a liquid crystal like a liquid crystal display device, it has a simple process and a low manufacturing cost.

1 is a circuit diagram showing a unit pixel of a conventional organic light emitting diode display.

In the organic light emitting diode display, a plurality of pixels may be arranged in a matrix form. For convenience of explanation, FIG. 1 representatively shows one pixel of the plurality of pixels.

As shown in Fig. 1, the switching transistor TFT1 is electrically connected to the gate line GL and the data line DL.

The driving transistor TFT2 is electrically connected to the switching transistor TFT1 and the voltage supply line VDD.

A storage capacitor Cst is formed between the gate terminal and the source terminal of the driving transistor TFT2. Further, the storage capacitor Cst is electrically connected between the switching transistor TFT1 and the voltage supply line VDD.

The organic light emitting diode OLED is electrically connected between the driving transistor TFT2 and the ground ground.

The switching transistor TFT1 is turned on by the selection signal supplied to the gate line GL and the data voltage supplied to the data line DL is supplied to the driving transistor TFT2 via the switching transistor TFT1.

The driving transistor TFT supplies the driving current I _OLED to the organic light emitting diode _OLED as shown in Equation 1 below. Accordingly, the organic light emitting diode OLED generates light having luminance corresponding to the driving current I _OLED .

Where W is the width of the active layer, L is the length of the active layer, Vdata is the data voltage, and _VTH is the threshold voltage.

Polycrystalline Si crystallized by eximer laser annealing may be formed to increase the mobility of the active layer of the driving transistor TFT2.

In this way, when annealing is performed by an excimer laser, a region (dense region) where the laser is strongly irradiated on the substrate of the organic light emitting display device due to the instability of the excimer laser exists, and a region (small region) that is not.

In this case, driving characteristics of the driving transistor formed in the dense region and the driving transistor formed in the small region are different. That is, the driving transistor formed in the dense region has a high mobility and a low threshold voltage, while the driving transistor formed in the small region has a small mobility and a large threshold voltage.

As described above, as the mobility and the threshold voltage of the driving transistor of each pixel become different from each other, even if the same data voltage is supplied to each pixel, different driving currents I _OLED are supplied to the organic light emitting diode OLED, The luminance is different and the luminance unevenness occurs.

An object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same that can improve a luminance uniformity by adding a resistance element to a source terminal of a driving transistor.

According to a first embodiment of the present invention, an organic light emitting display includes a plurality of pixels arranged in a matrix, each pixel including: a switching transistor connected to a gate line and a data line; A driving transistor connected between the switching transistor and the voltage supply line; A storage capacitor coupled between the switching transistor and the voltage supply line; An organic light emitting diode connected to the driving transistor; And a resistance element formed between the voltage supply line and the driving transistor and formed from a source region of the driving transistor.

According to a second embodiment of the present invention, there is provided a method of manufacturing an organic light emitting display including a plurality of pixels arranged in a matrix, each pixel including a switching transistor region, a storage capacitor region, a driving transistor region and a pixel region, Forming an active layer, a source region, and a drain region on the substrate of the switching transistor region and the driving transistor region, respectively; Forming a gate insulating film on the substrate; Forming a gate electrode, a gate line, and a first connection line on the gate insulating film; Forming an interlayer insulating film in which the source region, the drain region, and the first connection line are exposed on the gate electrode, the gate line, and the first connection line; Forming a data line, a second connection line, a voltage supply line, and a third connection line on the interlayer insulating film; Forming a protective layer on which the third connection line is exposed on the data line, the second connection line, the voltage supply line, and the third connection line; And forming an organic light emitting diode connected to the third connection line on the protection layer, wherein the first connection line is formed from the switching transistor region to the driving transistor region via the storage capacitor region, Wherein the data line is connected to the source region of the switching transistor region and the second connection line is connected to the drain region of the switching transistor region and the first connection line, The third connection line is connected to the drain region of the driving transistor region, and the source electrode of the driving transistor region is used as a resistance element.

The present invention uses a source region of a driving transistor as a resistance element to compensate a driving current according to a change in mobility or a threshold voltage of each pixel to maintain a uniform luminance.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

2 is a circuit diagram showing an organic light emitting display according to the present invention.

In the organic light emitting display, a plurality of pixels are arranged in a matrix form.

FIG. 2 representatively shows one pixel among a plurality of pixels for convenience of explanation.

As shown in Fig. 2, the switching transistor T1 is electrically connected to the gate line GL and the data line DL.

The driving transistor T2 is electrically connected to the switching transistor T1.

The storage capacitor Cst is formed between the gate terminal and the source terminal of the driving transistor T2. Further, the storage capacitor Cst is electrically connected between the switching transistor Tl and the voltage supply line VDD.

Here, the gate terminal is the gate electrode, the source terminal is the source region, and the drain terminal of the transistors T1 and T2 may be the drain region.

The resistance element Rs is electrically connected between the driving transistor T2 and the voltage supply line VDD.

The organic light emitting diode OLED is electrically connected between the driving transistor TFT2 and the ground ground.

The active layer of the switching transistor T1 and the driving transistor T2 may be formed of polycrystalline Si crystallized by excimer laser annealing of the amorphous conducting cone (a-Si).

As described above, polycrystalline silicon exists in a dense region and a small region due to the instability of the excimer laser upon irradiation of the excimer laser, and the active layers formed in the dense region and the shallow region cause the switching transistors T1 and The driving transistor T2 has different mobility and threshold voltage.

In particular, the driving current of the driving transistor T2 is directly affected by the mobility and the threshold voltage. Therefore, different driving currents are supplied to the organic light emitting diode (OLED) in the same gradation representation in the driving transistor T2 of each pixel, so that different gradations are expressed among the respective pixels, resulting in luminance unevenness.

In the present invention, since a resistance element is formed between the driving transistor T2 and the voltage supply line VDD in each pixel, the driving current of the driving transistor T2 can be compensated by the resistance element Rs to be equal to each other have.

As described above, when the resistance element Rs is formed between the driving transistor T2 and the voltage supply line VDD, the driving current I _OLED of the driving transistor T2 is expressed by the following equations (2) and Can be expressed as.

Vdata is a data voltage, V _TH is a threshold voltage, and I _D is a threshold voltage of the driving transistor T2. Here, Cox is a constant, 占 is mobility, W is the width of the active layer, L is the length of the active layer, Is the drain or source current of the transistor.

For example, it is assumed that the data voltage (Vdata_) is supplied to each pixel with the same value.

In this case, when the mobility of the driving transistor formed in the first pixel is large or the threshold voltage is small, the drain current I _D flows much because the mobility is large or the threshold voltage is small. That is, the drain current I _D becomes large. As the drain current I _D increases, I _D Rs also increases, so that Vs becomes smaller.

Therefore, V's-Vdata becomes small, and consequently, the driving current I _OLED can be compensated to be small.

On the other hand, when the mobility of the driving transistor formed in the second pixel is small or the threshold voltage is large, the drain current I _D flows less because the mobility is small or the threshold voltage is large. That is, the drain current I _D becomes small. As the drain current I _D becomes smaller, I _D Rs also becomes smaller, so that Vs becomes larger.

Therefore, Vs-Vdata becomes large, and consequently, the driving current I _OLED can be compensated to become large.

As a result, even if the mobility or threshold voltage of the driving transistor of each pixel is different, light of substantially the same luminance can be generated in each pixel as the driving current is compensated by the resistance element Rs. Therefore, since the light of the same luminance is generated for the same data voltage regardless of the mobility or the threshold voltage of the driving transistor formed in each pixel of the organic light emitting diode display, luminance uniformity can be improved.

FIGS. 3A to 3C illustrate an OLED display according to a first embodiment of the present invention. 3A is a plan view showing two adjacent pixels, FIG. 3B is a cross-sectional view of the unit pixel of FIG. 3A, FIG. 3C is a cross-sectional view of the gate electrode, the gate electrode, the active layer, the source region, And is a plan view showing a plurality of contact holes.

3A to 3C, polycrystalline silicon is patterned on a substrate 1 to form a first active layer 3 in a switching transistor region and a second active layer 15 in a driving transistor region.

The first and second active layers 3 and 15 are selectively doped to form source regions 5 and 17 and drain regions 7 and 17 in both edge regions of the first and second active layers 3 and 15, , 19). That is, the source region 5 and the drain region 7 are formed in both edge regions of the first active layer 3 in the switching transistor region, and source regions 5 and drain regions 7 are formed in both edge regions of the second active layer 15 in the driving transistor region. The region 17 and the drain region 19 are formed.

At this time, the doping material may be boron or phosphorous. The amount of doping may range from 1.0E14 to 6.0E14 for both boron and phosphorus.

In the present invention, the source region 17 of the driving transistor T2 can be used as a resistance element. The source region 17 of the driving transistor T2 extends from the second active layer 15 to the voltage supply line 33 to be described later in parallel to the gate line and is bent at the voltage supply line 33, May extend to a predetermined range along the first direction (33). The predetermined range may be 1/2 to 3 times the minor axis length of the pixel formed to be parallel to the voltage supply line 33 described later. Here, in the present invention, a pixel parallel to a gate line can be defined as a short axis, and a pixel parallel to a data line can be defined as a long axis.

The present invention increases the length of the source region 17 of the driving transistor T2 so as to have resistance performance. As is widely known, the resistance increases as the length of the conductive member increases.

In the present invention, the source region 17 of the driving transistor T2 may have a resistance value in the range of 10 k? To 100 k ?.

On the other hand, the resistance of the source region 17 of the driving transistor T2 may be determined by the doped dose. For example, as the dose amount of the source region 17 becomes smaller, the resistance increases.

The present invention can increase the length of the source region 17 of the driving transistor T2 to form a resistance element.

Further, in the present invention, the resistance element can be formed by reducing the dose amount of the source region 17 of the driving transistor T2.

In addition, the present invention can form a resistance element by adjusting the length and the dose of the source region 17 of the driving transistor T2.

A gate insulating film 9 (referred to as a first insulating film) is formed on the active layer, the source regions 5 and 17 and the drain regions 17 and 19. Gate electrodes 11 and 21, The gate line 10 and the first connection line 25 are formed. The first connection line 25 may be formed from the switching transistor region to the driving transistor region.

Therefore, the switching transistor T1 is formed by the gate electrode 11, the first active layer 3, the source region 5 and the drain region 7, and the gate electrode 21, the second active layer 15 ), The source region 17 and the drain region 19 can be formed.

An interlayer insulating film 27 (referred to as a second insulating film) is formed and patterned on the gate electrodes 11 and 21, the gate line 10 and the first connecting line 25 to form source contact holes 12a in the switching transistor region, A drain contact hole 12b and a first connection contact hole 12c and a source contact hole 12d and a drain contact hole 12e in the driving transistor region.

In the switching transistor region, the source contact hole 12a is formed to expose the source region 5, the drain contact hole 12b is formed to expose the drain region 7, and the first connection contact hole 12c is formed 1 connection line 25 may be exposed. The source contact hole 12d may be formed to expose the source region 17 and the drain contact hole 12e may be formed to expose the drain region 19 in the driving transistor region.

A data line 29, a second connection line 31, a voltage supply line 33, and a third connection line 37 are formed on the interlayer insulating film 27.

The data lines 29 may be formed so as to intersect the gate lines 10. A pixel can be defined by the intersection of the gate line 10 and the data line 29.

The data line 29 may be electrically connected to the source region 5 through the source contact hole 12a in the switching transistor region.

The second connection line 31 is electrically connected to the drain region 7 through the drain contact hole 12b in the switching transistor region and electrically connected to the first connection line 25 and the drain region 7 through the first connection contact hole 12c. And can be electrically connected.

The voltage supply line 33 is electrically connected to the source region 17 through the source contact hole 12d in the driving transistor region and parallel to the gate line 10 so as to intersect with and overlap the first connection line 25. [ .

Therefore, the overlapped voltage supply line 33 and the first connection line 25 can form the storage capacitor Cst with the interlayer insulating film 27 therebetween.

The third connection line 37 may be electrically connected to the drain region 19 through the drain contact hole 12e in the driving transistor region.

The third connection line 37 electrically connects the drain region 19 of the driving transistor T2 and the anode electrode 41 of the organic light emitting diode 47 to be described later.

A protective layer 39 is formed and patterned on the data line 29, the second connection line 31, the voltage supply line 33 and the third connection line 37 to form a second connection contact hole in the driving transistor region . The second connection contact hole may be formed such that the third connection line 37 is exposed.

The anode electrode 41 is formed on the protective layer 39 of the pixel region so as to be electrically connected to the third connection line 37 through the second connection contact hole. The pixel region is a region where the organic light emitting layer 43 to be described later is formed.

A bank layer 42 is formed on the edge region of the anode electrode 41 and on the protective layer 39. The bank layer 42 may be formed not only to separate the pixel region but also to prevent the high voltage from being concentrated on the edge region of the anode electrode 41 to be damaged.

An organic light emitting layer 43 is formed on the anode electrode 41. The organic light emitting layer 43 includes a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer formed for each pixel.

The organic light emitting layer 43 may be formed only on the anode electrode 41 or may be formed on the edge regions of the anode electrode 41 and the bank layer 42 as shown in FIG.

A cathode electrode 45 is formed on the bank layer 42 and the organic light emitting layer 43. The cathode electrode 45 may be formed integrally and in common with all of the pixels.

7 is a diagram showing a change in mobility according to the length of the source region of the driving transistor.

In this experiment, mobility of 50 samples was measured at a length of 1 탆 to 16 탆 in a source region.

As shown in Fig. 7 and the following Table 1, as the length of the source region of the driving transistor increases, the mobility decreases.

However, as shown in Table 1 below, it can be seen that the mobility deviation with respect to the length of the source region of 4 mu m, 8 mu m and 12 mu m, respectively, decreases as the length of the source region of the driving transistor increases. Therefore, as the length of the source region of the driving transistor increases, the mobility is hardly changed, thereby ensuring the luminance uniformity of each pixel.

Length of source region [탆] 4 8 12 Mobility Average [cm2 / Vs] 22.51 21.08 19.82 Deviation[%] 2.42 2.08 1.89

As described above, according to the present invention, by increasing the length of the source electrode of the driving transistor and using it as a resistance element, the driving current can be compensated regardless of the mobility of the driving transistor or the change in the threshold voltage, .

4A to 4D are process diagrams illustrating a manufacturing process of the OLED display according to the first embodiment of the present invention.

4A, polycrystalline silicon is formed on the substrate 1 and patterned to form the first active layer 3 in the switching transistor region and the second active layer 15 in the driving transistor region .

That is, amorphous silicon is formed on the substrate 1, and amorphous silicon is annealed using an excimer laser to crystallize the amorphous silicon into polycrystalline silicon. Next, the polycrystalline silicon is patterned to form the first and second active layers 3 and 15 in the switching transistor region and the driving transistor region, respectively.

The edge regions of the first and second active layers 3 and 15 are selectively doped so that the source regions 5 and 17 and the drain region 5 are formed in both edge regions of the first and second active layers 3 and 15, (7, 19). Thus, the center regions of the undoped first and second active layers 3 and 15 are held as an active layer as they are, and both edge regions of the doped first and second active layers 3 and 15 are held in the source region 5 and 17 and drain regions 7 and 19, respectively.

At this time, the doping material may be boron or phosphorous. The amount of doping may range from 1.0E14 to 6.0E14 for both boron and phosphorus. The concentration and resistance of the doping dose may have an inverse relationship. That is, as the doping dose increases, the resistance decreases, and as the doping dose decreases, the resistance increases.

In the present invention, the source region 17 of the driving transistor can be used as a resistance element.

Therefore, the source region 17 of the driving transistor can be used as a resistance element by adjusting the dose amount of the source region 17 and the drain region 19 to be a desired resistance value.

Further, the source region 17 of the driving transistor of the present invention may be formed to extend to a predetermined range. The predetermined range may have a range of 1/2 to 3 times the short axis length of the pixel.

The present invention increases the length of the source region 17 of the driving transistor so as to have resistance performance. As is widely known, the resistance increases as the length of the conductive member increases.

In the present invention, the source region 17 of the driving transistor may have a resistance ranging from 10 k? To 100 k ?.

Therefore, the present invention can increase the length of the source region 17 of the driving transistor to form a resistance element.

Further, the present invention can reduce the dose amount of the source region 17 of the driving transistor to form a resistance element.

In addition, the present invention can form a resistance element by adjusting the length and the dose of the source region 17 of the driving transistor.

A first insulating film 9 is formed by forming a first insulating material on the first and second active layers 3 and 15, the source regions 5 and 17 and the drain regions 7 and 19, The first metal material is formed on the gate electrode 9 and the first metal material is patterned to form the gate electrodes 11 and 21, the gate line 10 and the first connection line 25. The gate electrodes 11 and 21 are connected to the first insulating film 9 corresponding to the first active layer 3 of the switching transistor region and the first insulating film 9 corresponding to the second active layer 15 of the driving transistor region, Lt; / RTI > The first connection line 25 may be formed from the switching transistor region to the driving transistor region in parallel to the data line 29 to be described later.

A switching transistor is formed by the gate electrode 11, the first active layer 3, the source region 5 and the drain region 7 and the gate electrode 21, the second active layer 15, The driving transistor can be formed by the region 17 and the drain region 19. [

A second insulating film 27 is formed by forming a second insulating material on the gate electrodes 11 and 21, the gate line 10 and the first connecting line 25 as shown in FIG. 4B, A source contact hole 12a, a drain contact hole 12b and a first connection contact hole 12c are formed in the switching transistor region by patterning the insulating film 27. The source contact hole 12d and drain The contact hole 12e can be formed.

In the switching transistor region, the source contact hole 12a is formed to expose the source region 5, the drain contact hole 12b is formed to expose the drain region 7, and the first connection contact hole 12c is formed 1 connection line 25 may be exposed. The source contact hole 12d may be formed to expose the source region 17 and the drain contact hole 12e may be formed to expose the drain region 19 in the driving transistor region.

The second metal material is formed on the second insulating film 27 and the second metal material is patterned to form the data line 29, the second connecting line 31, the voltage supplying line 33, 37 are formed.

The data line 29 may be electrically connected to the source region 5 through the source contact hole 12a of the switching transistor region.

The second connection line 31 is electrically connected to the drain region 7 through the drain contact hole 12b of the switching transistor region and electrically connected to the first connection line 25 through the first connection contact hole 12c .

The voltage supply line 33 is electrically connected to the source region 17 through the source contact hole 12d of the driving transistor region and is parallel to the gate line 10 so as to intersect with and overlap the first connection line 25 .

Therefore, the overlapped voltage supply line 33 and the first connection line 25 can form the storage capacitor Cst with the second insulating film 27 therebetween.

The third connection line 37 may be electrically connected to the drain region 19 through the drain contact hole 12e of the driving transistor region.

The data lines 29 may be formed so as to intersect the gate lines 10. A pixel can be defined by the intersection of the gate line 10 and the data line 29.

The pixel of the present invention can be divided into a switching transistor region, a storage capacitor region, a driving transistor region, and a pixel region.

A third insulating material is formed on the data line 29, the second connecting line 31, the voltage supplying line 33 and the third connecting line 37 as shown in FIG. 4C, And a third insulating film 39 having a second connection contact hole 40 is formed in the driving transistor region. The second connection contact hole 40 may be formed such that the third connection line 37 is exposed.

A third metal material is formed on the fourth insulating film 42 and is patterned to form a third insulating film 39 on the third insulating film 39 in the pixel region through ohmic contact electrically connected to the third connecting line 37 through the second connecting contact hole 40 And the node electrode 41 is formed.

A fourth insulating material is formed on the anode electrode 41 and patterned to form a fourth insulating film 42 on the edge region of the anode electrode 41 and the third insulating film 39.

An organic material that selectively generates color light is deposited on the anode electrode 41 to form an organic light emitting layer 43. A hard mask may be used for deposition of the organic material.

A fourth metal material is formed on the fourth insulating layer 42 and the organic light emitting layer 43 to form the cathode electrode 45. The cathode electrode 45 may be formed integrally and in common with all of the pixels.

In the above description, the first insulating film 9 is a gate insulating film, the second insulating film 27 is an interlayer insulating film, the third insulating film 39 is a protective layer, and the fourth insulating film 42 is a bank layer. The second to fourth insulating films 42 may be an organic material such as polyimide or BCB, or an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx).

The organic light emitting display manufactured by the manufacturing process as described above increases the length of the source electrode of the driving transistor and uses it as a resistance element to compensate the driving current regardless of the mobility of the driving transistor or the threshold voltage, A uniform luminance can be maintained.

5A and 5B are views illustrating an organic light emitting display according to a second embodiment of the present invention.

The structure and manufacturing process of the second embodiment of the present invention are almost the same as those of the first embodiment of the present invention described above.

However, in the second embodiment of the present invention, the source region 17 'of the driving transistor extends from the second active layer 15 in parallel to the gate line 10 to the voltage supply line 33 disposed in the adjacent pixel .

In this way, the length of the source region 17 'of the driving transistor can be increased as the resistance element by increasing the length from the second active layer 15 to the voltage supply line 33 of the adjacent pixel.

At this time, the source region 17 'of the driving transistor may be electrically connected to the voltage supply line 33 of the adjacent pixel through the contact hole.

6A and 6B illustrate an OLED display according to a third embodiment of the present invention.

The structure and manufacturing process of the third embodiment of the present invention are almost the same as those of the first embodiment of the present invention described above.

However, in the third embodiment of the present invention, the source region 17 "of the driving transistor is formed at least narrower than the second active layer 15, and the second active layer 15 to the voltage supply line 33 As shown in FIG.

Typically, the line width and resistance value may have an inverse relationship. That is, as the width of the line becomes narrower, the resistance value becomes larger.

Therefore, in the third embodiment of the present invention, the length of the source region 17 "of the driving transistor is increased while the width of the source region 17 " is narrower than the width of the second active layer 15 and can be used as a resistance element. Therefore, by adjusting the length and width of the source region 17 "simultaneously, the width of the source region 17" is narrowed even if the length of the source region 17 "is somewhat smaller than that of the first embodiment of the present invention, It is possible to have the same resistance value as the source region 17 of the first embodiment of FIG.

If necessary, the source region 17 "of the driving transistor of the third embodiment of the present invention may be formed to extend to a predetermined range. The predetermined range may be a range of 1/2 to 3 times the short axis length of the pixel Lt; / RTI >

1 is a circuit diagram showing a unit pixel of a conventional organic light emitting diode display.

2 is a circuit diagram showing an organic light emitting display according to the present invention.

FIGS. 3A to 3C illustrate an OLED display according to a first embodiment of the present invention.

4A to 4D are process diagrams illustrating a manufacturing process of the OLED display according to the first embodiment of the present invention.

5A and 5B are views illustrating an organic light emitting display according to a second embodiment of the present invention.

6A and 6B illustrate an OLED display according to a third embodiment of the present invention.

7 is a diagram showing a change in mobility according to the length of the source region of the driving transistor.

Description of the Related Art

1: substrate 3, 15: active layer

5, 17: source region 7, 19: drain region

9: gate insulating film 10: gate line

11, 21: gate electrode 13: switching transistor

23: driving transistor 25: first connection line

27: interlayer insulating film 29: data line

31: second connection line 33: voltage supply line

37: third connection line 39: protective layer

41: anode electrode 42: bank layer

43: organic light emitting layer 45: cathode electrode

47: Organic Light Emitting Diode

Claims (9)

A plurality of pixels arranged in a matrix, Each of the pixels includes: A switching transistor connected to the gate line and the data line; A driving transistor connected between the switching transistor and the voltage supply line; A storage capacitor coupled between the switching transistor and the voltage supply line; An organic light emitting diode connected to the driving transistor; And And a resistance element formed between the voltage supply line and the driving transistor and formed from a source region of the driving transistor, Wherein the resistance element extends from an active layer of the driving transistor to a voltage supply line of an adjacent pixel. The organic light emitting diode display according to claim 1, wherein the resistance element formed from the source region of the driving transistor has a range of 1/2 to 3 times the short axis length of the pixel. delete The OLED display of claim 1, wherein the resistance element is at least narrower than an active layer of the driving transistor and extends from an active layer of the driving transistor to the voltage supply line. The OLED display according to claim 1, wherein the resistance element has a resistance value ranging from 10 k? To 100 k ?. A plurality of pixels arranged in a matrix, each pixel including a switching transistor region, a storage capacitor region, a driving transistor region, and a pixel region, Forming an active layer, a source region, and a drain region on the substrate of each of the switching transistor region and the driving transistor region; Forming a gate insulating film on the substrate; Forming a gate electrode, a gate line, and a first connection line on the gate insulating film; Forming an interlayer insulating film in which the source region, the drain region, and the first connection line are exposed on the gate electrode, the gate line, and the first connection line; Forming a data line, a second connection line, a voltage supply line, and a third connection line on the interlayer insulating film; Forming a protective layer on which the third connection line is exposed on the data line, the second connection line, the voltage supply line, and the third connection line; And forming an organic light emitting diode connected to the third connection line on the protection layer, Wherein the first connection line is formed from the switching transistor region to the driving transistor region via the storage capacitor region, Wherein the data line is connected to the source region of the switching transistor region and the second connection line is connected to the drain region of the switching transistor region and the first connection line, And the third connection line is connected to a drain region of the driving transistor region, Wherein the source electrode of the driving transistor region is used as a resistance element. 7. The method according to claim 6, wherein the resistance element has a length that is 1/2 to 3 times the short axis length of the pixel. 7. The method according to claim 6, wherein the resistance element is extended from an active layer of the driving transistor region to a voltage supply line of an adjacent pixel. 7. The organic light emitting diode display as claimed in claim 6, wherein the resistance element is at least narrower than the active layer of the driving transistor region and extends from the active layer of the driving transistor region to the voltage supply line. Way.

Images