KR20090119599A - Organic electro-luminescence display device and manufacturing method thereof - Google Patents

Abstract

PURPOSE: An Organic light emitting display device and a manufacturing method thereof are provided to improve luminance uniformity by arranging a resistor in a source terminal of a driving transistor. CONSTITUTION: A plurality of pixels is arranged with a matrix shape. Each pixel includes a switching transistor(T1), a driving transistor(T2), a storage capacitor(Cst), an OLED, and a resistor(Rs). The switching transistor is connected to a gate line(GL) and a data line(DL). The driving transistor is connected between the switching transistor and a voltage supply line. The storage capacitor is connected between the switching transistor and the voltage supply line. The OLED is connected to the driving transistor. The resistor is connected between the voltage supply line and the driving transistor, and is formed from a source region of the driving transistor.

Description

Organic electroluminescent display device and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which can improve luminance uniformity.

Due to the development of the information society, display devices capable of displaying information have been actively developed. The display device includes a liquid crystal display device, an organic electro-luminescence display device, a plasma display panel, and a field emission display device.

Among them, the organic light emitting display device generates light by itself without using a backlight unit that generates light, unlike a liquid crystal display device, and thus a light and small size is possible because the backlight unit is not required.

In addition, the organic light emitting display device has advantages such as a simple process and a low manufacturing cost since no liquid crystal is used like the liquid crystal display device.

1 is a circuit diagram illustrating a unit pixel of a conventional organic light emitting display device.

In the OLED display, a plurality of pixels may be arranged in a matrix form. For convenience of description, one pixel of the plurality of pixels is representatively illustrated in FIG. 1.

As shown in FIG. 1, the switching transistor TFT1 is electrically connected to the gate line GL and the data line DL.

The driving transistor TFT2 is electrically connected to the switching transistor TFT1 and the voltage supply line VDD.

The storage capacitor Cst is formed between the gate terminal and the source terminal of the driving transistor TFT2. In addition, the storage capacitor Cst is electrically connected between the switching transistor TFT1 and the voltage supply line VDD.

The organic light emitting diode OLED is electrically connected between the driving transistor TFT2 and the ground ground.

Accordingly, the switching transistor TFT1 is turned on by the selection signal supplied to the gate line GL, and the data voltage supplied to the data line DL is supplied to the driving transistor TFT2 via the switching transistor TFT1.

The driving transistor TFT supplies a driving current I _OLED as shown in Equation 1 to the organic light emitting diode OLED. Accordingly, the organic light emitting diode OLED generates light having a luminance corresponding to the driving current I _OLED .

Where Cox is a constant, μp is mobility, W is the width of the active layer, L is the length of the active layer, Vdata is the data voltage, and V _TH is the threshold voltage.

In order to increase the mobility of the active layer of the driving transistor TFT2, polycrystalline Si obtained by crystallizing amorphous silicon (a-Si) by excimer laser annealing may be formed.

As described above, when annealing by the excimer laser, the excimer laser instability causes the laser irradiated region (dense region) and the other region (small region) on the substrate of the organic light emitting display device.

In this case, the driving characteristics of the driving transistor formed in the dense area and the driving transistor formed in the small area are different. That is, the driving transistor formed in the dense area has a high mobility and the threshold voltage is low, whereas the driving transistor formed in the small area has a low mobility and a threshold voltage.

As such, as the mobility and the threshold voltage of the driving transistors of each pixel are different from each other, even if the same data voltage is supplied to each pixel, different driving currents I _OLED are supplied to the organic light emitting diode OLED, and eventually, each other. Different luminance results in luminance unevenness.

It is an object of the present invention to provide an organic light emitting display device and a method of manufacturing the same, which can improve luminance uniformity by adding a resistance element to a source terminal of a driving transistor.

According to a first embodiment of the present invention, an organic light emitting display device includes a plurality of pixels arranged in a matrix, each pixel comprising: a switching transistor connected to a gate line and a data line; A driving transistor connected between the switching transistor and a voltage supply line; A storage capacitor connected between the switching transistor and the voltage supply line; An organic light emitting diode connected to the driving transistor; And a resistance element formed from a source region of the driving transistor between the voltage supply line and the driving transistor.

According to a second embodiment of the present invention, a method of manufacturing an organic light emitting display device includes a plurality of pixels arranged in a matrix, each pixel including a switching transistor region, a storage capacitor region, a driving transistor region, and a pixel region. Forming an active layer, a source region, and a drain region on each of the substrates of the switching transistor region and the driving transistor region; Forming a gate insulating film on the substrate; Forming a gate electrode, a gate line, and a first connection line on the gate insulating film; Forming an interlayer insulating layer on the gate electrode, the gate line, and the first connection line to expose the source region, the drain region, and the first connection line; Forming a data line, a second connection line, a voltage supply line, and a third connection line on the interlayer insulating film; Forming a protective layer exposing the third connection line on the data line, the second connection line, the voltage supply line, and the third connection line; And forming an organic light emitting diode connected to the third connection line on the protective layer, wherein the first connection line is formed from the switching transistor region to the driving transistor region via the storage capacitor region. The data line is connected to the source region of the switching transistor region, the second connection line is connected to the drain region of the switching transistor region and the first connection line, and the voltage supply line is connected to the source region of the driving transistor region. The third connection line is connected to the drain region of the driving transistor region, and the source electrode of the driving transistor region is used as a resistance element.

According to the present invention, the source region of the driving transistor is used as a resistance element to compensate for the driving current according to the change in mobility or threshold voltage of each pixel, thereby maintaining uniform luminance.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.

2 is a circuit diagram illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

In the OLED display, a plurality of pixels are arranged in a matrix form.

2 representatively illustrates one pixel among a plurality of pixels for convenience of description.

As shown in FIG. 2, the switching transistor T1 is electrically connected to the gate line GL and the data line DL.

The driving transistor T2 is electrically connected to the switching transistor T1.

The storage capacitor Cst is formed between the gate terminal and the source terminal of the driving transistor T2. In addition, the storage capacitor Cst is electrically connected between the switching transistor T1 and the voltage supply line VDD.

The gate terminal may be a gate electrode, the source terminal may be a source region, and the drain terminals of the transistors T1 and T2 may be drain regions.

The resistor element Rs is electrically connected between the driving transistor T2 and the voltage supply line VDD.

The organic light emitting diode OLED is electrically connected between the driving transistor TFT2 and ground.

The active layers of the switching transistor T1 and the driving transistor T2 may be formed of polycrystalline Si crystallized by excimer laser annealing of the amorphous implementation cone (a-Si).

As described above, due to the instability of the excimer laser during irradiation of the excimer laser, the polycrystalline silicon has a dense region and a small region. The driving transistor T2 has different mobility and threshold voltages.

In particular, the driving current of the driving transistor T2 is directly influenced by the mobility and the threshold voltage. Accordingly, different driving currents are supplied to the driving transistor T2 of each pixel when the same gray scale is expressed, and thus different gray scales are expressed between the pixels, causing uneven brightness.

According to the present invention, as the resistance element is formed between the driving transistor T2 and the voltage supply line VDD in each pixel, the driving current of the driving transistor T2 may be compensated to be the same by the resistance element Rs. have.

As such, when the resistance element Rs is formed between the driving transistor T2 and the voltage supply line VDD, the driving current I _OLED of the driving transistor T2 is represented by Equations 2 and 3 below. Can be expressed as:

Where Cox is a constant, μp is mobility, W is the width of the active layer, L is the length of the active layer, Vdata is the data voltage, V _TH is the threshold voltage, and I _D is the driving transistor T2. Is the drain or source current.

For example, it is assumed that the data voltage Vdata_ is supplied with the same value to each pixel.

In this case, when the mobility of the driving transistor formed in the first pixel is large or the threshold voltage is small, the drain current I _D flows because the mobility is large or the threshold voltage is small. That is, the drain current I _D becomes large. As the drain current I _D increases, I _D Rs also increases, whereby V's decreases.

Therefore, V's-Vdata becomes small, and can be compensated so that the driving current I _OLED eventually becomes small.

On the other hand, when the mobility of the driving transistor formed in the second pixel is small or the threshold voltage becomes large, the drain current I _D flows less because the mobility is small or the threshold voltage becomes large. In other words, the drain current I _D becomes small. As the drain current I _D decreases, I _D Rs also decreases, thereby increasing V's.

Therefore, V's-Vdata becomes large, and thus can be compensated for so that the driving current I _OLED becomes large.

As a result, even though the mobility or threshold voltage of the driving transistors of each pixel is different, light of substantially the same luminance may be generated in each pixel as the driving current is compensated by the resistance element Rs. Therefore, since light of the same luminance is generated for the same data voltage regardless of the mobility or threshold voltage of the driving transistor formed in each pixel of the organic light emitting display, luminance uniformity can be improved.

3A to 3C illustrate an organic light emitting display device according to a first embodiment of the present invention. That is, FIG. 3A is a plan view illustrating two adjacent pixels, FIG. 3B is a cross-sectional view illustrating the unit pixel of FIG. 3A, and FIG. 3C is a gate electrode, a gate electrode, an active layer, a source region, a drain region, and a drain region of FIG. A plan view illustrating a plurality of contact holes.

3A to 3C, polycrystalline silicon is patterned on the substrate 1 to form the first active layer 3 in the switching transistor region and the second active layer 15 in the driving transistor region.

Selectively doping the first and second active layers 3 and 15 to source and drain regions 5 and 17 and drain regions 7 at both edge regions of each of the first and second active layers 3 and 15. , 19). That is, the source region 5 and the drain region 7 are formed in both edge regions of the first active layer 3 of the switching transistor region, and the source region is formed in both edge regions of the second active layer 15 of the driving transistor region. The region 17 and the drain region 19 are formed.

In this case, the doping material may be boron or phosphorous. The doping dose may be in the range of 1.0E14 to 6.0E14 for both boron and phosphorus.

In the present invention, the source region 17 of the driving transistor T2 may be used as a resistor. The source region 17 of the driving transistor T2 extends from the second active layer 15 to the voltage supply line 33 which will be described later, in parallel with the gate line, and is bent in the voltage supply line 33 to supply the voltage. It may be formed to extend to a predetermined range along the (33). The predetermined range may be 1/2 to 3 times the short axis length of the pixel formed parallel to the voltage supply line 33 described later. Here, in the present invention, a pixel parallel to the gate line may be defined as a short axis, and a pixel parallel to the data line may be defined as a long axis.

The present invention increases resistance of the source region 17 of the driving transistor T2. As is well known, the resistance increases as the length of the conductive member increases.

In the present invention, the source region 17 of the driving transistor T2 may have a resistance value in the range of 10 kV to 100 kV.

Meanwhile, the resistance of the source region 17 of the driving transistor T2 may be determined by the doped dose. For example, as the dose amount of the source region 17 decreases, the resistance increases.

According to the present invention, the resistance element may be formed by increasing the length of the source region 17 of the driving transistor T2.

In addition, according to the present invention, the resistance element can be formed by reducing the dose of the source region 17 of the driving transistor T2.

In addition, according to the present invention, the resistance element may be formed by adjusting the length and dose of the source region 17 of the driving transistor T2.

A gate insulating film 9 (referred to as a first insulating film) is formed on the active layer, the source regions 5 and 17 and the drain regions 17 and 19, and the gate electrodes 11 and 21 on the gate insulating film 9; The gate line 10 and the first connection line 25 are formed. The first connection line 25 may be formed from the switching transistor region to the driving transistor region.

Accordingly, the switching transistor T1 is formed by the gate electrode 11, the first active layer 3, the source region 5, and the drain region 7, and the gate electrode 21 and the second active layer 15 are formed. ), The driving transistor T2 may be formed by the source region 17 and the drain region 19.

An interlayer insulating film 27 (referred to as a second insulating film) is formed on the gate electrodes 11 and 21, the gate line 10, and the first connection line 25, and patterned to form a source contact hole 12a in the switching transistor region. The drain contact hole 12b and the first connection contact hole 12c may be formed, and the source contact hole 12d and the drain contact hole 12e may be formed in the driving transistor region.

In the switching transistor region, the source contact hole 12a is formed to expose the source region 5, the drain contact hole 12b is formed to expose the drain region 7, and the first connection contact hole 12c is formed to be exposed. 1 may be formed so that the connection line 25 is exposed. In the driving transistor region, the source contact hole 12d may be formed to expose the source region 17, and the drain contact hole 12e may be formed to expose the drain region 19.

The data line 29, the second connection line 31, the voltage supply line 33, and the third connection line 37 are formed on the interlayer insulating layer 27.

The data line 29 may be formed to cross the gate line 10. The pixel may be defined by the intersection of the gate line 10 and the data line 29.

The data line 29 may be electrically connected to the source region 5 through the source contact hole 12a in the switching transistor region.

The second connection line 31 is electrically connected to the drain region 7 through the drain contact hole 12b in the switching transistor region, and is connected to the first connection line 25 through the first connection contact hole 12c. Can be electrically connected.

The voltage supply line 33 is electrically connected to the source region 17 through the source contact hole 12d in the driving transistor region, while being parallel to the gate line 10 so as to overlap and overlap the first connection line 25. Can be formed.

Accordingly, the overlapped voltage supply line 33 and the first connection line 25 may form the storage capacitor Cst with the interlayer insulating layer 27 interposed therebetween.

The third connection line 37 may be electrically connected to the drain region 19 through the drain contact hole 12e in the driving transistor region.

The third connection line 37 electrically connects the drain region 19 of the driving transistor T2 and the anode electrode 41 of the organic light emitting diode 47 to be described later.

The second connection contact hole is formed in the driving transistor region by forming and patterning a protective layer 39 on the data line 29, the second connection line 31, the voltage supply line 33, and the third connection line 37. Form. The second connection contact hole may be formed to expose the third connection line 37.

The anode electrode 41 is formed on the passivation layer 39 of the pixel region to be electrically connected to the third connection line 37 through the second connection contact hole. The pixel region is a region in which the organic light emitting layer 43 to be described later is formed.

The bank layer 42 is formed on the edge region of the anode electrode 41 and the protective layer 39. The bank layer 42 may be formed not only to distinguish the pixel region but also to prevent damage due to the high voltage concentrated on the edge region of the anode electrode 41.

The organic light emitting layer 43 is formed on the anode electrode 41. The organic light emitting layer 43 includes a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer formed for each pixel.

The organic light emitting layer 43 may be formed only on the anode electrode 41, or may be formed in the edge region of the anode electrode 41 and the bank layer 42, as shown in FIG. 3B.

The cathode electrode 45 is formed on the bank layer 42 and the organic light emitting layer 43. The cathode electrode 45 may be formed in common and integrally with all the pixels.

7 is a diagram illustrating a change in mobility according to the length of a source region of a driving transistor.

In this experiment, we tested the mobility of 50 samples in the length of the source region of 1㎛ 16㎛.

As shown in FIG. 7 and Table 1, as the length of the source region of the driving transistor increases, the mobility decreases.

However, as shown in Table 1, it can be seen that the mobility deviation with respect to the length of the source region of 4 μm, 8 μm, and 12 μm, respectively, decreases as the length of the source region of the driving transistor increases. Therefore, as the length of the source region of the driving transistor increases, the mobility becomes almost unchanged, thereby ensuring luminance uniformity of each pixel.

Length of source region [μm] 4 8 12 Mobility Average [cm2 / Vs] 22.51 21.08 19.82 Deviation[%] 2.42 2.08 1.89

As described above, the present invention can increase the length of the source electrode of the driving transistor to use the resistance element, thereby compensating the driving current regardless of the mobility or threshold voltage of the driving transistor to maintain uniform luminance in each pixel. .

4A to 4D are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a first exemplary embodiment of the present invention.

As shown in FIG. 4A, polycrystalline silicon is formed and patterned on the substrate 1 to form the first active layer 3 in the switching transistor region and the second active layer 15 in the driving transistor region. .

That is, amorphous silicon is formed on the substrate 1, and the amorphous silicon is annealed using an excimer laser to crystallize into polycrystalline silicon. Subsequently, the polycrystalline silicon is patterned to form first and second active layers 3 and 15 in the switching transistor region and the driving transistor region, respectively.

Selectively doping both edge regions of each of the first and second active layers 3 and 15 to provide source and drain regions 5 and 17 and drain regions at both edge regions of each of the first and second active layers 3 and 15. (7, 19) is formed. Therefore, the active layer is maintained as it is in the center region of the undoped first and second active layers 3 and 15, and both edge regions of the doped first and second active layers 3 and 15 are formed as source regions. 5 and 17 and drain regions 7 and 19 are ���.

In this case, the doping material may be boron or phosphorous. The doping dose may be in the range of 1.0E14 to 6.0E14 for both boron and phosphorus. The concentration of doping dose and resistance may be inversely related. That is, as the doping dose is increased, the resistance becomes smaller, and as it decreases, the resistance becomes larger.

In the present invention, the source region 17 of the driving transistor may be used as a resistance element.

Therefore, the source region 17 of the driving transistor can be used as a resistance element by adjusting the doping amounts of the source region 17 and the drain region 19 to a desired resistance value.

In addition, the source region 17 of the driving transistor of the present invention may be formed to extend to a predetermined range. The predetermined range may have a range of 1/2 to 3 times the short axis length of the pixel.

The present invention increases resistance of the source region 17 of the driving transistor. As is well known, the resistance increases as the length of the conductive member increases.

In the present invention, the source region 17 of the driving transistor may have a resistance in the range of 10 kV to 100 kV.

Therefore, the present invention can increase the length of the source region 17 of the driving transistor to form a resistance element.

In addition, the present invention can reduce the dose of the source region 17 of the driving transistor to form a resistance element.

In addition, in the present invention, the resistance element may be formed by adjusting the length and dose of the source region 17 of the driving transistor.

The first insulating layer 9 is formed by forming a first insulating material on the first and second active layers 3 and 15, the source regions 5 and 17, and the drain regions 7 and 19. A first metal material is formed on (9), and the first metal material is patterned to form gate electrodes 11 and 21, a gate line 10, and a first connection line 25. The gate electrodes 11 and 21 respectively include a first insulating layer 9 corresponding to the first active layer 3 of the switching transistor region and a first insulating layer 9 corresponding to the second active layer 15 of the driving transistor region. It can be formed on. The first connection line 25 may be formed from the switching transistor region to the driving transistor region in parallel with the data line 29 which will be described later.

Accordingly, the switching transistor is formed by the gate electrode 11, the first active layer 3, the source region 5, and the drain region 7, and the gate electrode 21, the second active layer 15, and the source are formed. The driving transistor may be formed by the region 17 and the drain region 19.

As shown in FIG. 4B, a second insulating material is formed on the gate electrodes 11 and 21, the gate line 10, and the first connection line 25 to form a second insulating layer 27. The insulating film 27 is patterned to form a source contact hole 12a, a drain contact hole 12b, and a first connection contact hole 12c in the switching transistor region, and a source contact hole 12d and a drain in the driving transistor region. The contact hole 12e may be formed.

In the switching transistor region, the source contact hole 12a is formed to expose the source region 5, the drain contact hole 12b is formed to expose the drain region 7, and the first connection contact hole 12c is formed to be exposed. 1 may be formed so that the connection line 25 is exposed. In the driving transistor region, the source contact hole 12d may be formed to expose the source region 17, and the drain contact hole 12e may be formed to expose the drain region 19.

A second metal material is formed on the second insulating layer 27, and the second metal material is patterned to form a data line 29, a second connection line 31, a voltage supply line 33, and a third connection line ( 37).

The data line 29 may be electrically connected to the source region 5 through the source contact hole 12a of the switching transistor region.

The second connection line 31 is electrically connected to the drain region 7 through the drain contact hole 12b of the switching transistor region and electrically connected to the first connection line 25 through the first connection contact hole 12c. Can be connected.

The voltage supply line 33 is electrically connected to the source region 17 through a source contact hole 12d of the driving transistor region, and is parallel to the gate line 10 so as to overlap and overlap the first connection line 25. Can be formed.

Therefore, the overlapped voltage supply line 33 and the first connection line 25 may form the storage capacitor Cst with the second insulating layer 27 interposed therebetween.

The third connection line 37 may be electrically connected to the drain region 19 through the drain contact hole 12e of the driving transistor region.

The data line 29 may be formed to cross the gate line 10. The pixel may be defined by the intersection of the gate line 10 and the data line 29.

The pixel of the present invention may be divided into a switching transistor region, a storage capacitor region, a driving transistor region, and a pixel region.

As shown in FIG. 4C, a third insulating material is formed on the data line 29, the second connection line 31, the voltage supply line 33, and the third connection line 37, and the second insulating material is formed. Patterning to form a third insulating film 39 having a second connection contact hole 40 in the driving transistor region. The second connection contact hole 40 may be formed to expose the third connection line 37.

A third metal material is formed and patterned on the fourth insulating layer 42 to be electrically connected to the third connection line 37 through the second connection contact hole 40 on the third insulating layer 39 of the pixel region. The node electrode 41 is formed.

A fourth insulating material is formed on the anode electrode 41 and patterned to form a fourth insulating film 42 on the edge region of the anode electrode 41 and the third insulating film 39.

An organic light emitting layer 43 is formed by depositing an organic material selectively generating color light on the anode electrode 41. Hard masks may be used for the deposition of organic materials.

The fourth metal material is formed on the fourth insulating layer 42 and the organic light emitting layer 43 to form the cathode electrode 45. The cathode electrode 45 may be formed in common and integrally with all the pixels.

In the above description, the first insulating film 9 may be a gate insulating film, the second insulating film 27 may be an interlayer insulating film, the third insulating film 39 may be a protective layer, and the fourth insulating film 42 may be a bank layer. The second to fourth insulating layers 42 may be an organic material such as polyimide or BCB, or an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx).

The organic light emitting display device manufactured according to the above manufacturing process increases the length of the source electrode of the driving transistor and uses it as a resistance element, thereby compensating the driving current regardless of the mobility or threshold voltage of the driving transistor, thereby making it possible for each pixel. It is possible to maintain uniform luminance.

5A and 5B illustrate an organic light emitting display device according to a second embodiment of the present invention.

The second embodiment of the present invention is almost the same in structure and manufacturing process as the first embodiment of the present invention described above.

However, in the second embodiment of the present invention, the source region 17 'of the driving transistor extends from the second active layer 15 to the voltage supply line 33 disposed in the adjacent pixel in parallel with the gate line 10. Can be formed.

As such, the length of the source region 17 ′ of the driving transistor may be increased from the second active layer 15 to the voltage supply line 33 of the adjacent pixel to be used as a resistor.

In this case, the source region 17 ′ of the driving transistor may be electrically connected to the voltage supply line 33 of the adjacent pixel through a contact hole.

6A and 6B illustrate an organic light emitting display device according to a third exemplary embodiment of the present invention.

The third embodiment of the present invention is almost the same in structure and manufacturing process as the first embodiment of the present invention described above.

However, in the third embodiment of the present invention, the source region 17 ″ of the driving transistor is formed to be at least narrower than the second active layer 15, and the second active layer 15 to the voltage supply line 33 are formed. It may be formed to extend.

Typically, the width of the line and the resistance value may have an inverse relationship. In other words, the narrower the line width, the larger the resistance value.

Therefore, in the third embodiment of the present invention, the length of the source region 17 "of the driving transistor is increased while the width thereof is made narrower than the width of the second active layer 15, so that it can be used as a resistance element. Therefore, by simultaneously adjusting the length and width of the source region 17 ", the width of the source region 17" is narrowed even if the length of the source region 17 "is slightly reduced than in the first embodiment of the present invention. It is possible to have the same resistance value as the source region 17 of the first embodiment.

On the other hand, if necessary, the source region 17 "of the driving transistor of the third embodiment of the present invention may be formed to extend to a predetermined range. The predetermined range is 1/2 to 3 times the uniaxial length of the pixel. It can have

1 is a circuit diagram illustrating a unit pixel of a conventional organic light emitting display device.

2 is a circuit diagram illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

3A to 3C illustrate an organic light emitting display device according to a first embodiment of the present invention.

4A to 4D are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a first exemplary embodiment of the present invention.

5A and 5B illustrate an organic light emitting display device according to a second embodiment of the present invention.

6A and 6B illustrate an organic light emitting display device according to a third exemplary embodiment of the present invention.

7 is a diagram illustrating a change in mobility according to the length of a source region of a driving transistor.

<Explanation of symbols for the main parts of the drawings>

1: substrate 3, 15: active layer

5, 17: source region 7, 19: drain region

9: gate insulating film 10: gate line

11, 21: gate electrode 13: switching transistor

23: drive transistor 25: first connection line

27: interlayer insulating film 29: data line

31: second connection line 33: voltage supply line

37: third connection line 39: protective layer

41: anode electrode 42: bank layer

43: organic light emitting layer 45: cathode electrode

47: organic light emitting diode

Claims (9)

Including a plurality of pixels arranged in a matrix, Each pixel, A switching transistor connected to the gate line and the data line; A driving transistor connected between the switching transistor and a voltage supply line; A storage capacitor connected between the switching transistor and the voltage supply line; An organic light emitting diode connected to the driving transistor; And And a resistance element formed between the voltage supply line and the driving transistor from a source region of the driving transistor. The organic light emitting display device as claimed in claim 1, wherein the resistance element formed from the source region of the driving transistor has a range of 1/2 to 3 times the uniaxial length of the pixel. The organic light emitting display device of claim 1, wherein the resistance element extends from an active layer of the driving transistor to a voltage supply line of an adjacent pixel. The organic light emitting display device of claim 1, wherein the resistance element has a width that is at least narrower than an active layer of the driving transistor, and extends from the active layer of the driving transistor to the voltage supply line. The organic light emitting display device of claim 1, wherein the resistance element has a resistance value in a range of 10 kV to 100 kV. An organic light emitting display device comprising a plurality of pixels arranged in a matrix, wherein each pixel includes a switching transistor region, a storage capacitor region, a driving transistor region, and a pixel region. Forming an active layer, a source region and a drain region on each of the switching transistor region and the driving transistor region; Forming a gate insulating film on the substrate; Forming a gate electrode, a gate line, and a first connection line on the gate insulating film; Forming an interlayer insulating layer on the gate electrode, the gate line, and the first connection line to expose the source region, the drain region, and the first connection line; Forming a data line, a second connection line, a voltage supply line, and a third connection line on the interlayer insulating film; Forming a protective layer exposing the third connection line on the data line, the second connection line, the voltage supply line, and the third connection line; Forming an organic light emitting diode connected to the third connection line on the protective layer; The first connection line is formed from the switching transistor region to the driving transistor region via the storage capacitor region. The data line is connected to the source region of the switching transistor region, the second connection line is connected to the drain region of the switching transistor region and the first connection line, and the voltage supply line is connected to the source region of the driving transistor region. The third connection line is connected to a drain region of the driving transistor region; The source electrode of the driving transistor region is used as a resistance element manufacturing method of an organic light emitting display device. The method of claim 6, wherein the resistance element has a range of 1/2 to 3 times the uniaxial length of the pixel. The method of claim 6, wherein the resistance element extends from an active layer of the driving transistor region to a voltage supply line of an adjacent pixel. The organic light emitting display device of claim 6, wherein the resistance element has a width that is at least narrower than an active layer of the driving transistor region and extends from the active layer of the driving transistor region to the voltage supply line. Way.

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