CN112397563B - Display panel, display device and manufacturing method of display panel - Google Patents

Display panel, display device and manufacturing method of display panel Download PDF

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Publication number
CN112397563B
CN112397563B CN202011270556.4A CN202011270556A CN112397563B CN 112397563 B CN112397563 B CN 112397563B CN 202011270556 A CN202011270556 A CN 202011270556A CN 112397563 B CN112397563 B CN 112397563B
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electrode
layer
electrodes
additional
display panel
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CN112397563A (en
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张伟
陈龙
廖兵
李金钰
金广
孔超
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to a display panel, a display device and a manufacturing method of the display panel. The display panel includes a driving circuit layer, an OLED device layer, and an additional resistive layer. The driving circuit layer comprises a plurality of transistors, each transistor comprises a first electrode, a second electrode and a grid electrode, and the second electrode is connected with the positive electrode of the power supply. The OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer, the third electrode layer comprises a plurality of third electrodes which are in one-to-one correspondence with the plurality of first electrodes, and the fourth electrode layer is connected with the negative electrode of the power supply. The additional resistor layer comprises a plurality of additional resistors which are in one-to-one correspondence with at least part of the plurality of first electrodes, the additional resistors are arranged between the corresponding first electrodes and the third electrodes, and the additional resistors are respectively and electrically connected with the corresponding first electrodes and the third electrodes; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor further from the power supply.

Description

Display panel, display device and manufacturing method of display panel
Technical Field
The invention belongs to the technical field of display, and particularly relates to a display panel, a display device and a manufacturing method of the display panel.
Background
With the continuous development of electronic devices, display technology has also been rapidly developed. An Organic Light-Emitting Diode (OLED) display screen has the advantages of power saving, light weight, large visible angle, and the like, and is widely applied. The top-emission organic light emitting diode display panel generally includes a driving circuit layer and an OLED device layer disposed on the driving circuit layer, and the driving circuit of the driving circuit layer drives the OLED device layer to emit light to display an image. And the uniformity of the luminous brightness of the OLED device layer directly influences the display effect of the display screen. How to improve the uniformity of the light-emitting brightness of the OLED device layer so as to improve the display effect of the display screen has been attracting attention.
Disclosure of Invention
The invention provides a display panel, a display device and a manufacturing method of the display panel, so as to improve the display effect of the display panel.
According to a first aspect of an embodiment of the present invention, there is provided a display panel including:
a driving circuit layer including a plurality of transistors, each of the transistors including a first electrode, a second electrode, and a gate electrode, the second electrode being for connecting an anode of a power source;
the OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer, wherein the third electrode layer comprises a plurality of third electrodes which are in one-to-one correspondence with a plurality of first electrodes, and the fourth electrode layer comprises a plurality of fourth electrodes which are connected into a whole and are used for being connected with a negative electrode of a power supply;
the additional resistor layer comprises a plurality of additional resistors which are in one-to-one correspondence with at least part of the plurality of first electrodes, the additional resistors are arranged between the corresponding first electrodes and third electrodes, and the additional resistors are respectively and electrically connected with the corresponding first electrodes and third electrodes; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor further from the power supply.
In some embodiments, the thickness of the additional resistor of the plurality of additional resistors proximate to the power source is greater than the thickness of the additional resistor distal to the power source.
In some embodiments, the additional resistive material comprises TAPC.
In some embodiments, the additional resistive material is doped with a P-type dopant material.
In some embodiments, the additional resistive layer is formed using inkjet printing.
In some embodiments, the third electrode layer is an anode layer and the fourth electrode layer is a cathode layer; or alternatively, the first and second heat exchangers may be,
in some embodiments, the display panel further includes a planarization layer over the driving circuit layer, the planarization layer being provided with a plurality of openings corresponding to the plurality of first electrodes, the additional resistors being located at the openings.
According to a second aspect of the embodiment of the present invention, there is provided a display device including a power source and the display panel as described above, wherein a second electrode of the display panel is connected to a positive electrode of the power source, and a fourth electrode layer is connected to a negative electrode of the power source.
According to a third aspect of the embodiment of the present invention, there is provided a method for manufacturing a display panel, the method including:
forming a driving circuit layer; the driving circuit layer comprises a plurality of transistors, each transistor comprises a first electrode, a second electrode and a grid electrode, and the second electrode is used for being connected with a power supply;
forming an additional resistive layer on the driving circuit layer; the electrode structure comprises a plurality of additional resistors which are in one-to-one correspondence with at least part of the first electrodes, wherein the additional resistors are positioned above the corresponding first electrodes and are electrically connected with the corresponding first electrodes; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor far from the power supply;
forming an OLED device layer; the OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer; the third electrode layer comprises a plurality of third electrodes which are in one-to-one correspondence with the first electrodes, and at least part of the third electrodes are arranged on the corresponding additional resistors and are electrically connected with the corresponding additional resistors and the first electrodes; the fourth electrode layer comprises a plurality of fourth electrodes which are connected into a whole and a negative electrode which is connected with a power supply.
In some embodiments, the thickness of the additional resistor of the plurality of additional resistors closer to the power source is greater than the thickness of the additional resistor farther from the power source; or alternatively, the first and second heat exchangers may be,
the additional resistive layer is formed by means of inkjet printing.
According to the display panel and the manufacturing method thereof provided by the embodiment of the invention, the additional resistor layer is arranged in the display panel, the additional resistor layer comprises a plurality of additional resistors arranged between the corresponding first electrode and the third electrode, and the resistance value of the additional resistor close to the power supply is larger than that of the additional resistor far away from the power supply by arranging the plurality of additional resistors, so that adverse effects caused by channel modulation effect of the transistor in the driving circuit layer are improved, uniformity of screen brightness is improved, and display effect of the display panel is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic view of a display panel structure in the related art;
FIG. 2 is a partially simplified circuit diagram of a display panel of the related art;
FIG. 3 is a schematic diagram of a transistor characteristic;
fig. 4 is a schematic view showing a partial structure of a display panel structure according to an embodiment of the present invention;
FIG. 5 is a partially simplified circuit diagram of a display panel according to an embodiment of the present invention;
fig. 6 is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of apparatus and methods consistent with aspects of the invention as detailed in the accompanying claims.
The terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "a" or "an" and the like as used in the description and the claims do not denote a limitation of quantity, but rather denote the presence of at least one. "plurality" means two or more. The word "comprising" or "comprises", and the like, means that elements or items appearing before "comprising" or "comprising" are encompassed by the element or item recited after "comprising" or "comprising" and equivalents thereof, and that other elements or items are not excluded. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms "upper" and/or "lower" and the like are used for ease of description only and are not limited to one position or one spatial orientation. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
An Organic Light-Emitting Diode (OLED) display screen has the advantages of power saving, light weight, large visible angle, and the like, and is widely applied. The top-emission organic light emitting diode display panel generally includes a driving circuit layer and an OLED device layer disposed on the driving circuit layer, and the driving circuit of the driving circuit layer drives the OLED device layer to emit light to display an image. And the uniformity of the luminous brightness of the OLED device layer directly influences the display effect of the display screen.
In the related art, as shown in fig. 1-3, the top-emission display panel includes a substrate, a driving circuit layer disposed on the substrate, a flat layer 40 disposed on the driving circuit layer, and an OLED device layer disposed on the flat layer. The OLED device layer includes a plurality of spaced sub-pixels. The driving circuit layer includes pixel driving circuits corresponding to a plurality of sub-pixels. Each sub-pixel comprises a third electrode 20, an organic functional layer and a fourth electrode. The third electrodes 20 of the sub-pixels are spaced apart by a spacing structure 50. The third electrodes of the sub-pixels form third electrode layers arranged at intervals. The fourth electrodes of the sub-pixels are connected into a whole to form a fourth electrode layer. The organic functional layer includes a light emitting material layer capable of emitting light when a voltage is applied to the cathode and the anode to generate a current. Each pixel driving circuit includes at least one transistor. The transistor includes a first electrode 10, a second electrode, and a gate electrode corresponding to the third electrode 20. The planarization layer 40 is provided with a plurality of openings 41 above the first electrode 10. At least part of the third electrode 20 is provided in the opening 41 and is connected to the first electrode 10 at the opening 41. In the display panel, the current flowing through the OLED device layer is controlled by the driving circuit. Fig. 2 is a simplified circuit diagram of each sub-pixel of the OLED device layer and a corresponding pixel driving circuit thereof, where Vds is understood as a voltage across the source and drain of the transistor T of the pixel driving circuit in an operating state, voled is understood as a voltage of the OLED1 in the sub-pixel except for the fourth electrode in the operating state, and Vcathode is understood as a voltage of the fourth electrode layer (including a voltage of the fourth electrode of the sub-pixel and a voltage between the fourth electrode and the power supply) corresponding to the sub-pixel in the operating state. Please refer to the schematic diagram of the transistor shown in fig. 3, wherein I is a current curve flowing through the sub-pixel and the corresponding pixel driving circuit, and the ordinate I1b of the point a is a current of the transistor in the circuit in a saturated operation state. The abscissa V1b of point a is the voltage Vds of the transistor in the sub-pixel farther from the power supply. V2c is the voltage Vds of the transistor in the subpixel closer to the power supply. When the voltage difference Vds between the drain and the source of the transistor in the driving circuit reaches the drain-source saturation voltage, the transistor will operate in the saturation region. Since the TFT is affected by the channel modulation effect, the operating current I of the transistor operating in the saturation region increases slowly with the increase of Vds, as shown in fig. 3, which is the portion on the right side of the point a on the current curve I. There are tens of thousands or millions of subpixels for an entire panel. The current of the sub-pixel further from the power supply will flow through the fourth electrode of the sub-pixel closer to the power supply and the pixel further from the IC will consume a larger voltage drop on the cathode. In this way, vds on the transistor of the speed-limiting driving circuit far from the power supply is smaller, so that currents in the sub-pixel and the pixel driving circuit far from the power supply (such as I1b in fig. 3) are smaller than those in the sub-pixel and the pixel driving circuit close to the power supply (such as I2c in fig. 3), and brightness is different from place to place of the display panel, that is, uniformity of display brightness of the display panel is affected.
For this reason, the present application provides a display panel to improve luminance uniformity of the display panel. The display panel can be applied to electronic equipment with display functions such as mobile phones, televisions and watches. The display panel is a top-emission display panel.
The display panel may include a substrate, a driving circuit layer disposed on the substrate, an OLED device layer disposed on the driving circuit layer, and an additional resistive layer. Wherein,
the driving circuit layer comprises a plurality of transistors, each transistor comprises a first electrode, a second electrode and a grid electrode, and the second electrode is used for being connected with the positive electrode of a power supply.
The OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer, wherein the third electrode layer comprises a plurality of third electrodes which are in one-to-one correspondence with a plurality of first electrodes, and the fourth electrode layer comprises a plurality of fourth electrodes which are connected into a whole and are used for being connected with a negative electrode of a power supply.
The additional resistor layer comprises a plurality of additional resistors which are in one-to-one correspondence with at least part of the plurality of first electrodes, the additional resistors are arranged between the corresponding first electrodes and third electrodes, and the additional resistors are respectively and electrically connected with the corresponding first electrodes and third electrodes; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor further from the power supply.
In the display panel provided in the above embodiment, the additional resistor layer is disposed in the display panel, and the additional resistor layer includes a plurality of additional resistors disposed between the corresponding first electrodes and the third electrodes, and by setting the plurality of additional resistors such that the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor far away from the power supply, adverse effects due to channel modulation effects of the transistors in the driving circuit layer are advantageously improved, uniformity of screen brightness is advantageously improved, and display effect of the display panel is improved.
As shown in fig. 4 and 5, the display panel may include a substrate, a driving circuit layer disposed on the substrate, a flat layer 40 disposed on the driving circuit layer, and an OLED device layer disposed on the flat layer. The OLED device layer includes a plurality of spaced sub-pixels, and the driving circuit layer includes pixel driving circuits corresponding to the plurality of sub-pixels. Each sub-pixel comprises a third electrode 20, an organic functional layer and a fourth electrode. The third electrodes 20 of the sub-pixels are spaced apart by a spacing structure 50. The third electrodes of the sub-pixels form third electrode layers arranged at intervals. The fourth electrodes of the sub-pixels are connected into a whole to form a fourth electrode layer. Each pixel driving circuit includes at least one transistor. The transistor of the pixel driving circuit, which may be provided with an additional resistor 30 between the sub-pixel and the pixel driving circuit, includes a first electrode 10, a second electrode and a gate electrode corresponding to the third electrode 20. The planarization layer 40 is provided with a plurality of openings 41 above the first electrode 10. An additional resistor 30 is provided in the opening 41. The corresponding third electrode 20 is arranged above the additional resistor 30. The additional resistor 30 is electrically connected to the corresponding first electrode 10 and third electrode 20. The additional resistors 30 corresponding to each sub-pixel together form a spaced additional resistive layer. The resistance value of the additional resistor connected with the sub-pixel close to the power supply is larger than that of the additional resistor connected with the sub-pixel far away from the power supply.
It should be noted that, the structures and circuits of the display panels shown in fig. 4 and 5 are the same as those shown in fig. 1 and 2, and the same structural parts are denoted by the same reference numerals, and the description of fig. 1 and 2 is omitted here. In contrast, the display panel structure shown in fig. 4 has an additional resistor 30. Accordingly, in the electrical schematic shown in fig. 5, an additional resistor 30 is present between the transistor T and the OLED1, which additional resistor 30 is provided with a voltage V in the operating state.
It should be further noted that the driving circuit layer may further include other transistors not directly connected to the third electrode of the OLED device layer. The application is not limited to this, and may be set according to a specific application environment.
The material of the plurality of additional resistors 30 located at different positions may be the same material. Accordingly, the thickness of the plurality of additional resistors 30 proximate to the power source is greater than the thickness of the additional resistors distal from the power source. The thickness of the specific additional resistor 30 may be determined according to the resistivity of the material used, the distance of the additional resistor 30 from the power source, and the like, which is not limited in this application. For example, for a plurality of additional resistor structures 30 using the same resistive material, the thickness of different additional resistors 30 decreases as the distance of the additional resistor 30 from the power source increases.
In some embodiments, the resistive-attached material comprises TAPC. The TAPC is 4,4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline ].
In some embodiments, the additional resistive material may be doped with a P-type dopant material. To improve the conductivity of the additional resistor. The P-type doped material can comprise F4-TCNQ, moOx, C60 and the like.
In some embodiments, the additional resistive layer may be formed using inkjet printing. The amount of additional resistive material in the injection openings 41 can be controlled by controlling the pressure or injection time of the inkjet printing needle, etc., to control the thickness of the additional resistor and the magnitude of the resistor.
It should be noted that the materials of the additional resistors at different positions may also be different. For example, the materials of the corresponding additional resistors are selected differently, and the additional resistors can be set to be the same in thickness. Of course, it may be set differently. The application is not limited to this, and may be set according to a specific application environment. In addition, the additional resistor may not be provided between the sub-pixel located at the farthest or farther end from the power supply and the pixel driving circuit thereof, and the additional resistor may be provided between the sub-pixel located at the nearer end from the power supply and the pixel driving circuit thereof, as needed.
In some embodiments, the third electrode layer is an anode layer, and the fourth electrode layer is a cathode layer. Accordingly, the fourth electrode layer may be a square electrode layer of the cathode.
In some embodiments, the transistors of the pixel driving circuit are P-type thin film transistors. The first electrode 10 is the drain of the transistor and the second electrode is the source. Of course, in other embodiments, the transistor of the pixel driving circuit may also be an N-type thin film transistor, and accordingly, the first electrode is a source of the transistor and the second electrode is a drain.
In the above embodiments of the present application, the resistance value of the additional resistor connected to the sub-pixel close to the power supply is set to be greater than the resistance value of the additional resistor connected to the sub-pixel far from the power supply. So that the voltage divided by the far additional resistor is less in the working state, and the voltage divided by the near additional resistor is more. So that in the operating state, the voltage V of the additional resistor of each sub-pixel is consistent with the sum of the voltages Vcathode of the fourth electrode layers corresponding to the sub-pixels. Therefore, the sum of the voltage Vds of the transistor T of each sub-pixel driving circuit and the voltage Voled of the other parts OLED1 except the fourth electrode in the corresponding sub-pixel is kept consistent, so that the working current of each sub-pixel is kept consistent, the uniformity of the display brightness of the display device layer is improved, and the display effect of the display panel is improved.
The application also provides a display device. The display device includes a power supply and a display panel as described above. The second electrode of the display panel is connected with the positive electrode of the power supply, and the fourth electrode layer is connected with the negative electrode of the power supply.
As shown in fig. 6, the present application further provides a method for manufacturing a display panel. Please refer to fig. 6, and if necessary, fig. 4. Can be applied to manufacturing the display panel. The manufacturing method of the display panel comprises the following steps S10 to S50:
in step S10, a driving circuit layer is formed. The driving circuit layer includes a plurality of transistors, each of which includes a first electrode 10, a second electrode for connecting to a power source, and a gate electrode.
In step S40, an additional resistive layer is formed on the driving circuit layer. A plurality of additional resistors, which are located above the corresponding first electrodes 10 and are electrically connected with the corresponding first electrodes 10, are included in one-to-one correspondence with at least part of the plurality of first electrodes 10; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor further from the power supply.
In step S50, an OLED device layer is formed. The OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer. The third electrode layer includes a plurality of third electrodes 20 corresponding to the first electrodes 10 one by one, at least some of the third electrodes 20 are disposed above the corresponding additional resistors and electrically connected to the corresponding additional resistors and the first electrodes 10; the fourth electrode layer comprises a plurality of fourth electrodes which are connected into a whole and a negative electrode which is connected with a power supply. The organic functional layer may include a spacer structure 50. The plurality of third electrodes 20 are spaced apart and are separated by a spacing structure 50.
It should be noted that the driving circuit layer may further include other transistors not directly connected to the third electrode 20 of the OLED device layer. The application is not limited to this, and may be set according to a specific application environment.
The material of the plurality of additional resistors 30 located at different positions may be the same material. Accordingly, the thickness of the plurality of additional resistors 30 proximate to the power source is greater than the thickness of the additional resistors distal from the power source. The thickness of the specific additional resistor 30 may be determined according to the resistivity of the material used, the distance of the additional resistor 30 from the power source, and the like, which is not limited in this application. For example, for a plurality of additional resistor structures 30 using the same resistive material, the thickness of different additional resistors 30 decreases as the distance of the additional resistor 30 from the power source increases.
In some embodiments, the resistive-attached material comprises TAPC. The TAPC is 4,4' -cyclohexylbis [ N, N-bis (4-methylphenyl) aniline ].
In some embodiments, the additional resistive material may be doped with a P-type dopant material. To improve the conductivity of the additional resistor. The P-type doped material can comprise F4-TCNQ, moOx, C60 and the like.
In some embodiments, the additional resistive layer may be formed using inkjet printing. The amount of additional resistive material in the injection openings 41 can be controlled by controlling the pressure of the inkjet printhead, the injection time, etc., to control the thickness of the additional resistor.
It should be noted that the materials of the additional resistors at different positions may also be different. For example, the materials of the corresponding additional resistors are selected differently, and the additional resistors can be set to be the same in thickness. Of course, it may be set differently. The application is not limited to this, and may be set according to a specific application environment.
In some embodiments, the third electrode layer is an anode layer, and the fourth electrode layer is a cathode layer.
In some embodiments, the transistors of the pixel driving circuit are P-type thin film transistors. The first electrode 10 is the drain of the transistor and the second electrode is the source. Of course, in other embodiments, the transistor of the pixel driving circuit may also be an N-type thin film transistor, and accordingly, the first electrode is a source of the transistor and the second electrode is a drain.
Further, before the step S10, the method further includes providing a substrate. The driving circuit layer is specifically formed on the substrate.
Further, before step S30 after step S10 described above, the method further includes forming a planarization layer 40 on the driving circuit layer. And an opening 41 is started in the planar layer 40. An additional resistor 30 of the additional resistor layer is arranged in the opening 41.
In the present invention, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The terms "plurality," "a number" and "a number" refer to two or more, unless otherwise specifically defined.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the invention is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (9)

1. A display panel, comprising:
a driving circuit layer including a plurality of transistors, each of the transistors including a first electrode, a second electrode, and a gate electrode, the second electrode being for connecting an anode of a power source;
the OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer, wherein the third electrode layer comprises a plurality of third electrodes which are in one-to-one correspondence with a plurality of first electrodes, and the fourth electrode layer comprises a plurality of fourth electrodes which are connected into a whole and are used for being connected with a negative electrode of a power supply;
the additional resistor layer comprises a plurality of additional resistors which are in one-to-one correspondence with at least part of the plurality of first electrodes, the additional resistors are arranged between the corresponding first electrodes and third electrodes, and the additional resistors are respectively and electrically connected with the corresponding first electrodes and third electrodes; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor far from the power supply;
the thickness of the additional resistor close to the power supply is larger than that of the additional resistor far away from the power supply.
2. The display panel of claim 1, wherein the resistive-added material comprises TAPC.
3. The display panel of claim 2, wherein the additional resistive material is doped with a P-type dopant material.
4. The display panel of claim 1, wherein the additional resistive layer is formed by inkjet printing.
5. The display panel of claim 1, wherein the third electrode layer is an anode layer and the fourth electrode layer is a cathode layer.
6. The display panel of claim 1, further comprising a planarization layer over the driving circuit layer, the planarization layer having a plurality of openings corresponding to the plurality of first electrodes, the additional resistor being located in the openings.
7. A display device comprising a power supply and the display panel according to any one of claims 1 to 6, wherein a second electrode of the display panel is connected to a positive electrode of the power supply, and wherein the fourth electrode layer is connected to a negative electrode of the power supply.
8. A method of manufacturing a display panel according to any one of claims 1 to 7, the method comprising:
forming a driving circuit layer; the driving circuit layer comprises a plurality of transistors, each transistor comprises a first electrode, a second electrode and a grid electrode, and the second electrode is used for being connected with a power supply;
forming an additional resistive layer on the driving circuit layer; the electrode structure comprises a plurality of additional resistors which are in one-to-one correspondence with at least part of the first electrodes, wherein the additional resistors are positioned above the corresponding first electrodes and are electrically connected with the corresponding first electrodes; wherein the resistance value of the additional resistor close to the power supply is greater than the resistance value of the additional resistor far from the power supply;
forming an OLED device layer; the OLED device layer comprises a third electrode layer, a fourth electrode layer and an organic functional layer arranged between the third electrode layer and the fourth electrode layer; the third electrode layer comprises a plurality of third electrodes which are in one-to-one correspondence with the first electrodes, and at least part of the third electrodes are arranged on the corresponding additional resistors and are electrically connected with the corresponding additional resistors and the first electrodes; the fourth electrode layer comprises a plurality of fourth electrodes which are connected into a whole and a negative electrode which is connected with a power supply.
9. The method of manufacturing a display panel according to claim 8, wherein a thickness of an additional resistor of the plurality of additional resistors, which is closer to the power source, is greater than a thickness of an additional resistor, which is farther from the power source; or alternatively, the first and second heat exchangers may be,
the additional resistive layer is formed by means of inkjet printing.
CN202011270556.4A 2020-11-13 2020-11-13 Display panel, display device and manufacturing method of display panel Active CN112397563B (en)

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