JP2002508294A5 - - Google Patents
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- Publication number
- JP2002508294A5 JP2002508294A5 JP2000538947A JP2000538947A JP2002508294A5 JP 2002508294 A5 JP2002508294 A5 JP 2002508294A5 JP 2000538947 A JP2000538947 A JP 2000538947A JP 2000538947 A JP2000538947 A JP 2000538947A JP 2002508294 A5 JP2002508294 A5 JP 2002508294A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- current
- rod
- silicon rod
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 description 141
- 239000010703 silicon Substances 0.000 description 141
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 140
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 38
- 238000000151 deposition Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 31
- 230000008021 deposition Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
- 239000007858 starting material Substances 0.000 description 12
- 230000035882 stress Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 9
- 230000002500 effect on skin Effects 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 2
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- VJIYRPVGAZXYBD-UHFFFAOYSA-N dibromosilane Chemical compound Br[SiH2]Br VJIYRPVGAZXYBD-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- AIHCVGFMFDEUMO-UHFFFAOYSA-N diiodosilane Chemical compound I[SiH2]I AIHCVGFMFDEUMO-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- IBOKZQNMFSHYNQ-UHFFFAOYSA-N tribromosilane Chemical compound Br[SiH](Br)Br IBOKZQNMFSHYNQ-UHFFFAOYSA-N 0.000 description 1
- DNAPJAGHXMPFLD-UHFFFAOYSA-N triiodosilane Chemical compound I[SiH](I)I DNAPJAGHXMPFLD-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6959697P | 1997-12-15 | 1997-12-15 | |
| US60/069,596 | 1997-12-15 | ||
| PCT/US1998/026713 WO1999031013A1 (en) | 1997-12-15 | 1998-12-15 | Chemical vapor deposition system for polycrystalline silicon rod production |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002508294A JP2002508294A (ja) | 2002-03-19 |
| JP2002508294A5 true JP2002508294A5 (enExample) | 2006-02-16 |
| JP4812938B2 JP4812938B2 (ja) | 2011-11-09 |
Family
ID=22090015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000538947A Expired - Fee Related JP4812938B2 (ja) | 1997-12-15 | 1998-12-15 | 多結晶シリコン棒製造用化学的蒸気析着方式 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6221155B1 (enExample) |
| JP (1) | JP4812938B2 (enExample) |
| DE (1) | DE19882883B4 (enExample) |
| WO (1) | WO1999031013A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
| US6468886B2 (en) * | 1999-06-15 | 2002-10-22 | Midwest Research Institute | Purification and deposition of silicon by an iodide disproportionation reaction |
| KR100797423B1 (ko) * | 2000-05-17 | 2008-01-23 | 가부시키가이샤 아이에이치아이 | 플라즈마 ｃｖｄ 장치 및 방법 |
| JP3507842B2 (ja) | 2001-07-03 | 2004-03-15 | 住友チタニウム株式会社 | 水冷式反応容器における水漏れ検知方法 |
| EP1907597B1 (de) * | 2005-07-27 | 2009-04-29 | Applied Materials GmbH & Co. KG | Vorrichtung zum einspannen und positionieren eines verdampferschiffchens |
| JP4905638B2 (ja) * | 2005-10-11 | 2012-03-28 | 三菱マテリアル株式会社 | 電極の短絡防止方法および短絡防止板 |
| US9683286B2 (en) * | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
| WO2009049020A2 (en) | 2007-10-11 | 2009-04-16 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
| RU2499768C2 (ru) | 2008-03-10 | 2013-11-27 | Аег Пауэр Солюшнс Б.В. | Устройство и способ равномерного электропитания кремниевого стержня |
| CN101559948B (zh) * | 2008-03-10 | 2014-02-26 | 安奕极电源系统有限责任公司 | 在沉积工艺期间在硅棒中产生均匀温度分布的装置和方法 |
| CN101311656B (zh) * | 2008-03-12 | 2010-06-09 | 江苏双良锅炉有限公司 | 快开式、水冷结构的多晶硅还原炉 |
| JP5266817B2 (ja) * | 2008-03-17 | 2013-08-21 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
| RU2499081C2 (ru) * | 2008-03-26 | 2013-11-20 | ДжиТиЭйТи Корпорейшн | Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы |
| CN101980959A (zh) * | 2008-03-26 | 2011-02-23 | Gt太阳能公司 | 涂覆金的多晶硅反应器系统和方法 |
| JP5959198B2 (ja) * | 2008-04-14 | 2016-08-02 | ヘムロック・セミコンダクター・コーポレーション | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
| CA2721194A1 (en) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| WO2009128886A1 (en) * | 2008-04-14 | 2009-10-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| RU2388690C2 (ru) * | 2008-05-22 | 2010-05-10 | Общество с ограниченной ответственностью "Группа СТР" | Способ получения поликристаллического кремния |
| JP5444839B2 (ja) * | 2008-05-28 | 2014-03-19 | 三菱マテリアル株式会社 | トリクロロシラン製造装置及び製造方法 |
| JP5338574B2 (ja) * | 2008-09-09 | 2013-11-13 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
| DE102009003368B3 (de) * | 2009-01-22 | 2010-03-25 | G+R Polysilicon Gmbh | Reaktor zur Herstellung von polykristallinem Silizium nach dem Monosilan-Prozess |
| DE202010002486U1 (de) * | 2009-03-31 | 2010-06-10 | Centrotherm Sitec Gmbh | Spann- und Kontaktierungsvorrichtung für Silizium-Dünnstäbe |
| US10689753B1 (en) * | 2009-04-21 | 2020-06-23 | Goodrich Corporation | System having a cooling element for densifying a substrate |
| JP5477145B2 (ja) * | 2009-04-28 | 2014-04-23 | 三菱マテリアル株式会社 | 多結晶シリコン反応炉 |
| RU2409518C1 (ru) * | 2009-07-14 | 2011-01-20 | Государственное образовательное учреждение высшего профессионального образования "Томский политехнический университет" | Способ получения поликристаллического кремния |
| EP2454394A1 (en) * | 2009-07-14 | 2012-05-23 | Hemlock Semiconductor Corporation | A method of inhibiting formation of deposits in a manufacturing system |
| JP5751748B2 (ja) * | 2009-09-16 | 2015-07-22 | 信越化学工業株式会社 | 多結晶シリコン塊群および多結晶シリコン塊群の製造方法 |
| RU2012114734A (ru) * | 2009-10-09 | 2013-11-20 | Хемлок Семикэндактор Корпорейшн | Технологическое устройство для осаждения материала и электрод для использования в таком устройстве |
| KR101115697B1 (ko) * | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기 |
| KR101145642B1 (ko) * | 2009-12-02 | 2012-05-24 | 주식회사 신우 엠에스티 | 실리콘 생산장치 및 그 방법 |
| US20110206842A1 (en) * | 2010-02-25 | 2011-08-25 | Vithal Revankar | CVD-Siemens Reactor Process Hydrogen Recycle System |
| CN102190305B (zh) * | 2010-03-15 | 2014-10-29 | 三菱综合材料株式会社 | 三氯硅烷制造装置 |
| TW201142069A (en) * | 2010-03-19 | 2011-12-01 | Gt Solar Inc | System and method for polycrystalline silicon deposition |
| US9315895B2 (en) * | 2010-05-10 | 2016-04-19 | Mitsubishi Materials Corporation | Apparatus for producing polycrystalline silicon |
| JP5792657B2 (ja) * | 2012-02-23 | 2015-10-14 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法 |
| JP5792658B2 (ja) * | 2012-02-23 | 2015-10-14 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法 |
| JP5874469B2 (ja) * | 2012-03-19 | 2016-03-02 | 東京エレクトロン株式会社 | トラップ装置及び成膜装置 |
| KR101538388B1 (ko) * | 2013-06-11 | 2015-07-22 | 이이쿠보 유이치 | 디실란과 트리실란과 테트라실란의 제조를 위한 유전체 장벽 방전 반응장치 |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| US10450649B2 (en) | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
| JP6418778B2 (ja) | 2014-05-07 | 2018-11-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の製造方法、および、単結晶シリコン |
| JP6181620B2 (ja) * | 2014-09-04 | 2017-08-16 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
| DE102014222883A1 (de) * | 2014-11-10 | 2016-05-12 | Wacker Chemie Ag | Polykristallines Siliciumstabpaar und Verfahren zur Herstellung von polykristallinem Silicium |
| US10208381B2 (en) | 2014-12-23 | 2019-02-19 | Rec Silicon Inc | Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor |
| CN105858665B (zh) * | 2015-01-23 | 2018-12-04 | 上海森松新能源设备有限公司 | 多晶硅沉积炉 |
| JP6314097B2 (ja) * | 2015-02-19 | 2018-04-18 | 信越化学工業株式会社 | 多結晶シリコン棒 |
| JP6454248B2 (ja) * | 2015-09-14 | 2019-01-16 | 信越化学工業株式会社 | 多結晶シリコン棒 |
| US11424104B2 (en) * | 2017-04-24 | 2022-08-23 | Applied Materials, Inc. | Plasma reactor with electrode filaments extending from ceiling |
| JP6984018B2 (ja) * | 2017-12-05 | 2021-12-17 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 表面温度を決定する方法 |
| JP7191780B2 (ja) * | 2019-06-17 | 2022-12-19 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法 |
| CN112624119A (zh) * | 2020-12-30 | 2021-04-09 | 湖南三安半导体有限责任公司 | 碳化硅粉体、其制备方法和应用及反应装置 |
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| NL113918C (enExample) | 1957-09-07 | |||
| US3523816A (en) | 1967-10-27 | 1970-08-11 | Texas Instruments Inc | Method for producing pure silicon |
| DE2149526C3 (de) * | 1970-10-12 | 1980-09-25 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen von Rohren aus Silicium |
| US3938031A (en) | 1974-09-03 | 1976-02-10 | Robicon Corporation | Adjustable voltage power supply |
| JPS53106626A (en) | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
| JPS53108029A (en) * | 1977-03-03 | 1978-09-20 | Komatsu Mfg Co Ltd | Method of making high purity silicon having uniform shape |
| DE2753567C3 (de) | 1977-12-01 | 1982-04-15 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen |
| DE2831816A1 (de) * | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
| US4292344A (en) | 1979-02-23 | 1981-09-29 | Union Carbide Corporation | Fluidized bed heating process and apparatus |
| DE2928456C2 (de) | 1979-07-13 | 1983-07-07 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinem Silicium |
| US4506131A (en) | 1983-08-29 | 1985-03-19 | Inductotherm Industries Inc. | Multiple zone induction coil power control apparatus and method |
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| US4578552A (en) | 1985-08-01 | 1986-03-25 | Inductotherm Corporation | Levitation heating using single variable frequency power supply |
| KR880000618B1 (ko) | 1985-12-28 | 1988-04-18 | 재단법인 한국화학연구소 | 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법 |
| US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
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| US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
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| US4957777A (en) * | 1988-07-28 | 1990-09-18 | Massachusetts Institute Of Technology | Very low pressure chemical vapor deposition process for deposition of titanium silicide films |
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| US5433786A (en) | 1993-08-27 | 1995-07-18 | The Dow Chemical Company | Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein |
| JPH0855810A (ja) | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
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| JP3357675B2 (ja) | 1996-05-21 | 2002-12-16 | 株式会社 トクヤマ | 多結晶シリコンロッドおよびその製造方法 |
| JPH11238882A (ja) * | 1998-02-23 | 1999-08-31 | Sony Corp | 半導体装置の製造方法 |
-
1998
- 1998-12-15 JP JP2000538947A patent/JP4812938B2/ja not_active Expired - Fee Related
- 1998-12-15 US US09/212,088 patent/US6221155B1/en not_active Expired - Lifetime
- 1998-12-15 WO PCT/US1998/026713 patent/WO1999031013A1/en not_active Ceased
- 1998-12-15 DE DE19882883T patent/DE19882883B4/de not_active Expired - Fee Related
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