JP6181620B2 - 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 - Google Patents
多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 Download PDFInfo
- Publication number
- JP6181620B2 JP6181620B2 JP2014179793A JP2014179793A JP6181620B2 JP 6181620 B2 JP6181620 B2 JP 6181620B2 JP 2014179793 A JP2014179793 A JP 2014179793A JP 2014179793 A JP2014179793 A JP 2014179793A JP 6181620 B2 JP6181620 B2 JP 6181620B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- reactor
- reaction
- gas
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 21
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 19
- 239000005052 trichlorosilane Substances 0.000 claims description 19
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 14
- 239000005049 silicon tetrachloride Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 62
- 239000012495 reaction gas Substances 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 238000001556 precipitation Methods 0.000 description 20
- 239000002994 raw material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000011863 silicon-based powder Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000005046 Chlorosilane Substances 0.000 description 7
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 7
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 5
- 241000482268 Zea mays subsp. mays Species 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 206010024769 Local reaction Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0801—Controlling the process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
Description
1 ベルジャ
2 底板
3 シリコン芯線
4 金属電極
5 ガス供給ノズル
6 反応排ガス口
7 冷却水路
8 多結晶シリコン棒
Claims (4)
- シーメンス法により多結晶シリコンを製造するための反応炉であって、
前記反応炉の直胴部に垂直な該反応炉の内断面積をS0とし、前記反応炉内に配置される少なくとも一対の逆U字型シリコン芯線上への多結晶シリコンの析出により育成される多結晶シリコン棒の断面積の総和をSR=ΣSiとしたときに、
S=[S0−SR]/SRで定義される反応空間断面積比が、前記多結晶シリコン棒の直径が140mm以上の場合に2.5以上を満足する炉内反応空間を有し、
前記炉内反応空間は前記多結晶シリコン棒の相互間距離が最終直径時において75mm以上確保される空間とされる、
ことを特徴とする多結晶シリコン製造用反応炉。 - 請求項1に記載の反応炉を備えている、多結晶シリコン製造装置。
- シーメンス法による多結晶シリコンの製造方法であって、
請求項1に記載の反応炉を用い、成長中の多結晶シリコン棒の直径が100mmφまでの反応工程において、排ガス中のトリクロロシラン(TCS)と四塩化珪素(STC)の重量%組成比が1.2以上となるように制御する、
ことを特徴とする多結晶シリコンの製造方法。 - シーメンス法による多結晶シリコンの製造方法であって、
請求項1に記載の反応炉を用い、
前記逆U字型シリコン芯線に50Hz〜10,000KHzの高周波電流を給電し、前記多結晶シリコン棒の芯近傍100mmφ以内の温度を1400℃以下に制御する、
ことを特徴とする多結晶シリコンの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014179793A JP6181620B2 (ja) | 2014-09-04 | 2014-09-04 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
PCT/JP2015/003820 WO2016035249A1 (ja) | 2014-09-04 | 2015-07-29 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
EP15838723.3A EP3190086B1 (en) | 2014-09-04 | 2015-07-29 | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and, polycrystalline silicon rod or polycrystalline silicon ingot |
CN202010051606.3A CN111153407A (zh) | 2014-09-04 | 2015-07-29 | 多晶硅制造用反应炉、多晶硅制造装置、多晶硅的制造方法、以及多晶硅棒或多晶硅块 |
KR1020177003750A KR102182159B1 (ko) | 2014-09-04 | 2015-07-29 | 다결정 실리콘 제조용 반응로, 다결정 실리콘 제조 장치, 다결정 실리콘의 제조 방법, 및 다결정 실리콘 봉 또는 다결정 실리콘 괴 |
US15/501,715 US10858258B2 (en) | 2014-09-04 | 2015-07-29 | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot |
CN201580044611.9A CN106573784B (zh) | 2014-09-04 | 2015-07-29 | 多晶硅制造用反应炉、多晶硅制造装置、多晶硅的制造方法、以及多晶硅棒或多晶硅块 |
US16/845,779 US10870581B2 (en) | 2014-09-04 | 2020-04-10 | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014179793A JP6181620B2 (ja) | 2014-09-04 | 2014-09-04 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016052970A JP2016052970A (ja) | 2016-04-14 |
JP6181620B2 true JP6181620B2 (ja) | 2017-08-16 |
Family
ID=55439340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014179793A Active JP6181620B2 (ja) | 2014-09-04 | 2014-09-04 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10858258B2 (ja) |
EP (1) | EP3190086B1 (ja) |
JP (1) | JP6181620B2 (ja) |
KR (1) | KR102182159B1 (ja) |
CN (2) | CN111153407A (ja) |
WO (1) | WO2016035249A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015209008A1 (de) * | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
JP2018065710A (ja) | 2016-10-18 | 2018-04-26 | 信越化学工業株式会社 | 多結晶シリコン塊、多結晶シリコン棒、および単結晶シリコンの製造方法 |
JP2018123033A (ja) * | 2017-02-02 | 2018-08-09 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
JP6969917B2 (ja) | 2017-07-12 | 2021-11-24 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
CN110395735A (zh) * | 2018-04-24 | 2019-11-01 | 内蒙古盾安光伏科技有限公司 | 多晶硅的还原生产 |
CN114455588A (zh) * | 2022-02-25 | 2022-05-10 | 洛阳市自动化研究所有限公司 | 一种采用多组硅芯组件组合生长多晶硅棒的方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19882883B4 (de) | 1997-12-15 | 2009-02-26 | Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake | System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen |
JP2002241120A (ja) | 2001-02-15 | 2002-08-28 | Sumitomo Titanium Corp | 多結晶シリコン製造用反応炉及び多結晶シリコン製造方法 |
JP2006206387A (ja) | 2005-01-28 | 2006-08-10 | Mitsubishi Materials Corp | 多結晶シリコン還元炉及び多結晶シリコンロッド |
JP5428303B2 (ja) * | 2007-11-28 | 2014-02-26 | 三菱マテリアル株式会社 | 多結晶シリコン製造方法 |
JP5509578B2 (ja) * | 2007-11-28 | 2014-06-04 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置及び製造方法 |
JP5604803B2 (ja) * | 2008-03-28 | 2014-10-15 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置におけるポリマー不活性化方法 |
JP5633174B2 (ja) | 2010-04-12 | 2014-12-03 | 三菱マテリアル株式会社 | 多結晶シリコンロッド |
JP5238762B2 (ja) * | 2010-07-06 | 2013-07-17 | 信越化学工業株式会社 | 多結晶シリコン棒および多結晶シリコン棒の製造方法 |
MY163182A (en) * | 2011-01-21 | 2017-08-15 | Shinetsu Chemical Co | Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon |
JP5360147B2 (ja) * | 2011-07-11 | 2013-12-04 | 三菱マテリアル株式会社 | 多結晶シリコン還元炉 |
JP5699060B2 (ja) * | 2011-09-20 | 2015-04-08 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
JP5719282B2 (ja) * | 2011-11-29 | 2015-05-13 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
JP5792657B2 (ja) | 2012-02-23 | 2015-10-14 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法 |
JP5917359B2 (ja) * | 2012-10-16 | 2016-05-11 | 信越化学工業株式会社 | 多結晶シリコン製造用原料ガスの供給方法および多結晶シリコン |
-
2014
- 2014-09-04 JP JP2014179793A patent/JP6181620B2/ja active Active
-
2015
- 2015-07-29 CN CN202010051606.3A patent/CN111153407A/zh active Pending
- 2015-07-29 WO PCT/JP2015/003820 patent/WO2016035249A1/ja active Application Filing
- 2015-07-29 US US15/501,715 patent/US10858258B2/en active Active
- 2015-07-29 KR KR1020177003750A patent/KR102182159B1/ko active IP Right Grant
- 2015-07-29 EP EP15838723.3A patent/EP3190086B1/en active Active
- 2015-07-29 CN CN201580044611.9A patent/CN106573784B/zh active Active
-
2020
- 2020-04-10 US US16/845,779 patent/US10870581B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3190086A1 (en) | 2017-07-12 |
KR102182159B1 (ko) | 2020-11-24 |
US10870581B2 (en) | 2020-12-22 |
EP3190086A4 (en) | 2018-03-21 |
CN106573784B (zh) | 2022-05-27 |
CN111153407A (zh) | 2020-05-15 |
US20170225957A1 (en) | 2017-08-10 |
EP3190086B1 (en) | 2022-01-12 |
JP2016052970A (ja) | 2016-04-14 |
KR20170053613A (ko) | 2017-05-16 |
CN106573784A (zh) | 2017-04-19 |
WO2016035249A1 (ja) | 2016-03-10 |
US20200239320A1 (en) | 2020-07-30 |
US10858258B2 (en) | 2020-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6181620B2 (ja) | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 | |
JP5719282B2 (ja) | 多結晶シリコンの製造方法 | |
JP5739456B2 (ja) | 多結晶シリコン製造装置および多結晶シリコンの製造方法 | |
JP5507512B2 (ja) | 多結晶シリコンの製造方法 | |
JP5699060B2 (ja) | 多結晶シリコンの製造方法 | |
JP5579634B2 (ja) | 多結晶シリコン製造用反応炉および多結晶シリコンの製造方法 | |
JP5917359B2 (ja) | 多結晶シリコン製造用原料ガスの供給方法および多結晶シリコン | |
US9738530B2 (en) | Polycrystalline silicon deposition method | |
JP5642755B2 (ja) | 多結晶シリコンを析出させるための装置及び方法 | |
JP5859626B2 (ja) | 多結晶シリコン製造装置および多結晶シリコンの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170614 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170704 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170720 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6181620 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |