JP5792658B2 - 多結晶シリコン棒の製造方法 - Google Patents
多結晶シリコン棒の製造方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Description
前記方法は、周波数可変の高周波電源により、前記多結晶シリコン棒に2kHz以上の周波数を有する電流を通電させて加熱する高周波電流通電工程を備えており、
該高周波電流通電工程は、直列に連結された前記多結晶シリコンの析出により直径が80mm以上の所定値D0に達した多結晶シリコン棒に高周波電流を供給する工程を含み、
該高周波電流の供給工程では、前記高周波電流が前記多結晶シリコン棒中を流れる際の表皮深さが13.8mm以上で80.0mm以下となる範囲内で、前記高周波電流の周波数が前記多結晶シリコン棒の表面温度変動に応じて選択され、
前記原料ガスとしてトリクロロシランを含有するガスを選択し、前記多結晶シリコン棒の表面温度を900℃以上で1250℃以下に制御して多結晶シリコンを析出させること、を特徴とする。
反応炉100のチャンバ1内に高純度多結晶シリコンからなるシリコン芯線12をセットした。カーボンヒータ13を用い、シリコン芯線12を370℃まで初期加熱した後、シリコン芯線12に、印加電圧2000V、商用周波数である50Hzの低周波電流の通電を開始した。
反応炉100のチャンバ1内に高純度多結晶シリコンからなるシリコン芯線12をセットした。カーボンヒータ13を用い、シリコン芯線12を340℃まで初期加熱した後、シリコン芯線12に、印加電圧2000V、商用周波数である50Hzの低周波電流の通電を開始した。
反応炉100のチャンバ1内に高純度多結晶シリコンからなるシリコン芯線12をセットした。カーボンヒータ13を用い、シリコン芯線12を355℃まで初期加熱した後、シリコン芯線12に、印加電圧2000V、商用周波数である50Hzの低周波電流の通電を開始した。
2 のぞき窓
3 冷媒入口(ベルジャー)
4 冷媒出口(ベルジャー)
5 ベースプレート
6 冷媒入口(ベースプレート)
7 冷媒出口(ベースプレート)
8 反応排ガス出口
9 原料ガス供給ノズル
10 電極
11 シリコン棒
12 シリコン芯線
13 カーボンヒータ
14 芯線ホルダ
15L,H,C 電源
16 直列/接続切り替え回路
100 反応炉
151 受電部
152 低圧気中遮断器(ACB)
153 電源変圧器
154 出力制御部
155 出力部
156 出力変圧器
157 周波数変換器
Claims (3)
- 反応器中にシリコン芯線を配置し、前記反応器内にシラン化合物を含有する原料ガスを供給し、通電により加熱された前記シリコン芯線上にCVD法により多結晶シリコンを析出させて多結晶シリコン棒を製造する方法であって、
前記方法は、周波数可変の高周波電源により、前記多結晶シリコン棒に2kHz以上の周波数を有する電流を通電させて加熱する高周波電流通電工程を備えており、
該高周波電流通電工程は、直列に連結された前記多結晶シリコンの析出により直径が80mm以上の所定値D0に達した多結晶シリコン棒に高周波電流を供給する工程を含み、
該高周波電流の供給工程では、前記高周波電流が前記多結晶シリコン棒中を流れる際の表皮深さが13.8mm以上で80.0mm以下となる範囲内で、前記高周波電流の周波数が前記多結晶シリコン棒の表面温度変動に応じて選択され、
前記原料ガスとしてトリクロロシランを含有するガスを選択し、前記多結晶シリコン棒の表面温度を900℃以上で1250℃以下に制御して多結晶シリコンを析出させること、を特徴とする多結晶シリコン棒の製造方法。 - 前記高周波電流の周波数の選択は少なくとも2つの周波数間で行われ、
前記高周波電流の供給工程は、通電量が一定の条件で電流供給している状態で前記多結晶シリコン棒の表面温度の低下のおそれが生じた際に、前記高周波電流の周波数を低周波数側に切り替えるとともに前記通電量を増加させて前記多結晶シリコン棒の表面温度を維持する工程を含む、請求項1に記載の多結晶シリコン棒の製造方法。 - 前記高周波電流の周波数の選択は少なくとも2つの周波数間で行われ、
前記高周波電流の供給工程は、通電量が一定の条件で電流供給している状態で前記多結晶シリコン棒の表面温度の低下のおそれが生じた際に、前記通電量は維持しつつ前記高周波電流の周波数を高周波数側に切り替えて前記多結晶シリコン棒の表面温度を維持する工程を含む、請求項1に記載の多結晶シリコン棒の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012037161A JP5792658B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
PCT/JP2013/000893 WO2013125208A1 (ja) | 2012-02-23 | 2013-02-19 | 多結晶シリコン棒の製造方法 |
MYPI2014702227A MY171531A (en) | 2012-02-23 | 2013-02-19 | Polycrystalline silicon rod manufacturing method |
EP13751609.2A EP2818449B1 (en) | 2012-02-23 | 2013-02-19 | Polycrystalline silicon rod manufacturing method |
CN201710117230.XA CN106947955A (zh) | 2012-02-23 | 2013-02-19 | 多晶硅棒的制造方法 |
CN201380006277.9A CN104066678B (zh) | 2012-02-23 | 2013-02-19 | 多晶硅棒的制造方法 |
KR1020147019668A KR20140128300A (ko) | 2012-02-23 | 2013-02-19 | 다결정 실리콘 봉의 제조 방법 |
US14/379,429 US20150037516A1 (en) | 2012-02-23 | 2013-02-19 | Polycrystalline silicon rod manufacturing method |
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JP2012037161A JP5792658B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2013170118A JP2013170118A (ja) | 2013-09-02 |
JP2013170118A5 JP2013170118A5 (ja) | 2014-01-23 |
JP5792658B2 true JP5792658B2 (ja) | 2015-10-14 |
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JP2012037161A Active JP5792658B2 (ja) | 2012-02-23 | 2012-02-23 | 多結晶シリコン棒の製造方法 |
Country Status (7)
Country | Link |
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US (1) | US20150037516A1 (ja) |
EP (1) | EP2818449B1 (ja) |
JP (1) | JP5792658B2 (ja) |
KR (1) | KR20140128300A (ja) |
CN (2) | CN106947955A (ja) |
MY (1) | MY171531A (ja) |
WO (1) | WO2013125208A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6418778B2 (ja) | 2014-05-07 | 2018-11-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の製造方法、および、単結晶シリコン |
JP6314097B2 (ja) * | 2015-02-19 | 2018-04-18 | 信越化学工業株式会社 | 多結晶シリコン棒 |
JP7191780B2 (ja) | 2019-06-17 | 2022-12-19 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法 |
CN114150372A (zh) * | 2022-02-10 | 2022-03-08 | 杭州中欣晶圆半导体股份有限公司 | 一种横向磁场变频电流控制系统及单晶生长缺陷控制方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2831816A1 (de) | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
JPS6374909A (ja) | 1986-09-19 | 1988-04-05 | Shin Etsu Handotai Co Ltd | 大直径多結晶シリコン棒の製造方法 |
DE19882883B4 (de) | 1997-12-15 | 2009-02-26 | Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake | System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen |
RU2499768C2 (ru) * | 2008-03-10 | 2013-11-27 | Аег Пауэр Солюшнс Б.В. | Устройство и способ равномерного электропитания кремниевого стержня |
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2012
- 2012-02-23 JP JP2012037161A patent/JP5792658B2/ja active Active
-
2013
- 2013-02-19 KR KR1020147019668A patent/KR20140128300A/ko not_active Application Discontinuation
- 2013-02-19 MY MYPI2014702227A patent/MY171531A/en unknown
- 2013-02-19 CN CN201710117230.XA patent/CN106947955A/zh not_active Withdrawn
- 2013-02-19 CN CN201380006277.9A patent/CN104066678B/zh active Active
- 2013-02-19 WO PCT/JP2013/000893 patent/WO2013125208A1/ja active Application Filing
- 2013-02-19 EP EP13751609.2A patent/EP2818449B1/en active Active
- 2013-02-19 US US14/379,429 patent/US20150037516A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2013170118A (ja) | 2013-09-02 |
MY171531A (en) | 2019-10-16 |
CN104066678A (zh) | 2014-09-24 |
EP2818449B1 (en) | 2021-12-29 |
KR20140128300A (ko) | 2014-11-05 |
CN104066678B (zh) | 2018-05-04 |
CN106947955A (zh) | 2017-07-14 |
US20150037516A1 (en) | 2015-02-05 |
WO2013125208A1 (ja) | 2013-08-29 |
EP2818449A1 (en) | 2014-12-31 |
EP2818449A4 (en) | 2015-08-26 |
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