IL117770A0 - Method and apparatus for growing of extended crystals - Google Patents

Method and apparatus for growing of extended crystals

Info

Publication number
IL117770A0
IL117770A0 IL11777096A IL11777096A IL117770A0 IL 117770 A0 IL117770 A0 IL 117770A0 IL 11777096 A IL11777096 A IL 11777096A IL 11777096 A IL11777096 A IL 11777096A IL 117770 A0 IL117770 A0 IL 117770A0
Authority
IL
Israel
Prior art keywords
growing
extended crystals
crystals
extended
Prior art date
Application number
IL11777096A
Original Assignee
Levtec Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Levtec Ltd filed Critical Levtec Ltd
Priority to IL11777096A priority Critical patent/IL117770A0/en
Publication of IL117770A0 publication Critical patent/IL117770A0/en
Priority to AU20418/97A priority patent/AU2041897A/en
Priority to PCT/IL1997/000112 priority patent/WO1997036822A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL11777096A 1996-04-02 1996-04-02 Method and apparatus for growing of extended crystals IL117770A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IL11777096A IL117770A0 (en) 1996-04-02 1996-04-02 Method and apparatus for growing of extended crystals
AU20418/97A AU2041897A (en) 1996-04-02 1997-03-28 Method and apparatus for growing extended crystals
PCT/IL1997/000112 WO1997036822A1 (en) 1996-04-02 1997-03-28 Method and apparatus for growing extended crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL11777096A IL117770A0 (en) 1996-04-02 1996-04-02 Method and apparatus for growing of extended crystals

Publications (1)

Publication Number Publication Date
IL117770A0 true IL117770A0 (en) 1996-08-04

Family

ID=11068732

Family Applications (1)

Application Number Title Priority Date Filing Date
IL11777096A IL117770A0 (en) 1996-04-02 1996-04-02 Method and apparatus for growing of extended crystals

Country Status (3)

Country Link
AU (1) AU2041897A (en)
IL (1) IL117770A0 (en)
WO (1) WO1997036822A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19882883B4 (en) * 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake Chemical vapor deposition system for producing polycrystalline silicon rods
US6544333B2 (en) 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
RU2499768C2 (en) 2008-03-10 2013-11-27 Аег Пауэр Солюшнс Б.В. Device and method for even power supply to silicon rod
CN101559948B (en) * 2008-03-10 2014-02-26 安奕极电源系统有限责任公司 Device and method for producing a uniform temperature distribution in silicon rods during a precipitation process
DE102015122248A1 (en) * 2015-12-18 2017-06-22 Christian Menzel Reactor and method for growing silicon
CN112105584A (en) * 2018-12-17 2020-12-18 瓦克化学股份公司 Method for preparing polycrystalline silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342161A (en) * 1961-11-27 1967-09-19 Siemens Ag Apparatus for pyrolytic production of semiconductor material
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3980042A (en) * 1972-03-21 1976-09-14 Siemens Aktiengesellschaft Vapor deposition apparatus with computer control
DE2831816A1 (en) * 1978-07-19 1980-01-31 Siemens Ag METHOD FOR DEPOSITING SILICON IN FINE CRYSTALLINE FORM

Also Published As

Publication number Publication date
AU2041897A (en) 1997-10-22
WO1997036822A1 (en) 1997-10-09

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