AU2041897A - Method and apparatus for growing extended crystals - Google Patents
Method and apparatus for growing extended crystalsInfo
- Publication number
- AU2041897A AU2041897A AU20418/97A AU2041897A AU2041897A AU 2041897 A AU2041897 A AU 2041897A AU 20418/97 A AU20418/97 A AU 20418/97A AU 2041897 A AU2041897 A AU 2041897A AU 2041897 A AU2041897 A AU 2041897A
- Authority
- AU
- Australia
- Prior art keywords
- growing
- extended crystals
- crystals
- growing extended
- extended
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL11777096A IL117770A0 (en) | 1996-04-02 | 1996-04-02 | Method and apparatus for growing of extended crystals |
IL117770 | 1996-04-02 | ||
PCT/IL1997/000112 WO1997036822A1 (en) | 1996-04-02 | 1997-03-28 | Method and apparatus for growing extended crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2041897A true AU2041897A (en) | 1997-10-22 |
Family
ID=11068732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU20418/97A Abandoned AU2041897A (en) | 1996-04-02 | 1997-03-28 | Method and apparatus for growing extended crystals |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2041897A (en) |
IL (1) | IL117770A0 (en) |
WO (1) | WO1997036822A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
WO1999031013A1 (en) * | 1997-12-15 | 1999-06-24 | Advanced Silicon Materials, Inc. | Chemical vapor deposition system for polycrystalline silicon rod production |
RU2499768C2 (en) | 2008-03-10 | 2013-11-27 | Аег Пауэр Солюшнс Б.В. | Device and method for even power supply to silicon rod |
CN101559948B (en) * | 2008-03-10 | 2014-02-26 | 安奕极电源系统有限责任公司 | Device and method for producing a uniform temperature distribution in silicon rods during a precipitation process |
DE102015122248A1 (en) * | 2015-12-18 | 2017-06-22 | Christian Menzel | Reactor and method for growing silicon |
KR102553013B1 (en) | 2018-12-17 | 2023-07-06 | 와커 헤미 아게 | Manufacturing method of polycrystalline silicon |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3342161A (en) * | 1961-11-27 | 1967-09-19 | Siemens Ag | Apparatus for pyrolytic production of semiconductor material |
US3367303A (en) * | 1963-05-29 | 1968-02-06 | Monsanto Co | Chemical equipment |
US3502516A (en) * | 1964-11-06 | 1970-03-24 | Siemens Ag | Method for producing pure semiconductor material for electronic purposes |
US3980042A (en) * | 1972-03-21 | 1976-09-14 | Siemens Aktiengesellschaft | Vapor deposition apparatus with computer control |
DE2831816A1 (en) * | 1978-07-19 | 1980-01-31 | Siemens Ag | METHOD FOR DEPOSITING SILICON IN FINE CRYSTALLINE FORM |
-
1996
- 1996-04-02 IL IL11777096A patent/IL117770A0/en unknown
-
1997
- 1997-03-28 WO PCT/IL1997/000112 patent/WO1997036822A1/en active Application Filing
- 1997-03-28 AU AU20418/97A patent/AU2041897A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
IL117770A0 (en) | 1996-08-04 |
WO1997036822A1 (en) | 1997-10-09 |
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