JP2002093761A - 研磨方法、研磨装置、メッキ方法およびメッキ装置 - Google Patents

研磨方法、研磨装置、メッキ方法およびメッキ装置

Info

Publication number
JP2002093761A
JP2002093761A JP2000284260A JP2000284260A JP2002093761A JP 2002093761 A JP2002093761 A JP 2002093761A JP 2000284260 A JP2000284260 A JP 2000284260A JP 2000284260 A JP2000284260 A JP 2000284260A JP 2002093761 A JP2002093761 A JP 2002093761A
Authority
JP
Japan
Prior art keywords
polished
film
polishing
region
cathode member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000284260A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002093761A5 (enExample
Inventor
Shuzo Sato
修三 佐藤
Yuji Segawa
雄司 瀬川
Hiroshi Yubi
啓 由尾
Takeshi Nogami
毅 野上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2000284260A priority Critical patent/JP2002093761A/ja
Priority to US09/955,668 priority patent/US6808617B2/en
Priority to TW090123015A priority patent/TW503475B/zh
Priority to KR1020010058025A priority patent/KR100780257B1/ko
Publication of JP2002093761A publication Critical patent/JP2002093761A/ja
Priority to US10/765,791 priority patent/US20040182720A1/en
Priority to US11/590,723 priority patent/US20070051632A1/en
Publication of JP2002093761A5 publication Critical patent/JP2002093761A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP2000284260A 2000-09-19 2000-09-19 研磨方法、研磨装置、メッキ方法およびメッキ装置 Pending JP2002093761A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000284260A JP2002093761A (ja) 2000-09-19 2000-09-19 研磨方法、研磨装置、メッキ方法およびメッキ装置
US09/955,668 US6808617B2 (en) 2000-09-19 2001-09-19 Electrolytic polishing method
TW090123015A TW503475B (en) 2000-09-19 2001-09-19 Polishing method, polishing apparatus, plating method and plating apparatus
KR1020010058025A KR100780257B1 (ko) 2000-09-19 2001-09-19 연마 방법, 연마 장치, 도금 방법 및 도금 장치
US10/765,791 US20040182720A1 (en) 2000-09-19 2004-01-27 Polishing method, polishing apparatus, plating method, and plating apparatus
US11/590,723 US20070051632A1 (en) 2000-09-19 2006-10-31 Polishing method, polishing apparatus, plating method, and plating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000284260A JP2002093761A (ja) 2000-09-19 2000-09-19 研磨方法、研磨装置、メッキ方法およびメッキ装置

Publications (2)

Publication Number Publication Date
JP2002093761A true JP2002093761A (ja) 2002-03-29
JP2002093761A5 JP2002093761A5 (enExample) 2007-02-08

Family

ID=18768507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000284260A Pending JP2002093761A (ja) 2000-09-19 2000-09-19 研磨方法、研磨装置、メッキ方法およびメッキ装置

Country Status (4)

Country Link
US (3) US6808617B2 (enExample)
JP (1) JP2002093761A (enExample)
KR (1) KR100780257B1 (enExample)
TW (1) TW503475B (enExample)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003213500A (ja) * 2002-01-23 2003-07-30 Ebara Corp 基板処理装置および方法
JP2003311537A (ja) * 2002-04-30 2003-11-05 Sony Corp 研磨方法、研磨装置及び半導体装置の製造方法
WO2003090965A1 (en) * 2002-04-23 2003-11-06 Sony Corporation Polishing method, polishing device, and method of manufacturing semiconductor equipment
WO2003092945A1 (en) * 2002-04-30 2003-11-13 Sony Corporation Electrolytic polishing liquid, electrolytic polishing method and method for fabricating semiconductor device
JP2003326419A (ja) * 2002-05-09 2003-11-18 Sony Corp めっき方法、めっき装置、及び研磨方法、研磨装置、並びに半導体装置の製造方法
JP2004002910A (ja) * 2002-05-30 2004-01-08 Ebara Corp 電解加工方法及び装置
JP2004043952A (ja) * 2002-05-17 2004-02-12 Ebara Corp 電解加工方法及び装置
JP2004060027A (ja) * 2002-07-31 2004-02-26 Ebara Corp 電解加工方法及び装置
JP2004084054A (ja) * 2002-07-02 2004-03-18 Ebara Corp 電解加工方法及び装置
JP2004255479A (ja) * 2003-02-24 2004-09-16 Ebara Corp 電解加工方法及び電解加工装置
WO2004083494A1 (ja) * 2003-03-19 2004-09-30 Ebara Corporation 複合加工装置及び方法
JP2004299030A (ja) * 2003-04-01 2004-10-28 Misuzu Kogyo:Kk 電解砥粒研磨用研磨工具
JP2005120464A (ja) * 2003-09-26 2005-05-12 Ebara Corp 電解加工装置及び電解加工方法
JP2006511699A (ja) * 2002-07-22 2006-04-06 エーシーエム リサーチ，インコーポレイティド 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去
JP2006523951A (ja) * 2003-03-04 2006-10-19 アプライド　マテリアルズ　インコーポレイテッド 局所研磨制御のための方法および装置
JP2007123907A (ja) * 2005-10-28 2007-05-17 Applied Materials Inc 電圧モード電流制御
JP2007533116A (ja) * 2003-03-14 2007-11-15 ラム　リサーチ　コーポレーション 改良されたグローバルデュアルダマシン平坦化のためのシステム、方法、及び装置
JP2008529272A (ja) * 2005-01-21 2008-07-31 インターナショナル・ビジネス・マシーンズ・コーポレーション 電気化学的機械研磨のための方法及び組成物
DE102007057297A1 (de) 2007-03-26 2008-10-02 Tokyo Seimitsu Co. Ltd., Mitaka Elektrolytische Aufbereitungsvorrichtung und Verfahren zur elektrolytischen Aufbereitung, zum Waschen und Trocknen
JP2009522810A (ja) * 2006-01-06 2009-06-11 アプライド マテリアルズ インコーポレイテッド 動的処理制御による電気化学処理
JPWO2008140058A1 (ja) * 2007-05-09 2010-08-05 株式会社カンタム１４ シリコン基材の加工方法とその加工品および加工装置
JP2016225495A (ja) * 2015-06-01 2016-12-28 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
JP2018024899A (ja) * 2016-08-08 2018-02-15 株式会社荏原製作所 めっき装置、めっき装置の制御方法、及び、めっき装置の制御方法をコンピュータに実行させるためのプログラムを格納した記憶媒体
WO2018216445A1 (ja) * 2017-05-26 2018-11-29 株式会社荏原製作所 基板研磨装置および基板研磨方法
WO2020189004A1 (ja) * 2019-03-20 2020-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、および、半導体製造方法
JP2021027359A (ja) * 2019-08-05 2021-02-22 国立大学法人大阪大学 陽極酸化を援用した研磨方法
JP2023528977A (ja) * 2020-06-09 2023-07-06 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法
JP2023161308A (ja) * 2022-04-25 2023-11-07 株式会社ジェイテクトマシンシステム 陽極酸化援用研削装置及び陽極酸化援用研削方法

Families Citing this family (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US6299741B1 (en) * 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US7678245B2 (en) 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20030213703A1 (en) * 2002-05-16 2003-11-20 Applied Materials, Inc. Method and apparatus for substrate polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20040182721A1 (en) * 2003-03-18 2004-09-23 Applied Materials, Inc. Process control in electro-chemical mechanical polishing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7670468B2 (en) 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US7129160B2 (en) * 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7074113B1 (en) 2000-08-30 2006-07-11 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7220166B2 (en) 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7192335B2 (en) 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7134934B2 (en) 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7094131B2 (en) 2000-08-30 2006-08-22 Micron Technology, Inc. Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7160176B2 (en) 2000-08-30 2007-01-09 Micron Technology, Inc. Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US7153410B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7112121B2 (en) 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US6867448B1 (en) 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6866763B2 (en) * 2001-01-17 2005-03-15 Asm Nutool. Inc. Method and system monitoring and controlling film thickness profile during plating and electroetching
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7082345B2 (en) 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
WO2003001581A2 (en) * 2001-06-21 2003-01-03 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
TWI224531B (en) * 2001-09-11 2004-12-01 Ebara Corp Substrate processing apparatus and method
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
US6455434B1 (en) * 2001-10-23 2002-09-24 International Business Machines Corporation Prevention of slurry build-up within wafer topography during polishing
JP3807295B2 (ja) * 2001-11-30 2006-08-09 ソニー株式会社 研磨方法
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US6951599B2 (en) 2002-01-22 2005-10-04 Applied Materials, Inc. Electropolishing of metallic interconnects
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US20030199112A1 (en) 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
GB0208642D0 (en) * 2002-04-16 2002-05-22 Accentus Plc Metal implants
US6672716B2 (en) * 2002-04-29 2004-01-06 Xerox Corporation Multiple portion solid ink stick
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
TW567545B (en) * 2002-06-04 2003-12-21 Merck Kanto Advanced Chemical Electropolishing electrolytic solution formulation
US20040072445A1 (en) * 2002-07-11 2004-04-15 Applied Materials, Inc. Effective method to improve surface finish in electrochemically assisted CMP
US6999836B2 (en) 2002-08-01 2006-02-14 Applied Materials, Inc. Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
US7077975B2 (en) * 2002-08-08 2006-07-18 Micron Technology, Inc. Methods and compositions for removing group VIII metal-containing materials from surfaces
US7112270B2 (en) * 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
US6805786B2 (en) 2002-09-24 2004-10-19 Northrop Grumman Corporation Precious alloyed metal solder plating process
AU2003290932A1 (en) 2002-11-15 2004-06-15 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7704367B2 (en) * 2004-06-28 2010-04-27 Lam Research Corporation Method and apparatus for plating semiconductor wafers
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US20040259479A1 (en) * 2003-06-23 2004-12-23 Cabot Microelectronics Corporation Polishing pad for electrochemical-mechanical polishing
US7005306B1 (en) * 2003-07-11 2006-02-28 Nanometrics Incorporated Accurate thickness measurement of thin conductive film
KR100572825B1 (ko) * 2003-07-31 2006-04-25 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US20050121141A1 (en) * 2003-11-13 2005-06-09 Manens Antoine P. Real time process control for a polishing process
US7186164B2 (en) * 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7527723B2 (en) * 2004-01-16 2009-05-05 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
JP2005267942A (ja) * 2004-03-17 2005-09-29 Tohoku Pioneer Corp 有機ｅｌパネル及びその形成方法
US20050218009A1 (en) * 2004-04-02 2005-10-06 Jinshan Huo Electrochemical planarization system and method of electrochemical planarization
IL161771A0 (en) * 2004-05-04 2005-11-20 J G Systems Inc Method and composition to minimize dishing in semiconductor wafer processing
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US20070254558A1 (en) * 2004-08-27 2007-11-01 Masako Kodera Polishing Apparatus and Polishing Method
US20070205112A1 (en) * 2004-08-27 2007-09-06 Masako Kodera Polishing apparatus and polishing method
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US7435324B2 (en) * 2004-09-02 2008-10-14 Micron Technology, Inc. Noncontact localized electrochemical deposition of metal thin films
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US20080121529A1 (en) * 2004-12-22 2008-05-29 Yasushi Tohma Flattening Method and Flattening Apparatus
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
US20060163055A1 (en) * 2005-01-27 2006-07-27 International Business Machines Corporation Apparatus for direct plating on resistive liners
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US8070933B2 (en) * 2005-05-06 2011-12-06 Thielenhaus Microfinishing Corp. Electrolytic microfinishing of metallic workpieces
KR100731107B1 (ko) * 2005-12-29 2007-06-21 동부일렉트로닉스 주식회사 다마신 공정을 이용한 반도체 소자의 구리 금속 배선의형성 방법
JP2007194540A (ja) * 2006-01-23 2007-08-02 Toshiba Corp 半導体装置の製造方法及び研磨装置
US20070232510A1 (en) * 2006-03-29 2007-10-04 Kucera Alvin A Method and composition for selectively stripping silver from a substrate
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
US7422982B2 (en) * 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
KR100900225B1 (ko) * 2006-10-31 2009-06-02 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 구리배선 형성방법
KR100832024B1 (ko) * 2006-12-27 2008-05-26 주식회사 하이닉스반도체 반도체 소자의 절연막 평탄화방법
US8946828B2 (en) * 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US9039886B2 (en) * 2012-02-24 2015-05-26 Cheil Industries, Inc. Method of transferring graphene
US9738987B2 (en) 2012-09-14 2017-08-22 International Business Machines Corporation Electrochemical etching apparatus
US9062389B2 (en) * 2012-09-14 2015-06-23 International Business Machines Corporation Electrochemical etching apparatus
US9994968B2 (en) 2012-09-14 2018-06-12 International Business Machines Corporation Electrochemical etching apparatus
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
CN103924270B (zh) * 2014-04-18 2016-06-15 四川材料与工艺研究所 一种管状工件内表面均匀电化学处理方法
CN106567130A (zh) * 2015-10-10 2017-04-19 盛美半导体设备（上海）有限公司 一种改善晶圆粗糙度的方法
CN110904488B (zh) * 2019-12-09 2021-08-10 湖南湘投金天科技集团有限责任公司 一种微弧氧化方法及采用此方法所得钛合金结构件
US11965265B1 (en) 2020-01-30 2024-04-23 The United States Of America As Represented By The Secretary Of The Navy Hybrid electro-processing of a metal workpiece
CN111593381B (zh) * 2020-05-09 2022-04-19 西北工业大学 制备中空件内壁Ni-SiC复合镀层的阳极装置
KR102404459B1 (ko) * 2021-03-10 2022-06-07 가부시키가이샤 에바라 세이사꾸쇼 도금 장치 및 도금 방법
CN115874262B (zh) * 2023-01-13 2025-08-12 得力(中国-香港)有限公司 电解抛光装置、系统及方法
CN119820020B (zh) * 2025-03-20 2025-06-06 太原理工大学 一种薄带电解加工设备及其加工方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
US5544421A (en) * 1994-04-28 1996-08-13 Semitool, Inc. Semiconductor wafer processing system
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
JPH10318740A (ja) * 1997-05-15 1998-12-04 Dainippon Printing Co Ltd リードフレームのめっき膜厚測定方法
US5865984A (en) * 1997-06-30 1999-02-02 International Business Machines Corporation Electrochemical etching apparatus and method for spirally etching a workpiece
US6491808B2 (en) * 1997-09-11 2002-12-10 Canon Kabushiki Kaisha Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6447668B1 (en) * 1998-07-09 2002-09-10 Acm Research, Inc. Methods and apparatus for end-point detection
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
KR100549332B1 (ko) * 1998-12-30 2006-03-31 주식회사 하이닉스반도체 구리 박막의 화학기계적 연마 방법
ATE353377T1 (de) * 1999-07-26 2007-02-15 Tokyo Electron Ltd Plattierungsverfahren, -vorrichtung und -system
JP4037569B2 (ja) * 1999-08-10 2008-01-23 日新製鋼株式会社 溶融めっき金属帯のめっき付着量制御方法
KR100384786B1 (ko) * 1999-12-23 2003-06-18 주식회사 하이닉스반도체 층간 절연막의 평탄화 방법
JP2001240999A (ja) * 2000-02-29 2001-09-04 Mitsubishi Electric Corp めっき装置
US6482307B2 (en) * 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003213500A (ja) * 2002-01-23 2003-07-30 Ebara Corp 基板処理装置および方法
WO2003090965A1 (en) * 2002-04-23 2003-11-06 Sony Corporation Polishing method, polishing device, and method of manufacturing semiconductor equipment
JP2003311537A (ja) * 2002-04-30 2003-11-05 Sony Corp 研磨方法、研磨装置及び半導体装置の製造方法
WO2003092945A1 (en) * 2002-04-30 2003-11-13 Sony Corporation Electrolytic polishing liquid, electrolytic polishing method and method for fabricating semiconductor device
JP2003326419A (ja) * 2002-05-09 2003-11-18 Sony Corp めっき方法、めっき装置、及び研磨方法、研磨装置、並びに半導体装置の製造方法
JP2004043952A (ja) * 2002-05-17 2004-02-12 Ebara Corp 電解加工方法及び装置
JP2004002910A (ja) * 2002-05-30 2004-01-08 Ebara Corp 電解加工方法及び装置
JP2004084054A (ja) * 2002-07-02 2004-03-18 Ebara Corp 電解加工方法及び装置
JP2006511699A (ja) * 2002-07-22 2006-04-06 エーシーエム リサーチ，インコーポレイティド 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去
JP2004060027A (ja) * 2002-07-31 2004-02-26 Ebara Corp 電解加工方法及び装置
JP2004255479A (ja) * 2003-02-24 2004-09-16 Ebara Corp 電解加工方法及び電解加工装置
JP2006523951A (ja) * 2003-03-04 2006-10-19 アプライド　マテリアルズ　インコーポレイテッド 局所研磨制御のための方法および装置
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
JP2007533116A (ja) * 2003-03-14 2007-11-15 ラム　リサーチ　コーポレーション 改良されたグローバルデュアルダマシン平坦化のためのシステム、方法、及び装置
WO2004083494A1 (ja) * 2003-03-19 2004-09-30 Ebara Corporation 複合加工装置及び方法
US7563356B2 (en) 2003-03-19 2009-07-21 Ebara Corporation Composite processing apparatus and method
JP2004299030A (ja) * 2003-04-01 2004-10-28 Misuzu Kogyo:Kk 電解砥粒研磨用研磨工具
JP2005120464A (ja) * 2003-09-26 2005-05-12 Ebara Corp 電解加工装置及び電解加工方法
JP2008529272A (ja) * 2005-01-21 2008-07-31 インターナショナル・ビジネス・マシーンズ・コーポレーション 電気化学的機械研磨のための方法及び組成物
JP2007123907A (ja) * 2005-10-28 2007-05-17 Applied Materials Inc 電圧モード電流制御
JP2009522810A (ja) * 2006-01-06 2009-06-11 アプライド マテリアルズ インコーポレイテッド 動的処理制御による電気化学処理
DE102007057297A1 (de) 2007-03-26 2008-10-02 Tokyo Seimitsu Co. Ltd., Mitaka Elektrolytische Aufbereitungsvorrichtung und Verfahren zur elektrolytischen Aufbereitung, zum Waschen und Trocknen
JPWO2008140058A1 (ja) * 2007-05-09 2010-08-05 株式会社カンタム１４ シリコン基材の加工方法とその加工品および加工装置
JP2016225495A (ja) * 2015-06-01 2016-12-28 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
KR102380928B1 (ko) * 2016-08-08 2022-04-01 가부시키가이샤 에바라 세이사꾸쇼 도금 장치, 도금 장치의 제어 방법, 및, 도금 장치의 제어 방법을 컴퓨터에 실행시키기 위한 프로그램을 저장한 기억 매체
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US11098414B2 (en) 2016-08-08 2021-08-24 Ebara Corporation Plating system, a plating system control method, and a storage medium containing a program for causing a computer to execute the plating system control method
JP2018024899A (ja) * 2016-08-08 2018-02-15 株式会社荏原製作所 めっき装置、めっき装置の制御方法、及び、めっき装置の制御方法をコンピュータに実行させるためのプログラムを格納した記憶媒体
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