TW503475B - Polishing method, polishing apparatus, plating method and plating apparatus - Google Patents
Polishing method, polishing apparatus, plating method and plating apparatus Download PDFInfo
- Publication number
- TW503475B TW503475B TW090123015A TW90123015A TW503475B TW 503475 B TW503475 B TW 503475B TW 090123015 A TW090123015 A TW 090123015A TW 90123015 A TW90123015 A TW 90123015A TW 503475 B TW503475 B TW 503475B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- polishing
- area
- cathode
- electrolytic
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 415
- 238000000034 method Methods 0.000 title claims abstract description 173
- 238000007747 plating Methods 0.000 title claims abstract description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 211
- 229910052802 copper Inorganic materials 0.000 claims abstract description 211
- 239000010949 copper Substances 0.000 claims abstract description 211
- 239000013522 chelant Substances 0.000 claims abstract description 39
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 21
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 21
- 230000009920 chelation Effects 0.000 claims abstract description 11
- 239000003792 electrolyte Substances 0.000 claims description 65
- 238000009713 electroplating Methods 0.000 claims description 58
- 238000005406 washing Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 39
- 239000000126 substance Substances 0.000 claims description 35
- 238000002048 anodisation reaction Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 32
- 238000004364 calculation method Methods 0.000 claims description 22
- 230000005684 electric field Effects 0.000 claims description 22
- 239000000243 solution Substances 0.000 claims description 19
- 238000005259 measurement Methods 0.000 claims description 18
- 239000002738 chelating agent Substances 0.000 claims description 16
- 238000009499 grossing Methods 0.000 claims description 15
- 230000001680 brushing effect Effects 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 8
- 239000010970 precious metal Substances 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 238000007743 anodising Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 206010011469 Crying Diseases 0.000 claims description 2
- 239000012190 activator Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000001125 extrusion Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 abstract description 37
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000010828 elution Methods 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 502
- 239000010410 layer Substances 0.000 description 128
- 235000012431 wafers Nutrition 0.000 description 80
- 230000007246 mechanism Effects 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 34
- 230000004888 barrier function Effects 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 238000010586 diagram Methods 0.000 description 23
- 238000009826 distribution Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 230000009977 dual effect Effects 0.000 description 10
- 229910000831 Steel Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 239000010959 steel Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000011068 loading method Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- -1 knobs Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000693 micelle Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PZBPKYOVPCNPJY-UHFFFAOYSA-N 1-[2-(allyloxy)-2-(2,4-dichlorophenyl)ethyl]imidazole Chemical compound ClC1=CC(Cl)=CC=C1C(OCC=C)CN1C=NC=C1 PZBPKYOVPCNPJY-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Automation & Control Theory (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000284260A JP2002093761A (ja) | 2000-09-19 | 2000-09-19 | 研磨方法、研磨装置、メッキ方法およびメッキ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW503475B true TW503475B (en) | 2002-09-21 |
Family
ID=18768507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090123015A TW503475B (en) | 2000-09-19 | 2001-09-19 | Polishing method, polishing apparatus, plating method and plating apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6808617B2 (enExample) |
| JP (1) | JP2002093761A (enExample) |
| KR (1) | KR100780257B1 (enExample) |
| TW (1) | TW503475B (enExample) |
Families Citing this family (162)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7069101B1 (en) | 1999-07-29 | 2006-06-27 | Applied Materials, Inc. | Computer integrated manufacturing techniques |
| US6299741B1 (en) * | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
| US6640151B1 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
| US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US7678245B2 (en) | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
| US7670468B2 (en) | 2000-02-17 | 2010-03-02 | Applied Materials, Inc. | Contact assembly and method for electrochemical mechanical processing |
| US7066800B2 (en) * | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7303462B2 (en) | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
| US7077721B2 (en) | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
| US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
| US7125477B2 (en) | 2000-02-17 | 2006-10-24 | Applied Materials, Inc. | Contacts for electrochemical processing |
| US7029365B2 (en) | 2000-02-17 | 2006-04-18 | Applied Materials Inc. | Pad assembly for electrochemical mechanical processing |
| US6537144B1 (en) | 2000-02-17 | 2003-03-25 | Applied Materials, Inc. | Method and apparatus for enhanced CMP using metals having reductive properties |
| US6962524B2 (en) * | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6991526B2 (en) | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
| US20030213703A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Method and apparatus for substrate polishing |
| US7374644B2 (en) | 2000-02-17 | 2008-05-20 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6991528B2 (en) | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6979248B2 (en) | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7059948B2 (en) | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
| US7303662B2 (en) | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Contacts for electrochemical processing |
| US6708074B1 (en) | 2000-08-11 | 2004-03-16 | Applied Materials, Inc. | Generic interface builder |
| US7094131B2 (en) | 2000-08-30 | 2006-08-22 | Micron Technology, Inc. | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
| US7078308B2 (en) | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
| US7160176B2 (en) | 2000-08-30 | 2007-01-09 | Micron Technology, Inc. | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
| US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
| US7153195B2 (en) | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
| US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
| US7074113B1 (en) | 2000-08-30 | 2006-07-11 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
| US7134934B2 (en) | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
| US7153410B2 (en) | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
| US7112121B2 (en) | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| US7192335B2 (en) | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
| US6867448B1 (en) | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
| US7188142B2 (en) | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
| US6896776B2 (en) * | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
| US6866763B2 (en) * | 2001-01-17 | 2005-03-15 | Asm Nutool. Inc. | Method and system monitoring and controlling film thickness profile during plating and electroetching |
| US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
| US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
| US6899804B2 (en) | 2001-04-10 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
| US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7344432B2 (en) | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
| US7137879B2 (en) | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6910947B2 (en) | 2001-06-19 | 2005-06-28 | Applied Materials, Inc. | Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life |
| US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
| US6913938B2 (en) | 2001-06-19 | 2005-07-05 | Applied Materials, Inc. | Feedback control of plasma-enhanced chemical vapor deposition processes |
| US7047099B2 (en) | 2001-06-19 | 2006-05-16 | Applied Materials Inc. | Integrating tool, module, and fab level control |
| US7101799B2 (en) * | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
| US7082345B2 (en) | 2001-06-19 | 2006-07-25 | Applied Materials, Inc. | Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities |
| US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
| US7201936B2 (en) | 2001-06-19 | 2007-04-10 | Applied Materials, Inc. | Method of feedback control of sub-atmospheric chemical vapor deposition processes |
| WO2003001581A2 (en) * | 2001-06-21 | 2003-01-03 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
| US7337019B2 (en) | 2001-07-16 | 2008-02-26 | Applied Materials, Inc. | Integration of fault detection with run-to-run control |
| US6984198B2 (en) | 2001-08-14 | 2006-01-10 | Applied Materials, Inc. | Experiment management system, method and medium |
| JP2004002910A (ja) * | 2002-05-30 | 2004-01-08 | Ebara Corp | 電解加工方法及び装置 |
| TWI224531B (en) | 2001-09-11 | 2004-12-01 | Ebara Corp | Substrate processing apparatus and method |
| JP4409807B2 (ja) * | 2002-01-23 | 2010-02-03 | 株式会社荏原製作所 | 基板処理方法 |
| JP4310085B2 (ja) * | 2002-07-31 | 2009-08-05 | 株式会社荏原製作所 | 電解加工方法及び装置 |
| US20030072639A1 (en) * | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
| US6455434B1 (en) * | 2001-10-23 | 2002-09-24 | International Business Machines Corporation | Prevention of slurry build-up within wafer topography during polishing |
| JP3807295B2 (ja) * | 2001-11-30 | 2006-08-09 | ソニー株式会社 | 研磨方法 |
| US20070295611A1 (en) * | 2001-12-21 | 2007-12-27 | Liu Feng Q | Method and composition for polishing a substrate |
| US6951599B2 (en) | 2002-01-22 | 2005-10-04 | Applied Materials, Inc. | Electropolishing of metallic interconnects |
| US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
| US7225047B2 (en) | 2002-03-19 | 2007-05-29 | Applied Materials, Inc. | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements |
| US20030199112A1 (en) | 2002-03-22 | 2003-10-23 | Applied Materials, Inc. | Copper wiring module control |
| JP2003311540A (ja) * | 2002-04-30 | 2003-11-05 | Sony Corp | 電解研磨液、電解研磨方法及び半導体装置の製造方法 |
| GB0208642D0 (en) * | 2002-04-16 | 2002-05-22 | Accentus Plc | Metal implants |
| JP2003311538A (ja) * | 2002-04-23 | 2003-11-05 | Sony Corp | 研磨方法、研磨装置及び半導体装置の製造方法 |
| US6672716B2 (en) * | 2002-04-29 | 2004-01-06 | Xerox Corporation | Multiple portion solid ink stick |
| JP2003311537A (ja) * | 2002-04-30 | 2003-11-05 | Sony Corp | 研磨方法、研磨装置及び半導体装置の製造方法 |
| JP2003326419A (ja) * | 2002-05-09 | 2003-11-18 | Sony Corp | めっき方法、めっき装置、及び研磨方法、研磨装置、並びに半導体装置の製造方法 |
| US20030209523A1 (en) * | 2002-05-09 | 2003-11-13 | Applied Materials, Inc. | Planarization by chemical polishing for ULSI applications |
| JP4233331B2 (ja) * | 2002-05-17 | 2009-03-04 | 株式会社荏原製作所 | 電解加工方法及び装置 |
| TW567545B (en) * | 2002-06-04 | 2003-12-21 | Merck Kanto Advanced Chemical | Electropolishing electrolytic solution formulation |
| JP2004084054A (ja) * | 2002-07-02 | 2004-03-18 | Ebara Corp | 電解加工方法及び装置 |
| US20040072445A1 (en) * | 2002-07-11 | 2004-04-15 | Applied Materials, Inc. | Effective method to improve surface finish in electrochemically assisted CMP |
| CA2491951A1 (en) * | 2002-07-22 | 2004-01-29 | Acm Research, Inc. | Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers |
| CN100351725C (zh) | 2002-08-01 | 2007-11-28 | 应用材料有限公司 | 用于在先进工艺控制系统中处理歪曲的度量数据的方法、系统和介质 |
| US7077975B2 (en) * | 2002-08-08 | 2006-07-18 | Micron Technology, Inc. | Methods and compositions for removing group VIII metal-containing materials from surfaces |
| US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
| US7112270B2 (en) * | 2002-09-16 | 2006-09-26 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
| US6805786B2 (en) | 2002-09-24 | 2004-10-19 | Northrop Grumman Corporation | Precious alloyed metal solder plating process |
| JP2004255479A (ja) * | 2003-02-24 | 2004-09-16 | Ebara Corp | 電解加工方法及び電解加工装置 |
| US7272459B2 (en) | 2002-11-15 | 2007-09-18 | Applied Materials, Inc. | Method, system and medium for controlling manufacture process having multivariate input parameters |
| US7333871B2 (en) | 2003-01-21 | 2008-02-19 | Applied Materials, Inc. | Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools |
| US7704367B2 (en) * | 2004-06-28 | 2010-04-27 | Lam Research Corporation | Method and apparatus for plating semiconductor wafers |
| US7842169B2 (en) * | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
| US6939796B2 (en) * | 2003-03-14 | 2005-09-06 | Lam Research Corporation | System, method and apparatus for improved global dual-damascene planarization |
| WO2004083494A1 (ja) * | 2003-03-19 | 2004-09-30 | Ebara Corporation | 複合加工装置及び方法 |
| JP2004299030A (ja) * | 2003-04-01 | 2004-10-28 | Misuzu Kogyo:Kk | 電解砥粒研磨用研磨工具 |
| US7205228B2 (en) | 2003-06-03 | 2007-04-17 | Applied Materials, Inc. | Selective metal encapsulation schemes |
| US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
| US20040259479A1 (en) * | 2003-06-23 | 2004-12-23 | Cabot Microelectronics Corporation | Polishing pad for electrochemical-mechanical polishing |
| US7005306B1 (en) * | 2003-07-11 | 2006-02-28 | Nanometrics Incorporated | Accurate thickness measurement of thin conductive film |
| KR100572825B1 (ko) * | 2003-07-31 | 2006-04-25 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
| US7354332B2 (en) | 2003-08-04 | 2008-04-08 | Applied Materials, Inc. | Technique for process-qualifying a semiconductor manufacturing tool using metrology data |
| US7112122B2 (en) | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
| JP2005120464A (ja) * | 2003-09-26 | 2005-05-12 | Ebara Corp | 電解加工装置及び電解加工方法 |
| US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
| US20050121141A1 (en) * | 2003-11-13 | 2005-06-09 | Manens Antoine P. | Real time process control for a polishing process |
| US7186164B2 (en) * | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
| US7527723B2 (en) * | 2004-01-16 | 2009-05-05 | Ebara Corporation | Electrolytic processing apparatus and electrolytic processing method |
| US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7356377B2 (en) | 2004-01-29 | 2008-04-08 | Applied Materials, Inc. | System, method, and medium for monitoring performance of an advanced process control system |
| US7153777B2 (en) * | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
| JP2005267942A (ja) * | 2004-03-17 | 2005-09-29 | Tohoku Pioneer Corp | 有機ｅｌパネル及びその形成方法 |
| US20050218009A1 (en) * | 2004-04-02 | 2005-10-06 | Jinshan Huo | Electrochemical planarization system and method of electrochemical planarization |
| IL161771A0 (en) * | 2004-05-04 | 2005-11-20 | J G Systems Inc | Method and composition to minimize dishing in semiconductor wafer processing |
| US7096085B2 (en) | 2004-05-28 | 2006-08-22 | Applied Materials | Process control by distinguishing a white noise component of a process variance |
| US6961626B1 (en) | 2004-05-28 | 2005-11-01 | Applied Materials, Inc | Dynamic offset and feedback threshold |
| US20070254558A1 (en) * | 2004-08-27 | 2007-11-01 | Masako Kodera | Polishing Apparatus and Polishing Method |
| US20070205112A1 (en) * | 2004-08-27 | 2007-09-06 | Masako Kodera | Polishing apparatus and polishing method |
| US7566391B2 (en) | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
| US7435324B2 (en) * | 2004-09-02 | 2008-10-14 | Micron Technology, Inc. | Noncontact localized electrochemical deposition of metal thin films |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| US7520968B2 (en) | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
| JP2008524434A (ja) * | 2004-12-22 | 2008-07-10 | 株式会社荏原製作所 | 平坦化方法及び平坦化装置 |
| US20060163083A1 (en) * | 2005-01-21 | 2006-07-27 | International Business Machines Corporation | Method and composition for electro-chemical-mechanical polishing |
| US7655565B2 (en) * | 2005-01-26 | 2010-02-02 | Applied Materials, Inc. | Electroprocessing profile control |
| US20060163055A1 (en) * | 2005-01-27 | 2006-07-27 | International Business Machines Corporation | Apparatus for direct plating on resistive liners |
| US7427340B2 (en) | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
| US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
| US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
| US8070933B2 (en) * | 2005-05-06 | 2011-12-06 | Thielenhaus Microfinishing Corp. | Electrolytic microfinishing of metallic workpieces |
| US20070108066A1 (en) * | 2005-10-28 | 2007-05-17 | Applied Materials, Inc. | Voltage mode current control |
| KR100731107B1 (ko) * | 2005-12-29 | 2007-06-21 | 동부일렉트로닉스 주식회사 | 다마신 공정을 이용한 반도체 소자의 구리 금속 배선의형성 방법 |
| US20070158201A1 (en) * | 2006-01-06 | 2007-07-12 | Applied Materials, Inc. | Electrochemical processing with dynamic process control |
| JP2007194540A (ja) * | 2006-01-23 | 2007-08-02 | Toshiba Corp | 半導体装置の製造方法及び研磨装置 |
| US20070232510A1 (en) * | 2006-03-29 | 2007-10-04 | Kucera Alvin A | Method and composition for selectively stripping silver from a substrate |
| US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
| US7422982B2 (en) * | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
| KR100900225B1 (ko) * | 2006-10-31 | 2009-06-02 | 주식회사 하이닉스반도체 | 다마신 공정을 이용한 반도체 소자의 구리배선 형성방법 |
| KR100832024B1 (ko) * | 2006-12-27 | 2008-05-26 | 주식회사 하이닉스반도체 | 반도체 소자의 절연막 평탄화방법 |
| JP5116330B2 (ja) | 2007-03-26 | 2013-01-09 | 株式会社東京精密 | 電解加工ユニット装置及び電解加工洗浄乾燥方法 |
| EP2154269A4 (en) * | 2007-05-09 | 2012-11-21 | Quantum 14 Kk | PROCESS FOR PROCESSING SILICON BASE MATERIAL, OBJECT AND PROCESSING DEVICE PROCESSED BY THE METHOD |
| US8946828B2 (en) * | 2010-02-09 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having elevated structure and method of manufacturing the same |
| US9039886B2 (en) * | 2012-02-24 | 2015-05-26 | Cheil Industries, Inc. | Method of transferring graphene |
| US9994968B2 (en) | 2012-09-14 | 2018-06-12 | International Business Machines Corporation | Electrochemical etching apparatus |
| US9738987B2 (en) | 2012-09-14 | 2017-08-22 | International Business Machines Corporation | Electrochemical etching apparatus |
| US9062389B2 (en) * | 2012-09-14 | 2015-06-23 | International Business Machines Corporation | Electrochemical etching apparatus |
| US9227294B2 (en) * | 2013-12-31 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for chemical mechanical polishing |
| CN103924270B (zh) * | 2014-04-18 | 2016-06-15 | 四川材料与工艺研究所 | 一种管状工件内表面均匀电化学处理方法 |
| JP6321579B2 (ja) * | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
| CN106567130A (zh) * | 2015-10-10 | 2017-04-19 | 盛美半导体设备（上海）有限公司 | 一种改善晶圆粗糙度的方法 |
| JP6756540B2 (ja) * | 2016-08-08 | 2020-09-16 | 株式会社荏原製作所 | めっき装置、めっき装置の制御方法、及び、めっき装置の制御方法をコンピュータに実行させるためのプログラムを格納した記憶媒体 |
| JP6817896B2 (ja) * | 2017-05-26 | 2021-01-20 | 株式会社荏原製作所 | 基板研磨装置および基板研磨方法 |
| JP2020155614A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、基板処理方法、および、半導体製造方法 |
| JP7628677B2 (ja) * | 2019-08-05 | 2025-02-12 | 国立大学法人大阪大学 | 陽極酸化を援用した研磨方法 |
| CN110904488B (zh) * | 2019-12-09 | 2021-08-10 | 湖南湘投金天科技集团有限责任公司 | 一种微弧氧化方法及采用此方法所得钛合金结构件 |
| US11965265B1 (en) | 2020-01-30 | 2024-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Hybrid electro-processing of a metal workpiece |
| CN111593381B (zh) * | 2020-05-09 | 2022-04-19 | 西北工业大学 | 制备中空件内壁Ni-SiC复合镀层的阳极装置 |
| CN113782430B (zh) * | 2020-06-09 | 2025-09-12 | 盛美半导体设备(上海)股份有限公司 | 去除阻挡层的方法 |
| JP6937974B1 (ja) * | 2021-03-10 | 2021-09-22 | 株式会社荏原製作所 | めっき装置、およびめっき方法 |
| JP7686599B2 (ja) * | 2022-04-25 | 2025-06-02 | 株式会社ジェイテクトマシンシステム | 陽極酸化援用研削装置及び陽極酸化援用研削方法 |
| CN115874262B (zh) * | 2023-01-13 | 2025-08-12 | 得力(中国-香港)有限公司 | 电解抛光装置、系统及方法 |
| CN119820020B (zh) * | 2025-03-20 | 2025-06-06 | 太原理工大学 | 一种薄带电解加工设备及其加工方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5489341A (en) * | 1993-08-23 | 1996-02-06 | Semitool, Inc. | Semiconductor processing with non-jetting fluid stream discharge array |
| US5544421A (en) * | 1994-04-28 | 1996-08-13 | Semitool, Inc. | Semiconductor wafer processing system |
| US5567300A (en) * | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
| US5516412A (en) * | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
| US5620581A (en) * | 1995-11-29 | 1997-04-15 | Aiwa Research And Development, Inc. | Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring |
| JPH10318740A (ja) * | 1997-05-15 | 1998-12-04 | Dainippon Printing Co Ltd | リードフレームのめっき膜厚測定方法 |
| US5865984A (en) * | 1997-06-30 | 1999-02-02 | International Business Machines Corporation | Electrochemical etching apparatus and method for spirally etching a workpiece |
| US6491808B2 (en) * | 1997-09-11 | 2002-12-10 | Canon Kabushiki Kaisha | Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element |
| US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
| US6447668B1 (en) * | 1998-07-09 | 2002-09-10 | Acm Research, Inc. | Methods and apparatus for end-point detection |
| US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| KR100549332B1 (ko) * | 1998-12-30 | 2006-03-31 | 주식회사 하이닉스반도체 | 구리 박막의 화학기계적 연마 방법 |
| EP1231300B1 (en) * | 1999-07-26 | 2007-02-07 | Tokyo Electron Limited | Plating method and device, and plating system |
| JP4037569B2 (ja) * | 1999-08-10 | 2008-01-23 | 日新製鋼株式会社 | 溶融めっき金属帯のめっき付着量制御方法 |
| KR100384786B1 (ko) * | 1999-12-23 | 2003-06-18 | 주식회사 하이닉스반도체 | 층간 절연막의 평탄화 방법 |
| JP2001240999A (ja) * | 2000-02-29 | 2001-09-04 | Mitsubishi Electric Corp | めっき装置 |
| US6482307B2 (en) * | 2000-05-12 | 2002-11-19 | Nutool, Inc. | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
-
2000
- 2000-09-19 JP JP2000284260A patent/JP2002093761A/ja active Pending
-
2001
- 2001-09-19 TW TW090123015A patent/TW503475B/zh not_active IP Right Cessation
- 2001-09-19 US US09/955,668 patent/US6808617B2/en not_active Expired - Fee Related
- 2001-09-19 KR KR1020010058025A patent/KR100780257B1/ko not_active Expired - Fee Related
-
2004
- 2004-01-27 US US10/765,791 patent/US20040182720A1/en not_active Abandoned
-
2006
- 2006-10-31 US US11/590,723 patent/US20070051632A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR100780257B1 (ko) | 2007-11-28 |
| KR20020022617A (ko) | 2002-03-27 |
| US20020070126A1 (en) | 2002-06-13 |
| US6808617B2 (en) | 2004-10-26 |
| JP2002093761A (ja) | 2002-03-29 |
| US20070051632A1 (en) | 2007-03-08 |
| US20040182720A1 (en) | 2004-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW503475B (en) | Polishing method, polishing apparatus, plating method and plating apparatus | |
| JP2893012B2 (ja) | ワークピースを平坦化する方法および装置 | |
| TWI278378B (en) | Process control in electro-chemical mechanical polishing | |
| TW528649B (en) | Method and apparatus for electrochemical planarization of a workpiece | |
| US7160432B2 (en) | Method and composition for polishing a substrate | |
| KR100745102B1 (ko) | 반도체장치의 제조방법, 연마장치 및 연마방법 | |
| TW425665B (en) | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly | |
| US6848977B1 (en) | Polishing pad for electrochemical mechanical polishing | |
| US6368190B1 (en) | Electrochemical mechanical planarization apparatus and method | |
| TW200421546A (en) | Defect-free thin and planar film processing | |
| JP2002110592A (ja) | 研磨方法および研磨装置 | |
| US20040214510A1 (en) | Conductive polishing pad with anode and cathode | |
| US8268154B1 (en) | Selective electrochemical accelerator removal | |
| JP2000208443A (ja) | 電子装置の製造方法および製造装置 | |
| US6739953B1 (en) | Mechanical stress free processing method | |
| JP2009527129A (ja) | 基板上の導電性材料を電気化学的に研磨する方法 | |
| US7361582B2 (en) | Method of forming a damascene structure with integrated planar dielectric layers | |
| JP4644954B2 (ja) | 研磨装置 | |
| US7686935B2 (en) | Pad-assisted electropolishing | |
| JP4205914B2 (ja) | 半導体装置の製造方法及び製造装置 | |
| JP2001326204A (ja) | 半導体装置の製造方法および研磨方法 | |
| US20090266707A1 (en) | Pad-assisted electropolishing | |
| Mukherjee et al. | Planarization of copper damascene interconnects by spin-etch process: a chemical approach | |
| KR20070022367A (ko) | 연마 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |