JP2000019709A5 - - Google Patents

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Publication number
JP2000019709A5
JP2000019709A5 JP1998188518A JP18851898A JP2000019709A5 JP 2000019709 A5 JP2000019709 A5 JP 2000019709A5 JP 1998188518 A JP1998188518 A JP 1998188518A JP 18851898 A JP18851898 A JP 18851898A JP 2000019709 A5 JP2000019709 A5 JP 2000019709A5
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JP
Japan
Prior art keywords
wiring
semiconductor device
wirings
end side
terminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998188518A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000019709A (ja
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Publication date
Application filed filed Critical
Priority to JP18851898A priority Critical patent/JP2000019709A/ja
Priority claimed from JP18851898A external-priority patent/JP2000019709A/ja
Priority to TW088107933A priority patent/TW414941B/zh
Priority to US09/342,239 priority patent/US6495870B1/en
Priority to KR1019990025608A priority patent/KR100686630B1/ko
Publication of JP2000019709A publication Critical patent/JP2000019709A/ja
Priority to US10/282,044 priority patent/US7105873B2/en
Publication of JP2000019709A5 publication Critical patent/JP2000019709A5/ja
Priority to US11/504,738 priority patent/US7582921B2/en
Priority to KR1020060100427A priority patent/KR100706126B1/ko
Withdrawn legal-status Critical Current

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JP18851898A 1998-07-03 1998-07-03 半導体装置及びパターン形成方法 Withdrawn JP2000019709A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP18851898A JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法
TW088107933A TW414941B (en) 1998-07-03 1999-05-15 Semiconductor device and pattern forming method
US09/342,239 US6495870B1 (en) 1998-07-03 1999-06-29 Semiconductor device and method for patterning the semiconductor device in which line patterns terminate at different lengths to prevent the occurrence of a short or break
KR1019990025608A KR100686630B1 (ko) 1998-07-03 1999-06-30 반도체장치 및 패턴형성방법
US10/282,044 US7105873B2 (en) 1998-07-03 2002-10-29 Semiconductor device and method for patterning
US11/504,738 US7582921B2 (en) 1998-07-03 2006-08-16 Semiconductor device and method for patterning
KR1020060100427A KR100706126B1 (ko) 1998-07-03 2006-10-16 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18851898A JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007142778A Division JP2007256974A (ja) 2007-05-30 2007-05-30 パターン形成方法
JP2007208713A Division JP2008047904A (ja) 2007-08-10 2007-08-10 半導体装置

Publications (2)

Publication Number Publication Date
JP2000019709A JP2000019709A (ja) 2000-01-21
JP2000019709A5 true JP2000019709A5 (enExample) 2005-03-03

Family

ID=16225125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18851898A Withdrawn JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法

Country Status (4)

Country Link
US (3) US6495870B1 (enExample)
JP (1) JP2000019709A (enExample)
KR (2) KR100686630B1 (enExample)
TW (1) TW414941B (enExample)

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KR100809332B1 (ko) 2006-09-04 2008-03-05 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
JP4364226B2 (ja) * 2006-09-21 2009-11-11 株式会社東芝 半導体集積回路
KR100810616B1 (ko) * 2006-10-02 2008-03-06 삼성전자주식회사 미세 선폭의 도전성 라인들을 갖는 반도체소자 및 그제조방법
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KR101334174B1 (ko) * 2007-01-12 2013-11-28 삼성전자주식회사 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자
US7745876B2 (en) * 2007-02-21 2010-06-29 Samsung Electronics Co., Ltd. Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
JP4791999B2 (ja) * 2007-04-20 2011-10-12 株式会社東芝 半導体装置
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP4504402B2 (ja) * 2007-08-10 2010-07-14 株式会社東芝 不揮発性半導体記憶装置
KR101435520B1 (ko) 2008-08-11 2014-09-01 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
KR101540083B1 (ko) 2008-10-22 2015-07-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
KR101532012B1 (ko) * 2008-12-24 2015-06-30 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
US8043964B2 (en) * 2009-05-20 2011-10-25 Micron Technology, Inc. Method for providing electrical connections to spaced conductive lines
KR20110001292A (ko) * 2009-06-30 2011-01-06 삼성전자주식회사 패턴 구조물 및 이의 형성 방법
JP5431189B2 (ja) * 2010-01-29 2014-03-05 株式会社東芝 半導体装置
KR101179022B1 (ko) 2010-11-08 2012-08-31 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
JP2013197266A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 半導体装置およびその製造方法
TW201511204A (zh) * 2013-04-09 2015-03-16 Ｐｓ４盧克斯科公司 半導體裝置
US20150179563A1 (en) * 2013-07-22 2015-06-25 Kabushiki Kaisha Toshiba Semiconductor device
US9911693B2 (en) 2015-08-28 2018-03-06 Micron Technology, Inc. Semiconductor devices including conductive lines and methods of forming the semiconductor devices
US9735157B1 (en) 2016-03-18 2017-08-15 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9847339B2 (en) * 2016-04-12 2017-12-19 Macronix International Co., Ltd. Self-aligned multiple patterning semiconductor device fabrication
KR102545141B1 (ko) * 2017-12-01 2023-06-20 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US11521697B2 (en) 2019-01-30 2022-12-06 STMicroelectronics International, N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
US11393532B2 (en) 2019-04-24 2022-07-19 Stmicroelectronics International N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
TWI801752B (zh) * 2020-09-10 2023-05-11 力晶積成電子製造股份有限公司 半導體元件及其製造方法
US11652048B2 (en) * 2021-03-15 2023-05-16 Micron Technology, Inc. Semiconductor device and method for forming the structure of word-line avoiding short circuit thereof
CN115482868B (zh) * 2021-05-31 2025-06-24 长鑫存储技术有限公司 存储器结构和存储器版图
US12278182B2 (en) 2021-06-15 2025-04-15 Samsung Electronics Co., Ltd. Vertical semiconductor device
CN113594203B (zh) * 2021-07-27 2024-11-26 长江先进存储产业创新中心有限责任公司 相变存储器及其制作方法、定位方法和掩膜版
US12464710B2 (en) * 2021-09-27 2025-11-04 Micron Technology, Inc. Semiconductor memory device having the structure of word-lines to avoid short circuit and method of manufacturing the same

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