TW414941B - Semiconductor device and pattern forming method - Google Patents
Semiconductor device and pattern forming method Download PDFInfo
- Publication number
- TW414941B TW414941B TW088107933A TW88107933A TW414941B TW 414941 B TW414941 B TW 414941B TW 088107933 A TW088107933 A TW 088107933A TW 88107933 A TW88107933 A TW 88107933A TW 414941 B TW414941 B TW 414941B
- Authority
- TW
- Taiwan
- Prior art keywords
- wiring
- semiconductor device
- patent application
- end side
- scope
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Dram (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18851898A JP2000019709A (ja) | 1998-07-03 | 1998-07-03 | 半導体装置及びパターン形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW414941B true TW414941B (en) | 2000-12-11 |
Family
ID=16225125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088107933A TW414941B (en) | 1998-07-03 | 1999-05-15 | Semiconductor device and pattern forming method |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6495870B1 (enExample) |
| JP (1) | JP2000019709A (enExample) |
| KR (2) | KR100686630B1 (enExample) |
| TW (1) | TW414941B (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100454131B1 (ko) * | 2002-06-05 | 2004-10-26 | 삼성전자주식회사 | 라인형 패턴을 갖는 반도체 소자 및 그 레이아웃 방법 |
| JP2005202102A (ja) * | 2004-01-15 | 2005-07-28 | Fujitsu Ltd | 露光用マスク及びそのパターン補正方法並びに半導体装置の製造方法 |
| DE102004012553A1 (de) * | 2004-03-15 | 2005-10-13 | Infineon Technologies Ag | Speicherbauelement mit asymmetrischer Kontaktreihe |
| US7655387B2 (en) * | 2004-09-02 | 2010-02-02 | Micron Technology, Inc. | Method to align mask patterns |
| JP4498088B2 (ja) | 2004-10-07 | 2010-07-07 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
| KR100752644B1 (ko) | 2005-04-12 | 2007-08-29 | 삼성전자주식회사 | 반도체 소자의 셀영역 레이아웃 및 이를 이용한 콘택패드제조방법 |
| JP4866652B2 (ja) * | 2006-05-10 | 2012-02-01 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP4127711B2 (ja) * | 2006-05-31 | 2008-07-30 | 株式会社東芝 | 半導体メモリ |
| JP4921884B2 (ja) * | 2006-08-08 | 2012-04-25 | 株式会社東芝 | 半導体記憶装置 |
| KR100809332B1 (ko) | 2006-09-04 | 2008-03-05 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그 제조 방법 |
| JP4364226B2 (ja) * | 2006-09-21 | 2009-11-11 | 株式会社東芝 | 半導体集積回路 |
| KR100810616B1 (ko) * | 2006-10-02 | 2008-03-06 | 삼성전자주식회사 | 미세 선폭의 도전성 라인들을 갖는 반도체소자 및 그제조방법 |
| KR100929628B1 (ko) | 2006-11-16 | 2009-12-03 | 주식회사 하이닉스반도체 | 상변환 기억 소자 |
| KR101334174B1 (ko) * | 2007-01-12 | 2013-11-28 | 삼성전자주식회사 | 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자 |
| US7745876B2 (en) * | 2007-02-21 | 2010-06-29 | Samsung Electronics Co., Ltd. | Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same |
| JP4791999B2 (ja) * | 2007-04-20 | 2011-10-12 | 株式会社東芝 | 半導体装置 |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| JP4504402B2 (ja) * | 2007-08-10 | 2010-07-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR101435520B1 (ko) | 2008-08-11 | 2014-09-01 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자의 패턴 형성 방법 |
| KR101540083B1 (ko) | 2008-10-22 | 2015-07-30 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| KR101532012B1 (ko) * | 2008-12-24 | 2015-06-30 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자의 패턴 형성 방법 |
| US8043964B2 (en) * | 2009-05-20 | 2011-10-25 | Micron Technology, Inc. | Method for providing electrical connections to spaced conductive lines |
| KR20110001292A (ko) | 2009-06-30 | 2011-01-06 | 삼성전자주식회사 | 패턴 구조물 및 이의 형성 방법 |
| JP5431189B2 (ja) * | 2010-01-29 | 2014-03-05 | 株式会社東芝 | 半導体装置 |
| KR101179022B1 (ko) | 2010-11-08 | 2012-08-31 | 에스케이하이닉스 주식회사 | 반도체 소자 및 이의 제조 방법 |
| US8603891B2 (en) | 2012-01-20 | 2013-12-10 | Micron Technology, Inc. | Methods for forming vertical memory devices and apparatuses |
| JP2013197266A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 半導体装置およびその製造方法 |
| TW201511204A (zh) | 2013-04-09 | 2015-03-16 | Ps4盧克斯科公司 | 半導體裝置 |
| US20150179563A1 (en) * | 2013-07-22 | 2015-06-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US9911693B2 (en) | 2015-08-28 | 2018-03-06 | Micron Technology, Inc. | Semiconductor devices including conductive lines and methods of forming the semiconductor devices |
| US9735157B1 (en) | 2016-03-18 | 2017-08-15 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
| US9847339B2 (en) * | 2016-04-12 | 2017-12-19 | Macronix International Co., Ltd. | Self-aligned multiple patterning semiconductor device fabrication |
| KR102545141B1 (ko) * | 2017-12-01 | 2023-06-20 | 삼성전자주식회사 | 반도체 소자 및 그의 제조 방법 |
| US11521697B2 (en) | 2019-01-30 | 2022-12-06 | STMicroelectronics International, N.V. | Circuit and method for at speed detection of a word line fault condition in a memory circuit |
| US11393532B2 (en) | 2019-04-24 | 2022-07-19 | Stmicroelectronics International N.V. | Circuit and method for at speed detection of a word line fault condition in a memory circuit |
| TWI801752B (zh) * | 2020-09-10 | 2023-05-11 | 力晶積成電子製造股份有限公司 | 半導體元件及其製造方法 |
| US11652048B2 (en) * | 2021-03-15 | 2023-05-16 | Micron Technology, Inc. | Semiconductor device and method for forming the structure of word-line avoiding short circuit thereof |
| CN115482868B (zh) * | 2021-05-31 | 2025-06-24 | 长鑫存储技术有限公司 | 存储器结构和存储器版图 |
| US12278182B2 (en) | 2021-06-15 | 2025-04-15 | Samsung Electronics Co., Ltd. | Vertical semiconductor device |
| CN113594203B (zh) * | 2021-07-27 | 2024-11-26 | 长江先进存储产业创新中心有限责任公司 | 相变存储器及其制作方法、定位方法和掩膜版 |
| US12464710B2 (en) * | 2021-09-27 | 2025-11-04 | Micron Technology, Inc. | Semiconductor memory device having the structure of word-lines to avoid short circuit and method of manufacturing the same |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4287571A (en) * | 1979-09-11 | 1981-09-01 | International Business Machines Corporation | High density transistor arrays |
| JPS5778308A (en) | 1980-11-04 | 1982-05-17 | Nippon Telegraph & Telephone | Submarine cable connector |
| JPS6413290A (en) | 1987-07-07 | 1989-01-18 | Oki Electric Ind Co Ltd | Semiconductor memory |
| JP2633910B2 (ja) | 1988-06-08 | 1997-07-23 | 株式会社日立製作所 | 基板表面変形装置 |
| US5844842A (en) * | 1989-02-06 | 1998-12-01 | Hitachi, Ltd. | Nonvolatile semiconductor memory device |
| US5321280A (en) * | 1990-09-13 | 1994-06-14 | Nec Corporation | Composite semiconductor integrated circuit device |
| JP2884962B2 (ja) | 1992-10-30 | 1999-04-19 | 日本電気株式会社 | 半導体メモリ |
| JP3201026B2 (ja) | 1992-12-15 | 2001-08-20 | 株式会社日立製作所 | 固体素子の製造方法 |
| JPH07183301A (ja) | 1993-12-24 | 1995-07-21 | Toshiba Corp | 半導体装置 |
| US5801406A (en) * | 1994-01-18 | 1998-09-01 | Asic Technical Solutions | Variable size integrated circuit, mask programmable gate array |
| JPH07211617A (ja) | 1994-01-25 | 1995-08-11 | Hitachi Ltd | パターン形成方法,マスク、及び投影露光装置 |
| JPH08204016A (ja) | 1995-01-27 | 1996-08-09 | Mitsubishi Electric Corp | 自動配置配線方法,その装置及び半導体集積回路 |
| JP2783271B2 (ja) * | 1995-01-30 | 1998-08-06 | 日本電気株式会社 | 半導体記憶装置 |
| JP3333352B2 (ja) | 1995-04-12 | 2002-10-15 | 株式会社東芝 | 半導体記憶装置 |
| JPH08330536A (ja) | 1995-05-31 | 1996-12-13 | Hitachi Ltd | 半導体記憶装置およびこれを用いたコンピュータシステム |
| US6388314B1 (en) * | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
| JP3526981B2 (ja) | 1995-09-13 | 2004-05-17 | 株式会社ルネサステクノロジ | 半導体集積回路の配線構造 |
| JPH09107076A (ja) | 1995-10-11 | 1997-04-22 | Nec Corp | 不揮発性半導体記憶装置 |
| JP3477305B2 (ja) | 1996-02-08 | 2003-12-10 | オリンパス株式会社 | 固体撮像装置 |
| JPH09307075A (ja) | 1996-05-15 | 1997-11-28 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP2820121B2 (ja) | 1996-06-04 | 1998-11-05 | 日本電気株式会社 | 固体撮像装置 |
| JP3235715B2 (ja) | 1996-06-11 | 2001-12-04 | シャープ株式会社 | 半導体記憶装置 |
| US5990507A (en) * | 1996-07-09 | 1999-11-23 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor structures |
| JP3127953B2 (ja) | 1996-08-09 | 2001-01-29 | 日本電気株式会社 | 半導体記憶装置 |
| FR2760286B1 (fr) * | 1997-02-28 | 1999-04-16 | Sgs Thomson Microelectronics | Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe |
| JPH1113290A (ja) | 1997-06-19 | 1999-01-19 | Shimizu Corp | 既存建築物の免震化工法 |
-
1998
- 1998-07-03 JP JP18851898A patent/JP2000019709A/ja not_active Withdrawn
-
1999
- 1999-05-15 TW TW088107933A patent/TW414941B/zh not_active IP Right Cessation
- 1999-06-29 US US09/342,239 patent/US6495870B1/en not_active Expired - Lifetime
- 1999-06-30 KR KR1019990025608A patent/KR100686630B1/ko not_active Expired - Fee Related
-
2002
- 2002-10-29 US US10/282,044 patent/US7105873B2/en not_active Expired - Lifetime
-
2006
- 2006-08-16 US US11/504,738 patent/US7582921B2/en not_active Expired - Fee Related
- 2006-10-16 KR KR1020060100427A patent/KR100706126B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US7582921B2 (en) | 2009-09-01 |
| JP2000019709A (ja) | 2000-01-21 |
| KR100706126B1 (ko) | 2007-04-13 |
| US20030062550A1 (en) | 2003-04-03 |
| KR100686630B1 (ko) | 2007-02-23 |
| US20060273405A1 (en) | 2006-12-07 |
| US7105873B2 (en) | 2006-09-12 |
| US6495870B1 (en) | 2002-12-17 |
| KR20000011364A (ko) | 2000-02-25 |
| KR20060126859A (ko) | 2006-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |