TW414941B - Semiconductor device and pattern forming method - Google Patents

Semiconductor device and pattern forming method Download PDF

Info

Publication number
TW414941B
TW414941B TW088107933A TW88107933A TW414941B TW 414941 B TW414941 B TW 414941B TW 088107933 A TW088107933 A TW 088107933A TW 88107933 A TW88107933 A TW 88107933A TW 414941 B TW414941 B TW 414941B
Authority
TW
Taiwan
Prior art keywords
wiring
semiconductor device
patent application
end side
scope
Prior art date
Application number
TW088107933A
Other languages
English (en)
Chinese (zh)
Inventor
Tomonori Sekiguchi
Toshihiko Tanaka
Toshiaki Yamanaka
Takeshi Sakata
Katsutaka Kimura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW414941B publication Critical patent/TW414941B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/09Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48Data lines or contacts therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW088107933A 1998-07-03 1999-05-15 Semiconductor device and pattern forming method TW414941B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18851898A JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法

Publications (1)

Publication Number Publication Date
TW414941B true TW414941B (en) 2000-12-11

Family

ID=16225125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088107933A TW414941B (en) 1998-07-03 1999-05-15 Semiconductor device and pattern forming method

Country Status (4)

Country Link
US (3) US6495870B1 (enExample)
JP (1) JP2000019709A (enExample)
KR (2) KR100686630B1 (enExample)
TW (1) TW414941B (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454131B1 (ko) * 2002-06-05 2004-10-26 삼성전자주식회사 라인형 패턴을 갖는 반도체 소자 및 그 레이아웃 방법
JP2005202102A (ja) * 2004-01-15 2005-07-28 Fujitsu Ltd 露光用マスク及びそのパターン補正方法並びに半導体装置の製造方法
DE102004012553A1 (de) * 2004-03-15 2005-10-13 Infineon Technologies Ag Speicherbauelement mit asymmetrischer Kontaktreihe
US7655387B2 (en) * 2004-09-02 2010-02-02 Micron Technology, Inc. Method to align mask patterns
JP4498088B2 (ja) 2004-10-07 2010-07-07 株式会社東芝 半導体記憶装置およびその製造方法
KR100752644B1 (ko) 2005-04-12 2007-08-29 삼성전자주식회사 반도체 소자의 셀영역 레이아웃 및 이를 이용한 콘택패드제조방법
JP4866652B2 (ja) * 2006-05-10 2012-02-01 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4127711B2 (ja) * 2006-05-31 2008-07-30 株式会社東芝 半導体メモリ
JP4921884B2 (ja) * 2006-08-08 2012-04-25 株式会社東芝 半導体記憶装置
KR100809332B1 (ko) 2006-09-04 2008-03-05 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
JP4364226B2 (ja) * 2006-09-21 2009-11-11 株式会社東芝 半導体集積回路
KR100810616B1 (ko) * 2006-10-02 2008-03-06 삼성전자주식회사 미세 선폭의 도전성 라인들을 갖는 반도체소자 및 그제조방법
KR100929628B1 (ko) 2006-11-16 2009-12-03 주식회사 하이닉스반도체 상변환 기억 소자
KR101334174B1 (ko) * 2007-01-12 2013-11-28 삼성전자주식회사 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자
US7745876B2 (en) * 2007-02-21 2010-06-29 Samsung Electronics Co., Ltd. Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
JP4791999B2 (ja) * 2007-04-20 2011-10-12 株式会社東芝 半導体装置
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP4504402B2 (ja) * 2007-08-10 2010-07-14 株式会社東芝 不揮発性半導体記憶装置
KR101435520B1 (ko) 2008-08-11 2014-09-01 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
KR101540083B1 (ko) 2008-10-22 2015-07-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
KR101532012B1 (ko) * 2008-12-24 2015-06-30 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
US8043964B2 (en) * 2009-05-20 2011-10-25 Micron Technology, Inc. Method for providing electrical connections to spaced conductive lines
KR20110001292A (ko) 2009-06-30 2011-01-06 삼성전자주식회사 패턴 구조물 및 이의 형성 방법
JP5431189B2 (ja) * 2010-01-29 2014-03-05 株式会社東芝 半導体装置
KR101179022B1 (ko) 2010-11-08 2012-08-31 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
JP2013197266A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 半導体装置およびその製造方法
TW201511204A (zh) 2013-04-09 2015-03-16 Ps4盧克斯科公司 半導體裝置
US20150179563A1 (en) * 2013-07-22 2015-06-25 Kabushiki Kaisha Toshiba Semiconductor device
US9911693B2 (en) 2015-08-28 2018-03-06 Micron Technology, Inc. Semiconductor devices including conductive lines and methods of forming the semiconductor devices
US9735157B1 (en) 2016-03-18 2017-08-15 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9847339B2 (en) * 2016-04-12 2017-12-19 Macronix International Co., Ltd. Self-aligned multiple patterning semiconductor device fabrication
KR102545141B1 (ko) * 2017-12-01 2023-06-20 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US11521697B2 (en) 2019-01-30 2022-12-06 STMicroelectronics International, N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
US11393532B2 (en) 2019-04-24 2022-07-19 Stmicroelectronics International N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
TWI801752B (zh) * 2020-09-10 2023-05-11 力晶積成電子製造股份有限公司 半導體元件及其製造方法
US11652048B2 (en) * 2021-03-15 2023-05-16 Micron Technology, Inc. Semiconductor device and method for forming the structure of word-line avoiding short circuit thereof
CN115482868B (zh) * 2021-05-31 2025-06-24 长鑫存储技术有限公司 存储器结构和存储器版图
US12278182B2 (en) 2021-06-15 2025-04-15 Samsung Electronics Co., Ltd. Vertical semiconductor device
CN113594203B (zh) * 2021-07-27 2024-11-26 长江先进存储产业创新中心有限责任公司 相变存储器及其制作方法、定位方法和掩膜版
US12464710B2 (en) * 2021-09-27 2025-11-04 Micron Technology, Inc. Semiconductor memory device having the structure of word-lines to avoid short circuit and method of manufacturing the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
JPS5778308A (en) 1980-11-04 1982-05-17 Nippon Telegraph & Telephone Submarine cable connector
JPS6413290A (en) 1987-07-07 1989-01-18 Oki Electric Ind Co Ltd Semiconductor memory
JP2633910B2 (ja) 1988-06-08 1997-07-23 株式会社日立製作所 基板表面変形装置
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5321280A (en) * 1990-09-13 1994-06-14 Nec Corporation Composite semiconductor integrated circuit device
JP2884962B2 (ja) 1992-10-30 1999-04-19 日本電気株式会社 半導体メモリ
JP3201026B2 (ja) 1992-12-15 2001-08-20 株式会社日立製作所 固体素子の製造方法
JPH07183301A (ja) 1993-12-24 1995-07-21 Toshiba Corp 半導体装置
US5801406A (en) * 1994-01-18 1998-09-01 Asic Technical Solutions Variable size integrated circuit, mask programmable gate array
JPH07211617A (ja) 1994-01-25 1995-08-11 Hitachi Ltd パターン形成方法,マスク、及び投影露光装置
JPH08204016A (ja) 1995-01-27 1996-08-09 Mitsubishi Electric Corp 自動配置配線方法,その装置及び半導体集積回路
JP2783271B2 (ja) * 1995-01-30 1998-08-06 日本電気株式会社 半導体記憶装置
JP3333352B2 (ja) 1995-04-12 2002-10-15 株式会社東芝 半導体記憶装置
JPH08330536A (ja) 1995-05-31 1996-12-13 Hitachi Ltd 半導体記憶装置およびこれを用いたコンピュータシステム
US6388314B1 (en) * 1995-08-17 2002-05-14 Micron Technology, Inc. Single deposition layer metal dynamic random access memory
JP3526981B2 (ja) 1995-09-13 2004-05-17 株式会社ルネサステクノロジ 半導体集積回路の配線構造
JPH09107076A (ja) 1995-10-11 1997-04-22 Nec Corp 不揮発性半導体記憶装置
JP3477305B2 (ja) 1996-02-08 2003-12-10 オリンパス株式会社 固体撮像装置
JPH09307075A (ja) 1996-05-15 1997-11-28 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2820121B2 (ja) 1996-06-04 1998-11-05 日本電気株式会社 固体撮像装置
JP3235715B2 (ja) 1996-06-11 2001-12-04 シャープ株式会社 半導体記憶装置
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
JP3127953B2 (ja) 1996-08-09 2001-01-29 日本電気株式会社 半導体記憶装置
FR2760286B1 (fr) * 1997-02-28 1999-04-16 Sgs Thomson Microelectronics Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe
JPH1113290A (ja) 1997-06-19 1999-01-19 Shimizu Corp 既存建築物の免震化工法

Also Published As

Publication number Publication date
US7582921B2 (en) 2009-09-01
JP2000019709A (ja) 2000-01-21
KR100706126B1 (ko) 2007-04-13
US20030062550A1 (en) 2003-04-03
KR100686630B1 (ko) 2007-02-23
US20060273405A1 (en) 2006-12-07
US7105873B2 (en) 2006-09-12
US6495870B1 (en) 2002-12-17
KR20000011364A (ko) 2000-02-25
KR20060126859A (ko) 2006-12-11

Similar Documents

Publication Publication Date Title
TW414941B (en) Semiconductor device and pattern forming method
US7729195B2 (en) Semiconductor memory device having split word line driver circuit with layout patterns that provide increased integration density
JPH0792998B2 (ja) 半導体メモリアレイ
TWI783687B (zh) 記憶體子字驅動器電路及佈局
TW503396B (en) Semiconductor device
DE10338047A1 (de) Halbleiterspeichervorrichtung mit Speicherzellen, die mit hoher Dichte angeordnet sind
DE102021118560A1 (de) Leseverstärker und Halbleiterspeichervorrichtung mit dem Leseverstärker
JPS5832295A (ja) 半導体記憶装置
TW410465B (en) Semiconductor memory device
TW498331B (en) Semiconductor device
US6094390A (en) Semiconductor memory device with column gate and equalizer circuitry
JP3529534B2 (ja) 半導体記憶装置
KR100197576B1 (ko) 서브 더미 비트라인 및 서브 더미 워드라인을 가지는반도체 메모리 장치
JP4513074B2 (ja) 半導体メモリ装置
JP2008047904A (ja) 半導体装置
DE3939314C2 (enExample)
JPS59161061A (ja) 半導体記憶装置
JPH0982911A (ja) ダイナミック型半導体記憶装置
JP3159496B2 (ja) 半導体メモリ装置
JP4011941B2 (ja) 半導体記憶装置
JP2007256974A (ja) パターン形成方法
JPH02183489A (ja) ダイナミック型半導体記憶装置
JPH11145426A (ja) Dram及びそのメモリセルアレイ
JP2005197607A (ja) 半導体集積回路装置
KR100437143B1 (ko) 집적된 디램 메모리 셀 및 디램 메모리

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent