JP2000019709A - 半導体装置及びパターン形成方法 - Google Patents

半導体装置及びパターン形成方法

Info

Publication number
JP2000019709A
JP2000019709A JP18851898A JP18851898A JP2000019709A JP 2000019709 A JP2000019709 A JP 2000019709A JP 18851898 A JP18851898 A JP 18851898A JP 18851898 A JP18851898 A JP 18851898A JP 2000019709 A JP2000019709 A JP 2000019709A
Authority
JP
Japan
Prior art keywords
wiring
semiconductor device
line
wirings
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP18851898A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000019709A5 (enExample
Inventor
Tomonori Sekiguchi
知紀 関口
Toshihiko Tanaka
稔彦 田中
Toshiaki Yamanaka
俊明 山中
Takeshi Sakata
健 阪田
Katsutaka Kimura
勝高 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18851898A priority Critical patent/JP2000019709A/ja
Priority to TW088107933A priority patent/TW414941B/zh
Priority to US09/342,239 priority patent/US6495870B1/en
Priority to KR1019990025608A priority patent/KR100686630B1/ko
Publication of JP2000019709A publication Critical patent/JP2000019709A/ja
Priority to US10/282,044 priority patent/US7105873B2/en
Publication of JP2000019709A5 publication Critical patent/JP2000019709A5/ja
Priority to US11/504,738 priority patent/US7582921B2/en
Priority to KR1020060100427A priority patent/KR100706126B1/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/09Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48Data lines or contacts therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP18851898A 1998-07-03 1998-07-03 半導体装置及びパターン形成方法 Withdrawn JP2000019709A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP18851898A JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法
TW088107933A TW414941B (en) 1998-07-03 1999-05-15 Semiconductor device and pattern forming method
US09/342,239 US6495870B1 (en) 1998-07-03 1999-06-29 Semiconductor device and method for patterning the semiconductor device in which line patterns terminate at different lengths to prevent the occurrence of a short or break
KR1019990025608A KR100686630B1 (ko) 1998-07-03 1999-06-30 반도체장치 및 패턴형성방법
US10/282,044 US7105873B2 (en) 1998-07-03 2002-10-29 Semiconductor device and method for patterning
US11/504,738 US7582921B2 (en) 1998-07-03 2006-08-16 Semiconductor device and method for patterning
KR1020060100427A KR100706126B1 (ko) 1998-07-03 2006-10-16 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18851898A JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007142778A Division JP2007256974A (ja) 2007-05-30 2007-05-30 パターン形成方法
JP2007208713A Division JP2008047904A (ja) 2007-08-10 2007-08-10 半導体装置

Publications (2)

Publication Number Publication Date
JP2000019709A true JP2000019709A (ja) 2000-01-21
JP2000019709A5 JP2000019709A5 (enExample) 2005-03-03

Family

ID=16225125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18851898A Withdrawn JP2000019709A (ja) 1998-07-03 1998-07-03 半導体装置及びパターン形成方法

Country Status (4)

Country Link
US (3) US6495870B1 (enExample)
JP (1) JP2000019709A (enExample)
KR (2) KR100686630B1 (enExample)
TW (1) TW414941B (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004015056A (ja) * 2002-06-05 2004-01-15 Samsung Electronics Co Ltd ライン型パターンを有する半導体素子及びそのレイアウト方法
JP2005202102A (ja) * 2004-01-15 2005-07-28 Fujitsu Ltd 露光用マスク及びそのパターン補正方法並びに半導体装置の製造方法
KR100655343B1 (ko) 2004-10-07 2006-12-08 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치
JP2007294968A (ja) * 2007-04-20 2007-11-08 Toshiba Corp 半導体装置
KR100809332B1 (ko) 2006-09-04 2008-03-05 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
US7615815B2 (en) 2005-04-12 2009-11-10 Samsung Electronics Co., Ltd. Cell region layout of semiconductor device and method of forming contact pad using the same
JP2011159720A (ja) * 2010-01-29 2011-08-18 Toshiba Corp 半導体装置
KR101334174B1 (ko) * 2007-01-12 2013-11-28 삼성전자주식회사 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자
CN113594203A (zh) * 2021-07-27 2021-11-02 长江先进存储产业创新中心有限责任公司 相变存储器及其制作方法、定位方法和掩膜版

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004012553A1 (de) * 2004-03-15 2005-10-13 Infineon Technologies Ag Speicherbauelement mit asymmetrischer Kontaktreihe
US7655387B2 (en) * 2004-09-02 2010-02-02 Micron Technology, Inc. Method to align mask patterns
JP4866652B2 (ja) * 2006-05-10 2012-02-01 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4127711B2 (ja) * 2006-05-31 2008-07-30 株式会社東芝 半導体メモリ
JP4921884B2 (ja) * 2006-08-08 2012-04-25 株式会社東芝 半導体記憶装置
JP4364226B2 (ja) * 2006-09-21 2009-11-11 株式会社東芝 半導体集積回路
KR100810616B1 (ko) * 2006-10-02 2008-03-06 삼성전자주식회사 미세 선폭의 도전성 라인들을 갖는 반도체소자 및 그제조방법
KR100929628B1 (ko) 2006-11-16 2009-12-03 주식회사 하이닉스반도체 상변환 기억 소자
US7745876B2 (en) * 2007-02-21 2010-06-29 Samsung Electronics Co., Ltd. Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP4504402B2 (ja) * 2007-08-10 2010-07-14 株式会社東芝 不揮発性半導体記憶装置
KR101435520B1 (ko) 2008-08-11 2014-09-01 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
KR101540083B1 (ko) 2008-10-22 2015-07-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
KR101532012B1 (ko) * 2008-12-24 2015-06-30 삼성전자주식회사 반도체 소자 및 반도체 소자의 패턴 형성 방법
US8043964B2 (en) * 2009-05-20 2011-10-25 Micron Technology, Inc. Method for providing electrical connections to spaced conductive lines
KR20110001292A (ko) 2009-06-30 2011-01-06 삼성전자주식회사 패턴 구조물 및 이의 형성 방법
KR101179022B1 (ko) 2010-11-08 2012-08-31 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
JP2013197266A (ja) * 2012-03-19 2013-09-30 Toshiba Corp 半導体装置およびその製造方法
TW201511204A (zh) 2013-04-09 2015-03-16 Ps4盧克斯科公司 半導體裝置
US20150179563A1 (en) * 2013-07-22 2015-06-25 Kabushiki Kaisha Toshiba Semiconductor device
US9911693B2 (en) 2015-08-28 2018-03-06 Micron Technology, Inc. Semiconductor devices including conductive lines and methods of forming the semiconductor devices
US9735157B1 (en) 2016-03-18 2017-08-15 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9847339B2 (en) * 2016-04-12 2017-12-19 Macronix International Co., Ltd. Self-aligned multiple patterning semiconductor device fabrication
KR102545141B1 (ko) * 2017-12-01 2023-06-20 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US11521697B2 (en) 2019-01-30 2022-12-06 STMicroelectronics International, N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
US11393532B2 (en) 2019-04-24 2022-07-19 Stmicroelectronics International N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit
TWI801752B (zh) * 2020-09-10 2023-05-11 力晶積成電子製造股份有限公司 半導體元件及其製造方法
US11652048B2 (en) * 2021-03-15 2023-05-16 Micron Technology, Inc. Semiconductor device and method for forming the structure of word-line avoiding short circuit thereof
CN115482868B (zh) * 2021-05-31 2025-06-24 长鑫存储技术有限公司 存储器结构和存储器版图
US12278182B2 (en) 2021-06-15 2025-04-15 Samsung Electronics Co., Ltd. Vertical semiconductor device
US12464710B2 (en) * 2021-09-27 2025-11-04 Micron Technology, Inc. Semiconductor memory device having the structure of word-lines to avoid short circuit and method of manufacturing the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
JPS5778308A (en) 1980-11-04 1982-05-17 Nippon Telegraph & Telephone Submarine cable connector
JPS6413290A (en) 1987-07-07 1989-01-18 Oki Electric Ind Co Ltd Semiconductor memory
JP2633910B2 (ja) 1988-06-08 1997-07-23 株式会社日立製作所 基板表面変形装置
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5321280A (en) * 1990-09-13 1994-06-14 Nec Corporation Composite semiconductor integrated circuit device
JP2884962B2 (ja) 1992-10-30 1999-04-19 日本電気株式会社 半導体メモリ
JP3201026B2 (ja) 1992-12-15 2001-08-20 株式会社日立製作所 固体素子の製造方法
JPH07183301A (ja) 1993-12-24 1995-07-21 Toshiba Corp 半導体装置
US5801406A (en) * 1994-01-18 1998-09-01 Asic Technical Solutions Variable size integrated circuit, mask programmable gate array
JPH07211617A (ja) 1994-01-25 1995-08-11 Hitachi Ltd パターン形成方法,マスク、及び投影露光装置
JPH08204016A (ja) 1995-01-27 1996-08-09 Mitsubishi Electric Corp 自動配置配線方法,その装置及び半導体集積回路
JP2783271B2 (ja) * 1995-01-30 1998-08-06 日本電気株式会社 半導体記憶装置
JP3333352B2 (ja) 1995-04-12 2002-10-15 株式会社東芝 半導体記憶装置
JPH08330536A (ja) 1995-05-31 1996-12-13 Hitachi Ltd 半導体記憶装置およびこれを用いたコンピュータシステム
US6388314B1 (en) * 1995-08-17 2002-05-14 Micron Technology, Inc. Single deposition layer metal dynamic random access memory
JP3526981B2 (ja) 1995-09-13 2004-05-17 株式会社ルネサステクノロジ 半導体集積回路の配線構造
JPH09107076A (ja) 1995-10-11 1997-04-22 Nec Corp 不揮発性半導体記憶装置
JP3477305B2 (ja) 1996-02-08 2003-12-10 オリンパス株式会社 固体撮像装置
JPH09307075A (ja) 1996-05-15 1997-11-28 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2820121B2 (ja) 1996-06-04 1998-11-05 日本電気株式会社 固体撮像装置
JP3235715B2 (ja) 1996-06-11 2001-12-04 シャープ株式会社 半導体記憶装置
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
JP3127953B2 (ja) 1996-08-09 2001-01-29 日本電気株式会社 半導体記憶装置
FR2760286B1 (fr) * 1997-02-28 1999-04-16 Sgs Thomson Microelectronics Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe
JPH1113290A (ja) 1997-06-19 1999-01-19 Shimizu Corp 既存建築物の免震化工法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004015056A (ja) * 2002-06-05 2004-01-15 Samsung Electronics Co Ltd ライン型パターンを有する半導体素子及びそのレイアウト方法
JP2005202102A (ja) * 2004-01-15 2005-07-28 Fujitsu Ltd 露光用マスク及びそのパターン補正方法並びに半導体装置の製造方法
KR100655343B1 (ko) 2004-10-07 2006-12-08 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치
US7615815B2 (en) 2005-04-12 2009-11-10 Samsung Electronics Co., Ltd. Cell region layout of semiconductor device and method of forming contact pad using the same
US7767521B2 (en) 2005-04-12 2010-08-03 Samsung Electronics Co., Ltd. Cell region layout of semiconductor device and method of forming contact pad using the same
KR100809332B1 (ko) 2006-09-04 2008-03-05 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
KR101334174B1 (ko) * 2007-01-12 2013-11-28 삼성전자주식회사 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자
JP2007294968A (ja) * 2007-04-20 2007-11-08 Toshiba Corp 半導体装置
JP2011159720A (ja) * 2010-01-29 2011-08-18 Toshiba Corp 半導体装置
CN113594203A (zh) * 2021-07-27 2021-11-02 长江先进存储产业创新中心有限责任公司 相变存储器及其制作方法、定位方法和掩膜版

Also Published As

Publication number Publication date
TW414941B (en) 2000-12-11
US7582921B2 (en) 2009-09-01
KR100706126B1 (ko) 2007-04-13
US20030062550A1 (en) 2003-04-03
KR100686630B1 (ko) 2007-02-23
US20060273405A1 (en) 2006-12-07
US7105873B2 (en) 2006-09-12
US6495870B1 (en) 2002-12-17
KR20000011364A (ko) 2000-02-25
KR20060126859A (ko) 2006-12-11

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