JP2000019200A - 電位検出回路 - Google Patents

電位検出回路

Info

Publication number
JP2000019200A
JP2000019200A JP18614798A JP18614798A JP2000019200A JP 2000019200 A JP2000019200 A JP 2000019200A JP 18614798 A JP18614798 A JP 18614798A JP 18614798 A JP18614798 A JP 18614798A JP 2000019200 A JP2000019200 A JP 2000019200A
Authority
JP
Japan
Prior art keywords
potential
circuit
channel mos
transistor
detection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18614798A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000019200A5 (enExample
Inventor
Masaaki Mihara
雅章 三原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18614798A priority Critical patent/JP2000019200A/ja
Priority to TW087117643A priority patent/TW454089B/zh
Priority to US09/195,454 priority patent/US6281716B1/en
Priority to KR1019990005321A priority patent/KR100315607B1/ko
Publication of JP2000019200A publication Critical patent/JP2000019200A/ja
Publication of JP2000019200A5 publication Critical patent/JP2000019200A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Control Of Voltage And Current In General (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
JP18614798A 1998-07-01 1998-07-01 電位検出回路 Pending JP2000019200A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP18614798A JP2000019200A (ja) 1998-07-01 1998-07-01 電位検出回路
TW087117643A TW454089B (en) 1998-07-01 1998-10-26 Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not
US09/195,454 US6281716B1 (en) 1998-07-01 1998-11-18 Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not
KR1019990005321A KR100315607B1 (ko) 1998-07-01 1999-02-13 전위 발생 회로의 출력 전위가 목표 전위에 도달하는지의 여부를 검출하기 위한 전위 검출 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18614798A JP2000019200A (ja) 1998-07-01 1998-07-01 電位検出回路

Publications (2)

Publication Number Publication Date
JP2000019200A true JP2000019200A (ja) 2000-01-21
JP2000019200A5 JP2000019200A5 (enExample) 2005-09-15

Family

ID=16183212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18614798A Pending JP2000019200A (ja) 1998-07-01 1998-07-01 電位検出回路

Country Status (4)

Country Link
US (1) US6281716B1 (enExample)
JP (1) JP2000019200A (enExample)
KR (1) KR100315607B1 (enExample)
TW (1) TW454089B (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002032991A (ja) * 2000-07-12 2002-01-31 United Microelectron Corp 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP2003043075A (ja) * 2001-08-02 2003-02-13 Fuji Electric Co Ltd 電流検出回路
US6643207B2 (en) 2002-01-15 2003-11-04 Mitsubishi Denki Kabushiki Kaisha High-voltage detection circuit for a semiconductor memory
US6774703B2 (en) 2001-09-14 2004-08-10 Renesas Technology Corp. Semiconductor device
US6788577B2 (en) 2001-12-28 2004-09-07 Renesas Technology Corp. Nonvolatile semiconductor memory
JP2005267789A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 半導体記憶装置
JP2009074973A (ja) * 2007-09-21 2009-04-09 Toshiba Corp 負電圧検知回路及び負電圧検知回路を備えた半導体集積回路
JP2011008514A (ja) * 2009-06-25 2011-01-13 Renesas Electronics Corp 半導体装置
JP2011203112A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 電流検出回路
CN102882366A (zh) * 2012-09-06 2013-01-16 海能达通信股份有限公司 一种纹波电源装置及其提供带纹波的直流电压的方法
KR20150107628A (ko) * 2014-03-13 2015-09-23 세이코 인스트루 가부시키가이샤 전압 검출 회로

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748841B2 (ja) * 2000-10-24 2011-08-17 ルネサスエレクトロニクス株式会社 半導体装置
US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
KR100675273B1 (ko) * 2001-05-17 2007-01-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 및 지연 시간 조절회로
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
KR100498505B1 (ko) * 2003-07-15 2005-07-01 삼성전자주식회사 승압전압 발생회로 및 승압전압 발생방법
KR100566302B1 (ko) * 2003-10-31 2006-03-30 주식회사 하이닉스반도체 파워업 신호 발생 장치
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7692477B1 (en) * 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7012461B1 (en) * 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
WO2006025018A2 (en) * 2004-09-02 2006-03-09 Philips Intellectual Property & Standards Gmbh Device and method for comparing two supply voltages
WO2008047416A1 (fr) * 2006-10-18 2008-04-24 Spansion Llc Circuit de détection de tension
US8125243B1 (en) 2007-03-12 2012-02-28 Cypress Semiconductor Corporation Integrity checking of configurable data of programmable device
US8060661B1 (en) 2007-03-27 2011-11-15 Cypress Semiconductor Corporation Interface circuit and method for programming or communicating with an integrated circuit via a power supply pin
JP5283078B2 (ja) * 2009-01-13 2013-09-04 セイコーインスツル株式会社 検出回路及びセンサ装置
JP5482126B2 (ja) * 2009-11-13 2014-04-23 ミツミ電機株式会社 参照電圧発生回路および受信回路
KR101094401B1 (ko) * 2010-03-31 2011-12-15 주식회사 하이닉스반도체 반도체 집적회로의 내부전압 발생기
CN102545599B (zh) * 2010-12-07 2015-08-19 北大方正集团有限公司 开关稳压电源及其稳压方法
US8570077B2 (en) * 2010-12-17 2013-10-29 Qualcomm Incorporated Methods and implementation of low-power power-on control circuits
US12040705B2 (en) * 2021-08-20 2024-07-16 Semiconductor Components Industries, Llc Self clocked low power doubling charge pump

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
JPH03261871A (ja) 1990-03-12 1991-11-21 Fujitsu Ltd 電流測定装置
US5166549A (en) * 1991-08-07 1992-11-24 General Electric Company Zero-voltage crossing detector for soft-switching devices
JP2761687B2 (ja) * 1991-12-19 1998-06-04 三菱電機株式会社 電圧レベル検出回路
JPH07229932A (ja) * 1994-02-17 1995-08-29 Toshiba Corp 電位検知回路
JP3626521B2 (ja) 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
JP3597281B2 (ja) * 1995-11-28 2004-12-02 株式会社ルネサステクノロジ 電位検出回路及び半導体集積回路
JP3676904B2 (ja) * 1997-04-11 2005-07-27 株式会社ルネサステクノロジ 半導体集積回路
US5942921A (en) * 1997-12-19 1999-08-24 Advanced Micro Devices, Inc. Differential comparator with an extended input range

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002032991A (ja) * 2000-07-12 2002-01-31 United Microelectron Corp 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP2003043075A (ja) * 2001-08-02 2003-02-13 Fuji Electric Co Ltd 電流検出回路
US6774703B2 (en) 2001-09-14 2004-08-10 Renesas Technology Corp. Semiconductor device
US6788577B2 (en) 2001-12-28 2004-09-07 Renesas Technology Corp. Nonvolatile semiconductor memory
US6643207B2 (en) 2002-01-15 2003-11-04 Mitsubishi Denki Kabushiki Kaisha High-voltage detection circuit for a semiconductor memory
JP2005267789A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 半導体記憶装置
JP2009074973A (ja) * 2007-09-21 2009-04-09 Toshiba Corp 負電圧検知回路及び負電圧検知回路を備えた半導体集積回路
US7733730B2 (en) 2007-09-21 2010-06-08 Kabushiki Kaisha Toshiba Negative voltage detection circuit and semiconductor integrated circuit
JP2011008514A (ja) * 2009-06-25 2011-01-13 Renesas Electronics Corp 半導体装置
JP2011203112A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 電流検出回路
CN102882366A (zh) * 2012-09-06 2013-01-16 海能达通信股份有限公司 一种纹波电源装置及其提供带纹波的直流电压的方法
KR20150107628A (ko) * 2014-03-13 2015-09-23 세이코 인스트루 가부시키가이샤 전압 검출 회로
JP2015176229A (ja) * 2014-03-13 2015-10-05 セイコーインスツル株式会社 電圧検出回路
US9933494B2 (en) 2014-03-13 2018-04-03 Sii Semiconductor Corporation Voltage detection circuit
KR102180505B1 (ko) 2014-03-13 2020-11-18 에이블릭 가부시키가이샤 전압 검출 회로

Also Published As

Publication number Publication date
TW454089B (en) 2001-09-11
KR20000011175A (ko) 2000-02-25
US6281716B1 (en) 2001-08-28
KR100315607B1 (ko) 2001-12-12

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