TW454089B - Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not - Google Patents

Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not Download PDF

Info

Publication number
TW454089B
TW454089B TW087117643A TW87117643A TW454089B TW 454089 B TW454089 B TW 454089B TW 087117643 A TW087117643 A TW 087117643A TW 87117643 A TW87117643 A TW 87117643A TW 454089 B TW454089 B TW 454089B
Authority
TW
Taiwan
Prior art keywords
circuit
potential
transistor
channel
voltage
Prior art date
Application number
TW087117643A
Other languages
English (en)
Chinese (zh)
Inventor
Masaaki Mihara
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW454089B publication Critical patent/TW454089B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Control Of Voltage And Current In General (AREA)
TW087117643A 1998-07-01 1998-10-26 Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not TW454089B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18614798A JP2000019200A (ja) 1998-07-01 1998-07-01 電位検出回路

Publications (1)

Publication Number Publication Date
TW454089B true TW454089B (en) 2001-09-11

Family

ID=16183212

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087117643A TW454089B (en) 1998-07-01 1998-10-26 Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not

Country Status (4)

Country Link
US (1) US6281716B1 (enExample)
JP (1) JP2000019200A (enExample)
KR (1) KR100315607B1 (enExample)
TW (1) TW454089B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102545599A (zh) * 2010-12-07 2012-07-04 北大方正集团有限公司 开关稳压电源及其稳压方法
TWI461713B (zh) * 2009-01-13 2014-11-21 Seiko Instr Inc 檢測電路及感測裝置

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102413B2 (ja) * 2000-07-12 2012-12-19 ユナイテッド・マイクロエレクトロニクス・コーポレイション 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP4748841B2 (ja) * 2000-10-24 2011-08-17 ルネサスエレクトロニクス株式会社 半導体装置
US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
KR100675273B1 (ko) * 2001-05-17 2007-01-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 및 지연 시간 조절회로
JP4492003B2 (ja) * 2001-08-02 2010-06-30 富士電機システムズ株式会社 電流検出回路
JP2003086700A (ja) 2001-09-14 2003-03-20 Mitsubishi Electric Corp 半導体装置
JP2003203488A (ja) 2001-12-28 2003-07-18 Mitsubishi Electric Corp 不揮発性半導体メモリ
JP2003207527A (ja) 2002-01-15 2003-07-25 Mitsubishi Electric Corp 高電圧検出回路
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
KR100498505B1 (ko) * 2003-07-15 2005-07-01 삼성전자주식회사 승압전압 발생회로 및 승압전압 발생방법
KR100566302B1 (ko) * 2003-10-31 2006-03-30 주식회사 하이닉스반도체 파워업 신호 발생 장치
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7012461B1 (en) * 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
JP4427365B2 (ja) * 2004-03-19 2010-03-03 株式会社東芝 半導体記憶装置
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
EP1790076A2 (en) * 2004-09-02 2007-05-30 Philips Intellectual Property & Standards GmbH Device and method for comparing two supply voltages
WO2008047416A1 (fr) * 2006-10-18 2008-04-24 Spansion Llc Circuit de détection de tension
US8125243B1 (en) 2007-03-12 2012-02-28 Cypress Semiconductor Corporation Integrity checking of configurable data of programmable device
US8060661B1 (en) 2007-03-27 2011-11-15 Cypress Semiconductor Corporation Interface circuit and method for programming or communicating with an integrated circuit via a power supply pin
JP4660526B2 (ja) * 2007-09-21 2011-03-30 株式会社東芝 負電圧検知回路を備えた半導体集積回路
JP5318676B2 (ja) * 2009-06-25 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP5482126B2 (ja) * 2009-11-13 2014-04-23 ミツミ電機株式会社 参照電圧発生回路および受信回路
JP2011203112A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 電流検出回路
KR101094401B1 (ko) * 2010-03-31 2011-12-15 주식회사 하이닉스반도체 반도체 집적회로의 내부전압 발생기
US8570077B2 (en) 2010-12-17 2013-10-29 Qualcomm Incorporated Methods and implementation of low-power power-on control circuits
CN102882366B (zh) * 2012-09-06 2015-06-17 海能达通信股份有限公司 一种纹波电源装置及其提供带纹波的直流电压的方法
JP6321411B2 (ja) * 2014-03-13 2018-05-09 エイブリック株式会社 電圧検出回路
US12040705B2 (en) * 2021-08-20 2024-07-16 Semiconductor Components Industries, Llc Self clocked low power doubling charge pump

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
JPH03261871A (ja) 1990-03-12 1991-11-21 Fujitsu Ltd 電流測定装置
US5166549A (en) * 1991-08-07 1992-11-24 General Electric Company Zero-voltage crossing detector for soft-switching devices
JP2761687B2 (ja) * 1991-12-19 1998-06-04 三菱電機株式会社 電圧レベル検出回路
JPH07229932A (ja) * 1994-02-17 1995-08-29 Toshiba Corp 電位検知回路
JP3626521B2 (ja) 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
JP3597281B2 (ja) * 1995-11-28 2004-12-02 株式会社ルネサステクノロジ 電位検出回路及び半導体集積回路
JP3676904B2 (ja) * 1997-04-11 2005-07-27 株式会社ルネサステクノロジ 半導体集積回路
US5942921A (en) * 1997-12-19 1999-08-24 Advanced Micro Devices, Inc. Differential comparator with an extended input range

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461713B (zh) * 2009-01-13 2014-11-21 Seiko Instr Inc 檢測電路及感測裝置
CN102545599A (zh) * 2010-12-07 2012-07-04 北大方正集团有限公司 开关稳压电源及其稳压方法
CN102545599B (zh) * 2010-12-07 2015-08-19 北大方正集团有限公司 开关稳压电源及其稳压方法

Also Published As

Publication number Publication date
KR100315607B1 (ko) 2001-12-12
JP2000019200A (ja) 2000-01-21
US6281716B1 (en) 2001-08-28
KR20000011175A (ko) 2000-02-25

Similar Documents

Publication Publication Date Title
TW454089B (en) Potential detect circuit for detecting whether output potential of potential generation circuit has arrived at target potential or not
JP4746326B2 (ja) 不揮発性半導体記憶装置
JP4344769B2 (ja) 低電圧動作のメモリ検知回路および方法
TWI505286B (zh) 非揮發記憶體之低雜訊感測放大器陣列和方法
CN105185409B (zh) 具有两个独立控制电压泵的存储器架构
JP4426361B2 (ja) 不揮発性半導体記憶装置
KR100458409B1 (ko) 전압 발생 회로
CN100524506C (zh) 具有快速预充电位线的存储器阵列
US8498164B1 (en) Variable impedance memory device biasing circuits and methods
TW201225086A (en) Structures and methods for reading out Non-Volatile Memory using referencing cells
JP2008535140A (ja) ソース線バイアス誤差に対する補償を用いる不揮発性メモリおよび方法
JP2008535141A (ja) ソース線バイアス誤差に対してコントロールゲート補償を用いる不揮発性メモリおよび方法
KR970003266A (ko) 비휘발성 반도체 메모리
KR20120005815A (ko) 전압 스위치 회로 및 이를 이용한 불휘발성 메모리 장치
US20170110186A1 (en) Semiconductor memory device configured to sense memory cell threshold voltages in ascending order
KR100281668B1 (ko) 멀티레벨정보를저장할수있는메모리셀을구비한비휘발성반도체메모리장치및데이터기입방법
JP3532721B2 (ja) 定電圧発生回路
JPH04186598A (ja) 不揮発性半導体記憶装置
WO2001001420A1 (fr) Circuit de memoire non volatile
US8254194B2 (en) Sense amplifier with reduced area occupation for semiconductor memories
US7184296B2 (en) Memory device
JP4593668B2 (ja) 不揮発性メモリにおける補償感知のための基準センス増幅器および方法
US5719490A (en) Dual sourced voltage supply circuit
US7538584B2 (en) Sense amplifier
CN101097779A (zh) 非易失性半导体存储器件

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees