IT1152980B - Dispositivo a circuito integrato a semiconduttori - Google Patents

Dispositivo a circuito integrato a semiconduttori

Info

Publication number
IT1152980B
IT1152980B IT2197182A IT2197182A IT1152980B IT 1152980 B IT1152980 B IT 1152980B IT 2197182 A IT2197182 A IT 2197182A IT 2197182 A IT2197182 A IT 2197182A IT 1152980 B IT1152980 B IT 1152980B
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
input
unit cell
Prior art date
Application number
IT2197182A
Other languages
English (en)
Italian (it)
Other versions
IT8221971A0 (it
Inventor
Takahashi Yoshikazu
Itoh Tsuneo
Takechi Makoto
Original Assignee
Hitachi Ltd
Hitachi Microcumputer Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcumputer Eng filed Critical Hitachi Ltd
Publication of IT8221971A0 publication Critical patent/IT8221971A0/it
Application granted granted Critical
Publication of IT1152980B publication Critical patent/IT1152980B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/998—Input and output buffer/driver structures
    • H10W72/019—
    • H10W72/90—
    • H10W70/60—
    • H10W72/536—
    • H10W72/5524—
    • H10W72/59—
    • H10W72/923—
    • H10W72/932—
    • H10W72/952—
    • H10W72/983—

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
IT2197182A 1981-06-22 1982-06-21 Dispositivo a circuito integrato a semiconduttori IT1152980B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9535781A JPS57211248A (en) 1981-06-22 1981-06-22 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
IT8221971A0 IT8221971A0 (it) 1982-06-21
IT1152980B true IT1152980B (it) 1987-01-14

Family

ID=14135390

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2197182A IT1152980B (it) 1981-06-22 1982-06-21 Dispositivo a circuito integrato a semiconduttori

Country Status (10)

Country Link
US (1) US4893168A (enExample)
JP (1) JPS57211248A (enExample)
KR (1) KR910000155B1 (enExample)
DE (1) DE3223276A1 (enExample)
FR (1) FR2508255B1 (enExample)
GB (1) GB2104284B (enExample)
HK (1) HK54686A (enExample)
IT (1) IT1152980B (enExample)
MY (1) MY8600554A (enExample)
SG (1) SG20786G (enExample)

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JPS58124263A (ja) * 1982-01-20 1983-07-23 Toshiba Corp 半導体装置
JPS58213448A (ja) * 1982-06-07 1983-12-12 Hitachi Ltd 負荷駆動方式
US4409499A (en) * 1982-06-14 1983-10-11 Standard Microsystems Corporation High-speed merged plane logic function array
JPS5941852A (ja) * 1982-06-24 1984-03-08 ストレイジ・テクノロジ−・パ−トナ−ズ 集積回路チツプ
US4870471A (en) * 1982-09-30 1989-09-26 Mitsubishi Denki Kabushiki Kaisha Complementary metal-oxide semiconductor integrated circuit device with isolation
US5281545A (en) * 1982-12-10 1994-01-25 Ricoh Company, Ltd. Processes for manufacturing a semiconductor device
KR910008521B1 (ko) * 1983-01-31 1991-10-18 가부시기가이샤 히다찌세이사꾸쇼 반도체집적회로
JPS59139646A (ja) * 1983-01-31 1984-08-10 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
JPS59167122A (ja) * 1983-03-11 1984-09-20 Nec Corp 入出力バツフア−
US4568961A (en) * 1983-03-11 1986-02-04 Rca Corporation Variable geometry automated universal array
JPS607147A (ja) * 1983-06-24 1985-01-14 Mitsubishi Electric Corp 半導体装置
WO1985000468A1 (en) * 1983-07-14 1985-01-31 Advanced Micro Devices, Inc. A semiconductor die having undedicated input/output cells
JPS6027145A (ja) * 1983-07-25 1985-02-12 Hitachi Ltd 半導体集積回路装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPS61111576A (ja) * 1984-10-13 1986-05-29 Fujitsu Ltd 半導体装置
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
JPS6289341A (ja) * 1985-10-15 1987-04-23 Mitsubishi Electric Corp マスタスライス方式大規模半導体集積回路装置の製造方法
JPH0638453B2 (ja) * 1986-05-12 1994-05-18 日本電気株式会社 半導体装置
US4862197A (en) * 1986-08-28 1989-08-29 Hewlett-Packard Co. Process for manufacturing thermal ink jet printhead and integrated circuit (IC) structures produced thereby
JPS63108733A (ja) * 1986-10-24 1988-05-13 Nec Corp 半導体集積回路
JPH0758734B2 (ja) * 1987-02-23 1995-06-21 株式会社東芝 絶縁ゲ−ト型セミカスタム集積回路
US5243208A (en) * 1987-05-27 1993-09-07 Hitachi, Ltd. Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array
EP0650196A2 (en) * 1988-04-22 1995-04-26 Fujitsu Limited Semiconductor integrated circuit device and method of producing the same using master slice approach
JPH01289138A (ja) * 1988-05-16 1989-11-21 Toshiba Corp マスタースライス型半導体集積回路
US5162893A (en) * 1988-05-23 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device with an enlarged internal logic circuit area
JPH01293647A (ja) * 1988-05-23 1989-11-27 Fujitsu Ltd 半導体装置
US5019889A (en) * 1988-06-29 1991-05-28 Hitachi, Ltd. Semiconductor integrated circuit device
US5300796A (en) * 1988-06-29 1994-04-05 Hitachi, Ltd. Semiconductor device having an internal cell array region and a peripheral region surrounding the internal cell array for providing input/output basic cells
EP0360164A3 (en) * 1988-09-20 1990-07-04 National Semiconductor Corporation Standard cell output driver connection system
US4987578A (en) * 1988-10-07 1991-01-22 Advanced Micro Devices, Inc. Mask programmable bus control gate array
JPH07111971B2 (ja) * 1989-10-11 1995-11-29 三菱電機株式会社 集積回路装置の製造方法
US5216280A (en) * 1989-12-02 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having pads at periphery of semiconductor chip
JPH06105709B2 (ja) * 1989-12-02 1994-12-21 東芝マイクロエレクトロニクス株式会社 半導体集積回路装置
US4988636A (en) * 1990-01-29 1991-01-29 International Business Machines Corporation Method of making bit stack compatible input/output circuits
JPH02223220A (ja) * 1990-01-29 1990-09-05 Hitachi Ltd 半導体集積回路装置
US5153507A (en) * 1990-11-16 1992-10-06 Vlsi Technology, Inc. Multi-purpose bond pad test die
JP2707871B2 (ja) * 1991-05-31 1998-02-04 富士ゼロックス株式会社 電子デバイス及びその製造方法
US5134094A (en) * 1991-07-22 1992-07-28 Silicon Power Corporation Single inline packaged solid state relay with high current density capability
US5220197A (en) * 1991-07-22 1993-06-15 Silicon Power Corporation Single inline packaged solid state relay with high current density capability
US6487682B2 (en) 1991-09-18 2002-11-26 Fujitsu Limited Semiconductor integrated circuit
US5341018A (en) * 1991-09-18 1994-08-23 Nec Corporation Semiconductor integrated circuit device having a plurality of input circuits each including differently sized transistors
JPH06140607A (ja) * 1992-10-28 1994-05-20 Mitsubishi Electric Corp 半導体集積回路
US5404041A (en) * 1993-03-31 1995-04-04 Texas Instruments Incorporated Source contact placement for efficient ESD/EOS protection in grounded substrate MOS integrated circuit
US5691218A (en) * 1993-07-01 1997-11-25 Lsi Logic Corporation Method of fabricating a programmable polysilicon gate array base cell structure
US5436578A (en) * 1993-07-14 1995-07-25 Hewlett-Packard Corporation CMOS output pad driver with variable drive currents ESD protection and improved leakage current behavior
US5796129A (en) * 1993-08-03 1998-08-18 Seiko Epson Corp. Master slice type integrated circuit system having block areas optimized based on function
US5552333A (en) * 1994-09-16 1996-09-03 Lsi Logic Corporation Method for designing low profile variable width input/output cells
US5760428A (en) * 1996-01-25 1998-06-02 Lsi Logic Corporation Variable width low profile gate array input/output architecture
US5698873A (en) * 1996-03-08 1997-12-16 Lsi Logic Corporation High density gate array base cell architecture
US5796638A (en) * 1996-06-24 1998-08-18 The Board Of Trustees Of The University Of Illinois Methods, apparatus and computer program products for synthesizing integrated circuits with electrostatic discharge capability and connecting ground rules faults therein
US5767565A (en) * 1996-07-22 1998-06-16 Alliance Semiconductor Corporation Semiconductor devices having cooperative mode option at assembly stage and method thereof
US5969390A (en) * 1997-07-22 1999-10-19 Zilog, Inc. Layout solution for electromagnetic interference reduction
US6114731A (en) * 1998-03-27 2000-09-05 Adaptec, Inc. Low capacitance ESD structure having a source inside a well and the bottom portion of the drain inside a substrate
US6078068A (en) * 1998-07-15 2000-06-20 Adaptec, Inc. Electrostatic discharge protection bus/die edge seal
JP3914649B2 (ja) * 1999-02-10 2007-05-16 株式会社東芝 半導体装置
JP3530450B2 (ja) * 2000-02-18 2004-05-24 Ｎｅｃエレクトロニクス株式会社 マクロ回路の配線方法、マクロ回路配線装置、及びマクロ回路
JP4146290B2 (ja) * 2003-06-06 2008-09-10 株式会社ルネサステクノロジ 半導体装置

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US3771217A (en) * 1971-04-16 1973-11-13 Texas Instruments Inc Integrated circuit arrays utilizing discretionary wiring and method of fabricating same
US3936812A (en) * 1974-12-30 1976-02-03 Ibm Corporation Segmented parallel rail paths for input/output signals
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
US4161662A (en) * 1976-01-22 1979-07-17 Motorola, Inc. Standardized digital logic chip
US4207556A (en) * 1976-12-14 1980-06-10 Nippon Telegraph And Telephone Public Corporation Programmable logic array arrangement
JPS60953B2 (ja) * 1977-12-30 1985-01-11 富士通株式会社 半導体集積回路装置
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置
US4249193A (en) * 1978-05-25 1981-02-03 International Business Machines Corporation LSI Semiconductor device and fabrication thereof
JPS55163859A (en) * 1979-06-07 1980-12-20 Fujitsu Ltd Manufacture of semiconductor device
JPS561545A (en) * 1979-06-15 1981-01-09 Mitsubishi Electric Corp Input/output buffer cell for semiconductor integrated circuit
JPS5631730U (enExample) * 1979-07-19 1981-03-27
JPS5619639A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Semiconductor device
JPS5690548A (en) * 1979-11-20 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device by master slice system
JPS57181152A (en) * 1981-04-30 1982-11-08 Toshiba Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
FR2508255A1 (fr) 1982-12-24
HK54686A (en) 1986-08-01
JPS57211248A (en) 1982-12-25
GB2104284B (en) 1985-06-19
FR2508255B1 (fr) 1987-12-24
KR840000985A (ko) 1984-03-26
IT8221971A0 (it) 1982-06-21
SG20786G (en) 1987-03-27
DE3223276A1 (de) 1983-01-05
GB2104284A (en) 1983-03-02
US4893168A (en) 1990-01-09
MY8600554A (en) 1986-12-31
KR910000155B1 (ko) 1991-01-21
JPH0440866B2 (enExample) 1992-07-06

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950629