IT1114012B - Dispositivi semiconduttori e circuiti integrati - Google Patents

Dispositivi semiconduttori e circuiti integrati

Info

Publication number
IT1114012B
IT1114012B IT22901/79A IT2290179A IT1114012B IT 1114012 B IT1114012 B IT 1114012B IT 22901/79 A IT22901/79 A IT 22901/79A IT 2290179 A IT2290179 A IT 2290179A IT 1114012 B IT1114012 B IT 1114012B
Authority
IT
Italy
Prior art keywords
integrated circuits
semiconductor devices
semiconductor
circuits
integrated
Prior art date
Application number
IT22901/79A
Other languages
English (en)
Other versions
IT7922901A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7922901A0 publication Critical patent/IT7922901A0/it
Application granted granted Critical
Publication of IT1114012B publication Critical patent/IT1114012B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
IT22901/79A 1978-05-23 1979-05-22 Dispositivi semiconduttori e circuiti integrati IT1114012B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/908,792 US4240843A (en) 1978-05-23 1978-05-23 Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing

Publications (2)

Publication Number Publication Date
IT7922901A0 IT7922901A0 (it) 1979-05-22
IT1114012B true IT1114012B (it) 1986-01-27

Family

ID=25426245

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22901/79A IT1114012B (it) 1978-05-23 1979-05-22 Dispositivi semiconduttori e circuiti integrati

Country Status (7)

Country Link
US (1) US4240843A (it)
JP (1) JPS5526693A (it)
DE (1) DE2920763A1 (it)
FR (1) FR2426978A1 (it)
GB (1) GB2021316B (it)
IT (1) IT1114012B (it)
NL (1) NL7904036A (it)

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US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
JPS56135969A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Manufacture of semiconductor device
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE34658E (en) * 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US4339285A (en) * 1980-07-28 1982-07-13 Rca Corporation Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
US4319954A (en) * 1981-02-27 1982-03-16 Rca Corporation Method of forming polycrystalline silicon lines and vias on a silicon substrate
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4535220A (en) * 1981-11-10 1985-08-13 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Integrated circuits
JPS59108313A (ja) * 1982-12-13 1984-06-22 Mitsubishi Electric Corp 半導体単結晶層の製造方法
US4590589A (en) * 1982-12-21 1986-05-20 Zoran Corporation Electrically programmable read only memory
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
GB2133618B (en) * 1983-01-05 1986-09-10 Gen Electric Co Plc Fabricating semiconductor circuits
US4593306A (en) * 1983-02-24 1986-06-03 Battelle Development Corporation Information storage medium and method of recording and retrieving information thereon
GB8410252D0 (en) * 1984-04-19 1984-05-31 Plessey Co Plc Shallow source/drain structures
US4559086A (en) * 1984-07-02 1985-12-17 Eastman Kodak Company Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions
JP2724702B2 (ja) * 1985-06-21 1998-03-09 日本テキサス・インスツルメンツ 株式会社 電荷結合型半導体装置の製造方法
JPS61294866A (ja) * 1985-06-21 1986-12-25 Nippon Texas Instr Kk 電荷結合型半導体装置
US4835118A (en) * 1986-09-08 1989-05-30 Inmos Corporation Non-destructive energy beam activated conductive links
JP2573201B2 (ja) * 1987-02-26 1997-01-22 株式会社東芝 半導体素子の拡散層形成方法
DE3816256A1 (de) * 1988-05-11 1989-11-23 Siemens Ag Verfahren zum herstellen einer aus einem ersten halbleitermaterial bestehenden einkristallinen schicht auf einem substrat aus einem andersartigen zweiten halbleitermaterial und verwendung der anordnung zur herstellung von optoelektronischen integrierten schaltungen
DE3903121A1 (de) * 1989-02-02 1990-08-09 Licentia Gmbh Amorphisierungsverfahren zur strukturierung eines halbleiterkoerpers
US5027183A (en) * 1990-04-20 1991-06-25 International Business Machines Isolated semiconductor macro circuit
US20020198230A1 (en) * 1993-09-24 2002-12-26 Howard M. Kingston Method and apparatus for microwave assisted chemical reactions
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US6372607B1 (en) * 1999-06-30 2002-04-16 Intel Corporation Photodiode structure
US7285473B2 (en) * 2005-01-07 2007-10-23 International Business Machines Corporation Method for fabricating low-defect-density changed orientation Si
US7060585B1 (en) * 2005-02-16 2006-06-13 International Business Machines Corporation Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization
US20110151270A1 (en) * 2009-12-18 2011-06-23 Todd Jay Rockstroh Methods of laser assisted plasma coating at atmospheric pressure and superalloy substrates comprising coatings made using the same
US20110146576A1 (en) * 2009-12-18 2011-06-23 Todd Jay Rockstroh Systems for applying a thermal barrier coating to a superalloy substrate
US20110169520A1 (en) * 2010-01-14 2011-07-14 Mks Instruments, Inc. Apparatus for measuring minority carrier lifetime and method for using the same

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FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
JPS5130437B1 (it) * 1970-03-25 1976-09-01
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US3763532A (en) * 1972-06-05 1973-10-09 Dayco Corp Drafting roller construction
US3921199A (en) * 1973-07-31 1975-11-18 Texas Instruments Inc Junction breakdown voltage by means of ion implanted compensation guard ring
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
JPS5733709B2 (it) * 1974-01-23 1982-07-19
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US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
FR2341198A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes
US4133704A (en) * 1977-01-17 1979-01-09 General Motors Corporation Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon
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US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors

Also Published As

Publication number Publication date
IT7922901A0 (it) 1979-05-22
NL7904036A (nl) 1979-11-27
FR2426978B1 (it) 1984-06-15
JPS5526693A (en) 1980-02-26
FR2426978A1 (fr) 1979-12-21
GB2021316B (en) 1982-06-16
US4240843A (en) 1980-12-23
GB2021316A (en) 1979-11-28
DE2920763A1 (de) 1979-11-29

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