NL7904036A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL7904036A NL7904036A NL7904036A NL7904036A NL7904036A NL 7904036 A NL7904036 A NL 7904036A NL 7904036 A NL7904036 A NL 7904036A NL 7904036 A NL7904036 A NL 7904036A NL 7904036 A NL7904036 A NL 7904036A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- guide device
- guide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/055—Fuse
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/092—Laser beam processing-diodes or transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/908,792 US4240843A (en) | 1978-05-23 | 1978-05-23 | Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7904036A true NL7904036A (nl) | 1979-11-27 |
Family
ID=25426245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7904036A NL7904036A (nl) | 1978-05-23 | 1979-05-22 | Halfgeleiderinrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4240843A (nl) |
JP (1) | JPS5526693A (nl) |
DE (1) | DE2920763A1 (nl) |
FR (1) | FR2426978A1 (nl) |
GB (1) | GB2021316B (nl) |
IT (1) | IT1114012B (nl) |
NL (1) | NL7904036A (nl) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3067750D1 (en) * | 1979-07-23 | 1984-06-14 | Tokyo Shibaura Electric Co | Charge storage type semiconductor device |
JPS5638815A (en) * | 1979-09-07 | 1981-04-14 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US4303455A (en) * | 1980-03-14 | 1981-12-01 | Rockwell International Corporation | Low temperature microwave annealing of semiconductor devices |
JPS56135969A (en) * | 1980-03-27 | 1981-10-23 | Fujitsu Ltd | Manufacture of semiconductor device |
US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
US4322253A (en) * | 1980-04-30 | 1982-03-30 | Rca Corporation | Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment |
USRE34658E (en) * | 1980-06-30 | 1994-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device of non-single crystal-structure |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4803528A (en) * | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
US4319954A (en) * | 1981-02-27 | 1982-03-16 | Rca Corporation | Method of forming polycrystalline silicon lines and vias on a silicon substrate |
JPS5856409A (ja) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | 半導体装置の製造方法 |
US4535220A (en) * | 1981-11-10 | 1985-08-13 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Integrated circuits |
JPS59108313A (ja) * | 1982-12-13 | 1984-06-22 | Mitsubishi Electric Corp | 半導体単結晶層の製造方法 |
US4590589A (en) * | 1982-12-21 | 1986-05-20 | Zoran Corporation | Electrically programmable read only memory |
US4531055A (en) * | 1983-01-05 | 1985-07-23 | The United States Of America As Represented By The Secretary Of The Air Force | Self-guarding Schottky barrier infrared detector array |
GB2133618B (en) * | 1983-01-05 | 1986-09-10 | Gen Electric Co Plc | Fabricating semiconductor circuits |
US4593306A (en) * | 1983-02-24 | 1986-06-03 | Battelle Development Corporation | Information storage medium and method of recording and retrieving information thereon |
GB8410252D0 (en) * | 1984-04-19 | 1984-05-31 | Plessey Co Plc | Shallow source/drain structures |
US4559086A (en) * | 1984-07-02 | 1985-12-17 | Eastman Kodak Company | Backside gettering of silicon wafers utilizing selectively annealed single crystal silicon portions disposed between and extending into polysilicon portions |
JPS61294866A (ja) * | 1985-06-21 | 1986-12-25 | Nippon Texas Instr Kk | 電荷結合型半導体装置 |
JP2724702B2 (ja) * | 1985-06-21 | 1998-03-09 | 日本テキサス・インスツルメンツ 株式会社 | 電荷結合型半導体装置の製造方法 |
US4835118A (en) * | 1986-09-08 | 1989-05-30 | Inmos Corporation | Non-destructive energy beam activated conductive links |
JP2573201B2 (ja) * | 1987-02-26 | 1997-01-22 | 株式会社東芝 | 半導体素子の拡散層形成方法 |
DE3816256A1 (de) * | 1988-05-11 | 1989-11-23 | Siemens Ag | Verfahren zum herstellen einer aus einem ersten halbleitermaterial bestehenden einkristallinen schicht auf einem substrat aus einem andersartigen zweiten halbleitermaterial und verwendung der anordnung zur herstellung von optoelektronischen integrierten schaltungen |
DE3903121A1 (de) * | 1989-02-02 | 1990-08-09 | Licentia Gmbh | Amorphisierungsverfahren zur strukturierung eines halbleiterkoerpers |
US5027183A (en) * | 1990-04-20 | 1991-06-25 | International Business Machines | Isolated semiconductor macro circuit |
US20020198230A1 (en) * | 1993-09-24 | 2002-12-26 | Howard M. Kingston | Method and apparatus for microwave assisted chemical reactions |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
US6372607B1 (en) * | 1999-06-30 | 2002-04-16 | Intel Corporation | Photodiode structure |
US7285473B2 (en) * | 2005-01-07 | 2007-10-23 | International Business Machines Corporation | Method for fabricating low-defect-density changed orientation Si |
US7060585B1 (en) * | 2005-02-16 | 2006-06-13 | International Business Machines Corporation | Hybrid orientation substrates by in-place bonding and amorphization/templated recrystallization |
US20110151270A1 (en) * | 2009-12-18 | 2011-06-23 | Todd Jay Rockstroh | Methods of laser assisted plasma coating at atmospheric pressure and superalloy substrates comprising coatings made using the same |
US20110146576A1 (en) * | 2009-12-18 | 2011-06-23 | Todd Jay Rockstroh | Systems for applying a thermal barrier coating to a superalloy substrate |
US20110169520A1 (en) * | 2010-01-14 | 2011-07-14 | Mks Instruments, Inc. | Apparatus for measuring minority carrier lifetime and method for using the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1527898A (fr) * | 1967-03-16 | 1968-06-07 | Radiotechnique Coprim Rtc | Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication |
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
GB1269359A (en) * | 1968-08-22 | 1972-04-06 | Atomic Energy Authority Uk | Improvements in or relating to semiconductors and methods of doping semiconductors |
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
JPS5130437B1 (nl) * | 1970-03-25 | 1976-09-01 | ||
JPS4837232A (nl) * | 1971-09-15 | 1973-06-01 | ||
US3763532A (en) * | 1972-06-05 | 1973-10-09 | Dayco Corp | Drafting roller construction |
US3921199A (en) * | 1973-07-31 | 1975-11-18 | Texas Instruments Inc | Junction breakdown voltage by means of ion implanted compensation guard ring |
US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
JPS5733709B2 (nl) * | 1974-01-23 | 1982-07-19 | ||
JPS544826B2 (nl) * | 1974-06-11 | 1979-03-10 | ||
JPS5154772A (ja) * | 1974-11-08 | 1976-05-14 | Nippon Electric Co | Handotaisochinoseizohoho |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
FR2341198A1 (fr) * | 1976-02-13 | 1977-09-09 | Thomson Csf | Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes |
US4133704A (en) * | 1977-01-17 | 1979-01-09 | General Motors Corporation | Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon |
JPS5424574A (en) * | 1977-07-26 | 1979-02-23 | Fujitsu Ltd | Manufacture for semiconductor device |
US4154625A (en) * | 1977-11-16 | 1979-05-15 | Bell Telephone Laboratories, Incorporated | Annealing of uncapped compound semiconductor materials by pulsed energy deposition |
US4155779A (en) * | 1978-08-21 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Control techniques for annealing semiconductors |
-
1978
- 1978-05-23 US US05/908,792 patent/US4240843A/en not_active Expired - Lifetime
-
1979
- 1979-05-16 GB GB7916932A patent/GB2021316B/en not_active Expired
- 1979-05-22 DE DE19792920763 patent/DE2920763A1/de not_active Ceased
- 1979-05-22 NL NL7904036A patent/NL7904036A/nl not_active Application Discontinuation
- 1979-05-22 FR FR7912966A patent/FR2426978A1/fr active Granted
- 1979-05-22 IT IT22901/79A patent/IT1114012B/it active
- 1979-05-23 JP JP6275879A patent/JPS5526693A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2021316A (en) | 1979-11-28 |
IT7922901A0 (it) | 1979-05-22 |
GB2021316B (en) | 1982-06-16 |
DE2920763A1 (de) | 1979-11-29 |
FR2426978B1 (nl) | 1984-06-15 |
US4240843A (en) | 1980-12-23 |
FR2426978A1 (fr) | 1979-12-21 |
JPS5526693A (en) | 1980-02-26 |
IT1114012B (it) | 1986-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |