NL7900274A - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL7900274A NL7900274A NL7900274A NL7900274A NL7900274A NL 7900274 A NL7900274 A NL 7900274A NL 7900274 A NL7900274 A NL 7900274A NL 7900274 A NL7900274 A NL 7900274A NL 7900274 A NL7900274 A NL 7900274A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- guide device
- guide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
- H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/869,369 US4160261A (en) | 1978-01-13 | 1978-01-13 | Mis heterojunction structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7900274A true NL7900274A (nl) | 1979-07-17 |
Family
ID=25353428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7900274A NL7900274A (nl) | 1978-01-13 | 1979-01-12 | Halfgeleiderinrichting. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4160261A (nl) |
| JP (1) | JPS54129886A (nl) |
| BE (1) | BE873428A (nl) |
| CA (1) | CA1125922A (nl) |
| DE (1) | DE2901094A1 (nl) |
| FR (1) | FR2414796A1 (nl) |
| GB (1) | GB2013028B (nl) |
| IT (1) | IT1111954B (nl) |
| NL (1) | NL7900274A (nl) |
| SE (1) | SE7900083L (nl) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4291327A (en) * | 1978-08-28 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | MOS Devices |
| US4297783A (en) * | 1979-01-30 | 1981-11-03 | Bell Telephone Laboratories, Incorporated | Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer |
| US4231050A (en) * | 1979-01-30 | 1980-10-28 | Bell Telephone Laboratories, Incorporated | Reduction of surface recombination current in GaAs devices |
| FR2465317A2 (fr) * | 1979-03-28 | 1981-03-20 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| FR2469002A1 (fr) * | 1979-10-26 | 1981-05-08 | Thomson Csf | Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur |
| FR2489045A1 (fr) * | 1980-08-20 | 1982-02-26 | Thomson Csf | Transistor a effet de champ gaas a memoire non volatile |
| FR2492167A1 (fr) * | 1980-10-14 | 1982-04-16 | Thomson Csf | Transistor a effet de champ a frequence de coupure elevee |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| FR2497603A1 (fr) * | 1981-01-06 | 1982-07-09 | Thomson Csf | Transistor a faible temps de commutation, de type normalement bloquant |
| US4605912A (en) * | 1981-12-03 | 1986-08-12 | General Electric Company | Continuously variable phase shifting element comprised of interdigitated electrode MESFET |
| US4468851A (en) * | 1981-12-14 | 1984-09-04 | The United States Of America As Represented By The Secretary Of The Navy | Process for making a heterojunction source-drain insulated gate field-effect transistors utilizing diffusion to form the lattice |
| US4482906A (en) * | 1982-06-30 | 1984-11-13 | International Business Machines Corporation | Gallium aluminum arsenide integrated circuit structure using germanium |
| US4532695A (en) * | 1982-07-02 | 1985-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making self-aligned IGFET |
| US4672423A (en) * | 1982-09-30 | 1987-06-09 | International Business Machines Corporation | Voltage controlled resonant transmission semiconductor device |
| GB2133928B (en) * | 1982-12-04 | 1986-07-30 | Plessey Co Plc | Coatings for semiconductor devices |
| JPS59127839A (ja) * | 1983-01-11 | 1984-07-23 | Nec Corp | ３―５族化合物半導体表面の不活性化法 |
| US4578126A (en) * | 1983-06-22 | 1986-03-25 | Trw Inc. | Liquid phase epitaxial growth process |
| US4568958A (en) * | 1984-01-03 | 1986-02-04 | General Electric Company | Inversion-mode insulated-gate gallium arsenide field-effect transistors |
| GB2163002B (en) * | 1984-08-08 | 1989-01-05 | Japan Res Dev Corp | Tunnel injection static induction transistor and its integrated circuit |
| JPS61100968A (ja) * | 1984-10-22 | 1986-05-19 | Seiko Epson Corp | 電界効果型トランジスタ |
| JPS63144580A (ja) * | 1986-12-09 | 1988-06-16 | Nec Corp | 電界効果トランジスタ |
| KR880010509A (ko) * | 1987-02-11 | 1988-10-10 | 오레그 이. 앨버 | 전계효과 트랜지스터 |
| US5196907A (en) * | 1990-08-20 | 1993-03-23 | Siemens Aktiengesellschaft | Metal insulator semiconductor field effect transistor |
| WO1992015113A1 (en) * | 1991-02-19 | 1992-09-03 | Fujitsu Limited | Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof |
| JP2616287B2 (ja) * | 1991-07-08 | 1997-06-04 | 株式会社村田製作所 | 半導体装置 |
| GB9116341D0 (en) * | 1991-07-29 | 1991-09-11 | Hitachi Europ Ltd | Lt-gaas semiconductor device |
| EP0549373B1 (en) * | 1991-12-25 | 1995-05-17 | Nec Corporation | Tunnel transistor and method of manufacturing same |
| TW319916B (nl) * | 1995-06-05 | 1997-11-11 | Hewlett Packard Co |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4062035A (en) * | 1975-02-05 | 1977-12-06 | Siemens Aktiengesellschaft | Luminescent diode |
-
1978
- 1978-01-13 US US05/869,369 patent/US4160261A/en not_active Expired - Lifetime
-
1979
- 1979-01-04 SE SE7900083A patent/SE7900083L/xx unknown
- 1979-01-11 CA CA319,450A patent/CA1125922A/en not_active Expired
- 1979-01-12 GB GB791321A patent/GB2013028B/en not_active Expired
- 1979-01-12 BE BE192854A patent/BE873428A/xx not_active IP Right Cessation
- 1979-01-12 FR FR7900796A patent/FR2414796A1/fr active Pending
- 1979-01-12 DE DE19792901094 patent/DE2901094A1/de not_active Withdrawn
- 1979-01-12 NL NL7900274A patent/NL7900274A/nl not_active Application Discontinuation
- 1979-01-12 IT IT19260/79A patent/IT1111954B/it active
- 1979-01-13 JP JP179579A patent/JPS54129886A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2013028B (en) | 1982-03-03 |
| JPS54129886A (en) | 1979-10-08 |
| GB2013028A (en) | 1979-08-01 |
| FR2414796A1 (fr) | 1979-08-10 |
| DE2901094A1 (de) | 1979-07-19 |
| US4160261A (en) | 1979-07-03 |
| CA1125922A (en) | 1982-06-15 |
| SE7900083L (sv) | 1979-07-14 |
| BE873428A (fr) | 1979-05-02 |
| IT1111954B (it) | 1986-01-13 |
| IT7919260A0 (it) | 1979-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |