FR2494021B1 - Dispositif a circuits integres a semiconducteurs - Google Patents

Dispositif a circuits integres a semiconducteurs

Info

Publication number
FR2494021B1
FR2494021B1 FR8120400A FR8120400A FR2494021B1 FR 2494021 B1 FR2494021 B1 FR 2494021B1 FR 8120400 A FR8120400 A FR 8120400A FR 8120400 A FR8120400 A FR 8120400A FR 2494021 B1 FR2494021 B1 FR 2494021B1
Authority
FR
France
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8120400A
Other languages
English (en)
Other versions
FR2494021A1 (fr
Inventor
Yoshiaki Onishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2494021A1 publication Critical patent/FR2494021A1/fr
Application granted granted Critical
Publication of FR2494021B1 publication Critical patent/FR2494021B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0811—MIS diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
FR8120400A 1980-11-07 1981-10-30 Dispositif a circuits integres a semiconducteurs Expired FR2494021B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155946A JPS5780828A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
FR2494021A1 FR2494021A1 (fr) 1982-05-14
FR2494021B1 true FR2494021B1 (fr) 1986-09-12

Family

ID=15616973

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8120400A Expired FR2494021B1 (fr) 1980-11-07 1981-10-30 Dispositif a circuits integres a semiconducteurs

Country Status (9)

Country Link
US (1) US4477736A (fr)
JP (1) JPS5780828A (fr)
DE (1) DE3144001A1 (fr)
FR (1) FR2494021B1 (fr)
GB (1) GB2087183B (fr)
HK (1) HK89684A (fr)
IT (1) IT1140272B (fr)
MY (1) MY8500849A (fr)
SG (1) SG62484G (fr)

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US5687109A (en) 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US4937476A (en) * 1988-06-16 1990-06-26 Intel Corporation Self-biased, high-gain differential amplifier with feedback
EP0348895B1 (fr) * 1988-06-27 1995-05-17 Nec Corporation Dispositif de mémoire semi-conductrice avec une source de tension à structure à faible bruit
US5079441A (en) * 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
JPH07114259B2 (ja) * 1989-10-19 1995-12-06 株式会社東芝 半導体記憶装置
US5256590A (en) * 1989-11-24 1993-10-26 Mitsubishi Denki Kabushiki Kaisha Method of making a shielded semiconductor device
JPH03165058A (ja) * 1989-11-24 1991-07-17 Mitsubishi Electric Corp 半導体装置
JP3124781B2 (ja) * 1990-03-30 2001-01-15 富士通株式会社 半導体集積回路装置
JP2621612B2 (ja) * 1990-08-11 1997-06-18 日本電気株式会社 半導体集積回路
US5041741A (en) * 1990-09-14 1991-08-20 Ncr Corporation Transient immune input buffer
JPH0562461A (ja) * 1991-04-09 1993-03-12 Mitsubishi Electric Corp 半導体記憶装置
KR930001392A (ko) * 1991-06-19 1993-01-16 김광호 반도체 메모리 장치의 전원 접지선 배선방법
EP0574275B1 (fr) * 1992-06-12 1998-04-15 Matsushita Electronics Corporation Dispositif à semiconducteur ayant un condensateur
JP3217498B2 (ja) * 1992-10-29 2001-10-09 富士通株式会社 半導体集積回路装置
EP0596637A1 (fr) * 1992-11-02 1994-05-11 STMicroelectronics, Inc. Circuit tampon d'entrée
JP2684976B2 (ja) * 1993-11-24 1997-12-03 日本電気株式会社 半導体装置
DE69433808T2 (de) * 1993-11-30 2005-06-09 Siliconix Inc., Santa Clara Vielfach-Spannungsversorgung und Verfahren zur Auswahl einer Spannungsquelle aus einer Vielzahl von Spannungsquellen
US5536977A (en) * 1993-11-30 1996-07-16 Siliconix Incorporated Bidirectional current blocking MOSFET for battery disconnect switching
US5568085A (en) * 1994-05-16 1996-10-22 Waferscale Integration Inc. Unit for stabilizing voltage on a capacitive node
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US6114756A (en) * 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
US6414391B1 (en) 1998-06-30 2002-07-02 Micron Technology, Inc. Module assembly for stacked BGA packages with a common bus bar in the assembly
JP3255134B2 (ja) * 1999-01-22 2002-02-12 日本電気株式会社 半導体装置の製造方法
US6597619B2 (en) * 2001-01-12 2003-07-22 Micron Technology, Inc. Actively driven VREF for input buffer noise immunity
US6920316B2 (en) * 2001-09-04 2005-07-19 Freescale Semiconductor, Inc. High performance integrated circuit regulator with substrate transient suppression
US6943596B2 (en) * 2002-03-12 2005-09-13 Broadcom Corporation Power-on reset circuit for use in low power supply voltage applications
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US6755700B2 (en) * 2002-11-12 2004-06-29 Modevation Enterprises Inc. Reset speed control for watercraft
US7227411B2 (en) * 2003-06-17 2007-06-05 Broadcom Corporation Apparatus for a differential self-biasing CMOS amplifier
KR100539252B1 (ko) * 2004-03-08 2005-12-27 삼성전자주식회사 데이터 버스 및 커맨드/어드레스 버스를 통해 전송되는신호의 충실도를 향상시킬 수 있는 메모리 모듈 및 이를포함하는 메모리 시스템
US6930550B1 (en) 2004-04-26 2005-08-16 Pericom Semiconductor Corp. Self-biasing differential buffer with transmission-gate bias generator
KR100728571B1 (ko) * 2006-02-09 2007-06-15 주식회사 하이닉스반도체 반도체 메모리의 데이터 센싱장치
US7664907B1 (en) 2006-11-02 2010-02-16 Nvidia Corporation Page stream sorter with dynamic binning
US7664905B2 (en) * 2006-11-03 2010-02-16 Nvidia Corporation Page stream sorter for poor locality access patterns
KR101519039B1 (ko) * 2008-11-27 2015-05-11 삼성전자주식회사 입출력 센스 앰프, 이를 포함하는 반도체 메모리 장치, 및 반도체 메모리 장치를 포함하는 메모리 시스템
KR20140071757A (ko) * 2012-12-04 2014-06-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 반도체 메모리의 동작을 위한 기준 전압 생성 방법
WO2016158429A1 (fr) * 2015-03-31 2016-10-06 ソニーセミコンダクタソリューションズ株式会社 Élément de commutation et dispositif de stockage
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Also Published As

Publication number Publication date
MY8500849A (en) 1985-12-31
IT1140272B (it) 1986-09-24
US4477736A (en) 1984-10-16
GB2087183A (en) 1982-05-19
DE3144001A1 (de) 1982-08-26
SG62484G (en) 1985-03-15
JPS5780828A (en) 1982-05-20
GB2087183B (en) 1984-04-26
IT8124892A0 (it) 1981-11-05
FR2494021A1 (fr) 1982-05-14
HK89684A (en) 1984-11-23

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Legal Events

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ST Notification of lapse