IT1167456B - Dispositivo a circuito integrato a semiconduttori - Google Patents

Dispositivo a circuito integrato a semiconduttori

Info

Publication number
IT1167456B
IT1167456B IT22142/81A IT2214281A IT1167456B IT 1167456 B IT1167456 B IT 1167456B IT 22142/81 A IT22142/81 A IT 22142/81A IT 2214281 A IT2214281 A IT 2214281A IT 1167456 B IT1167456 B IT 1167456B
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Application number
IT22142/81A
Other languages
English (en)
Other versions
IT8122142A1 (it
IT8122142A0 (it
Inventor
James Peter Ballantyne
Paul Egon Fleischer
Kenneth Robert Laker
Aristides Antony Yiannoulos
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8122142A0 publication Critical patent/IT8122142A0/it
Publication of IT8122142A1 publication Critical patent/IT8122142A1/it
Application granted granted Critical
Publication of IT1167456B publication Critical patent/IT1167456B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0123—Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794—Combinations of capacitors and resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H1/02—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network of RC networks, e.g. integrated networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H11/12—Frequency selective two-port networks using amplifiers with feedback
    • H03H11/1204—Distributed RC filters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
IT22142/81A 1980-06-06 1981-06-04 Dispositivo a circuito integrato a semiconduttori IT1167456B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/157,452 US4399417A (en) 1980-06-06 1980-06-06 Integrated CRC filter circuit

Publications (3)

Publication Number Publication Date
IT8122142A0 IT8122142A0 (it) 1981-06-04
IT8122142A1 IT8122142A1 (it) 1982-12-04
IT1167456B true IT1167456B (it) 1987-05-13

Family

ID=22563779

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22142/81A IT1167456B (it) 1980-06-06 1981-06-04 Dispositivo a circuito integrato a semiconduttori

Country Status (7)

Country Link
US (1) US4399417A (it)
CA (1) CA1154544A (it)
DE (1) DE3122229A1 (it)
FR (1) FR2484142A1 (it)
GB (1) GB2077496B (it)
IT (1) IT1167456B (it)
NL (1) NL8102752A (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875922A (ja) * 1981-10-30 1983-05-07 Toshiba Corp 半導体スイツチ回路
GB2136235B (en) * 1983-02-22 1986-07-09 Philips Electronic Associated Rc active filter device
CA1228175A (en) * 1984-06-20 1987-10-13 Yusuf A. Haque Integrated circuit filter with reduced die area
FR2567325B1 (fr) * 1984-07-03 1986-11-14 Thomson Csf Element a capacite variable, commandable par une tension continue
NO861166L (no) * 1985-04-24 1986-10-27 Siemens Ag Celle oppbygget i cmos-teknikk.
US4853759A (en) * 1986-09-29 1989-08-01 American Microsystems, Inc. Integrated circuit filter with reduced die area
DE3714672A1 (de) * 1987-05-02 1988-11-17 Telefunken Electronic Gmbh Rc-leitung
NL8701357A (nl) * 1987-06-11 1989-01-02 Philips Nv Halfgeleiderinrichting bevattende een condensator en een begraven passiveringslaag.
WO1990015486A1 (en) * 1989-06-05 1990-12-13 Motorola, Inc. Receiver with improved intermodulation performance
GB9416900D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd A variable capacitance semiconductor diode
US5923077A (en) * 1998-02-11 1999-07-13 Bourns, Inc. Passive component integrated circuit chip
US7436678B2 (en) * 2004-10-18 2008-10-14 E.I. Du Pont De Nemours And Company Capacitive/resistive devices and printed wiring boards incorporating such devices and methods of making thereof
US7382627B2 (en) * 2004-10-18 2008-06-03 E.I. Du Pont De Nemours And Company Capacitive/resistive devices, organic dielectric laminates and printed wiring boards incorporating such devices, and methods of making thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3296462A (en) * 1965-07-15 1967-01-03 Fairchild Camera Instr Co Surface field-effect device having a tunable high-pass filter property
FR1530106A (fr) * 1966-08-12 1968-06-21 Ibm Dispositifs semi-conducteurs perfectionnés et procédés de fabrication appropriés
US3953875A (en) * 1974-01-02 1976-04-27 Motorola, Inc. Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4092619A (en) * 1976-12-27 1978-05-30 Intel Corporation Mos voltage controlled lowpass filter
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material

Also Published As

Publication number Publication date
NL8102752A (nl) 1982-01-04
GB2077496B (en) 1984-05-02
FR2484142A1 (fr) 1981-12-11
FR2484142B1 (it) 1984-01-13
DE3122229A1 (de) 1982-02-04
CA1154544A (en) 1983-09-27
GB2077496A (en) 1981-12-16
IT8122142A1 (it) 1982-12-04
US4399417A (en) 1983-08-16
IT8122142A0 (it) 1981-06-04

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