IT8322558A0 - Dispositivo a circuito integrato a semiconduttore e procedimento per la sua fabbricazione. - Google Patents
Dispositivo a circuito integrato a semiconduttore e procedimento per la sua fabbricazione.Info
- Publication number
- IT8322558A0 IT8322558A0 IT8322558A IT2255883A IT8322558A0 IT 8322558 A0 IT8322558 A0 IT 8322558A0 IT 8322558 A IT8322558 A IT 8322558A IT 2255883 A IT2255883 A IT 2255883A IT 8322558 A0 IT8322558 A0 IT 8322558A0
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- integrated circuit
- semiconductor integrated
- circuit device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57139932A JPS5931052A (ja) | 1982-08-13 | 1982-08-13 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8322558A0 true IT8322558A0 (it) | 1983-08-12 |
IT1163907B IT1163907B (it) | 1987-04-08 |
Family
ID=15257022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22558/83A IT1163907B (it) | 1982-08-13 | 1983-08-12 | Dispositivo a circuito integrato a semiconduttore e procedimento per la sua fabbricazione |
Country Status (10)
Country | Link |
---|---|
US (1) | US4662057A (it) |
JP (1) | JPS5931052A (it) |
KR (1) | KR910006672B1 (it) |
DE (1) | DE3329224C2 (it) |
FR (1) | FR2531812B1 (it) |
GB (1) | GB2126782B (it) |
HK (1) | HK69587A (it) |
IT (1) | IT1163907B (it) |
MY (1) | MY8700647A (it) |
SG (1) | SG41087G (it) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8507624D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Semiconductor devices |
US4999761A (en) * | 1985-10-01 | 1991-03-12 | Maxim Integrated Products | Integrated dual charge pump power supply and RS-232 transmitter/receiver |
JPH0628296B2 (ja) * | 1985-10-17 | 1994-04-13 | 日本電気株式会社 | 半導体装置の製造方法 |
US4735911A (en) * | 1985-12-17 | 1988-04-05 | Siemens Aktiengesellschaft | Process for the simultaneous production of bipolar and complementary MOS transistors on a common silicon substrate |
US4737472A (en) * | 1985-12-17 | 1988-04-12 | Siemens Aktiengesellschaft | Process for the simultaneous production of self-aligned bipolar transistors and complementary MOS transistors on a common silicon substrate |
DE3680520D1 (de) * | 1986-03-22 | 1991-08-29 | Itt Ind Gmbh Deutsche | Verfahren zum herstellen einer monolithisch integrierten schaltung mit mindestens einem bipolaren planartransistor. |
JPS62239563A (ja) * | 1986-04-11 | 1987-10-20 | Nec Corp | 半導体装置の製造方法 |
JP2635961B2 (ja) * | 1986-09-26 | 1997-07-30 | 株式会社日立製作所 | 半導体装置の製造方法 |
GB8726367D0 (en) * | 1987-11-11 | 1987-12-16 | Lsi Logic Ltd | Cmos devices |
GB2243717B (en) * | 1990-05-01 | 1994-06-15 | Stc Plc | Bipolar transistor device |
KR100382538B1 (ko) * | 1996-12-20 | 2003-07-18 | 주식회사 하이닉스반도체 | 씨모스소자의 재조방법 |
DE19821726C1 (de) * | 1998-05-14 | 1999-09-09 | Texas Instruments Deutschland | Ingegrierte CMOS-Schaltung für die Verwendung bei hohen Frequenzen |
JPH11330468A (ja) * | 1998-05-20 | 1999-11-30 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
SE515831C2 (sv) * | 1999-02-15 | 2001-10-15 | Ericsson Telefon Ab L M | Halvledaranordning med induktor och förfarande vid framställning av en sådan halvledaranordning |
KR100350648B1 (ko) * | 2000-01-17 | 2002-08-28 | 페어차일드코리아반도체 주식회사 | 모스 트랜지스터 및 그 제조 방법 |
JP5684450B2 (ja) * | 2008-08-20 | 2015-03-11 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL170902C (nl) * | 1970-07-10 | 1983-01-03 | Philips Nv | Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. |
US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
US3999213A (en) * | 1972-04-14 | 1976-12-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
JPS4913909A (it) * | 1972-05-18 | 1974-02-06 | ||
US3898107A (en) * | 1973-12-03 | 1975-08-05 | Rca Corp | Method of making a junction-isolated semiconductor integrated circuit device |
US3955269A (en) * | 1975-06-19 | 1976-05-11 | International Business Machines Corporation | Fabricating high performance integrated bipolar and complementary field effect transistors |
JPS5586151A (en) * | 1978-12-23 | 1980-06-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit |
US4325180A (en) * | 1979-02-15 | 1982-04-20 | Texas Instruments Incorporated | Process for monolithic integration of logic, control, and high voltage interface circuitry |
JPS567462A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS567463A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS5615068A (en) * | 1979-07-18 | 1981-02-13 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS5676560A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor device |
US4346512A (en) * | 1980-05-05 | 1982-08-31 | Raytheon Company | Integrated circuit manufacturing method |
JPS5775453A (en) * | 1980-10-29 | 1982-05-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
US4445268A (en) * | 1981-02-14 | 1984-05-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor integrated circuit BI-MOS device |
JPS57147267A (en) * | 1981-03-05 | 1982-09-11 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit device |
US4535531A (en) * | 1982-03-22 | 1985-08-20 | International Business Machines Corporation | Method and resulting structure for selective multiple base width transistor structures |
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US4536945A (en) * | 1983-11-02 | 1985-08-27 | National Semiconductor Corporation | Process for producing CMOS structures with Schottky bipolar transistors |
-
1982
- 1982-08-13 JP JP57139932A patent/JPS5931052A/ja active Granted
-
1983
- 1983-08-08 KR KR1019830003703A patent/KR910006672B1/ko not_active IP Right Cessation
- 1983-08-11 GB GB08321642A patent/GB2126782B/en not_active Expired
- 1983-08-12 FR FR8313245A patent/FR2531812B1/fr not_active Expired
- 1983-08-12 DE DE3329224A patent/DE3329224C2/de not_active Expired - Fee Related
- 1983-08-12 IT IT22558/83A patent/IT1163907B/it active
-
1985
- 1985-07-26 US US06/759,441 patent/US4662057A/en not_active Expired - Fee Related
-
1987
- 1987-05-06 SG SG410/87A patent/SG41087G/en unknown
- 1987-09-24 HK HK695/87A patent/HK69587A/xx not_active IP Right Cessation
- 1987-12-30 MY MY647/87A patent/MY8700647A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE3329224A1 (de) | 1984-03-15 |
GB2126782A (en) | 1984-03-28 |
GB2126782B (en) | 1986-06-25 |
FR2531812B1 (fr) | 1986-01-24 |
MY8700647A (en) | 1987-12-31 |
GB8321642D0 (en) | 1983-09-14 |
JPH0410226B2 (it) | 1992-02-24 |
JPS5931052A (ja) | 1984-02-18 |
HK69587A (en) | 1987-10-02 |
SG41087G (en) | 1987-07-17 |
IT1163907B (it) | 1987-04-08 |
KR910006672B1 (ko) | 1991-08-30 |
FR2531812A1 (fr) | 1984-02-17 |
DE3329224C2 (de) | 1993-12-02 |
US4662057A (en) | 1987-05-05 |
KR840005927A (ko) | 1984-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970826 |