IT8125073A0 - Dispositivi a circuito integrato a semiconduttori e procedimento per la sua fabbricazione. - Google Patents
Dispositivi a circuito integrato a semiconduttori e procedimento per la sua fabbricazione.Info
- Publication number
- IT8125073A0 IT8125073A0 IT8125073A IT2507381A IT8125073A0 IT 8125073 A0 IT8125073 A0 IT 8125073A0 IT 8125073 A IT8125073 A IT 8125073A IT 2507381 A IT2507381 A IT 2507381A IT 8125073 A0 IT8125073 A0 IT 8125073A0
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- integrated circuit
- semiconductor integrated
- circuit devices
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0828—Combination of direct and inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55168044A JPS5792858A (en) | 1980-12-01 | 1980-12-01 | Semiconductor integrated circuit device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8125073A0 true IT8125073A0 (it) | 1981-11-13 |
IT1139738B IT1139738B (it) | 1986-09-24 |
Family
ID=15860776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25073/81A IT1139738B (it) | 1980-12-01 | 1981-11-13 | Dispositivi a circuito integrato a semiconduttori e procedimento per la sua fabbricazione |
Country Status (8)
Country | Link |
---|---|
US (1) | US4502201A (it) |
JP (1) | JPS5792858A (it) |
DE (1) | DE3146779A1 (it) |
FR (1) | FR2495379A1 (it) |
GB (1) | GB2088627B (it) |
HK (1) | HK43586A (it) |
IT (1) | IT1139738B (it) |
MY (1) | MY8600603A (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210281A (ja) * | 1982-05-31 | 1983-12-07 | トステム株式会社 | 連段窓改装における旧窓枠除去方法 |
JPS58210283A (ja) * | 1982-05-31 | 1983-12-07 | トステム株式会社 | 連段窓改装における旧窓枠除去方法 |
US4797372A (en) * | 1985-11-01 | 1989-01-10 | Texas Instruments Incorporated | Method of making a merge bipolar and complementary metal oxide semiconductor transistor device |
US5023690A (en) * | 1986-10-24 | 1991-06-11 | Texas Instruments Incorporated | Merged bipolar and complementary metal oxide semiconductor transistor device |
EP0309788A1 (de) * | 1987-09-30 | 1989-04-05 | Siemens Aktiengesellschaft | Verfahren zur Erzeugung eines versenkten Oxids |
JP2005116973A (ja) * | 2003-10-10 | 2005-04-28 | Seiko Epson Corp | 半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
DE2455347A1 (de) * | 1974-11-22 | 1976-05-26 | Itt Ind Gmbh Deutsche | Monolithisch integrierte festkoerperschaltung und herstellungsverfahren |
FR2352403A1 (fr) * | 1976-05-20 | 1977-12-16 | Comp Generale Electricite | Circuit integre rapide |
US4157268A (en) * | 1977-06-16 | 1979-06-05 | International Business Machines Corporation | Localized oxidation enhancement for an integrated injection logic circuit |
DE2835632A1 (de) * | 1978-08-14 | 1980-02-28 | Bosch Gmbh Robert | Monolithisch integrierte schaltung und verfahren zu ihrer herstellung |
DE3020609C2 (de) * | 1979-05-31 | 1985-11-07 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element |
JPS5696852A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Semiconductor device |
DE3029013A1 (de) * | 1980-07-31 | 1982-02-25 | Robert Bosch Gmbh, 7000 Stuttgart | Hochintegrierte, monolithische halbleiterschaltung |
-
1980
- 1980-12-01 JP JP55168044A patent/JPS5792858A/ja active Pending
-
1981
- 1981-09-16 FR FR8117485A patent/FR2495379A1/fr active Pending
- 1981-09-25 GB GB8129016A patent/GB2088627B/en not_active Expired
- 1981-11-13 IT IT25073/81A patent/IT1139738B/it active
- 1981-11-25 DE DE19813146779 patent/DE3146779A1/de not_active Withdrawn
- 1981-12-01 US US06/326,278 patent/US4502201A/en not_active Expired - Fee Related
-
1986
- 1986-06-09 HK HK435/86A patent/HK43586A/xx unknown
- 1986-12-30 MY MY603/86A patent/MY8600603A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5792858A (en) | 1982-06-09 |
US4502201A (en) | 1985-03-05 |
GB2088627A (en) | 1982-06-09 |
GB2088627B (en) | 1985-01-03 |
DE3146779A1 (de) | 1982-09-09 |
MY8600603A (en) | 1986-12-31 |
HK43586A (en) | 1986-06-20 |
FR2495379A1 (fr) | 1982-06-04 |
IT1139738B (it) | 1986-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19931118 |