IT1176392B - Dispositivo a circuito integrato a semiconduttore - Google Patents

Dispositivo a circuito integrato a semiconduttore

Info

Publication number
IT1176392B
IT1176392B IT21908/84A IT2190884A IT1176392B IT 1176392 B IT1176392 B IT 1176392B IT 21908/84 A IT21908/84 A IT 21908/84A IT 2190884 A IT2190884 A IT 2190884A IT 1176392 B IT1176392 B IT 1176392B
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Application number
IT21908/84A
Other languages
English (en)
Other versions
IT8421908A1 (it
IT8421908A0 (it
Inventor
Kawashima Masatoshi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8421908A0 publication Critical patent/IT8421908A0/it
Publication of IT8421908A1 publication Critical patent/IT8421908A1/it
Application granted granted Critical
Publication of IT1176392B publication Critical patent/IT1176392B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT21908/84A 1983-07-25 1984-07-16 Dispositivo a circuito integrato a semiconduttore IT1176392B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58134316A JPS6027145A (ja) 1983-07-25 1983-07-25 半導体集積回路装置

Publications (3)

Publication Number Publication Date
IT8421908A0 IT8421908A0 (it) 1984-07-16
IT8421908A1 IT8421908A1 (it) 1986-01-16
IT1176392B true IT1176392B (it) 1987-08-18

Family

ID=15125447

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21908/84A IT1176392B (it) 1983-07-25 1984-07-16 Dispositivo a circuito integrato a semiconduttore

Country Status (9)

Country Link
US (1) US4766475A (it)
JP (1) JPS6027145A (it)
KR (1) KR920008396B1 (it)
DE (1) DE3427285A1 (it)
FR (1) FR2550012B1 (it)
GB (1) GB2143990B (it)
HK (1) HK22289A (it)
IT (1) IT1176392B (it)
SG (1) SG77188G (it)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564787B2 (ja) * 1983-12-23 1996-12-18 富士通株式会社 ゲートアレー大規模集積回路装置及びその製造方法
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
JPH0650761B2 (ja) * 1986-08-12 1994-06-29 富士通株式会社 半導体装置
JPS63108733A (ja) * 1986-10-24 1988-05-13 Nec Corp 半導体集積回路
JPH06105757B2 (ja) * 1987-02-13 1994-12-21 富士通株式会社 マスタ・スライス型半導体集積回路
JPH0758734B2 (ja) * 1987-02-23 1995-06-21 株式会社東芝 絶縁ゲ−ト型セミカスタム集積回路
JPH01256149A (ja) * 1988-04-06 1989-10-12 Hitachi Ltd ゲートアレイ集積回路
JPH01289138A (ja) * 1988-05-16 1989-11-21 Toshiba Corp マスタースライス型半導体集積回路
US5162893A (en) * 1988-05-23 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device with an enlarged internal logic circuit area
JPH0210869A (ja) * 1988-06-29 1990-01-16 Hitachi Ltd 半導体装置
US5019889A (en) * 1988-06-29 1991-05-28 Hitachi, Ltd. Semiconductor integrated circuit device
JP2710953B2 (ja) * 1988-06-29 1998-02-10 株式会社日立製作所 半導体装置
US5300796A (en) * 1988-06-29 1994-04-05 Hitachi, Ltd. Semiconductor device having an internal cell array region and a peripheral region surrounding the internal cell array for providing input/output basic cells
NL194182C (nl) * 1988-07-23 2001-08-03 Samsung Electronics Co Ltd Randloze moederschijf-halfgeleiderinrichting.
JPH02152254A (ja) * 1988-12-02 1990-06-12 Mitsubishi Electric Corp 半導体集積回路装置
JPH0369141A (ja) * 1989-08-08 1991-03-25 Nec Corp セミカスタム半導体集積回路
US5250823A (en) * 1989-10-24 1993-10-05 U.S. Philips Corp. Integrated CMOS gate-array circuit
US5045913A (en) * 1990-01-29 1991-09-03 International Business Machines Corp. Bit stack compatible input/output circuits
US5367187A (en) * 1992-12-22 1994-11-22 Quality Semiconductor, Inc. Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions
US5691218A (en) * 1993-07-01 1997-11-25 Lsi Logic Corporation Method of fabricating a programmable polysilicon gate array base cell structure
US5552333A (en) * 1994-09-16 1996-09-03 Lsi Logic Corporation Method for designing low profile variable width input/output cells
US5760428A (en) * 1996-01-25 1998-06-02 Lsi Logic Corporation Variable width low profile gate array input/output architecture
US5698873A (en) * 1996-03-08 1997-12-16 Lsi Logic Corporation High density gate array base cell architecture
US6518628B1 (en) 1997-05-15 2003-02-11 Siemens Aktiengesellschaft Integrated CMOS circuit configuration, and production of same
JP3169883B2 (ja) * 1998-02-26 2001-05-28 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置及びその機能セルの配置方法
JP3971025B2 (ja) * 1998-05-29 2007-09-05 富士通株式会社 半導体装置及び半導体装置のレイアウト方法
JP2000068488A (ja) * 1998-08-20 2000-03-03 Oki Electric Ind Co Ltd 半導体集積回路のレイアウト方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3777216A (en) * 1972-10-02 1973-12-04 Motorola Inc Avalanche injection input protection circuit
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
JPS60953B2 (ja) * 1977-12-30 1985-01-11 富士通株式会社 半導体集積回路装置
JPS5843905B2 (ja) * 1979-07-31 1983-09-29 富士通株式会社 半導体集積回路の製造方法
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS57181152A (en) * 1981-04-30 1982-11-08 Toshiba Corp Semiconductor integrated circuit device
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5830235A (ja) * 1981-08-18 1983-02-22 Fujitsu Ltd ゲ−トアレイ
JPS5835963A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 集積回路装置
JPS58190036A (ja) * 1982-04-23 1983-11-05 Fujitsu Ltd ゲ−ト・アレイ大規模集積回路装置
US4513307A (en) * 1982-05-05 1985-04-23 Rockwell International Corporation CMOS/SOS transistor gate array apparatus

Also Published As

Publication number Publication date
SG77188G (en) 1989-03-23
DE3427285A1 (de) 1985-02-14
KR850000794A (ko) 1985-03-09
JPH0479136B2 (it) 1992-12-15
KR920008396B1 (ko) 1992-09-28
IT8421908A1 (it) 1986-01-16
HK22289A (en) 1989-03-24
FR2550012B1 (fr) 1988-03-18
GB8414839D0 (en) 1984-07-18
GB2143990B (en) 1987-04-15
FR2550012A1 (fr) 1985-02-01
US4766475A (en) 1988-08-23
DE3427285C2 (it) 1993-07-29
JPS6027145A (ja) 1985-02-12
GB2143990A (en) 1985-02-20
IT8421908A0 (it) 1984-07-16

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970728