KR930001392A - 반도체 메모리 장치의 전원 접지선 배선방법 - Google Patents

반도체 메모리 장치의 전원 접지선 배선방법 Download PDF

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Publication number
KR930001392A
KR930001392A KR1019910010194A KR910010194A KR930001392A KR 930001392 A KR930001392 A KR 930001392A KR 1019910010194 A KR1019910010194 A KR 1019910010194A KR 910010194 A KR910010194 A KR 910010194A KR 930001392 A KR930001392 A KR 930001392A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
power
line
ground line
Prior art date
Application number
KR1019910010194A
Other languages
English (en)
Inventor
서영호
임형규
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910010194A priority Critical patent/KR930001392A/ko
Priority to TW081104313A priority patent/TW245835B/zh
Priority to ITMI921460A priority patent/IT1258990B/it
Priority to DE4219927A priority patent/DE4219927A1/de
Priority to GB9212830A priority patent/GB2256968A/en
Priority to FR9207335A priority patent/FR2678109B1/fr
Priority to JP4161159A priority patent/JPH0719851B2/ja
Publication of KR930001392A publication Critical patent/KR930001392A/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체 메모리 장치의 전원 접지선 배선방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 따른 레이아웃도.
제5도는 제4도의 단면구조도.
제6도는 본 발명의 가능한 일실시예.
제7도는 본 발명의 가능한 다른 실시예.

Claims (3)

  1. 각각의 전원 및 접지선을 가지는 입력단 및 출력단을 구비하는 반도체 메모리 장치에 있어서, 상기 입력단 또는 출력단의 전원선 또는 접지선이 상기 출력단 또는 입력단의 전원선 또는 접지선이 접촉된 기판, 웰 또는 가아드링 영역에는 접촉되지 않음을 특징으로 하는 전원/접지선 배선방법.
  2. 제1도전형의 반도체 영역에 접촉된 입력단 전원선 또는 접지선을 가지는 반도체 메모리 장치에 있어서, 상기 반도체 메모리 장치의 출력단 전원선 또는 접지선이 상기 제1도전형의 반도체 영역에는 접촉하지 않음을 특징으로 하는 전원/접지선 배선방법.
  3. 제2항에 있어서, 상기 제1도전형의 반도체 영역에는 상기 반도체 메모리 장치내의 다른 회로에 사용되는 전원선 또는 접지선이 접촉됨을 특징으로 하는 전원/접지선 배선방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910010194A 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법 KR930001392A (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법
TW081104313A TW245835B (ko) 1991-06-19 1992-06-02
ITMI921460A IT1258990B (it) 1991-06-19 1992-06-12 Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita
DE4219927A DE4219927A1 (de) 1991-06-19 1992-06-17 Anordnung von spannungsquelle- und erdungsleitungen einer halbleiterspeichereinrichtung
GB9212830A GB2256968A (en) 1991-06-19 1992-06-17 Connections in semiconductor memory devices
FR9207335A FR2678109B1 (fr) 1991-06-19 1992-06-17 Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur.
JP4161159A JPH0719851B2 (ja) 1991-06-19 1992-06-19 半導体メモリ装置における電源線及び接地線の配線方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Publications (1)

Publication Number Publication Date
KR930001392A true KR930001392A (ko) 1993-01-16

Family

ID=19316015

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Country Status (7)

Country Link
JP (1) JPH0719851B2 (ko)
KR (1) KR930001392A (ko)
DE (1) DE4219927A1 (ko)
FR (1) FR2678109B1 (ko)
GB (1) GB2256968A (ko)
IT (1) IT1258990B (ko)
TW (1) TW245835B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5922357A (ja) * 1982-07-28 1984-02-04 Toshiba Corp Ｃｍｏｓ形半導体集積回路
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
DE3855356T2 (de) * 1987-03-18 1997-01-30 Nec Corp Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Also Published As

Publication number Publication date
FR2678109A1 (fr) 1992-12-24
JPH06112435A (ja) 1994-04-22
TW245835B (ko) 1995-04-21
JPH0719851B2 (ja) 1995-03-06
IT1258990B (it) 1996-03-11
ITMI921460A0 (it) 1992-06-12
FR2678109B1 (fr) 1994-01-21
GB2256968A (en) 1992-12-23
DE4219927A1 (de) 1992-12-24
ITMI921460A1 (it) 1993-12-12
GB9212830D0 (en) 1992-07-29

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