FR2678109B1 - Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur. - Google Patents

Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur.

Info

Publication number
FR2678109B1
FR2678109B1 FR9207335A FR9207335A FR2678109B1 FR 2678109 B1 FR2678109 B1 FR 2678109B1 FR 9207335 A FR9207335 A FR 9207335A FR 9207335 A FR9207335 A FR 9207335A FR 2678109 B1 FR2678109 B1 FR 2678109B1
Authority
FR
France
Prior art keywords
voltage
arrangement
memory device
semiconductor memory
source lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9207335A
Other languages
English (en)
Other versions
FR2678109A1 (fr
Inventor
Young-Ho Seo
Hyoung-Kyu Yim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2678109A1 publication Critical patent/FR2678109A1/fr
Application granted granted Critical
Publication of FR2678109B1 publication Critical patent/FR2678109B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
FR9207335A 1991-06-19 1992-06-17 Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur. Expired - Fee Related FR2678109B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Publications (2)

Publication Number Publication Date
FR2678109A1 FR2678109A1 (fr) 1992-12-24
FR2678109B1 true FR2678109B1 (fr) 1994-01-21

Family

ID=19316015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9207335A Expired - Fee Related FR2678109B1 (fr) 1991-06-19 1992-06-17 Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur.

Country Status (7)

Country Link
JP (1) JPH0719851B2 (fr)
KR (1) KR930001392A (fr)
DE (1) DE4219927A1 (fr)
FR (1) FR2678109B1 (fr)
GB (1) GB2256968A (fr)
IT (1) IT1258990B (fr)
TW (1) TW245835B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5922357A (ja) * 1982-07-28 1984-02-04 Toshiba Corp Ｃｍｏｓ形半導体集積回路
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
US5023689A (en) * 1987-03-18 1991-06-11 Nec Corporation Complementary integrated circuit device equipped with latch-up preventing means

Also Published As

Publication number Publication date
GB2256968A (en) 1992-12-23
ITMI921460A0 (it) 1992-06-12
JPH06112435A (ja) 1994-04-22
ITMI921460A1 (it) 1993-12-12
IT1258990B (it) 1996-03-11
KR930001392A (ko) 1993-01-16
FR2678109A1 (fr) 1992-12-24
GB9212830D0 (en) 1992-07-29
JPH0719851B2 (ja) 1995-03-06
DE4219927A1 (de) 1992-12-24
TW245835B (fr) 1995-04-21

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Legal Events

Date Code Title Description
ST Notification of lapse