FR2638284B1 - Dispositif de memoire a semi-conducteur - Google Patents

Dispositif de memoire a semi-conducteur

Info

Publication number
FR2638284B1
FR2638284B1 FR898912999A FR8912999A FR2638284B1 FR 2638284 B1 FR2638284 B1 FR 2638284B1 FR 898912999 A FR898912999 A FR 898912999A FR 8912999 A FR8912999 A FR 8912999A FR 2638284 B1 FR2638284 B1 FR 2638284B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR898912999A
Other languages
English (en)
Other versions
FR2638284A1 (fr
Inventor
Ohishi Motohiro
Matsudaira Kunio
Fukumura Keiji
Sasada Shigemi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17432730&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2638284(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of FR2638284A1 publication Critical patent/FR2638284A1/fr
Application granted granted Critical
Publication of FR2638284B1 publication Critical patent/FR2638284B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
FR898912999A 1988-10-20 1989-10-04 Dispositif de memoire a semi-conducteur Expired - Fee Related FR2638284B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63266576A JP2765583B2 (ja) 1988-10-20 1988-10-20 半導体メモリ装置

Publications (2)

Publication Number Publication Date
FR2638284A1 FR2638284A1 (fr) 1990-04-27
FR2638284B1 true FR2638284B1 (fr) 1994-10-14

Family

ID=17432730

Family Applications (1)

Application Number Title Priority Date Filing Date
FR898912999A Expired - Fee Related FR2638284B1 (fr) 1988-10-20 1989-10-04 Dispositif de memoire a semi-conducteur

Country Status (5)

Country Link
US (1) US4990999A (fr)
JP (1) JP2765583B2 (fr)
DE (1) DE3933178C2 (fr)
FR (1) FR2638284B1 (fr)
GB (1) GB2224162B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075749A (en) * 1989-12-29 1991-12-24 At&T Bell Laboratories Optical device including a grating
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
US5719806A (en) * 1991-02-18 1998-02-17 Yamane; Masatoshi Memory cell array
DE4115909C1 (fr) * 1991-05-15 1992-11-12 Siemens Ag, 8000 Muenchen, De
US5526306A (en) * 1994-02-10 1996-06-11 Mega Chips Corporation Semiconductor memory device and method of fabricating the same
US5621697A (en) * 1995-06-23 1997-04-15 Macronix International Co., Ltd. High density integrated circuit with bank select structure
US5883826A (en) * 1996-09-30 1999-03-16 Wendell; Dennis Lee Memory block select using multiple word lines to address a single memory cell row

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912858A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Niederohmige leitung
US4352031A (en) * 1980-04-23 1982-09-28 Rca Corporation Precharge circuit
JPS6059677B2 (ja) * 1981-08-19 1985-12-26 富士通株式会社 半導体記憶装置
EP0109854A3 (fr) * 1982-11-23 1985-08-07 American Microsystems, Incorporated Dispositifs de mémoire semi-conducteurs et leur procédé de fabrication
JPS59217356A (ja) * 1983-05-25 1984-12-07 Nec Corp 半導体記憶装置
JPS6030170A (ja) * 1983-07-29 1985-02-15 Hitachi Ltd 高集積読み出し専用メモリ
JPS61135165A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体メモリ装置
JPS61287164A (ja) * 1985-06-13 1986-12-17 Ricoh Co Ltd 半導体メモリ装置
JPS62145862A (ja) * 1985-12-20 1987-06-29 Sanyo Electric Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JPH02112278A (ja) 1990-04-24
GB2224162A (en) 1990-04-25
GB2224162B (en) 1992-07-15
FR2638284A1 (fr) 1990-04-27
US4990999A (en) 1991-02-05
DE3933178C2 (de) 1994-08-04
GB8922390D0 (en) 1989-11-22
JP2765583B2 (ja) 1998-06-18
DE3933178A1 (de) 1990-04-26

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Legal Events

Date Code Title Description
ST Notification of lapse