FR2551904B1 - Dispositif de memoire a semiconducteurs - Google Patents

Dispositif de memoire a semiconducteurs

Info

Publication number
FR2551904B1
FR2551904B1 FR848413339A FR8413339A FR2551904B1 FR 2551904 B1 FR2551904 B1 FR 2551904B1 FR 848413339 A FR848413339 A FR 848413339A FR 8413339 A FR8413339 A FR 8413339A FR 2551904 B1 FR2551904 B1 FR 2551904B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR848413339A
Other languages
English (en)
Other versions
FR2551904A1 (fr
Inventor
Tetsuro Matsumoto
Kazuhiko Kajigaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2551904A1 publication Critical patent/FR2551904A1/fr
Application granted granted Critical
Publication of FR2551904B1 publication Critical patent/FR2551904B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/10Decoders
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/06Address interface arrangements, e.g. address buffers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/12Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
FR848413339A 1983-09-12 1984-08-29 Dispositif de memoire a semiconducteurs Expired - Lifetime FR2551904B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58166635A JPS6059588A (ja) 1983-09-12 1983-09-12 半導体記憶装置

Publications (2)

Publication Number Publication Date
FR2551904A1 FR2551904A1 (fr) 1985-03-15
FR2551904B1 true FR2551904B1 (fr) 1992-06-19

Family

ID=15834933

Family Applications (1)

Application Number Title Priority Date Filing Date
FR848413339A Expired - Lifetime FR2551904B1 (fr) 1983-09-12 1984-08-29 Dispositif de memoire a semiconducteurs

Country Status (10)

Country Link
US (1) US4635233A (fr)
JP (1) JPS6059588A (fr)
KR (1) KR920010559B1 (fr)
DE (1) DE3432973A1 (fr)
FR (1) FR2551904B1 (fr)
GB (1) GB2147756B (fr)
HK (1) HK588A (fr)
IT (1) IT1175688B (fr)
MY (1) MY8700802A (fr)
SG (1) SG88087G (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237294A (ja) * 1985-04-12 1986-10-22 Hitachi Ltd ダイナミツク型ram
KR900002664B1 (ko) * 1985-08-16 1990-04-21 가부시끼가이샤 히다찌세이사꾸쇼 시리얼 데이터 기억 반도체 메모리
JPS62202537A (ja) * 1986-02-19 1987-09-07 Hitachi Ltd 半導体集積回路装置
JPS62231495A (ja) * 1986-03-31 1987-10-12 Toshiba Corp 半導体記憶装置
US4979145A (en) * 1986-05-01 1990-12-18 Motorola, Inc. Structure and method for improving high speed data rate in a DRAM
US4884240A (en) * 1986-06-19 1989-11-28 Texas Instruments Incorporated Static row driver
JP2545825B2 (ja) * 1987-02-20 1996-10-23 ソニー株式会社 半導体記憶装置
JPH0715800B2 (ja) * 1987-02-27 1995-02-22 日本電気アイシーマイコンシステム株式会社 記憶回路
JP2603206B2 (ja) * 1987-03-16 1997-04-23 シーメンス、アクチエンゲゼルシヤフト 多段集積デコーダ装置
JPS63225991A (ja) * 1987-03-16 1988-09-20 Hitachi Ltd 半導体記憶装置
JP2684365B2 (ja) * 1987-04-24 1997-12-03 株式会社日立製作所 半導体記憶装置
US4931999A (en) * 1987-07-27 1990-06-05 Mitsubishi Denki Kabushiki Kaisha Access circuit for a semiconductor memory
US4843261A (en) * 1988-02-29 1989-06-27 International Business Machines Corporation Complementary output, high-density CMOS decoder/driver circuit for semiconductor memories
DE68927248T2 (de) * 1988-10-28 1997-02-06 Texas Instruments Inc Dekodierung von Steuer-/Initialisierungssignalen mit örtlichen Vordekodierern
JPH0772991B2 (ja) * 1988-12-06 1995-08-02 三菱電機株式会社 半導体記憶装置
KR950004853B1 (ko) * 1991-08-14 1995-05-15 삼성전자 주식회사 저전력용 블럭 선택 기능을 가지는 반도체 메모리 장치
JP3068352B2 (ja) * 1992-12-01 2000-07-24 日本電気株式会社 半導体メモリ
KR100206598B1 (ko) * 1995-12-29 1999-07-01 김영환 워드라인 구동 장치
KR100203145B1 (ko) 1996-06-29 1999-06-15 김영환 반도체 메모리 소자의 뱅크 분산 방법
KR100761755B1 (ko) * 2005-02-28 2007-09-28 삼성전자주식회사 입출력 비트구조를 조절할 수 있는 반도체 메모리 장치
KR101629809B1 (ko) * 2014-03-26 2016-06-14 주식회사 나인에코 대형건물 실내공기질 예측 서비스 제공 시스템

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525840A (en) * 1978-08-11 1980-02-23 Fujitsu Ltd Decoder circuit
JPS5575899U (fr) * 1978-11-20 1980-05-24
US4264828A (en) * 1978-11-27 1981-04-28 Intel Corporation MOS Static decoding circuit
JPS5654681A (en) * 1979-10-09 1981-05-14 Nec Corp Decoding circuit
JPS573289A (en) * 1980-06-04 1982-01-08 Hitachi Ltd Semiconductor storing circuit device
JPS5766587A (en) * 1980-10-09 1982-04-22 Fujitsu Ltd Static semiconductor storage device
JPS57152580A (en) * 1981-03-18 1982-09-20 Fujitsu Ltd Decoding circuit
JPS5873097A (ja) * 1981-10-27 1983-05-02 Nec Corp デコ−ダ−回路

Also Published As

Publication number Publication date
US4635233A (en) 1987-01-06
GB2147756B (en) 1986-09-03
GB8422280D0 (en) 1984-10-10
IT8422604A0 (it) 1984-09-11
HK588A (en) 1988-01-15
GB2147756A (en) 1985-05-15
DE3432973C2 (fr) 1993-03-18
JPS6059588A (ja) 1985-04-05
DE3432973A1 (de) 1985-03-28
IT1175688B (it) 1987-07-15
FR2551904A1 (fr) 1985-03-15
KR920010559B1 (ko) 1992-12-05
KR850002637A (ko) 1985-05-15
SG88087G (en) 1988-09-23
JPH0568040B2 (fr) 1993-09-28
MY8700802A (en) 1987-12-31

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Legal Events

Date Code Title Description
ST Notification of lapse