FR2506057B1 - Memoire a semi-conducteurs - Google Patents

Memoire a semi-conducteurs

Info

Publication number
FR2506057B1
FR2506057B1 FR8202186A FR8202186A FR2506057B1 FR 2506057 B1 FR2506057 B1 FR 2506057B1 FR 8202186 A FR8202186 A FR 8202186A FR 8202186 A FR8202186 A FR 8202186A FR 2506057 B1 FR2506057 B1 FR 2506057B1
Authority
FR
France
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8202186A
Other languages
English (en)
Other versions
FR2506057A1 (fr
Inventor
Katsuhiro Shimohigashi
Hiroo Masuda
Kunihiko Ikuzaki
Hiroshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2506057A1 publication Critical patent/FR2506057A1/fr
Application granted granted Critical
Publication of FR2506057B1 publication Critical patent/FR2506057B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/164—Three dimensional processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Databases & Information Systems (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR8202186A 1981-05-13 1982-02-10 Memoire a semi-conducteurs Expired FR2506057B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070733A JPS57186289A (en) 1981-05-13 1981-05-13 Semiconductor memory

Publications (2)

Publication Number Publication Date
FR2506057A1 FR2506057A1 (fr) 1982-11-19
FR2506057B1 true FR2506057B1 (fr) 1986-12-19

Family

ID=13440022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8202186A Expired FR2506057B1 (fr) 1981-05-13 1982-02-10 Memoire a semi-conducteurs

Country Status (8)

Country Link
US (5) US4472792A (fr)
JP (1) JPS57186289A (fr)
DE (1) DE3217493A1 (fr)
FR (1) FR2506057B1 (fr)
GB (2) GB2098396B (fr)
HK (2) HK45086A (fr)
IT (1) IT1151957B (fr)
MY (2) MY8600550A (fr)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4827448A (en) * 1976-09-13 1989-05-02 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
US5170374A (en) * 1981-05-13 1992-12-08 Hitachi, Ltd. Semiconductor memory
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
JPS5956292A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd 半導体記憶装置
US4589099A (en) * 1982-12-20 1986-05-13 Texas Instruments Incorporated Solid slice memory
US4633429A (en) * 1982-12-27 1986-12-30 Motorola, Inc. Partial memory selection using a programmable decoder
US4675808A (en) * 1983-08-08 1987-06-23 American Telephone And Telegraph Company At&T Bell Laboratories Multiplexed-address interface for addressing memories of various sizes
JPS6036192U (ja) * 1983-08-18 1985-03-12 シルバー精工株式会社 産業用ロボット
US4752907A (en) * 1983-08-31 1988-06-21 Amdahl Corporation Integrated circuit scanning apparatus having scanning data lines for connecting selected data locations to an I/O terminal
JPS6079593A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 半導体集積回路システム
JPS60115094A (ja) * 1983-11-16 1985-06-21 Fujitsu Ltd ダイナミツクランダムアクセスメモリ装置
WO1985002314A2 (fr) * 1983-12-02 1985-06-06 American Telephone & Telegraph Company Memoire a semi-conducteurs
JPS60136086A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体記憶装置
JPS60137119A (ja) * 1983-12-26 1985-07-20 Matsushita Electric Ind Co Ltd データ書き込み方法
JPS60200287A (ja) * 1984-03-24 1985-10-09 株式会社東芝 記憶装置
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier
USRE34026E (en) * 1984-08-02 1992-08-11 Texas Instruments Incorporated CMOS sense amplifier with N-channel sensing
IT1213241B (it) * 1984-11-07 1989-12-14 Ates Componenti Elettron Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
JPS61142591A (ja) * 1984-12-13 1986-06-30 Toshiba Corp 半導体記憶装置
DE3673854D1 (de) * 1985-03-18 1990-10-11 Nec Corp Speicherschaltung mit schreibschema.
US4670861A (en) * 1985-06-21 1987-06-02 Advanced Micro Devices, Inc. CMOS N-well bias generator and gating system
JPH0664907B2 (ja) * 1985-06-26 1994-08-22 株式会社日立製作所 ダイナミツク型ｒａｍ
US4760560A (en) * 1985-08-30 1988-07-26 Kabushiki Kaisha Toshiba Random access memory with resistance to crystal lattice memory errors
JPS62231495A (ja) * 1986-03-31 1987-10-12 Toshiba Corp 半導体記憶装置
US4716550A (en) * 1986-07-07 1987-12-29 Motorola, Inc. High performance output driver
US4780850A (en) * 1986-10-31 1988-10-25 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic random access memory
US4853897A (en) * 1986-12-10 1989-08-01 Kabushiki Kaisha Toshiba Complementary semiconductor memory device
US4821226A (en) * 1987-01-30 1989-04-11 Rca Licensing Corporation Dual port video memory system having a bit-serial address input port
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
US5127739A (en) * 1987-04-27 1992-07-07 Texas Instruments Incorporated CMOS sense amplifier with bit line isolation
US4807195A (en) * 1987-05-18 1989-02-21 International Business Machines Corporation Apparatus and method for providing a dual sense amplifier with divided bit line isolation
US5249159A (en) * 1987-05-27 1993-09-28 Hitachi, Ltd. Semiconductor memory
JPH0748502B2 (ja) * 1988-05-13 1995-05-24 三菱電機株式会社 半導体装置の製造方法
EP0407697A1 (fr) * 1989-07-10 1991-01-16 Seiko Epson Corporation Appareil de mémoire
JP2974252B2 (ja) * 1989-08-19 1999-11-10 富士通株式会社 半導体記憶装置
JPH03144993A (ja) * 1989-10-30 1991-06-20 Matsushita Electron Corp 半導体メモリ装置
KR930002574B1 (ko) * 1990-03-09 1993-04-03 금성일렉트론 주식회사 워드라인 구동회로
US5594681A (en) * 1990-03-30 1997-01-14 Fujitsu Limited Dynamic random access memory wherein timing of completion of data reading is advanced
IL96808A (en) * 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
JPH0475373A (ja) * 1990-07-18 1992-03-10 Oki Electric Ind Co Ltd 半導体集積回路装置
JPH03228282A (ja) * 1990-10-26 1991-10-09 Hitachi Ltd 半導体メモリ
US5197029A (en) * 1991-02-07 1993-03-23 Texas Instruments Incorporated Common-line connection for integrated memory array
US5878269A (en) * 1992-03-27 1999-03-02 National Semiconductor Corporation High speed processor for operation at reduced operating voltage
EP0579862A1 (fr) * 1992-07-24 1994-01-26 Siemens Aktiengesellschaft Dispositif de mémoire intégrée à semi-conducteurs
JPH10502181A (ja) * 1994-06-20 1998-02-24 ネオマジック・コーポレイション メモリインタフェースのないグラフィックスコントローラ集積回路
US5867721A (en) * 1995-02-07 1999-02-02 Intel Corporation Selecting an integrated circuit from different integrated circuit array configurations
US5719890A (en) * 1995-06-01 1998-02-17 Micron Technology, Inc. Method and circuit for transferring data with dynamic parity generation and checking scheme in multi-port DRAM
JP3780011B2 (ja) * 1995-07-14 2006-05-31 株式会社ルネサステクノロジ 半導体記憶装置
JP2817836B2 (ja) * 1995-11-30 1998-10-30 日本電気株式会社 半導体メモリ装置
US6487207B1 (en) 1997-02-26 2002-11-26 Micron Technology, Inc. Shared buffer memory architecture for asynchronous transfer mode switching and multiplexing technology
JP4206508B2 (ja) * 1997-12-04 2009-01-14 ブラザー工業株式会社 信号制御回路
FR2787922B1 (fr) * 1998-12-23 2002-06-28 St Microelectronics Sa Cellule memoire a programmation unique en technologie cmos
JP4186119B2 (ja) * 2005-07-27 2008-11-26 セイコーエプソン株式会社 強誘電体メモリ装置
US7330388B1 (en) 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation
US20110018335A1 (en) * 2009-07-21 2011-01-27 Hodges Frank J Wheel component covering
US8919890B2 (en) * 2009-11-02 2014-12-30 Segiu Anca Wheel with increased interior lip depth

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760380A (en) * 1972-06-02 1973-09-18 Motorola Inc Silicon gate complementary mos dynamic ram
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3983545A (en) * 1975-06-30 1976-09-28 International Business Machines Corporation Random access memory employing single ended sense latch for one device cell
US3983544A (en) * 1975-08-25 1976-09-28 International Business Machines Corporation Split memory array sharing same sensing and bit decode circuitry
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
GB1521955A (en) * 1976-03-16 1978-08-23 Tokyo Shibaura Electric Co Semiconductor memory device
US4045783A (en) * 1976-04-12 1977-08-30 Standard Microsystems Corporation Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry
JPS5472691A (en) * 1977-11-21 1979-06-11 Toshiba Corp Semiconductor device
JPS54107278A (en) * 1978-02-10 1979-08-22 Hitachi Ltd Semiconductor device
JPS54112131A (en) * 1978-02-23 1979-09-01 Nec Corp Sense amplifier circuit of mos memory
JPS5514588A (en) * 1978-07-19 1980-02-01 Toshiba Corp Semiconductor dynamic memory unit
JPS5616992A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Signal readout circuit
JPS5644189A (en) 1979-09-19 1981-04-23 Hitachi Ltd Semiconductor memory
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
DE3101520A1 (de) * 1981-01-19 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter halbleiterspeicher
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
JPS57186290A (en) * 1981-05-12 1982-11-16 Seiko Epson Corp Reproducer of dynamic ram

Also Published As

Publication number Publication date
DE3217493A1 (de) 1982-12-16
GB2098396A (en) 1982-11-17
GB2117565B (en) 1984-09-19
US4592022A (en) 1986-05-27
MY8600550A (en) 1986-12-31
GB8309216D0 (en) 1983-05-11
US4539658A (en) 1985-09-03
IT8221037A0 (it) 1982-05-03
FR2506057A1 (fr) 1982-11-19
US4860255A (en) 1989-08-22
DE3217493C2 (fr) 1993-09-02
HK46386A (en) 1986-06-27
US4646267A (en) 1987-02-24
GB2098396B (en) 1984-09-19
MY8600562A (en) 1986-12-31
GB2117565A (en) 1983-10-12
HK45086A (en) 1986-06-27
IT1151957B (it) 1986-12-24
JPH0424798B2 (fr) 1992-04-28
US4472792A (en) 1984-09-18
JPS57186289A (en) 1982-11-16

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