NL192588B - Halfgeleider geheugenelement. - Google Patents

Halfgeleider geheugenelement.

Info

Publication number
NL192588B
NL192588B NL8402489A NL8402489A NL192588B NL 192588 B NL192588 B NL 192588B NL 8402489 A NL8402489 A NL 8402489A NL 8402489 A NL8402489 A NL 8402489A NL 192588 B NL192588 B NL 192588B
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
memory element
semiconductor
memory
Prior art date
Application number
NL8402489A
Other languages
English (en)
Other versions
NL192588C (nl
NL8402489A (nl
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL8402489A publication Critical patent/NL8402489A/nl
Publication of NL192588B publication Critical patent/NL192588B/nl
Application granted granted Critical
Publication of NL192588C publication Critical patent/NL192588C/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
NL8402489A 1983-08-17 1984-08-13 Halfgeleider geheugenelement. NL192588C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15126283 1983-08-17
JP58151262A JPS6043295A (ja) 1983-08-17 1983-08-17 半導体記憶装置

Publications (3)

Publication Number Publication Date
NL8402489A NL8402489A (nl) 1985-03-18
NL192588B true NL192588B (nl) 1997-06-02
NL192588C NL192588C (nl) 1997-10-03

Family

ID=15514814

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8402489A NL192588C (nl) 1983-08-17 1984-08-13 Halfgeleider geheugenelement.

Country Status (4)

Country Link
US (1) US4644500A (nl)
JP (1) JPS6043295A (nl)
DE (1) DE3430145C2 (nl)
NL (1) NL192588C (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221357A (ja) * 1985-07-22 1987-01-29 Toshiba Corp メモリシステム
US4764899A (en) * 1986-02-07 1988-08-16 Advanced Micro Devices, Inc. Writing speed in multi-port static rams
US4689771A (en) * 1986-03-03 1987-08-25 Motorola, Inc. Memory with improved write mode to read mode transition
US4914633A (en) * 1986-07-02 1990-04-03 Digital Equipment Corporation Self-timed programmable logic array with pre-charge circuit
US4794570A (en) * 1986-07-02 1988-12-27 Digital Equipment Corporation Self-timed programmable logic array with pre-charge circuit
JPH0810550B2 (ja) * 1986-09-09 1996-01-31 日本電気株式会社 バツフア回路
US4995001A (en) * 1988-10-31 1991-02-19 International Business Machines Corporation Memory cell and read circuit
DE69023456T2 (de) * 1989-10-30 1996-06-20 Ibm Bitdekodierungsschema für Speichermatrizen.
US5022010A (en) * 1989-10-30 1991-06-04 International Business Machines Corporation Word decoder for a memory array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588848A (en) * 1969-08-04 1971-06-28 Us Army Input-output control circuit for memory circuit
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS5951072B2 (ja) * 1979-02-26 1984-12-12 日本電気株式会社 半導体メモリ装置
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
JPS592997B2 (ja) * 1980-05-22 1984-01-21 富士通株式会社 スタテイツクメモリ
JPS6027114B2 (ja) * 1980-07-24 1985-06-27 日本電気株式会社 メモリ装置
JPS581883A (ja) * 1981-06-25 1983-01-07 Fujitsu Ltd 低電力スタチツクｒａｍ

Also Published As

Publication number Publication date
DE3430145A1 (de) 1985-03-07
NL192588C (nl) 1997-10-03
JPS6043295A (ja) 1985-03-07
NL8402489A (nl) 1985-03-18
US4644500A (en) 1987-02-17
DE3430145C2 (de) 1993-12-09

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Lapsed because of reaching the maximum lifetime of a patent

Effective date: 20040813