FR2499291B1 - Memoire statique - Google Patents

Memoire statique

Info

Publication number
FR2499291B1
FR2499291B1 FR8123989A FR8123989A FR2499291B1 FR 2499291 B1 FR2499291 B1 FR 2499291B1 FR 8123989 A FR8123989 A FR 8123989A FR 8123989 A FR8123989 A FR 8123989A FR 2499291 B1 FR2499291 B1 FR 2499291B1
Authority
FR
France
Prior art keywords
static memory
static
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8123989A
Other languages
English (en)
Other versions
FR2499291A1 (fr
Inventor
Tokumasa Yasui
Hideaki Nakamura
Kiyofumi Uchibori
Nobuyoshi Tanimura
Osamu Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2499291A1 publication Critical patent/FR2499291A1/fr
Application granted granted Critical
Publication of FR2499291B1 publication Critical patent/FR2499291B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
FR8123989A 1981-02-02 1981-12-22 Memoire statique Expired FR2499291B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012960A JPS57127989A (en) 1981-02-02 1981-02-02 Mos static type ram

Publications (2)

Publication Number Publication Date
FR2499291A1 FR2499291A1 (fr) 1982-08-06
FR2499291B1 true FR2499291B1 (fr) 1986-12-05

Family

ID=11819819

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8123989A Expired FR2499291B1 (fr) 1981-02-02 1981-12-22 Memoire statique

Country Status (9)

Country Link
US (1) US4507759A (fr)
JP (1) JPS57127989A (fr)
DE (1) DE3203417A1 (fr)
FR (1) FR2499291B1 (fr)
GB (1) GB2092403B (fr)
HK (1) HK54586A (fr)
IT (1) IT1149530B (fr)
MY (1) MY8600547A (fr)
SG (1) SG20386G (fr)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119332A (en) * 1981-05-13 1992-06-02 Hitachi, Ltd. Semiconductor memory
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
JPS58203694A (ja) * 1982-05-21 1983-11-28 Nec Corp メモリ回路
JPS5975495A (ja) * 1982-10-22 1984-04-28 Hitachi Ltd Ｅｐｒｏｍ装置における読出し回路
JPS6043294A (ja) * 1983-08-18 1985-03-07 Toshiba Corp 半導体メモリ装置
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
EP0323876B1 (fr) * 1983-09-21 1992-11-11 THORN EMI North America Inc. Charge de ligne de bit et circuit de colonne pour une mémoire à semi-conducteurs
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
JP2557337B2 (ja) * 1984-05-30 1996-11-27 三菱電機株式会社 半導体記憶装置
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
US4694429A (en) * 1984-11-29 1987-09-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US4649301A (en) * 1985-01-07 1987-03-10 Thomson Components-Mostek Corp. Multiple-input sense amplifier with two CMOS differential stages driving a high-gain stage
DE3673854D1 (de) * 1985-03-18 1990-10-11 Nec Corp Speicherschaltung mit schreibschema.
CA1258320A (fr) * 1985-04-01 1989-08-08 Madhukar B. Vora Petite cellule de memoire vive sans contacts
JPH079976B2 (ja) * 1985-04-10 1995-02-01 日本電気株式会社 半導体メモリ
JPS6247897A (ja) * 1985-08-28 1987-03-02 Sony Corp 読み出し増幅器
US4685086A (en) * 1985-11-14 1987-08-04 Thomson Components-Mostek Corp. Memory cell leakage detection circuit
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US4905189B1 (en) * 1985-12-18 1993-06-01 System for reading and writing information
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
US5165039A (en) * 1986-03-28 1992-11-17 Texas Instruments Incorporated Register file for bit slice processor with simultaneous accessing of plural memory array cells
EP0257912A3 (fr) * 1986-08-29 1989-08-23 Kabushiki Kaisha Toshiba Dispositif de mémoire statique à semi-conducteurs
JPS6376192A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
FR2608861A1 (fr) * 1986-12-23 1988-06-24 Labo Electronique Physique Circuit amplificateur de lecture pour une memoire ram statique
KR900006293B1 (ko) * 1987-06-20 1990-08-27 삼성전자 주식회사 씨모오스 디램의 데이터 전송회로
EP0320556B1 (fr) * 1987-12-15 1991-02-27 International Business Machines Corporation Générateur de tension de référence pour mémoires CMOS
JPH0766945B2 (ja) * 1988-09-06 1995-07-19 株式会社東芝 スタティック型メモリ
JPH0817034B2 (ja) * 1988-10-24 1996-02-21 三菱電機株式会社 半導体記憶装置
KR920010345B1 (ko) * 1990-06-30 1992-11-27 삼성전자 주식회사 선충전수단을 구비한 라이트 드라이버(write driver)
US5325338A (en) * 1991-09-04 1994-06-28 Advanced Micro Devices, Inc. Dual port memory, such as used in color lookup tables for video systems
JPH06162776A (ja) * 1992-11-18 1994-06-10 Nec Corp 半導体メモリ回路
JPH07147086A (ja) * 1993-11-02 1995-06-06 Nec Corp ダイナミック型半導体記憶装置
KR100439039B1 (ko) * 2002-09-09 2004-07-03 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 센스 증폭기
US7027346B2 (en) * 2003-01-06 2006-04-11 Texas Instruments Incorporated Bit line control for low power in standby
JP4562997B2 (ja) 2003-03-26 2010-10-13 株式会社半導体エネルギー研究所 素子基板及び発光装置
EP1607931B1 (fr) 2003-03-26 2014-01-08 Semiconductor Energy Laboratory Co., Ltd. Substrat pour dispositif et dispositif electroluminescent
US7248508B1 (en) * 2006-01-11 2007-07-24 Arm Limited Data retention in a semiconductor memory
JP5178182B2 (ja) * 2007-12-25 2013-04-10 株式会社東芝 半導体記憶装置
GB2515098B (en) * 2013-06-14 2016-02-03 Jaguar Land Rover Ltd Speaker device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352325A (en) * 1976-10-25 1978-05-12 Toshiba Corp Mos random access memory
JPS5472691A (en) * 1977-11-21 1979-06-11 Toshiba Corp Semiconductor device
US4272834A (en) * 1978-10-06 1981-06-09 Hitachi, Ltd. Data line potential setting circuit and MIS memory circuit using the same
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS55129994A (en) * 1979-03-26 1980-10-08 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
FR2499291A1 (fr) 1982-08-06
IT8219387A0 (it) 1982-02-01
JPH0241113B2 (fr) 1990-09-14
JPS57127989A (en) 1982-08-09
GB2092403B (en) 1984-08-01
US4507759A (en) 1985-03-26
DE3203417A1 (de) 1982-08-12
SG20386G (en) 1987-03-27
GB2092403A (en) 1982-08-11
IT1149530B (it) 1986-12-03
MY8600547A (en) 1986-12-31
HK54586A (en) 1986-08-01

Similar Documents

Publication Publication Date Title
FR2499291B1 (fr) Memoire statique
FR2497994B1 (fr) Support de memoire magneto-optique
FR2506057B1 (fr) Memoire a semi-conducteurs
KR880014861A (ko) 반도체 기억장치
FR2530376B1 (fr) Thermostat
DK147081C (da) Helikopterdaek
BR8206883A (pt) Manipulador
DK163757C (da) Spilleautomat
DE3219802A1 (de) Lagerelement
FI821899A0 (fi) Syrekonverteringsprocess foer fast metallsten
AR228298A1 (es) Cubo-rompecabezas
FR2553558B1 (fr) Memoire dynamique
FI822424A0 (fi) Galleruppburen konstruktion
BR8107810A (pt) Memoria somente-leitura e leitura-escrita
MA19539A1 (fr) N Acylaminophenylpyrazoles
FI822368A0 (fi) Integrerad styranordning foer hisskorg
IT8223923A0 (it) Struttura transistorizzata planare.
DK430682A (da) Thiolcarbamatholdigt herbicid
FR2511173B1 (fr) Circuit de memoire
DK207882A (da) Spilleautomat
DE3483408D1 (de) Statische randomspeicheranordnung.
SE8104935L (sv) Stegregister
DK249982A (da) Spilleautomat
FI823069A0 (fi) Puts foer husfasader
FI824390A0 (fi) Pyrrolidonherbicider foer antidoter

Legal Events

Date Code Title Description
ST Notification of lapse