IT8219387A0 - Struttura di memoria statica. - Google Patents

Struttura di memoria statica.

Info

Publication number
IT8219387A0
IT8219387A0 IT8219387A IT1938782A IT8219387A0 IT 8219387 A0 IT8219387 A0 IT 8219387A0 IT 8219387 A IT8219387 A IT 8219387A IT 1938782 A IT1938782 A IT 1938782A IT 8219387 A0 IT8219387 A0 IT 8219387A0
Authority
IT
Italy
Prior art keywords
memory structure
static memory
static
memory
Prior art date
Application number
IT8219387A
Other languages
English (en)
Other versions
IT1149530B (it
Inventor
Nobuyoshi Tanimura
Tokumasa Yasui
Osamu Minato
Hideaki Nakamura
Kiyofumi Uchibori
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8219387A0 publication Critical patent/IT8219387A0/it
Application granted granted Critical
Publication of IT1149530B publication Critical patent/IT1149530B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
IT19387/82A 1981-02-02 1982-02-01 Struttura di memoria statica IT1149530B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012960A JPS57127989A (en) 1981-02-02 1981-02-02 Mos static type ram

Publications (2)

Publication Number Publication Date
IT8219387A0 true IT8219387A0 (it) 1982-02-01
IT1149530B IT1149530B (it) 1986-12-03

Family

ID=11819819

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19387/82A IT1149530B (it) 1981-02-02 1982-02-01 Struttura di memoria statica

Country Status (9)

Country Link
US (1) US4507759A (it)
JP (1) JPS57127989A (it)
DE (1) DE3203417A1 (it)
FR (1) FR2499291B1 (it)
GB (1) GB2092403B (it)
HK (1) HK54586A (it)
IT (1) IT1149530B (it)
MY (1) MY8600547A (it)
SG (1) SG20386G (it)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186289A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor memory
US5119332A (en) * 1981-05-13 1992-06-02 Hitachi, Ltd. Semiconductor memory
JPS58203694A (ja) * 1982-05-21 1983-11-28 Nec Corp メモリ回路
JPS5975495A (ja) * 1982-10-22 1984-04-28 Hitachi Ltd Ｅｐｒｏｍ装置における読出し回路
JPS6043294A (ja) * 1983-08-18 1985-03-07 Toshiba Corp 半導体メモリ装置
EP0323876B1 (en) * 1983-09-21 1992-11-11 THORN EMI North America Inc. Bit line load and column circuitry for a semiconductor memory
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
JP2557337B2 (ja) * 1984-05-30 1996-11-27 三菱電機株式会社 半導体記憶装置
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
US4694429A (en) * 1984-11-29 1987-09-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US4649301A (en) * 1985-01-07 1987-03-10 Thomson Components-Mostek Corp. Multiple-input sense amplifier with two CMOS differential stages driving a high-gain stage
EP0199458B1 (en) * 1985-03-18 1990-09-05 Nec Corporation Memory circuit having an improved writing scheme
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
EP0198429B1 (en) * 1985-04-10 1991-07-24 Nec Corporation Word length selectable memory
JPS6247897A (ja) * 1985-08-28 1987-03-02 Sony Corp 読み出し増幅器
US4685086A (en) * 1985-11-14 1987-08-04 Thomson Components-Mostek Corp. Memory cell leakage detection circuit
US4805148A (en) * 1985-11-22 1989-02-14 Diehl Nagle Sherra E High impendance-coupled CMOS SRAM for improved single event immunity
US4905189B1 (en) * 1985-12-18 1993-06-01 System for reading and writing information
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
US5165039A (en) * 1986-03-28 1992-11-17 Texas Instruments Incorporated Register file for bit slice processor with simultaneous accessing of plural memory array cells
EP0257912A3 (en) * 1986-08-29 1989-08-23 Kabushiki Kaisha Toshiba Static semiconductor memory device
JPS6376192A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
FR2608861A1 (fr) * 1986-12-23 1988-06-24 Labo Electronique Physique Circuit amplificateur de lecture pour une memoire ram statique
KR900006293B1 (ko) * 1987-06-20 1990-08-27 삼성전자 주식회사 씨모오스 디램의 데이터 전송회로
EP0320556B1 (en) * 1987-12-15 1991-02-27 International Business Machines Corporation Improved reference voltage generator for cmos memories
JPH0766945B2 (ja) * 1988-09-06 1995-07-19 株式会社東芝 スタティック型メモリ
JPH0817034B2 (ja) * 1988-10-24 1996-02-21 三菱電機株式会社 半導体記憶装置
KR920010345B1 (ko) * 1990-06-30 1992-11-27 삼성전자 주식회사 선충전수단을 구비한 라이트 드라이버(write driver)
US5325338A (en) * 1991-09-04 1994-06-28 Advanced Micro Devices, Inc. Dual port memory, such as used in color lookup tables for video systems
JPH06162776A (ja) * 1992-11-18 1994-06-10 Nec Corp 半導体メモリ回路
JPH07147086A (ja) * 1993-11-02 1995-06-06 Nec Corp ダイナミック型半導体記憶装置
KR100439039B1 (ko) * 2002-09-09 2004-07-03 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 센스 증폭기
US7027346B2 (en) * 2003-01-06 2006-04-11 Texas Instruments Incorporated Bit line control for low power in standby
EP1607931B1 (en) 2003-03-26 2014-01-08 Semiconductor Energy Laboratory Co., Ltd. Device substrate and light-emitting device
JP4562997B2 (ja) * 2003-03-26 2010-10-13 株式会社半導体エネルギー研究所 素子基板及び発光装置
US7248508B1 (en) * 2006-01-11 2007-07-24 Arm Limited Data retention in a semiconductor memory
JP5178182B2 (ja) * 2007-12-25 2013-04-10 株式会社東芝 半導体記憶装置
GB2515098B (en) * 2013-06-14 2016-02-03 Jaguar Land Rover Ltd Speaker device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352325A (en) * 1976-10-25 1978-05-12 Toshiba Corp Mos random access memory
JPS5472691A (en) * 1977-11-21 1979-06-11 Toshiba Corp Semiconductor device
US4272834A (en) * 1978-10-06 1981-06-09 Hitachi, Ltd. Data line potential setting circuit and MIS memory circuit using the same
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS55129994A (en) * 1979-03-26 1980-10-08 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
IT1149530B (it) 1986-12-03
HK54586A (en) 1986-08-01
DE3203417A1 (de) 1982-08-12
US4507759A (en) 1985-03-26
JPH0241113B2 (it) 1990-09-14
FR2499291A1 (fr) 1982-08-06
JPS57127989A (en) 1982-08-09
MY8600547A (en) 1986-12-31
GB2092403B (en) 1984-08-01
SG20386G (en) 1987-03-27
GB2092403A (en) 1982-08-11
FR2499291B1 (fr) 1986-12-05

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950224