BR8107810A - Memoria somente-leitura e leitura-escrita - Google Patents

Memoria somente-leitura e leitura-escrita

Info

Publication number
BR8107810A
BR8107810A BR8107810A BR8107810A BR8107810A BR 8107810 A BR8107810 A BR 8107810A BR 8107810 A BR8107810 A BR 8107810A BR 8107810 A BR8107810 A BR 8107810A BR 8107810 A BR8107810 A BR 8107810A
Authority
BR
Brazil
Prior art keywords
reading
writing
memory
Prior art date
Application number
BR8107810A
Other languages
English (en)
Inventor
Hsing Ti Tuan
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Publication of BR8107810A publication Critical patent/BR8107810A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
BR8107810A 1981-02-10 1981-11-30 Memoria somente-leitura e leitura-escrita BR8107810A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/233,066 US4380803A (en) 1981-02-10 1981-02-10 Read-only/read-write memory

Publications (1)

Publication Number Publication Date
BR8107810A true BR8107810A (pt) 1983-04-12

Family

ID=22875748

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8107810A BR8107810A (pt) 1981-02-10 1981-11-30 Memoria somente-leitura e leitura-escrita

Country Status (6)

Country Link
US (1) US4380803A (pt)
EP (1) EP0057784B1 (pt)
JP (1) JPS57143789A (pt)
BR (1) BR8107810A (pt)
CA (1) CA1181847A (pt)
DE (1) DE3176752D1 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3202028A1 (de) * 1982-01-22 1983-07-28 Siemens AG, 1000 Berlin und 8000 München Integrieter dynamischer schreib-lese-speicher
JPS60103587A (ja) * 1983-11-09 1985-06-07 Toshiba Corp 半導体記憶装置のメモリセルキヤパシタ電圧印加回路
JPH0766659B2 (ja) * 1986-01-30 1995-07-19 三菱電機株式会社 半導体記憶装置
JPS62202397A (ja) * 1986-02-28 1987-09-07 Fujitsu Ltd 半導体記憶装置
JPH0775248B2 (ja) * 1990-06-07 1995-08-09 株式会社東芝 ダイナミック型半導体メモリ
JPH0685173A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体集積回路用キャパシタ
WO1994022142A1 (en) * 1993-03-17 1994-09-29 Zycad Corporation Random access memory (ram) based configurable arrays
US7337282B2 (en) * 2003-11-28 2008-02-26 Infineon Technologies Ag Memory system and process for controlling a memory component to achieve different kinds of memory characteristics on one and the same memory component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755793A (en) * 1972-04-13 1973-08-28 Ibm Latent image memory with single-device cells of two types
DE2450116C2 (de) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
US3983544A (en) * 1975-08-25 1976-09-28 International Business Machines Corporation Split memory array sharing same sensing and bit decode circuitry
JPS5856264B2 (ja) * 1977-05-31 1983-12-14 株式会社東芝 半導体記憶装置
US4230954A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Permanent or semipermanent charge transfer storage systems

Also Published As

Publication number Publication date
CA1181847A (en) 1985-01-29
EP0057784A3 (en) 1984-09-05
EP0057784A2 (en) 1982-08-18
EP0057784B1 (en) 1988-05-18
US4380803A (en) 1983-04-19
DE3176752D1 (en) 1988-06-23
JPS57143789A (en) 1982-09-06
JPH0419710B2 (pt) 1992-03-31

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