FR2553558B1 - Memoire dynamique - Google Patents

Memoire dynamique

Info

Publication number
FR2553558B1
FR2553558B1 FR8414337A FR8414337A FR2553558B1 FR 2553558 B1 FR2553558 B1 FR 2553558B1 FR 8414337 A FR8414337 A FR 8414337A FR 8414337 A FR8414337 A FR 8414337A FR 2553558 B1 FR2553558 B1 FR 2553558B1
Authority
FR
France
Prior art keywords
dynamic memory
dynamic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8414337A
Other languages
English (en)
Other versions
FR2553558A1 (fr
Inventor
Kazumasa Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2553558A1 publication Critical patent/FR2553558A1/fr
Application granted granted Critical
Publication of FR2553558B1 publication Critical patent/FR2553558B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
FR8414337A 1983-10-17 1984-09-19 Memoire dynamique Expired - Lifetime FR2553558B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58192366A JPS6085492A (ja) 1983-10-17 1983-10-17 ダイナミツクメモリ装置

Publications (2)

Publication Number Publication Date
FR2553558A1 FR2553558A1 (fr) 1985-04-19
FR2553558B1 true FR2553558B1 (fr) 1991-10-04

Family

ID=16290082

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8414337A Expired - Lifetime FR2553558B1 (fr) 1983-10-17 1984-09-19 Memoire dynamique

Country Status (9)

Country Link
US (1) US4651306A (fr)
JP (1) JPS6085492A (fr)
KR (1) KR930000759B1 (fr)
DE (1) DE3438069A1 (fr)
FR (1) FR2553558B1 (fr)
GB (2) GB2149250B (fr)
HK (2) HK40890A (fr)
IT (1) IT1176975B (fr)
SG (1) SG31290G (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110394A (ja) * 1984-10-31 1986-05-28 Mitsubishi Electric Corp 半導体記憶装置
EP0199458B1 (fr) * 1985-03-18 1990-09-05 Nec Corporation Circuit de mémoire ayant un schéma d'écriture
JPS61296598A (ja) * 1985-06-21 1986-12-27 Mitsubishi Electric Corp Ｍｏｓダイナミツクｒａｍのダミ−ワ−ド線駆動回路
JPS6221357A (ja) * 1985-07-22 1987-01-29 Toshiba Corp メモリシステム
JPS62197992A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp ダイナミツクｒａｍ
JPS62200596A (ja) * 1986-02-26 1987-09-04 Mitsubishi Electric Corp 半導体メモリ
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device
JP2953708B2 (ja) * 1989-07-31 1999-09-27 株式会社東芝 ダイナミック型半導体記憶装置
JPH07235612A (ja) * 1994-02-23 1995-09-05 Mitsubishi Electric Corp 半導体装置のメモリセル構造
DE19703611A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Anwendungsspezifisches integriertes Halbleiterprodukt mit Dummy-Elementen
JP2001006373A (ja) * 1999-06-23 2001-01-12 Hitachi Ltd 伝送回路とこれを用いた半導体集積回路及び半導体メモリ
FR2810150B1 (fr) * 2000-06-13 2002-10-04 St Microelectronics Sa Dispositif de memoire vive dynamique et procede de commande d'un acces en lecture d'une telle memoire
US6566191B2 (en) 2000-12-05 2003-05-20 International Business Machines Corporation Forming electronic structures having dual dielectric thicknesses and the structure so formed

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2239737B1 (fr) * 1973-08-02 1980-12-05 Texas Instruments Inc
DE3002017C2 (de) * 1980-01-21 1982-02-04 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter Halbleiterspeicher
JPS601713B2 (ja) * 1980-12-25 1985-01-17 株式会社東芝 ダイナミックメモリ装置
DE3280064D1 (de) * 1981-06-29 1990-01-18 Fujitsu Ltd Dynamische direktzugriffspeicheranordnung.
JPS58111183A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd ダイナミツクｒａｍ集積回路装置
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
US4547868A (en) * 1984-07-26 1985-10-15 Texas Instruments Incorporated Dummy-cell circuitry for dynamic read/write memory

Also Published As

Publication number Publication date
IT8423162A0 (it) 1984-10-16
DE3438069A1 (de) 1985-05-02
GB2149250B (en) 1987-07-15
GB2149250A (en) 1985-06-05
KR930000759B1 (ko) 1993-02-01
KR850003046A (ko) 1985-05-28
GB8616198D0 (en) 1986-08-06
JPS6085492A (ja) 1985-05-14
HK48190A (en) 1990-06-29
GB2175476A (en) 1986-11-26
GB2175476B (en) 1987-07-15
FR2553558A1 (fr) 1985-04-19
HK40890A (en) 1990-06-01
IT1176975B (it) 1987-08-26
US4651306A (en) 1987-03-17
GB8422521D0 (en) 1984-10-10
SG31290G (en) 1990-08-03

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Legal Events

Date Code Title Description
ST Notification of lapse